ATF-551M4-TR1 - Agilent / Hewlett-Packard

Agilent ATF-551M4 Low Noise

Enhancement Mode

Pseudomorphic HEMT in a

Miniature Leadless Package

Data Sheet

Description

Agilent Technologies’ ATF-551M4

is a high dynamic range, super

low noise, single supply

E-pHEMT GAAs FET housed in a

thin miniature leadless package.

The combination of small device

size, super low noise (under 1 dB

Fmin from 2 to 6 GHz), high

linearity and low power makes

the ATF-551M4 ideal for LNA or

hybrid module designs in wire-

less receiver in the 450 MHz to

10 GHz frequency band.

Applications include Cellular/

PCS/ WCDMA handsets and data

modem cards, fixed wireless

infrastructure in the 2.4, 3.5 GHz

and UNII frequency bands, as

well as 2.4 GHz 802.11b, 5 GHz

802.11a and HIPERLAN/2

Wireless LAN PC-cards.

Note:

1. Agilent’s enhancement mode E-pHEMT

devices are the first commercially available

single-supply GaAs transistors that do not

need a negative gate bias voltage for

operation. They can help simplify the design

and reduce the cost of receivers and

transmitters in many applications in the

450 MHz to 10 GHz frequency range.

Features

• Very low noise figure and high

linearity

• Single Supply Enhancement Mode

Technology[1] optimized for 3V

operation

• Excellent uniformity in product

specifications

• 400 micron gate width

• Thin miniature package

1.4 mm x 1.2 mm x 0.7 mm

• Tape-and-reel packaging option

available

Specifications

• 2 GHz; 2.7V, 10 mA (typ.)

• 24.1 dBm output 3rd order intercept

• 14.6 dBm output power at 1 dB gain

compression

• 0.5 dB noise figure

• 17.5 dB associated gain

Applications

• Low Noise Amplifier for:

– Cellular/PCS/WCDMA hand-

sets and modem cards

– 2.4 GHz, 3.5 GHz and UNII fixed

wireless infrastructure

– 2.4 GHz 802.11b Wireless LAN

– 5 GHz 802.11a and HIPERLAN

Wireless LAN

•

General purpose discrete E-pHEMT

for other ultra low noise applications

MiniPak 1.4 mm x 1.2 mm Package

Pin Connections and

Package Marking

Note:

Top View. Package marking provides orientation,

product identification and date code.

“V” = Device Type Code

“x” = Date code character. A different

character is assigned for each month and

year.

Source

Pin 3

Gate

Pin 2

Source

Pin 1

Drain

Pin 4

ATF-551M4 Absolute Maximum Ratings[1]

Absolute

Symbol Parameter Units Maximum

VDS Drain-Source Voltage[2] V5

VGS Gate-Source Voltage[2] V -5 to 1

VGD Gate Drain Voltage[2] V -5 to 1

IDS Drain Current [2] mA 100

IGS Gate Current[5] mA 1

Pdiss Total Power Dissipation [3] mW 270

Pin max. RF Input Power dBm +10

TCH Channel Temperature °C 150

TSTG Storage Temperature °C -65 to 150

θjc Thermal Resistance[4] °C/W 240

Notes:

1. Operation of this device above any one of

these parameters may cause permanent

damage.

2. Assumes DC quiescent conditions.

3. Source lead temperature is 25°C. Derate

6 mW/°C for TL > 40°C.

4. Thermal resistance measured using

150°C Liquid Crystal Measurement method.

5. Device can safely handle +10 dBm RF Input

Power provided I

is limited to 1 mA. I

1dB

drive RF level is bias circuit dependent.

See applications section for additional

information.

Product Consistency Distribution Charts [6]

(V)

Figure 1. Typical I-V Curves.

= 0.1 V per step)

(mA)

0.4V

0.5V

0.6V

0.7V

0.3V

02146537

GAIN (dBm)

Figure 2. Capability Plot for Gain @ 2.7 V,

10 mA. LSL = 15.5, Nominal = 17.5,

USL = 18.5

15 1716 18 19

180

150

120

Cpk = 1.64

Stdev = 0.19

-3 Std +3 Std

OIP3

Figure 3. Capability Plot for OIP3 @ 2.7 V,

10 mA. LSL = 22.0, Nominal = 24.1

22 2423 25 26

150

120

Cpk = 2.85

Stdev = 0.25

-3 Std

Figure 4. Capability Plot for NF @ 2.7 V,

10 mA. Nominal = 0.5, USL = 0.9

0.29 0.690.49 0.89 1.09

160

120

Cpk = 2.46

Stdev = 0.06

+3 Std

Note:

6. Distribution data sample size is 398 samples taken from 4 different wafers. Future wafers allocated to this product may have nominal values anywhere

between the upper and lower limits. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match

and a realizeable match based on production test equipment. Circuit losses have been de-embedded from actual measurements.

ATF-551M4 Electrical Specifications

TA = 25°C, RF parameters measured in a test circuit for a typical device

Symbol Parameter and Test Condition Units Min. Typ. Max.

Vgs Operational Gate Voltage Vds = 2.7V, Ids = 10 mA V 0.3 0.47 0.65

Vth Threshold Voltage Vds = 2.7V, Ids = 2 mA V 0.18 0.37 0.53

Idss Saturated Drain Current Vds = 2.7V, Vgs = 0V µA — 0.1 3

Gm Transconductance Vds = 2.7V, gm = ∆Idss/∆Vgs; mmho 110 220 285

∆Vgs = 0.75 – 0.7 = 0.05V

Igss Gate Leakage Current Vgd = Vgs = -2.7V µA——95

NF Noise Figure [1] f = 2 GHz Vds = 2.7V, Ids = 10 mA dB — 0.5 0.9

Vds = 3V, Ids = 20 mA dB — 0.5 —

Gain Gain [1] f = 2 GHz Vds = 2.7V, Ids = 10 mA dB 15.5 17.5 18.5

Vds = 3V, Ids = 20 mA dB — 18.0 —

OIP3 Output 3rd Order f = 2 GHz Vds = 2.7V, Ids = 10 mA dBm 22 24.1 —

Intercept Point[1] Vds = 3V, Ids = 20 mA dBm — 30.0 —

P1dB 1dB Compressed f = 2 GHz Vds = 2.7V, Ids = 10 mA dBm — 14.6 —

Output Power[1] Vds = 3V, Ids = 20 mA dBm — 16.0 —

Notes:

1. Measurements obtained using production test board described in Figure 5. Typical values were determined from a sample size of 398 parts from

4 wafers.

Input 50Ω Input

Transmission

Line Including

Gate Bias T

(0.3 dB loss)

Input

Matching Circuit

Γ_mag = 0.3

Γ_ang = 11°

(0.3 dB loss)

Output

Matching Circuit

Γ_mag = 0.3

Γ_ang = 9°

(0.9 dB loss)

DUT

50Ω Output

Transmission

Line Including

Gate Bias T

(0.3 dB loss)

Output

Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Gain, P1dB, OIP3, and IIP3 measurements. This circuit represents a

trade-off between an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses have been de-

embedded from actual measurements.

Symbol Parameter and Test Condition Units Min. Typ. Max.

Fmin Minimum Noise Figure [2] f = 900 GHz Vds = 2.7V, Ids = 10 mA dB — 0.27 —

f = 2 GHz Vds = 2.7V, Ids = 10 mA dB — 0.41 —

f = 3.9 GHz Vds = 2.7V, Ids = 10 mA dB — 0.61 —

f = 5.8 GHz Vds = 2.7V, Ids = 10 mA dB — 0.88 —

Ga Associated Gain [2] f = 900 GHz Vds = 2.7V, Ids = 10 mA dB — 21.8 —

f = 2 GHz Vds = 2.7V, Ids = 10 mA dB — 17.9 —

f = 3.9 GHz Vds = 2.7V, Ids = 10 mA dB — 14.2 —

f = 5.8 GHz Vds = 2.7V, Ids = 10 mA dB — 12.0 —

OIP3 Output 3rd Order f = 900 GHz Vds = 2.7V, Ids = 10 mA dBm — 22.1 —

Intercept Point[3] f = 3.9 GHz Vds = 2.7V, Ids = 10 mA dBm — 24.3 —

f = 5.8 GHz Vds = 2.7V, Ids = 10 mA dBm — 24.5 —

P1dB 1dB Compressed f = 900 GHz Vds = 2.7V, Ids = 10 mA dBm — 14.3 —

Output Power[3] f = 3.9 GHz Vds = 2.7V, Ids = 10 mA dBm — 14.5 —

f = 5.8 GHz Vds = 2.7V, Ids = 10 mA dBm — 14.3 —

Notes:

2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

3. Measurements taken above and below 2 GHz was made using a double stub tuner at the input tuned for low noise and a double stub tuner at the

output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.

ATF-551M4 Electrical Specifications (see notes 2 and 3, as indicated)

ATF-551M4 Typical Performance Curves

Notes:

1. Measurements at 900MHz were made using

an ICM fixture with a double stub tuner at the

input tuned for low noise and a double stub

tuner at the output tuned for maximum OIP3.

Circuit losses have been de-embedded from

actual measurements.

2. The Fmin values are based on a set of 16

noise figure measurements made at 16

different impedances using an ATN NP5 test

system. From these measurements Fmin is

calculated. Refer to the noise parameter

measurement section for more information.

Figure 6. Gain vs. Ids and Vds at 900 MHz[1].

Ids (mA)

GAIN (dB)

03515530252010

2.7V

Figure 7. Fmin vs. Ids and Vds at 900 MHz[2].

Ids (mA)

Fmin (dB)

03515530252010

0.50

0.45

0.40

0.35

0.30

0.25

0.20

0.15

0.10

2.7V

Figure 9. IIP3 vs. Ids and Vds at 900 MHz[1].

