PUMH4,115 - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 2003 Oct 02 2004 Apr 14

DISCRETE SEMICONDUCTORS

PEMH4; PUMH4

NPN/NPN resistor-equipped

transistors; R1 = 10 kΩ, R2 = open

2004 Apr 14 2

NXP Semiconductors Product data sheet

NPN/NPN resistor-equipped transistors;

R1 = 10 kΩ, R2 = open PEMH4; PUMH4

FEATURES

•Built-in bias resistors

•Simplified circuit design

•Reduction of component count

•Reduced pick and place costs.

APPLICATIONS

•Low current pe rip h er al dr iver

•Replacement of gene ral purpose transistors in digital

applications

•Control of IC inputs.

DESCRIPTION

NPN/NPN resistor -equipped transistors (see “Simplified

outline, symbol and pin nin g” for package details).

QUICK REFERENCE DATA

SYMBOL PARAMETER TYP. MAX. UNIT

VCEO collector-emitter

voltage −50 V

IOoutput current (DC) −100 mA

TR1 NPN − − −

TR2 NPN − − −

R1 bias resistor 10 −kΩ

R2 bias resistor open − −

PRODUCT OVERVIEW

Note

1. * = p: Made in Hong Kong.

* = t: Made in Malaysia.

TYPE NUMBER PACKAGE MARKING CODE(1) NPN/PNP

COMPLEMENT PNP/PNP

COMPLEMENT

PHILIPS EIAJ

PEMH4 SOT666 −H4 PEMD4 PEMB4

PUMH4 SOT363 SC-88 H*4 PUMD4 PUMB4

SIMPLIFIED OUTLINE, SYMBOL AND PINNING

TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PINNING

PIN DESCRIPTION

PEMH4 1 emitter TR1

PUMH4 2base TR1

3collector TR2

4emitter TR2

5base TR2

6collector TR1

handbook, halfpage

MAM453

123

46 5

Top view

654

123

TR1 TR2

2004 Apr 14 3

NXP Semiconductors Pr oduct data shee t

NPN/NPN resistor-equipped transistors;

R1 = 10 kΩ, R2 = open PEMH4; PUMH4

ORDERING INFORMATION

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. Device mounted o n an FR4 printed-circuit board, single-sided copper, stand ard footprint.

2. Reflow soldering is the only recommended soldering method.

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

PEMH4 −Plastic surface mounted packag e; 6 leads SOT666

PUMH4 −Plastic surface mounted packag e; 6 leads SOT363

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor

VCBO collector-base volta ge open emitter −50 V

VCEO collector-emitter voltage open base −50 V

VEBO emitter-base voltage open collector −5 V

IOoutput current (DC) −100 mA

ICM peak collector current −100 mA

Ptot total power dissipation Tamb ≤ 25 °C

SOT363 note 1 −200 mW

SOT666 notes 1 and 2 −200 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

Per device

Ptot total power dissipation Tamb ≤ 25 °C

SOT363 note 1 −300 mW

SOT666 notes 1 and 2 −300 mW

2004 Apr 14 4

NXP Semiconductors Pr oduct data shee t

NPN/NPN resistor-equipped transistors;

R1 = 10 kΩ, R2 = open PEMH4; PUMH4

THERMAL CHARACTE RISTICS

Notes

1. Device mounted o n an FR4 printed-circuit board, single-sided copper, stand ard footprint.

2. Reflow soldering is the only recommended soldering method.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Per transistor

Rth(j-a) thermal resistance from junction to ambient Tamb ≤ 25 °C

SOT363 note 1 625 K/W

SOT666 notes 1 and 2 625 K/W

Per device

Rth(j-a) thermal resistance from junction to ambient Tamb ≤ 25 °C

SOT363 note 1 416 K/W

SOT666 notes 1 and 2 416 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per transistor

ICBO collector-base cut-of f current VCB = 50 V; IE = 0 −−100 nA

ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 −−1μA

VCE = 30 V; IB = 0; Tj = 150 °C−−50 μA

IEBO emitter-base cu t-off current VEB = 5 V; IC = 0 −−100 nA

hFE DC current gain VCE = 5 V; IC = 1 mA 200 − −

VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA −−150 mV

R1 input resistor 710 13 kΩ

Cccollector capacitance VCB = 10 V; IE = ie = 0; f = 1 MHz −−2.5 pF

2004 Apr 14 5

NXP Semiconductors Pr oduct data shee t

NPN/NPN resistor-equipped transistors;

R1 = 10 kΩ, R2 = open PEMH4; PUMH4

PACKAGE OUTLINE

UNIT bpcDE e1HELpw

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-08

06-03-16

IEC JEDEC JEITA

mm 0.27

0.17 0.18

0.08 1.7

1.5 1.3

1.1 0.5

1.0 1.7

1.5 0.1

0.1

DIMENSIONS (mm are the original dimensions)

0.3

0.1

SOT666

pin 1 index

detail X

0 1 2 mm

scale

0.6

0.5

123

456

Plastic surface-mounted package; 6 leads SOT66

wMA

2004 Apr 14 6

NXP Semiconductors Pr oduct data shee t

NPN/NPN resistor-equipped transistors;

R1 = 10 kΩ, R2 = open PEMH4; PUMH4

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT363 SC-88

wBM

pin 1

index A

detail X

vMA

0 1 2 mm

scale

132

456

Plastic surface-mounted package; 6 leads SOT36

UNIT A1

max bpcDEe1HELpQywv

mm 0.1 0.30

0.20 2.2

1.8

0.25

0.10 1.35

1.15 0.65

1.3 2.2

2.0 0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15 0.25

0.15

1.1

0.8

04-11-08

06-03-16

2004 Apr 14 7

NXP Semiconductors Pr oduct data shee t

NPN/NPN resistor-equipped transistors;

R1 = 10 kΩ, R2 = open PEMH4; PUMH4

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s) described in this document may have changed since this docu ment was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

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accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such information.

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reserves the right to make changes to informa tion

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereo f.

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not designed, au thorized or warran ted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reason ably be

expected to result in pe rs onal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratin gs only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict between information

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described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R75/05/pp8 Date of release: 2004 Apr 14 Document orde r number: 9397 750 13086