PRODUCT CATALOG N-CHANNEL ENHANCEMENT MOS FET BMOUCLON 021025. 106. 1177 BLUE HERON BLVD. @ RIVIERA BEACH. FLORIDA 33404 TEL: (407) 848-4311 @ TLX: 51-3435 @FAX: (407) 863-5946 1000V 4 . OA 3 . 5S Q ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS SDF 4N l OO JAA Drain-source Voit.(1) VDSS 1000 Vdc Drain-Gate Voltage SDF 4N100 JAB (Res=1-0Ma) (1) vosr 1000 Vide Gate-Source Voltage FEATURES Continuous aor VGS +20 Vde (els asec) ontinuous ID 4.0 Ade @ RUGGED PACKAGE Drain Current Pulsed(3) 1DM 16 A @ HI-REL CONSTRUCTION Total Power Dissipation PD 100 W @ CERAMIC EYELETS Power Dissipation 0.83 w/Cc @ LEAD BENDING OPTIONS Derating > 25C : @ COPPER CORED 52 ALLOY PINS Operating & Storage Temp. | Tu/Tsig -5S5 TO +150 *C @ LOW IR LOSSES Thermal Resistance Rthuc 1.2 C/W @ LOW THERMAL RESISTANCE Max.Lead temperature Tl 300 C @ OPTIONAL MIL-S-19500 SCREENING - ELECTRICAL CHARACTERISTICS Te =25c (RISE SPEC TE TED SCHEMATIC PARAMETER |[SYMBOL| TEST CONDITIONS |MIN| TYP] MAX JUNITS Sse a VGS= FERRIC CORMECTONS| | Breast Hau [| Ipeaso un tooo] - | - | V H Gate Thresho . TTGatE 111 DRAIN Veltage VGS(TH)|VDS=VGS__1D=250 A |2.0] - [4.5] V + [DRAIN |2|source | [Paitcevrc | icss |[ves=s20 v - | - |1o0[ na S) [3[source [3[ Gate Zero Gate VDS*MAX.RATING VGS=0|[ - [ - [250] HA STANDARD BEND oltage Drain | IDSS |vps=0.8 MAX.RATING CONF IGURAT IONS JAA Current VGS=0 TJ=125C - | [OOo] pA Static Drain- - VGS=10 V Resistance( i} [SCN] 10=2.0 {- Pele F dT - vobS 2 iS Vv Conductance (2)| 9fS | tps=2.0A 3.5] - | - [S(v) eon Input Capacitance] CISS - |1S00] pF S 2 3 Output Capacitance] COSS Yes =OV A OS=2s Vv - |100] - pF Rgpeciiance "| crss | ~ [30] = [rr Turn-On Delay [td(on) VO0=500V Zo*100n - | - | 40] ns Ri TH =2. _|- = ne tr (MOSFET switching times 60 | ns urn-Off Delayjtd(off)lare essentially indepen-| - |170] ns , D U" 2 3 Fall Time tf dent of operating temp. _ _ 60 ns 1 Total Gate Cl 3 Gate-Sour o Plas Qs - - |120] nc 2 . 1 ate-Drain VGS=10V, 1D=4.0A (CUSTOM BEND OPTIONS AVAILABLE) Gate Source Oss |e Ot MAX RATING | - | - Jas | ac STANDARD N ate-Drain ally independent of the OONE LOURAP TONS JAB Cui ier?) Qgd operating temperature) _ - | esi nc e SOURCE-DRAIN DIODE RATINGS & CHARACT.T=2s'c (HME *Soriene ) PARAMETER SYMBOL| TEST CONDITIONS MIN.| TYP .|MAX . UNITS Continuous lp: Source Current} 1s |Modified MOSFET -~ |= |4.0| A : symbol showing the " (Body piede) ory re reverse e urce -N j i i- Current (Body | ISM fier (See schenat tc) -j;,- |16] A Diode) (1) Diode Forward IF=4.0A VGS*0V - Voltage (2) VSD Tce=+25C - 1.81 Vv Tezr+25" C Reverse - Recovery Time trr | 1\F=4.0A - |800 ns (CUSTOM BEND OPTIONS AVAILABLE) di/dt=100A/ wS | 3} TU = 25C to 150C. 3 Pulse test: Pulse Width <300nS, Duty Cycle <2. Repetitive Rating: Puise Width timited By Max.junction Temperature. A46