Ids (mA)

IIP3 (dBm)

03515530252010

-1

-2

2.7V

Figure 10. P1dB vs. Idq and Vds at 900 MHz[1].

Idq (mA)

P1dB (dBm)

03515530252010

2.7V

Figure 8. OIP3 vs. Ids and Vds at 900 MHz[1].

Ids (mA)

OIP3 (dBm)

03515530252010

2.7V

ATF-551M4 Typical Performance Curves, continued

Notes:

1. Measurements at 2 GHz with biasing 2.7V,

10 mA were made on a fixed tuned

production test board that was tuned for

optimal OIP3 match with reasonable noise

figure. This circuit represents a trade-off

between optimal noise match, maximum OIP3

match and a realizable match based on

production test board requirements.

Measurements taken other than 2.7V, 10 mA

biasing was made using a double stub tuner

at the input tuned for low noise and a double

stub tuner at the output tuned for maximum

OIP3. Circuit losses have been de-embedded

from actual measurements.

2. The Fmin values are based on a set of

16 noise figure measurements made at

16 different impedances using an ATN NP5

test system. From these measurements Fmin

is calculated. Refer to the noise parameter

measurement section for more information.

Figure 11. Gain vs. Ids and Vds at 2 GHz[1].

Ids (mA)

GAIN (dB)

03515530252010

2.7V

Figure 12. Fmin vs. Ids and Vds at 2 GHz[2].

Ids (mA)

Fmin (dB)

03515530252010

0.6

0.5

0.4

0.3

0.2

0.1

2.7V

Figure 13. OIP3 vs. Ids and Vds at 2 GHz[1].

Ids (mA)

OIP3 (dBm)

03515530252010

2.7V

Figure 14. IIP3 vs. Ids and Vds at 2 GHz[1].

Ids (mA)

IIP3 (dBm)

03515530252010

2.7V

Figure 15. P1dB vs. Idq and Vds at 2 GHz[1].

Idq (mA)

P1dB (dB)

03515530252010

2.7V

ATF-551M4 Typical Performance Curves, continued

Notes:

1. Measurements at 2 GHz were made on a

fixed tuned production test board that was

tuned for optimal OIP3 match with reasonable

noise figure at 2.7 V, 10 mA bias. This circuit

represents a trade-off between optimal noise

match, maximum OIP3 match and a realizable

match based on production test board

requirements. Measurements taken above

and below 2 GHz was made using a double

stub tuner at the input tuned for low noise

and a double stub tuner at the output tuned

for maximum OIP3. Circuit losses have been

de-embedded from actual measurements.

2. The Fmin values are based on a set of

16 noise figure measurements made at

16 different impedances using an ATN NP5

test system. From these measurements Fmin

is calculated. Refer to the noise parameter

measurement section for more information.

Figure 16. Gain vs. Bias over Frequency[1].

FREQUENCY (GHz)

GAIN (dB)

0631542

2V 10 mA

2.7V 10 mA

Figure 17. Fmin vs. Bias over Frequency[2].

FREQUENCY (GHz)

Fmin (dB)

0631542

1.4

1.2

1.0

0.8

0.6

0.4

0.2

2V 10 mA

2.7V 10 mA

Figure 18. OIP3 vs. Bias over Frequency[1].

FREQUENCY (GHz)

OIP3 (dBm)

0631542

2V 10 mA

2.7V 10 mA

Figure 19. IIP3 vs. Bias over Frequency[1].

FREQUENCY (GHz)

IIP3 (dBm)

0631542

-2

-4

-6

2V 10 mA

2.7V 10 mA

Figure 20. P1dB vs. Bias over Frequency[1].

FREQUENCY (GHz)

P1dB (dBm)

0631542

2V 10 mA

2.7V 10 mA

ATF-551M4 Typical Performance Curves, continued

Notes:

1. Measurements at 2 GHz were made on a

fixed tuned production test board that was

tuned for optimal OIP3 match with reasonable

noise figure at 2.7 V, 10 mA bias. This circuit

represents a trade-off between optimal noise

match, maximum OIP3 match and a realizable

match based on production test board

requirements. Measurements taken above

and below 2 GHz was made using a double

stub tuner at the input tuned for low noise

and a double stub tuner at the output tuned

for maximum OIP3. Circuit losses have been

de-embedded from actual measurements.

2. The Fmin values are based on a set of

16 noise figure measurements made at

16 different impedances using an ATN NP5

test system. From these measurements Fmin

is calculated. Refer to the noise parameter

measurement section for more information.

Figure 21. Gain vs. Temperature and

Frequency with Bias at 2.7V, 10 mA[1].

FREQUENCY (GHz)

GAIN (dB)

0631542

-40°C

25°C

85°C

Figure 22. Fmin vs. Temperature and

Frequency with Bias at 2.7V, 10 mA[2].

FREQUENCY (GHz)

Fmin (dB)

0631542

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

-40°C

25°C

85°C

Figure 23. OIP3 vs. Temperature and

Frequency with Bias at 2.7V, 10 mA[1].

FREQUENCY (GHz)

OIP3 (dBm)

0631542

-40°C

25°C

85°C

Figure 24. IIP3 vs. Temperature and

Frequency with Bias at 2.7V, 10 mA[1].

FREQUENCY (GHz)

IIP3 (dBm)

0631542

-40°C

25°C

85°C

-5

-10

Figure 25. P1dB vs. Temperature and

Frequency with Bias at 2.7V, 10 mA[1].

FREQUENCY (GHz)

P1dB (dBm)

0631542

-40°C

25°C

85°C

ATF-551M4 Typical Scattering Parameters, VDS = 2V, IDS = 10 mA

Freq. S11 S21 S12 S22

MSG/MAG

GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB

0.1 0.995 -6.0 20.41 10.479 175.9 0.007 86.3 0.803 -3.3 31.75

0.5 0.954 -29.1 19.95 9.946 158.2 0.031 71.6 0.758 -15.6 25.06

0.9 0.906 -50.7 19.35 9.280 144.2 0.052 60.8 0.710 -27.4 22.52

1.0 0.896 -55.7 19.18 9.103 141.0 0.056 58.3 0.692 -30.2 22.11

1.5 0.833 -79.5 18.15 8.080 125.6 0.075 46.8 0.611 -42.3 20.32

1.9 0.790 -96.5 17.22 7.260 114.9 0.085 39.0 0.547 -50.4 19.32

2.0 0.781 -100.4 17.00 7.078 112.5 0.087 37.3 0.532 -52.3 19.10

2.5 0.739 -118.5 15.84 6.197 101.1 0.095 29.8 0.463 -60.6 18.14

3.0 0.710 -134.4 14.74 5.459 91.2 0.099 23.7 0.404 -67.6 17.41

4.0 0.683 -160.0 12.75 4.341 74.5 0.104 14.8 0.318 -79.6 16.21

5.0 0.679 -179.8 11.03 3.559 60.3 0.105 8.6 0.263 -91.2 15.30

6.0 0.680 166.5 9.65 3.036 48.5 0.107 5.0 0.220 -99.5 14.53

7.0 0.681 154.0 8.43 2.638 37.2 0.107 2.1 0.199 -111.0 13.92

8.0 0.683 143.7 7.43 2.353 26.4 0.110 -0.3 0.185 -123.4 13.30

9.0 0.690 132.7 6.53 2.122 15.7 0.113 -2.6 0.181 -137.7 11.27

10.0 0.687 119.7 5.72 1.932 4.5 0.117 -5.4 0.185 -151.1 9.97

11.0 0.691 106.5 4.98 1.775 -6.4 0.122 -8.4 0.196 -163.5 9.14

12.0 0.696 92.6 4.28 1.636 -17.7 0.129 -12.3 0.209 -174.4 8.44

13.0 0.713 81.8 3.53 1.501 -28.6 0.135 -16.2 0.206 171.4 7.80

14.0 0.747 67.4 2.82 1.384 -40.4 0.143 -21.8 0.211 151.2 7.62

15.0 0.759 55.5 1.97 1.255 -51.8 0.149 -27.4 0.237 131.8 6.73

16.0 0.808 45.4 1.00 1.122 -62.4 0.153 -33.3 0.269 113.3 6.90

17.0 0.828 37.3 -0.01 0.999 -72.7 0.157 -39.2 0.322 95.4 6.20

18.0 0.870 30.9 -1.04 0.887 -82.6 0.159 -45.2 0.383 80.1 7.47

Freq Fmin Γopt Γopt Rn/50 Ga

GHz dB Mag. Ang. dB

0.5 0.24 0.62 -4.3 0.14 23.50

0.9 0.24 0.56 8.8 0.13 21.66

1.0 0.28 0.52 13.5 0.12 21.61

1.9 0.45 0.47 38.6 0.11 18.04

2.0 0.39 0.47 42.9 0.11 17.88

2.4 0.47 0.42 52.8 0.11 16.76

3.0 0.55 0.35 74.0 0.09 15.66

3.9 0.61 0.32 105.4 0.08 14.10

5.0 0.74 0.33 144.0 0.06 12.74

5.8 0.89 0.36 164.3 0.05 11.83

6.0 0.90 0.37 166.1 0.05 11.63

7.0 1.03 0.38 -170.9 0.06 10.71

8.0 1.13 0.44 -157.2 0.07 9.99

9.0 1.27 0.48 -142.4 0.09 9.36

10.0 1.53 0.46 -126.0 0.17 8.46

Notes:

1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad.

Typical Noise Parameters, VDS = 2V, IDS = 10 mA

-10

Figure 26. MSG/MAG and |S21|2 vs.

Frequency at 2V, 10 mA.

