TPCP8001-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPCP8001-H High Efficiency DCDC Converter Applications Notebook PC Applications Portable Equipment Applications * High speed switching 5 0.475 1 4 B 0.05 M B 0.65 * Small gate charge: QSW = 3.6 nC (typ.) * Low drain-source ON-resistance: RDS (ON) = 13 m (typ.) * High forward transfer admittance: |Yfs| = 16 S (typ.) * Low leakage current: IDSS = 10 A (max) (VDS = 30V) * Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) 2.90.1 A 0.80.05 S 0.025 S 0.28 +0.1 -0.11 0.170.02 +0.13 1.12 -0.12 1.12 +0.13 -0.12 Absolute Maximum Ratings (Ta = 25C) Characteristic 1Source 5Drain 2Source 6Drain 0.28 +0.1 -0.11 Symbol Rating Unit 3Source 7Drain Drain-source voltage VDSS 30 V 4Gate 8Drain Drain-gate voltage (RGS = 20 k) VDGR 30 V JEDEC Gate-source voltage VGSS 20 V JEITA (Note 1) ID 7.2 IDP 28.8 A TOSHIBA Pulsed (Note 1) PD 1.68 W PD 0.84 W EAS 33.6 mJ IAR 7.2 A EAR 0.066 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C DC Drain current Drain power dissipation (t = 5 s) (Note 2a) Drain power dissipation (t = 5 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) 2.80.1 Small footprint due to a small and thin package 0.05 M A 8 2.40.1 * Unit: mm 0.330.05 2-3V1K Weight: 0.017 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 6 5 Marking (Note 5) Note: For Notes 1 to 5, refer to the next page. This transistor is an electrostatic-sensitive device. Handle with care. 8 7 8001H 1 2 3 4 Lot No. 1 2006-05-29 TPCP8001-H Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Max Unit Rth (ch-a) 74.4 C/W Rth (ch-a) 148.8 C/W Note 1: The channel temperature should not exceed 150C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) FR-4 25.4 x 25.4 x 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = 7.2A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-05-29 TPCP8001-H Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = 16 V, VDS = 0 V 10 A Drain cutoff current IDSS VDS = 30 V, VGS = 0 V 10 A V (BR) DSS ID = 10 mA, VGS = 0 V 30 V (BR) DSX ID = 10 mA, VGS = -20 V 15 VDS = 10 V, ID = 1 mA 1.1 2.3 VGS = 4.5 V, ID = 3.6 A 19 25 VGS = 10 V, ID = 3.6 A 13 16 VDS = 10 V, ID = 3.6 A 8 16 640 75 300 4 8 Drain-source breakdown voltage Gate threshold voltage Vth Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss tr VGS Turn-on time ton Fall time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge 1 Qgs1 Gate-drain ("Miller") charge Qgd 4 VDD - 15 V < Duty = 1%, tw = 10 s 18 VDD - 24 V, VGS = 10 V, ID = 7.2 A 11 VDD - 24 V, VGS = 5 V, ID = 7.2 A 6.3 2.2 2.6 Gate switch charge QSW 3.6 VDD - 24 V, VGS = 10 V, ID = 7.2 A V m S pF ns tf Turn-off time 0V 4.7 Switching time ID = 3.6 A VOUT 10 V RL =4.16 Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz V nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP 28.8 A -1.2 V VDSF IDR = 7.2 A, VGS = 0 V 3 2006-05-29 TPCP8001-H ID - VDS 10 3.3 3.2 3.4 10 3.1 4 Common source Ta = 25C Pulse test 3.5 3.4 5 12 3.3 ID 4 ID (A) 3.5 6 ID - VDS 16 Common source Ta = 25C Pulse test (A) 8 Drain current Drain current 3.0 4 2.9 VGS = 2.8 V 2 3.2 8 3.1 3.0 4 2.9 VGS = 2.8 V 0 0 0.4 0.8 1.2 1.6 Drain-source voltage VDS 2 0 2.4 0 (V) 0.8 0.4 (V) (V) Common source Ta = 25C Pulse test 0.8 VDS (A) 12 8 Drain-source voltage ID Drain current 2.4 VDS - VGS 100C 25C Ta = -55C 4 0 0 1 2 3 Gate-source voltage 4 VGS 0.6 ID = 7.2 A 0.4 3.6 0 5 1.8 0.2 0 (V) 2 4 Common source VDS = 10 V Pulse test Ta = -55C 25C 10 100C 1 0.1 0.1 Drain current 10 ID VGS 10 (V) 100 (A) Common source Ta = 25C Pulse test VGS = 4.5 V 10 10 1 1 8 RDS (ON) - ID 100 Drain-source ON-resistance RDS (ON) (m) |Yfs| 100 6 Gate-source voltage Yfs - ID (S) 2 VDS 1 Common source VDS = 10 V Pulse test 16 Forward transfer admittance 1.6 Drain-source voltage ID - VGS 20 1.2 1 Drain current 4 100 10 ID (A) 2006-05-29 TPCP8001-H RDS (ON) - Ta IDR - VDS 100 30 IDR ID = 1.8,3.6,7.2 A 25 VGS = 4.5 V 20 15 ID = 1.8,3.6,7.2 A 10 10 V 5 0 -80 -40 0 40 Ambient temperature 80 120 Ta 10 3 10 4.5 1 VGS = 0 V 1 160 -0.2 0 (C) -0.4 Capacitance - VDS Vth (V) Gate threshold voltage Common source VGS = 0 V f = 1 MHz Ta = 25C Crss VDS 0.5 80 120 Common source VDS = 10 V ID = 1 mA Pulse test 0 -80 100 10 1.0 -40 (V) 0 Ambient temperature (C) 50 (V) 20 Common source ID = 7.2 A Ta = 25C 40 Pulse test 16 VDS (1) Ta 160 Dynamic input/output characteristics (1)Device mounted on a glass-epoxy board (a) (Note 2a) (2)Device mounted on a glass-epoxy board (b) (Note 2b) 5s 1.6 40 (V) 1 1.5 Drain-source voltage 1.2 (2) 0.8 0.4 VDD = 6 V 30 12 VDS 12 V 24 V 20 8 10 4 0 50 100 Ambient temperature 150 Ta 0 200 4 8 Total gate charge (C) 5 12 Qg 16 20 VGS (pF) C Capacitance Coss 100 2 (W) (V) 2.0 PD - Ta PD VDS -1.2 Vth - Ta Ciss Drain-source voltage Drain power dissipation -1.0 2.5 1000 0 0 -0.8 Drain-source voltage 10000 10 0.1 -0.6 Gate-source voltage 35 Common source Ta = 25C Pulse test (A) Common source Pulse test Drain reverse current Drain-source ON-resistance RDS (ON) (m) 40 0 (nC) 2006-05-29 TPCP8001-H rth (C/W) rth - tw 1000 (1)Device mounted on a glass-epoxy board (a) (Note 2a) (2)Device mounted on a glass-epoxy board (b) (Note 2b) (2) (1) Transient thermal impedance 100 10 1 Single - pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe operating area 100 Drain current ID (A) ID max (Pulse) * t =1 ms * 10 10 ms * 1 * Single - pulse Ta = 25C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 Drain-source voltage VDSS max 10 VDS 100 (V) 6 2006-05-29 TPCP8001-H RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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