FREQUENCY (GHz)

020

10515

MSG/MAG and |S

(dB)

|S21|2

MAG MSG

MSG

ATF-551M4 Typical Scattering Parameters, VDS = 2V, IDS = 15 mA

Freq. S11 S21 S12 S22

MSG/MAG

GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB

0.1 0.995 -6.6 21.93 12.489 175.5 0.006 86.2 0.765 -3.7 33.18

0.5 0.947 -31.6 21.41 11.757 156.7 0.029 70.9 0.715 -17.0 26.08

0.9 0.892 -54.7 20.67 10.804 142.0 0.048 59.7 0.659 -29.6 23.52

1.0 0.880 -60.1 20.46 10.547 138.6 0.052 57.1 0.641 -32.5 23.07

1.5 0.812 -84.9 19.26 9.186 123.0 0.067 46.0 0.555 -45.0 21.37

1.9 0.768 -102.1 18.23 8.153 112.3 0.076 38.7 0.489 -53.1 20.31

2.0 0.758 -106.1 17.98 7.923 109.9 0.077 37.2 0.474 -55.0 20.12

2.5 0.718 -124.1 16.73 6.859 98.9 0.084 30.5 0.407 -63.2 19.12

3.0 0.692 -139.7 15.55 5.991 89.3 0.088 25.3 0.352 -70.2 18.33

4.0 0.671 -164.5 13.47 4.716 73.3 0.092 18.0 0.272 -82.3 17.10

5.0 0.670 176.6 11.70 3.845 59.7 0.095 13.1 0.222 -94.5 16.07

6.0 0.671 163.5 10.30 3.273 48.3 0.098 10.5 0.181 -103.2 15.24

7.0 0.674 151.5 9.06 2.838 37.4 0.101 8.2 0.164 -115.4 14.49

8.0 0.676 141.6 8.06 2.528 27.0 0.105 6.1 0.152 -128.5 12.66

9.0 0.684 130.9 7.14 2.276 16.5 0.111 3.7 0.150 -143.3 11.51

10.0 0.682 118.0 6.33 2.072 5.6 0.117 0.6 0.156 -156.9 10.35

11.0 0.686 105.1 5.59 1.903 -5.0 0.124 -3.1 0.170 -169.0 9.57

12.0 0.691 91.4 4.88 1.753 -16.1 0.132 -7.6 0.183 -179.3 8.87

13.0 0.708 80.9 4.13 1.609 -26.9 0.140 -12.3 0.181 165.9 8.27

14.0 0.744 66.5 3.42 1.483 -38.5 0.148 -18.6 0.188 145.0 8.14

15.0 0.756 54.9 2.59 1.347 -49.7 0.155 -24.9 0.217 125.0 7.23

16.0 0.805 45.0 1.59 1.201 -60.2 0.158 -31.2 0.253 106.8 7.38

17.0 0.825 37.0 0.61 1.073 -70.4 0.161 -37.5 0.310 89.4 6.61

18.0 0.870 30.7 -0.41 0.954 -80.1 0.163 -43.8 0.373 74.9 7.67

Freq Fmin Γopt Γopt Rn/50 Ga

GHz dB Mag. Ang. dB

0.5 0.21 0.61 -6.1 0.12 24.12

0.9 0.21 0.55 7.0 0.12 22.18

1.0 0.27 0.50 11.4 0.11 22.12

1.9 0.42 0.46 38.1 0.10 18.61

2.0 0.37 0.43 42.7 0.10 18.52

2.4 0.44 0.39 52.9 0.10 17.34

3.0 0.52 0.32 74.4 0.08 16.21

3.9 0.57 0.28 108.3 0.07 14.65

5.0 0.71 0.30 149.5 0.06 13.27

5.8 0.85 0.35 170.0 0.05 12.38

6.0 0.86 0.35 171.7 0.05 12.19

7.0 0.97 0.38 -165.9 0.06 11.24

8.0 1.08 0.43 -152.1 0.07 10.49

9.0 1.22 0.47 -138.1 0.10 9.84

10.0 1.44 0.46 -122.5 0.17 8.96

Notes:

1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad.

Typical Noise Parameters, VDS = 2V, IDS = 15 mA

-10

Figure 27. MSG/MAG and |S21|2 vs.

Frequency at 2V, 15 mA.

FREQUENCY (GHz)

020

10515

MSG/MAG and |S

(dB)

MAG MSG

MSG

ATF-551M4 Typical Scattering Parameters, VDS = 2V, IDS = 20 mA

Freq. S11 S21 S12 S22

MSG/MAG

GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB

0.1 0.994 -6.9 22.85 13.876 175.3 0.006 85.6 0.740 -3.9 33.64

0.5 0.942 -33.3 22.27 12.985 155.7 0.027 70.4 0.687 -17.8 26.82

0.9 0.882 -57.3 21.44 11.806 140.5 0.045 59.0 0.627 -30.9 24.19

1.0 0.869 -62.8 21.21 11.491 137.1 0.048 56.5 0.608 -33.8 23.79

1.5 0.798 -88.1 19.90 9.881 121.3 0.062 45.7 0.520 -46.4 22.02

1.9 0.753 -105.5 18.79 8.704 110.7 0.070 38.9 0.455 -54.4 20.95

2.0 0.744 -109.5 18.53 8.443 108.4 0.071 37.4 0.441 -56.3 20.75

2.5 0.706 -127.4 17.22 7.262 97.5 0.077 31.3 0.376 -64.3 19.75

3.0 0.681 -142.7 16.01 6.314 88.2 0.081 26.7 0.323 -71.0 18.92

4.0 0.663 -167.0 13.88 4.943 72.5 0.085 20.3 0.248 -82.9 17.65

5.0 0.664 174.6 12.09 4.021 59.3 0.089 16.2 0.201 -95.2 16.55

6.0 0.666 161.9 10.68 3.418 48.1 0.093 14.1 0.162 -103.7 15.65

7.0 0.670 150.1 9.43 2.962 37.3 0.097 12.0 0.144 -116.4 14.85

8.0 0.673 140.4 8.42 2.637 27.1 0.103 10.0 0.133 -130.0 12.78

9.0 0.681 129.8 7.51 2.373 16.8 0.109 7.4 0.131 -145.9 11.65

10.0 0.678 117.1 6.68 2.158 6.0 0.117 3.7 0.139 -160.3 10.56

11.0 0.682 104.3 5.94 1.982 -4.6 0.125 -0.2 0.154 -172.7 9.80

12.0 0.688 90.6 5.23 1.826 -15.6 0.133 -5.2 0.168 176.9 9.11

13.0 0.706 80.3 4.48 1.675 -26.3 0.142 -10.3 0.169 161.6 8.56

14.0 0.743 65.9 3.76 1.542 -38.0 0.150 -17.0 0.182 139.6 8.46

15.0 0.753 54.4 2.92 1.400 -48.9 0.157 -23.6 0.212 121.2 7.48

16.0 0.804 44.7 1.93 1.249 -59.3 0.160 -30.1 0.250 103.8 7.76

17.0 0.824 36.7 0.95 1.116 -69.4 0.163 -36.5 0.306 87.0 6.93

18.0 0.869 30.6 -0.05 0.994 -78.9 0.165 -43.0 0.367 73.0 7.80

Freq Fmin Γopt Γopt Rn/50 Ga

GHz dB Mag. Ang. dB

0.5 0.19 0.59 -7.0 0.11 23.50

0.9 0.20 0.54 6.3 0.11 21.66

1.0 0.25 0.48 10.1 0.10 21.61

1.9 0.41 0.43 38.7 0.09 18.04

2.0 0.36 0.41 43.1 0.09 17.88

2.4 0.43 0.37 53.4 0.09 16.76

3.0 0.51 0.29 76.3 0.08 15.66

3.9 0.58 0.26 112.7 0.07 14.10

5.0 0.70 0.29 154.0 0.05 12.74

5.8 0.85 0.34 173.6 0.05 11.83

6.0 0.86 0.35 175.9 0.05 11.63

7.0 0.94 0.37 -162.3 0.06 10.71

8.0 1.07 0.42 -148.2 0.08 9.99

9.0 1.20 0.48 -135.2 0.10 9.36

10.0 1.43 0.46 -119.5 0.17 8.46

Notes:

1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad.

Typical Noise Parameters, VDS = 2V, IDS = 20 mA

-10

Figure 28. MSG/MAG and |S21|2 vs.

Frequency at 2V, 20 mA.

FREQUENCY (GHz)

020

10515

MSG/MAG and |S

(dB)

MAG MSG

MSG

ATF-551M4 Typical Scattering Parameters, VDS = 2.7V, IDS = 10 mA

Freq. S11 S21 S12 S22

MSG/MAG

GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB

0.1 0.995 -5.9 20.55 10.656 175.9 0.006 86.3 0.825 -3.0 32.49

0.5 0.955 -28.7 20.11 10.129 158.4 0.028 72.0 0.782 -14.0 25.58

0.9 0.907 -50.0 19.52 9.466 144.6 0.046 61.3 0.735 -24.5 23.13

1.0 0.896 -55.0 19.36 9.292 141.4 0.050 58.8 0.717 -27.0 22.69

1.5 0.833 -78.6 18.34 8.265 126.1 0.067 47.6 0.639 -37.6 20.91

1.9 0.789 -95.5 17.43 7.439 115.4 0.076 40.0 0.577 -44.6 19.91

2.0 0.779 -99.4 17.21 7.255 113.0 0.078 38.4 0.562 -46.2 19.69

2.5 0.737 -117.4 16.07 6.361 101.7 0.085 31.0 0.495 -53.1 18.74

3.0 0.707 -133.4 14.98 5.610 91.8 0.089 25.1 0.439 -58.8 18.00

4.0 0.679 -159.1 13.01 4.471 75.0 0.093 16.6 0.357 -68.3 16.82

5.0 0.674 -178.9 11.30 3.673 60.8 0.094 10.9 0.303 -77.6 15.92

6.0 0.675 167.3 9.93 3.136 49.1 0.095 8.1 0.264 -83.7 15.19

7.0 0.676 154.9 8.72 2.728 37.7 0.096 5.9 0.244 -93.5 14.54

8.0 0.679 144.5 7.73 2.435 27.0 0.099 4.3 0.230 -104.1 12.94

9.0 0.686 133.5 6.84 2.198 16.2 0.102 2.9 0.222 -116.6 11.58

10.0 0.684 120.8 6.03 2.002 5.1 0.107 0.7 0.222 -129.0 10.44

11.0 0.688 107.5 5.30 1.841 -5.9 0.113 -1.7 0.230 -140.8 9.69

12.0 0.693 93.7 4.59 1.696 -17.2 0.121 -5.2 0.239 -151.9 9.02

13.0 0.710 82.7 3.86 1.559 -28.2 0.129 -8.9 0.232 -164.6 8.47

14.0 0.743 68.6 3.19 1.443 -39.8 0.139 -14.3 0.222 176.6 8.42

15.0 0.760 56.5 2.37 1.314 -51.5 0.147 -20.2 0.232 155.6 7.69

16.0 0.805 46.2 1.42 1.177 -62.2 0.153 -26.2 0.251 134.3 8.26

17.0 0.830 38.1 0.43 1.051 -72.8 0.158 -32.5 0.293 112.0 8.07

18.0 0.872 31.5 -0.58 0.935 -83.1 0.163 -39.1 0.353 92.7 7.59

Freq Fmin Γopt Γopt Rn/50 Ga

GHz dB Mag. Ang. dB

0.5 0.26 0.64 -4.4 0.14 23.79

0.9 0.27 0.57 7.5 0.13 21.80

1.0 0.30 0.54 11.1 0.13 21.60

1.9 0.46 0.49 36.6 0.11 18.06

2.0 0.41 0.48 40.4 0.12 17.92

2.4 0.47 0.44 50.3 0.11 16.79

3.0 0.55 0.36 69.5 0.10 15.70

3.9 0.61 0.32 101.3 0.08 14.24

5.0 0.74 0.32 139.5 0.06 12.86

5.8 0.88 0.35 161.5 0.05 12.01

6.0 0.90 0.35 163.9 0.05 11.82

7.0 1.00 0.37 -173.6 0.06 10.93

8.0 1.12 0.41 -158.2 0.07 10.24

9.0 1.25 0.46 -143.0 0.09 9.66

10.0 1.46 0.46 -127.2 0.15 8.85

Notes:

1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad.

Typical Noise Parameters, VDS = 2.7V, IDS = 10 mA

-10

Figure 29. MSG/MAG and |S21|2 vs.

Frequency at 2.7V, 10 mA.

FREQUENCY (GHz)

020

10515

MSG/MAG and |S21|2 (dB)

MAG MSG

MSG

ATF-551M4 Typical Scattering Parameters, VDS = 2.7V, IDS = 15 mA

Freq. S11 S21 S12 S22

MSG/MAG

GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB

0.1 0.995 -6.5 21.98 12.559 175.6 0.006 86.4 0.793 -3.2 33.21

0.5 0.949 -31.2 21.47 11.839 156.9 0.026 71.0 0.745 -15.2 26.58

0.9 0.894 -54.0 20.75 10.905 142.3 0.043 60.1 0.691 -26.4 24.04

1.0 0.882 -59.4 20.55 10.650 138.9 0.047 57.5 0.673 -28.9 23.55

1.5 0.814 -84.0 19.37 9.298 123.4 0.061 46.6 0.589 -39.7 21.83

1.9 0.768 -101.1 18.34 8.265 112.7 0.068 39.5 0.526 -46.6 20.85

2.0 0.758 -105.1 18.10 8.034 110.3 0.070 38.0 0.511 -48.1 20.60

2.5 0.718 -123.1 16.86 6.966 99.3 0.076 31.4 0.447 -54.6 19.62

3.0 0.691 -138.7 15.70 6.095 89.7 0.079 26.3 0.393 -59.9 18.87

4.0 0.668 -163.5 13.64 4.806 73.6 0.083 19.4 0.318 -68.8 17.63

5.0 0.667 177.5 11.88 3.928 59.9 0.085 15.0 0.268 -77.7 16.65

6.0 0.668 164.3 10.49 3.345 48.5 0.088 13.1 0.230 -83.3 15.80

7.0 0.671 152.2 9.26 2.904 37.5 0.091 11.4 0.212 -93.0 15.04

8.0 0.673 142.3 8.27 2.591 27.0 0.095 10.0 0.198 -103.4 12.89

9.0 0.682 131.6 7.37 2.335 16.4 0.101 8.4 0.190 -116.2 11.88

10.0 0.677 118.5 6.56 2.128 5.4 0.107 5.6 0.190 -129.6 10.70

11.0 0.684 105.8 5.83 1.956 -5.3 0.115 2.6 0.198 -142.6 10.06

12.0 0.690 91.7 5.12 1.804 -16.7 0.124 -1.7 0.210 -154.2 9.46

13.0 0.707 81.2 4.38 1.656 -27.5 0.133 -6.1 0.205 -167.8 8.93

14.0 0.744 66.4 3.68 1.528 -39.4 0.143 -12.3 0.200 172.5 9.10

15.0 0.750 55.1 2.85 1.389 -50.6 0.151 -18.7 0.212 150.9 7.85

16.0 0.806 45.2 1.88 1.242 -61.2 0.156 -25.1 0.236 129.7 9.01

17.0 0.824 37.1 0.92 1.112 -71.5 0.162 -31.6 0.282 107.9 8.37

18.0 0.872 31.0 -0.08 0.991 -81.5 0.166 -38.2 0.337 89.7 7.76

Freq Fmin Γopt Γopt Rn/50 Ga

GHz dB Mag. Ang. dB

0.5 0.18 0.61 -6.0 0.12 24.49

0.9 0.18 0.56 6.8 0.12 22.38

1.0 0.24 0.5 10.7 0.11 22.32

1.9 0.38 0.45 36.9 0.1 18.78

2.0 0.33 0.43 41.9 0.1 18.65

2.4 0.42 0.39 50.9 0.1 17.47

3.0 0.5 0.31 73.0 0.08 16.37

3.9 0.55 0.28 107.0 0.07 14.83

5.0 0.66 0.29 146.6 0.06 13.4

5.8 0.83 0.33 168.7 0.05 12.54

6.0 0.84 0.34 170.7 0.05 12.36

7.0 0.95 0.36 -166.9 0.06 11.44

8.0 1.06 0.41 -152.3 0.07 10.69

9.0 1.18 0.46 -138.1 0.1 10.12

10.0 1.43 0.44 -122.5 0.16 9.21

Notes:

1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad.

Typical Noise Parameters, VDS = 2.7V, IDS = 15 mA

-10

Figure 30. MSG/MAG and |S

vs.

Frequency at 2.7V, 15 mA.

FREQUENCY (GHz)

020

10515

MSG/MAG and |S21|2 (dB)

MAG MSG

MSG

ATF-551M4 Typical Scattering Parameters, VDS = 2.7V, IDS = 20 mA

Freq. S11 S21 S12 S22

MSG/MAG

GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB

0.1 0.995 -6.8 22.92 13.988 175.4 0.005 86.4 0.772 -3.4 34.47

0.5 0.943 -33.0 22.35 13.103 155.9 0.024 70.6 0.72 -15.7 27.37

0.9 0.883 -56.9 21.53 11.932 140.7 0.04 59.4 0.662 -27.1 24.75

1.0 0.87 -62.4 21.30 11.616 137.3 0.043 56.9 0.643 -29.6 24.32

1.5 0.798 -87.6 20.00 10.004 121.6 0.056 46.2 0.557 -40.2 22.52

1.9 0.752 -104.9 18.91 8.822 111.0 0.063 39.6 0.494 -46.7 21.46

2.0 0.743 -108.8 18.65 8.557 108.6 0.064 38.2 0.48 -48.1 21.26

2.5 0.704 -126.7 17.35 7.367 97.8 0.069 32.3 0.417 -54.2 20.28

3.0 0.68 -142.1 16.14 6.411 88.4 0.072 27.8 0.367 -59.0 19.50

4.0 0.66 -166.3 14.02 5.026 72.8 0.076 22.0 0.297 -67.2 18.20

5.0 0.662 175.2 12.25 4.095 59.5 0.079 18.6 0.251 -75.7 17.15

6.0 0.664 162.6 10.84 3.483 48.4 0.083 17.4 0.216 -80.7 16.23

7.0 0.667 150.9 9.61 3.022 37.6 0.087 16.1 0.199 -90.4 14.69

8.0 0.67 141.2 8.61 2.695 27.3 0.093 14.8 0.185 -100.6 13.08

9.0 0.679 130.8 7.71 2.429 16.9 0.099 13.0 0.177 -113.5 12.08

10.0 0.677 118.1 6.90 2.213 6.0 0.107 9.9 0.178 -127.2 11.08

11.0 0.683 105.4 6.17 2.034 -4.6 0.116 6.4 0.186 -140.4 10.44

12.0 0.688 91.4 5.46 1.876 -15.8 0.126 1.8 0.198 -152.2 9.85

13.0 0.705 80.9 4.72 1.722 -26.5 0.136 -3.2 0.193 -165.9 9.37

14.0 0.741 66.5 4.03 1.59 -38.3 0.146 -9.8 0.188 173.7 9.78

15.0 0.75 55.0 3.19 1.444 -49.5 0.154 -16.5 0.2 151.1 8.35

16.0 0.803 45.1 2.22 1.291 -60.1 0.159 -23.2 0.224 129.5 9.10

17.0 0.823 37.2 1.26 1.156 -70.3 0.165 -29.8 0.269 107.3 8.45

18.0 0.872 31.0 0.27 1.032 -80.2 0.168 -36.6 0.325 88.8 7.88

Freq Fmin Γopt Γopt Rn/50 Ga

GHz dB Mag. Ang. dB

0.5 0.18 0.61 -6.7 0.12 24.89

0.9 0.18 0.55 5.9 0.11 22.72

1.0 0.23 0.49 9.9 0.10 22.68

1.9 0.39 0.43 37.8 0.09 19.18

2.0 0.36 0.42 41.6 0.09 18.98

2.4 0.43 0.37 51.7 0.09 17.83

3.0 0.51 0.29 73.6 0.08 16.69

3.9 0.56 0.26 110.7 0.07 15.19

5.0 0.68 0.28 152.8 0.05 13.79

5.8 0.83 0.33 172.9 0.05 12.91

6.0 0.85 0.33 175.6 0.05 12.73

7.0 0.95 0.37 -162.4 0.06 11.80

8.0 1.06 0.41 -148.8 0.08 11.06

9.0 1.19 0.47 -135.5 0.10 10.47

10.0 1.41 0.46 -119.2 0.17 9.59

Notes:

1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad.

Typical Noise Parameters, VDS = 2.7V, IDS = 20 mA

-10

Figure 31. MSG/MAG and |S

vs.

Frequency at 2.7V, 20 mA.

FREQUENCY (GHz)

020

10515

MSG/MAG and |S21|2 (dB)

MAG MSG

MSG

ATF-551M4 Typical Scattering Parameters, VDS = 3V, IDS = 10 mA

Freq. S11 S21 S12 S22

MSG/MAG

GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB

0.1 0.996 -5.9 20.49 10.578 176.0 0.006 86.1 0.835 -2.8 32.46

0.5 0.957 -28.4 20.05 10.059 158.5 0.027 72.0 0.792 -13.4 25.71

0.9 0.909 -49.6 19.48 9.420 144.8 0.045 61.5 0.747 -23.5 23.21

1.0 0.899 -54.6 19.32 9.246 141.6 0.049 59.1 0.730 -25.9 22.76

1.5 0.836 -78.1 18.32 8.241 126.3 0.065 47.9 0.653 -36.1 21.03

1.9 0.792 -94.9 17.41 7.424 115.7 0.074 40.3 0.593 -42.7 20.01

2.0 0.782 -98.8 17.20 7.241 113.2 0.075 38.6 0.578 -44.2 19.85

2.5 0.740 -116.8 16.07 6.360 101.9 0.082 31.3 0.513 -50.7 18.90

3.0 0.709 -132.8 14.99 5.616 91.9 0.086 25.3 0.458 -56.0 18.15

4.0 0.680 -158.5 13.03 4.481 75.1 0.090 16.9 0.378 -64.9 16.97

5.0 0.675 -178.4 11.33 3.684 60.9 0.091 11.3 0.325 -73.5 16.07

6.0 0.675 167.8 9.96 3.146 49.1 0.092 8.7 0.287 -79.1 15.34

7.0 0.676 155.1 8.75 2.738 37.6 0.093 6.6 0.267 -88.4 14.69

8.0 0.678 144.9 7.77 2.447 26.8 0.095 5.4 0.252 -98.6 12.90

9.0 0.686 133.8 6.88 2.209 16.0 0.099 4.1 0.242 -110.5 11.73

10.0 0.682 120.5 6.09 2.015 4.7 0.104 2.1 0.241 -122.9 10.56

11.0 0.688 107.5 5.37 1.855 -6.3 0.110 0.0 0.247 -135.1 9.88

12.0 0.694 93.3 4.67 1.711 -17.8 0.118 -3.4 0.256 -146.5 9.26

13.0 0.711 82.4 3.92 1.571 -28.8 0.127 -6.9 0.250 -159.0 8.76

14.0 0.746 67.5 3.24 1.452 -40.8 0.137 -12.6 0.240 -176.5 8.90

15.0 0.753 55.9 2.41 1.320 -52.4 0.146 -18.5 0.246 163.0 7.74

16.0 0.807 45.8 1.46 1.183 -63.1 0.152 -24.5 0.260 142.0 8.91

17.0 0.826 37.6 0.48 1.057 -73.7 0.159 -30.8 0.297 119.0 8.23

18.0 0.874 31.3 -0.53 0.941 -84.1 0.164 -37.5 0.349 98.9 7.59

Freq Fmin Γopt Γopt Rn/50 Ga

GHz dB Mag. Ang. dB

0.5 0.23 0.65 -4.3 0.14 23.81

0.9 0.24 0.58 7.4 0.13 21.82

1.0 0.26 0.54 10.7 0.13 21.62

1.9 0.43 0.50 36.2 0.11 18.05

2.0 0.38 0.48 40.4 0.12 17.96

2.4 0.43 0.44 49.8 0.11 16.84

3.0 0.51 0.36 69.2 0.10 15.76

3.9 0.59 0.31 99.4 0.08 14.23

5.0 0.70 0.32 139.3 0.06 12.94

5.8 0.85 0.35 160.3 0.05 12.04

6.0 0.86 0.35 162.3 0.05 11.85

7.0 0.98 0.36 -173.7 0.06 10.99

8.0 1.09 0.41 -158.6 0.07 10.29

9.0 1.23 0.45 -143.7 0.09 9.71

10.0 1.45 0.44 -126.8 0.15 8.88

Notes:

1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad.

Typical Noise Parameters, VDS = 3V, IDS = 10 mA

-10

Figure 32. MSG/MAG and |S

vs.

Frequency at 3V, 10 mA.

FREQUENCY (GHz)

020

10515

MSG/MAG and |S

(dB)

MAG MSG

MSG

ATF-551M4 Typical Scattering Parameters, VDS = 3V, IDS = 15 mA

Freq. S11 S21 S12 S22

MSG/MAG

GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB

0.1 0.995 -6.5 22.02 12.623 175.6 0.005 86.0 0.802 -3.1 34.02

0.5 0.949 -31.2 21.51 11.900 156.9 0.025 71.0 0.754 -14.6 26.78

0.9 0.894 -54.1 20.79 10.958 142.3 0.041 60.1 0.700 -25.4 24.27

1.0 0.882 -59.4 20.59 10.701 138.9 0.045 57.6 0.682 -27.8 23.76

1.5 0.813 -84.0 19.41 9.341 123.3 0.059 46.7 0.599 -38.1 22.00

1.9 0.768 -101.2 18.38 8.301 112.7 0.066 39.7 0.537 -44.5 21.00

2.0 0.758 -105.1 18.14 8.068 110.3 0.067 38.1 0.522 -45.9 20.81

2.5 0.717 -123.1 16.90 6.996 99.2 0.073 31.6 0.459 -52.0 19.82

3.0 0.690 -138.7 15.74 6.120 89.7 0.076 26.7 0.407 -56.9 19.06

4.0 0.668 -163.5 13.68 4.829 73.6 0.080 20.0 0.334 -65.0 17.81

5.0 0.666 177.5 11.93 3.947 59.9 0.082 15.8 0.286 -73.3 16.82

6.0 0.668 164.4 10.53 3.363 48.5 0.084 14.2 0.250 -78.4 16.02

7.0 0.670 152.3 9.31 2.921 37.5 0.087 12.9 0.232 -87.6 14.96

8.0 0.672 142.4 8.32 2.607 27.0 0.092 11.8 0.218 -97.7 12.99

9.0 0.681 131.7 7.43 2.351 16.4 0.098 10.4 0.209 -110.0 12.01

10.0 0.678 118.6 6.62 2.142 5.3 0.104 7.8 0.209 -122.9 10.90

11.0 0.684 105.8 5.89 1.970 -5.5 0.113 4.9 0.215 -135.4 10.28

12.0 0.690 91.8 5.19 1.817 -16.8 0.122 0.7 0.226 -147.1 9.70

13.0 0.707 81.3 4.44 1.667 -27.6 0.132 -3.7 0.221 -160.3 9.23

14.0 0.744 66.6 3.75 1.540 -39.5 0.142 -10.0 0.211 -179.5 9.62

15.0 0.751 55.2 2.93 1.401 -50.7 0.151 -16.4 0.218 159.7 8.26

16.0 0.807 45.3 1.97 1.254 -61.4 0.157 -22.8 0.236 137.8 9.02

17.0 0.824 37.3 1.01 1.123 -71.9 0.163 -29.5 0.277 114.5 8.38

18.0 0.874 31.1 0.02 1.002 -82.0 0.167 -36.2 0.330 95.0 7.78

Freq Fmin Γopt Γopt Rn/50 Ga

GHz dB Mag. Ang. dB

0.5 0.18 0.63 -6.3 0.12 24.41

0.9 0.19 0.56 6.8 0.12 22.45

1.0 0.23 0.51 10.0 0.11 22.29

1.9 0.39 0.46 36.5 0.10 18.75

2.0 0.35 0.44 40.8 0.10 18.61

2.4 0.42 0.39 50.1 0.10 17.46

3.0 0.49 0.31 72.5 0.08 16.42

3.9 0.56 0.27 104.4 0.07 14.80

5.0 0.66 0.29 146.9 0.06 13.48

5.8 0.83 0.33 167.4 0.05 12.58

6.0 0.84 0.33 169.0 0.05 12.38

7.0 0.94 0.35 -166.9 0.06 11.49

8.0 1.05 0.40 -152.7 0.07 10.77

9.0 1.19 0.46 -138.6 0.09 10.23

10.0 1.40 0.44 -121.9 0.16 9.32

Notes:

1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad.

Typical Noise Parameters, VDS = 3V, IDS = 15 mA

-10

Figure 33. MSG/MAG and |S

vs.

Frequency at 3V, 15 mA.

FREQUENCY (GHz)

020

10515

MSG/MAG and |S

(dB)

MAG MSG

MSG

ATF-551M4 Typical Scattering Parameters, VDS = 3V, IDS = 20 mA

Freq. S11 S21 S12 S22

MSG/MAG

GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB

0.1 0.995 -6.8 22.91 13.987 175.4 0.005 86.1 0.781 -3.3 34.47

0.5 0.943 -33.0 22.35 13.101 155.8 0.024 70.5 0.730 -15.2 27.37

0.9 0.883 -56.9 21.53 11.932 140.7 0.039 59.5 0.672 -26.1 24.86

1.0 0.870 -62.4 21.30 11.614 137.2 0.042 56.9 0.654 -28.5 24.42

1.5 0.798 -87.6 20.00 10.004 121.5 0.054 46.3 0.569 -38.5 22.68

1.9 0.752 -104.9 18.91 8.820 111.0 0.061 39.7 0.506 -44.6 21.60

2.0 0.743 -108.9 18.64 8.555 108.6 0.062 38.3 0.493 -46.0 21.40

2.5 0.704 -126.7 17.35 7.368 97.7 0.067 32.4 0.431 -51.6 20.41

3.0 0.679 -142.1 16.14 6.412 88.4 0.070 28.1 0.383 -56.0 19.62

4.0 0.660 -166.3 14.03 5.028 72.7 0.074 22.5 0.314 -63.5 18.32

5.0 0.662 175.3 12.25 4.099 59.4 0.076 19.2 0.270 -71.5 17.32

6.0 0.664 162.6 10.85 3.488 48.3 0.080 18.3 0.237 -76.2 16.39

7.0 0.667 150.9 9.62 3.027 37.5 0.084 17.2 0.220 -85.2 14.66

8.0 0.670 141.3 8.63 2.701 27.2 0.090 16.3 0.207 -95.2 13.18

9.0 0.679 130.9 7.73 2.435 16.8 0.096 14.6 0.198 -107.6 12.20

10.0 0.677 118.1 6.92 2.219 5.9 0.104 11.7 0.198 -120.6 11.21

11.0 0.683 105.4 6.19 2.040 -4.8 0.114 8.4 0.205 -133.4 10.64

12.0 0.689 91.4 5.49 1.881 -16.0 0.124 3.8 0.216 -145.2 10.10

13.0 0.705 80.9 4.75 1.727 -26.8 0.134 -1.0 0.210 -158.4 9.62

14.0 0.742 66.4 4.05 1.594 -38.6 0.145 -7.7 0.199 -178.0 10.41

15.0 0.751 55.0 3.23 1.451 -49.8 0.153 -14.4 0.207 160.3 8.80

16.0 0.806 45.1 2.27 1.298 -60.4 0.159 -21.1 0.225 138.1 9.12

17.0 0.826 37.2 1.32 1.164 -70.8 0.165 -27.9 0.265 114.0 8.48

18.0 0.874 31.1 0.33 1.039 -80.8 0.170 -34.9 0.320 94.1 7.86

Freq Fmin Γopt Γopt Rn/50 Ga

GHz dB Mag. Ang. dB

0.5 0.17 0.62 -6.2 0.12 24.92

0.9 0.18 0.55 6.0 0.11 22.79

1.0 0.24 0.50 9.5 0.10 22.59

1.9 0.39 0.43 37.5 0.10 19.22

2.0 0.36 0.41 41.2 0.09 19.00

2.4 0.42 0.37 50.9 0.09 17.83

3.0 0.50 0.29 73.6 0.08 16.72

3.9 0.57 0.25 109.4 0.07 15.18

5.0 0.68 0.28 151.6 0.06 13.80

5.8 0.83 0.32 172.5 0.05 12.93

6.0 0.85 0.33 175.6 0.05 12.77

7.0 0.93 0.36 -162.7 0.06 11.84

8.0 1.05 0.41 -149.1 0.08 11.09

9.0 1.19 0.46 -135.5 0.10 10.53

10.0 1.39 0.45 -119.4 0.17 9.64

Notes:

1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad.

Typical Noise Parameters, VDS = 3V, IDS = 20 mA

-10

Figure 34. MSG/MAG and |S

vs.

Frequency at 3V, 20 mA.

FREQUENCY (GHz)

020

10515

MSG/MAG and |S

(dB)

MAG

MSGMSG

MSG

ATF-551M4 Typical Scattering Parameters, VDS = 3V, IDS = 30 mA

Freq. S11 S21 S12 S22

MSG/MAG

GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB

0.1 0.994 -7.4 23.90 15.662 175.0 0.005 86.1 0.760 -3.4 34.96

0.5 0.936 -35.3 23.25 14.544 154.5 0.022 69.8 0.705 -15.4 28.20

0.9 0.870 -60.4 22.32 13.058 138.7 0.035 58.7 0.644 -26.2 25.72

1.0 0.856 -66.1 22.05 12.665 135.2 0.038 56.2 0.624 -28.5 25.23

1.5 0.781 -92.0 20.61 10.732 119.4 0.048 46.0 0.539 -37.7 23.49

1.9 0.736 -109.4 19.44 9.374 108.9 0.054 40.1 0.480 -43.1 22.40

2.0 0.726 -113.3 19.15 9.072 106.6 0.055 38.8 0.467 -44.2 22.17

2.5 0.690 -131.0 17.79 7.753 96.0 0.059 33.7 0.410 -49.0 21.19

3.0 0.668 -146.1 16.54 6.713 86.9 0.062 30.3 0.367 -52.7 20.35

4.0 0.653 -169.6 14.38 5.234 71.7 0.066 26.1 0.307 -59.2 18.99

5.0 0.656 172.7 12.58 4.258 58.7 0.069 23.8 0.268 -66.7 17.90

6.0 0.659 160.5 11.17 3.618 47.9 0.074 23.6 0.238 -70.9 16.89

7.0 0.663 149.0 9.93 3.138 37.2 0.079 22.9 0.224 -79.8 14.61

8.0 0.666 139.6 8.94 2.798 27.1 0.086 21.9 0.211 -89.5 13.35

9.0 0.676 129.3 8.03 2.522 16.8 0.094 20.1 0.203 -101.5 12.55

10.0 0.674 116.6 7.22 2.296 5.9 0.103 16.9 0.202 -114.5 11.58

11.0 0.680 104.1 6.48 2.109 -4.6 0.113 13.1 0.208 -127.3 11.01

12.0 0.688 90.3 5.77 1.944 -15.8 0.124 8.0 0.219 -139.4 10.62

13.0 0.705 80.1 5.03 1.784 -26.4 0.135 3.0 0.213 -152.3 10.38

14.0 0.743 65.8 4.34 1.648 -38.0 0.147 -4.1 0.200 -170.8 10.50

15.0 0.751 54.5 3.53 1.502 -49.2 0.156 -11.1 0.203 166.8 9.84

16.0 0.806 44.9 2.56 1.343 -59.8 0.162 -18.1 0.218 143.9 9.19

17.0 0.826 37.0 1.64 1.208 -70.1 0.168 -25.2 0.254 118.4 8.57

18.0 0.875 31.0 0.67 1.080 -80.2 0.174 -32.4 0.306 97.4 7.93

Freq Fmin Γopt Γopt Rn/50 Ga

GHz dB Mag. Ang. dB

0.5 0.16 0.60 -6.2 0.11 25.60

0.9 0.18 0.55 6.4 0.11 23.17

1.0 0.24 0.47 10.1 0.10 23.19

1.9 0.39 0.39 39.1 0.09 19.73

2.0 0.36 0.38 42.7 0.09 19.48

2.4 0.45 0.33 54.2 0.09 18.36

3.0 0.52 0.26 79.0 0.08 17.20

3.9 0.59 0.23 119.0 0.06 15.66

5.0 0.71 0.28 162.1 0.05 14.28

5.8 0.86 0.33 -179.3 0.05 13.39

6.0 0.89 0.33 -176.7 0.05 13.20

7.0 0.99 0.37 -156.1 0.07 12.27

8.0 1.12 0.42 -143.5 0.09 11.50

9.0 1.26 0.48 -130.8 0.12 10.96

10.0 1.50 0.46 -115.1 0.20 10.01

Notes:

1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these

measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.

2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of

the gate pad. The output reference plane is at the end of the drain pad.

Typical Noise Parameters, VDS = 3V, IDS = 30 mA

-10

Figure 35. MSG/MAG and |S

vs.

Frequency at 3V, 30 mA.

FREQUENCY (GHz)

020

10515

MSG/MAG and |S

(dB)

MAG MSG

MSG

S and Noise Parameter Measurements

The position of the reference

planes used for the measurement

of both S and Noise Parameter

measurements is shown in Figure

36. The reference plane can be

described as being at the center

of both the gate and drain pads.

S and noise parameters are

measured with a 50 ohm

microstrip test fixture made with

a 0.010" thickness aluminum

substrate. Both source pads are

connected directly to ground via

a 0.010" thickness metal rib

which provides a very low

inductance path to ground for

both source pads. The inductance

associated with the addition of

printed circuit board plated

through holes and source bypass

capacitors must be added to the

computer circuit simulation to

properly model the effect of

grounding the source leads in a

typical amplifier design.

Gate

Pin 2

Source

Pin 3

Drain

Pin 4

Source

Pin 1

Reference

Plane

Microstrip

Transmission Lines

Figure 36. Position of the Reference Planes.

Noise Parameter Applications

Information

The Fmin values are based on a

set of 16 noise figure measure-

ments made at 16 different

impedances using an ATN NP5

test system. From these measure-

ments, a true Fmin is calculated.

Fmin represents the true mini-

mum noise figure of the device

when the device is presented

with an impedance matching

network that transforms the

source impedance, typically 50Ω,

to an impedance represented by

the reflection coefficient Γo. The

designer must design a matching

network that will present Γo to

the device with minimal associ-

ated circuit losses. The noise

figure of the completed amplifier

is equal to the noise figure of the

device plus the losses of the

matching network preceding the

device. The noise figure of the

device is equal to Fmin only

when the device is presented

with Γo. If the reflection coeffi-

cient of the matching network is

other than Γo, then the noise

figure of the device will be

greater than Fmin based on the

following equation.

NF = F

min

+ 4 R

|Γ

– Γ

| 2

Zo (|1 + Γ

|2)(1 - |Γ

|2)

Where Rn/Zo is the normalized

noise resistance, Γo is the opti-

mum reflection coefficient

required to produce Fmin and

is the reflection coefficient of the

source impedance actually

presented to the device.

The losses of the matching

networks are non-zero and they

will also add to the noise figure

of the device creating a higher

amplifier noise figure. The losses

of the matching networks are

related to the Q of the compo-

nents and associated printed

circuit board loss. Γo is typically

fairly low at higher frequencies

and increases as frequency is

lowered. Larger gate width

devices will typically have a

lower Γo as compared to nar-

rower gate width devices. Typi-

cally for FETs , the higher Γo

usually infers that an impedance

much higher than 50Ω is re-

quired for the device to produce

Fmin. At VHF frequencies and

even lower L Band frequencies,

the required impedance can be in

the vicinity of several thousand

ohms. Matching to such a high

impedance requires very hi-Q

components in order to minimize

circuit losses. As an example at

900 MHz, when air wound coils

(Q>100)are used for matching

networks, the loss can still be up

to 0.25 dB which will add di-

rectly to the noise figure of the

device. Using muiltilayer molded

inductors with Qs in the 30 to 50

range results in additional loss

over the air wound coil. Losses as

high as 0.5 dB or greater add to

the typical 0.15 dB Fmin of the

device creating an amplifier

noise figure of nearly 0.65 dB.

SMT Assembly

The package can be soldered

using either lead-bearing or lead-

free alloys (higher peak tempera-

tures). Reliable assembly of

surface mount components is a

complex process that involves

many material, process, and

equipment factors, including:

method of heating (e.g. IR or

vapor phase reflow, wave solder-

ing, etc) circuit board material,

conductor thickness and pattern,

type of solder alloy, and the

thermal conductivity and ther-

mal mass of components. Compo-

nents with a low mass, such as

the Minipak 1412 package, will

reach solder reflow temperatures

faster than those with a greater

mass.

The recommended leaded solder

time-temperature profile is

shown in Figure 37. This profile

is representative of an IR reflow

type of surface mount assembly

process. After ramping up from

room temperature, the circuit

board with components attached

to it (held in place with solder

paste) passes through one or

more preheat zones. The preheat

zones increase the temperature

of the board and components to

prevent thermal shock and begin

evaporating solvents from the

solder paste. The reflow zone

briefly elevates the temperature

sufficiently to produce a reflow

of the solder.

The rates of change of tempera-

ture for the ramp-up and cool-

down zones are chosen to be low

enough to not cause deformation

of board or damage to compo-

nents due to thermal shock. The

maximum temperature in the

reflow zone (Tmax) should not

exceed 235°C for leaded solder.

These parameters are typical for

a surface mount assembly

process for the ATF-551M4. As a

general guideline, the circuit

board and components should

only be exposed to the minimum

temperatures and times the

necessary to achieve a uniform

reflow of solder.

The recommended lead-free

reflow profile is shown in Fig-

ure 38.

Electrostatic Sensitivity

FETs and RFICs are electrostatic

discharge (ESD) sensitive de-

vices. Agilent devices are manu-

factured using a very robust and

reliable PHEMT process, however,

permanent damage may occur to

these devices if they are sub-

jected to high-energy electrostatic

discharges. Electrostatic charges

as high as several thousand volts

(which readily accumulate on the

human body and on test equip-

ment) can discharge without

detection and may result in

failure or degradation in perfor-

mance and reliability.

TIME (seconds)

TMAX

TEMPERATURE (°C)

100

150

200

250

Preheat

Zone Cool Down

Zone

Reflow

Zone

120 180 240 300

Figure 38. Lead-free Solder Reflow Profile.

Figure 37. Leaded Solder Reflow Profile.

Electronic devices may be

subjected to ESD damage in any

of the following areas:

• Storage & handling

• Inspection

• Assembly & testing

• In-circuit use

The ATF-551M4 is an ESD Class 1

device. Therefore, proper ESD

precautions are recommended

when handling, inspecting,

testing, and assembling these

devices to avoid damage.

Any user-accessible points in

wireless equipment (e.g. antenna

or battery terminals) provide an

opportunity for ESD damage.

For circuit applications in which

the ATF-551M4 is used as an

input or output stage with close

coupling to an external antenna,

the device should be protected

from high voltage spikes due to

human contact with the antenna.

A good practice, illustrated in

Figure 39, is to place a shunt

inductor or RF choke at the

antenna connection to protect

the receiver and transmitter

circuits. It is often advantageous

to integrate the RF choke into the

design of the diplexer or T/R

switch control circuitry.

Figure 39. In-circuit ESD Protection.

TIME (seconds)

Peak Temperature

Min. 240°C

Max. 255°C

TEMPERATURE (°C)

150

100

221

200

250

300

350

60 9030 120 150 210180 270 300 330240 360

Preheat 130–170°C

Min. 60s

Max. 150s

Reflow Time

Min. 60s

Max. 90s

ATF-551M4 Applications

Information

Introduction

Agilent Technologies’s

ATF-551M4 is a low noise

enhancement mode PHEMT

designed for use in low cost

commercial applications in the

VHF through 10 GHz frequency

range. As opposed to a typical

depletion mode PHEMT where the

gate must be made negative with

respect to the source for proper

operation, an enhancement mode

PHEMT requires that the gate be

made more positive than the

source for normal operation.

Therefore a negative power

supply voltage is not required for

an enhancement mode device.

Biasing an enhancement mode

PHEMT is much like biasing the

typical bipolar junction transistor.

Instead of a 0.7V base to emitter

voltage, the ATF-551M4 enhance-

ment mode PHEMT requires a

nominal 0.47V potential between

the gate and source for a nominal

drain current of 10 mA.

Matching Networks

The techniques for impedance

matching an enhancement mode

device are very similar to those for

matching a depletion mode device.

The only difference is in the

method of supplying gate bias. S

and Noise Parameters for various

bias conditions are listed in this

data sheet. The circuit shown in

Figure 1 shows a typical LNA

circuit normally used for 900 and

1900 MHz applications. Consult

the Agilent Technologies web site

for application notes covering

specific designs and applications.

High pass impedance matching

networks consisting of L1/C1 and

L4/C4 provide the appropriate

match for noise figure, gain, S11

and S22. The high pass structure

also provides low frequency gain

reduction which can be beneficial

from the standpoint of improving

out-of-band rejection.

Capacitors C2 and C5 provide a

low impedance in-band RF

bypass for the matching net-

works. Resistors R3 and R4

provide a very important low

frequency termination for the

device. The resistive termination

improves low frequency stability.

Capacitors C3 and C6 provide

the RF bypass for resistors R3

and R4. Their value should be

chosen carefully as C3 and C6

also provide a termination for

low frequency mixing products.

These mixing products are as a

result of two or more in-band

signals mixing and producing

third order in-band distortion

products. The low frequency or

difference mixing products are

terminated by C3 and C6. For

best suppression of third order

distortion products based on the

CDMA 1.25 MHz signal spacing,

C3 and C6 should be 0.1 uF in

value. Smaller values of capaci-

tance will not suppress the

generation of the 1.25 MHz

difference signal and as a result

will show up as poorer two tone

IP3 results.

INPUT C1

R1 R2

Vdd

L2 L3

Zo Zo

OUTPUT

Figure 1. Typical ATF-551M4 LNA with Passive

Biasing.

Bias Networks

One of the major advantages of

the enhancement mode technol-

ogy is that it allows the designer

to be able to dc ground the

source leads and then merely

apply a positive voltage on the

gate to set the desired amount of

quiescent drain current Id.

Whereas a depletion mode

PHEMT pulls maximum drain

current when Vgs= 0V, an en-

hancement mode PHEMT pulls

only a small amount of leakage

current when Vgs=0V. Only when

Vgs is increased above Vth, the

device threshold voltage, will

drain current start to flow. At a

Vds of 2.7V and a nominal Vgs of

0.47V, the drain current Id will be

approximately 10 mA. The data

sheet suggests a minimum and

maximum Vgs over which the

desired amount of drain current

will be achieved. It is also impor-

tant to note that if the gate

terminal is left open circuited,

the device will pull some amount

of drain current due to leakage

current creating a voltage differ-

ential between the gate and

source terminals.

Passive Biasing

Passive biasing of the ATF-551M4

is accomplished by the use of a

voltage divider consisting of R1

and R2. The voltage for the

divider is derived from the drain

voltage which provides a form of

voltage feedback through the use

of R3 to help keep drain current

constant. In the case of a typical

depletion mode FET, the voltage

divider which is normally con-

nected to a negative voltage

source is connected to the gate

through resistor R4. Additional

resistance in the form of R5

(approximately 10KΩ) is added

to provide current limiting for

the gate of enhancement mode

devices such as the ATF-551M4.

This is especially important

when the device is driven to

P1dB or Psat.

Resistor R3 is calculated based

on desired Vds, Ids and available

power supply voltage.

R3 = VDD – Vds (1)

Ids + IBB

VDD is the power supply voltage.

Vds is the device drain to source

voltage.

Ids is the desired drain current.

IBB is the current flowing

through the R1/R2 resistor

voltage divider network.

The value of resistors R1 and R2

are calculated with the following

formulas.

R1 = Vgs (2)

IBB

R2 = (Vds – Vgs) R1 (3)

Vgs

Example Circuit

VDD = 3V

Vds = 2.7V

Ids = 10 mA

Vgs = 0.47V

Choose I

to be at least 10X the

maximum expected gate leakage

current. I

was conservatively

chosen to be 0.5 mA for this

example. Using equations (1), (2),

and (3) the resistors are calcu-

lated as follows

R1 = 940Ω

R2 = 4460Ω

R3 = 28.6Ω

Active Biasing

Active biasing provides a means

of keeping the quiescent bias

point constant over temperature

and constant over lot to lot

variations in device dc perfor-

mance. The advantage of the

active biasing of an enhancement

mode PHEMT versus a depletion

mode PHEMT is that a negative

power source is not required. The

techniques of active biasing an

enhancement mode device are

very similar to those used to bias

a bipolar junction transistor.

An active bias scheme is shown

in Figure 2.

INPUT C1

R7 R3

Q2 Vdd

L2 L3

Zo Zo

OUTPUT

Figure 2. Typical ATF-551M4 LNA with Active

Biasing.

R1 and R2 provide a constant

voltage source at the base of a

PNP transistor at Q2. The con-

stant voltage at the base of Q2 is

raised by 0.7 volts at the emitter.

The constant emitter voltage plus

the regulated V

supply are

present across resistor R3.

Constant voltage across R3

provides a constant current

supply for the drain current.

Resistors R1 and R2 are used to

set the desired Vds. The combined

series value of these resistors also

sets the amount of extra current

consumed by the bias network.

The equations that describe the

circuit’s operation are as follows.

VE = Vds + (Ids • R4) (1)

R3 = VDD – VE (2)

Ids

VB = VE – VBE (3)

VB = R1 VDD (4)

R1 + R2

VDD = IBB (R1 + R2) (5)

Rearranging equation (4)

provides the following formula

R2 = R1 (VDD – VB) (4A)

and rearranging equation (5)

provides the follow formula

R1 = VDD (5A)

IBB

(1 + VDD – VB )

Example Circuit

VDD = 3 V

Vds = 2.7 V

Ids = 10 mA

R4 = 10Ω

VBE = 0.7 V

Equation (1) calculates the

required voltage at the emitter o

the PNP transistor based o

desired Vds and Ids throug

resistor R4 to be 2.8V. Equation

(2) calculates the value of resistor

R3 which determines the drain

current Ids. In the example

R3=18.2Ω. Equation (3) calculates

the voltage required at the junc-

tion of resistors R1 and R2. This

voltage plus the step-up of the

base emitter junction determines

the regulated Vds. Equations (4)

and (5) are solved simultaneously

to determine the value of resistors

R1 and R2. In the example

R1=4200Ω and R2 =1800Ω.

R7 is chosen to be 1 kΩ. This

resistor keeps a small amount of

current flowing through Q2 to help

maintain bias stability. R6 is

chosen to be 10 KΩ. This value of

resistance is high enough to limit

Q1 gate current in the presence of

high RF drive levels as experi-

enced when Q1 is driven to the

P1dB gain compression point. C7

provides a low frequency bypass to

keep noise from Q2 effecting the

operation of Q1. C7 is typically

0.1 µF.

Maximum Suggested Gate Current

The maximum suggested gate

current for the ATF-551M4 is

1 mA. Incorporating resistor R5

in the passive bias network or

resistor R6 in the active bias

network safely limits gate current

to 500 µA at P1dB drive levels.

In order to minimize component

count in the passive biased

amplifier circuit, the 3 resistor

bias circuit consisting of R1, R2,

and R5 can be simplified if

desired. R5 can be removed if R1

is replaced with a 5.6KΩ resistor

ATF-551M4 Die Model

GATE

SOURCE

INSIDE Package

Port

Num=1

C=0.28 pF

Port

Num=2

SOURCE

DRAIN

Port

Num=4

Port

Num=3

L=0.147 nH

R=0.001

C=0.046 pF

L=0.234 nH

R=0.001

MSub

TLINP

TL3

Z=Z2 Ohm

L=23.6 mil

K=K

A=0.000

F=1 GHz

TanD=0.001

TLINP

TL9

Z=Z2 Ohm

L=11 mil

K=K

A=0.000

F=1 GHz

TanD=0.001

VAR

VAR1

K=5

Z2=85

Z1=30

Var

Egn TLINP

TL1

Z=Z2/2 Ohm

L=22 mil

K=K

A=0.000

F=1 GHz

TanD=0.001

TLINP

TL2

Z=Z2/2 Ohm

L=20 0 mil

K=K

A=0.000

F=1 GHz

TanD=0.001

TLINP

TL7

Z=Z2/2 Ohm

L=5.2 mil

K=K

A=0.000

F=1 GHz

TanD=0.001

TLINP

TL5

Z=Z2 Ohm

L=27.5 mil

K=K

A=0.000

F=1 GHz

TanD=0.001

L=0.234 nH

R=0.001

L=0.281 nH

R=0.001

GaAsFET

FET1

Mode1=MESFETM1

Mode=Nonlinear

MSUB

MSub2

H=25.0 mil

Er=9.6

Mur=1

Cond=1.0E+50

Hu=3.9e+034 mil

T=0.15 mil

TanD=0

Rough=0 mil

ATF-551M4 Minipak Model

and if R2 is replaced with a 27KΩ

resistor. This combination should

limit gate current to a safe level.

PCB Layout

A suggested PCB pad print for

the miniature, Minipak 1412

package used by the ATF-551M4

is shown in Figure 3.

0.5

0.020

0.4

0.016

0.4

0.016

1.1

0.043

0.3

0.012

0.5

0.020

0.3

0.01

Figure 3. PCB Pad Print for Minipak 1412.

Package (mm [inches ]).

This pad print provides allow-

ance for package placement by

automated assembly equipment

without adding excessive

parasitics that could impair the

high frequency performance of

the ATF-551M4. The layout is

shown with a footprint of the

ATF-551M4 superimposed on the

PCB pads for reference.

For Further Information

The information presented here is

an introduction to the use of the

ATF-551M4 enhancement mode

PHEMT. More detailed application

circuit information is available

from Agilent Technologies. Consult

the web page or your local Agilent

Technologies sales representative.

NFET=yes

PFET=no

Vto=0.3

Beta=0.444

Lambda=72e-3

Alpha=13

Tau=

Tnom=16.85

Idstc=

Ucrit=-0.72

Vgexp=1.91

Gamds=1e-4

Vtotc=

Betatce=

Rgs=0.5 Ohm

Rf=

Gscap=2

Cgs=0.6193 pF

Cgd=0.1435 pF

Gdcap=2

Fc=0.65

Rgd=0.5 Ohm

Rd=2.025 Ohm

Rg=1.7 Ohm

Rs=0.675 Ohm

Ld=

Lg=0.094 nH

Ls=

Cds=0.100 pF

Rc=390 Ohm

Crf=0.1 F

Gsfwd=

Gsrev=

Gdfwd=

Gdrev=

R1=

R2=

Vbi=0.95

Vbr=

Vjr=

Is=

Ir=

Imax=

Xti=

Eg=

Fnc=1 MHz

R=0.08

P=0.2

C=0.1

Taumdl=no

wVgfwd=

wBvgs=

wBvgd=

wBvds=

wldsmax=

wPmax=

AllParams=

Advanced_Curtice2_Model

MESFETM1

MiniPak Package Outline Drawing

Ordering Information

Part Number No. of Devices Container

ATF-551M4-TR1 3000 7” Reel

ATF-551M4-TR2 10,000 13” Reel

ATF-551M4-BLK 100 antistatic bag

1.44 (0.058)

1.40 (0.056)

Top view

Side view

Dimensions are in millimeteres (inches)

Bottom view

1.20 (0.048)

1.16 (0.046)

0.70 (0.028)

0.58 (0.023)

1.12 (0.045)

1.08 (0.043)

0.82 (0.033)

0.78 (0.031)

0.32 (0.013)

0.28 (0.011)

-0.07 (-0.003)

-0.03 (-0.001)

0.00

-0.07 (-0.003)

-0.03 (-0.001)

0.42 (0.017)

0.38 (0.015)

0.92 (0.037)

0.88 (0.035)

1.32 (0.053)

1.28 (0.051)

0.00

Solder Pad Dimensions

For product information and a complete list of Agilent

contacts and distributors, please go to our web site.

www.agilent.com/semiconductors

E-mail: SemiconductorSupport@agilent.com

Data subject to change.

Obsoletes 5988-4455EN

July 31, 2003

5988-9006EN

USER

FEED

DIRECTION

COVER TAPE

CARRIER

TAPE

REEL

END VIEW

8 mm

4 mm

TOP VIEW

Note: Vx represents Package Marking Code.

Device orientation is indicated by package marking.

5° MAX.

(CARRIER TAPE THICKNESS) T

(COVER TAPE THICKNESS)

5° MAX.

DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)

LENGTH

WIDTH

DEPTH

PITCH

BOTTOM HOLE DIAMETER

1.40 ± 0.05

1.53 ± 0.05

0.80 ± 0.05

4.00 ± 0.10

0.80 ± 0.05

0.055 ± 0.002

0.064 ± 0.002

0.031 ± 0.002

0.157 ± 0.004

0.031 ± 0.002

CAVITY

DIAMETER

PITCH

POSITION

1.50 ± 0.10

4.00 ± 0.10

1.75 ± 0.10

0.060 ± 0.004

0.157 ± 0.004

0.069 ± 0.004

PERFORATION

WIDTH

THICKNESS

8.00 + 0.30 - 0.10

0.254 ± 0.02

0.315 + 0.012 - 0.004

0.010 ± 0.0008

CARRIER TAPE

CAVITY TO PERFORATION

(WIDTH DIRECTION)

CAVITY TO PERFORATION

(LENGTH DIRECTION)

3.50 ± 0.05

2.00 ± 0.05

0.138 ± 0.002

0.079 ± 0.002

DISTANCE

WIDTH

TAPE THICKNESS

5.40 ± 0.10

0.062 ± 0.001

0.213 ± 0.004

0.0024 ± 0.00004

COVER TAPE

Device Orientation for Outline 4T, MiniPak 1412

Tape Dimensions