RF & Protection Devices
Data Sheet
Revision 1.1, 2012-09-17
BFP640ESD
Robust Low Noise Silicon Germanium Bipolar RF Transistor
Edition 2012-09-17
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFP640ESD
Data Sheet 3 Revision 1.1, 2012-09-17
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
BFP640ESD, Robust Low Noise Silicon Germanium Bipolar RF Transistor
Revision History: 2012-09-17, Revision 1.1
Page Subjects (major changes since previous revision)
This data sheet replaces the revision from 2010-06-29.
The product itself has not been changed and the device characteristics remain unchanged.
Only the product description and information available in the data sheet have been expanded
and updated.
BFP640ESD
Table of Contents
Data Sheet 4 Revision 1.1, 2012-09-17
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.1 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.2 General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.3 Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.4 Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.5 Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
7 Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table of Contents
BFP640ESD
List of Figures
Data Sheet 5 Revision 1.1, 2012-09-17
Figure 4-1 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5-1 BFP640ESD Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in µA. . . . . . . . . . . . . 17
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 5-4 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 18
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 19
Figure 5-7 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 5-8 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters . . . . . . . . . . . . . . . . . 20
Figure 5-9 Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-10 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-11 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . 22
Figure 5-12 Maximum Power Gain Gmax = f (VCE), IC = 30 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 22
Figure 5-13 Input Matching S11 = f (f), VCE = 3 V, IC = 6 / 30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 5-14 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 6 / 30 mA . . . . . . . . . . . 23
Figure 5-15 Output Matching S22 = f (f), VCE = 3 V, IC = 6 / 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 5-16 Noise Figure NFmin = f (f), VCE = 3 V, IC = 6 / 30 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 5-17 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz. . . . . . . . . . . . . . . . . . . . . 25
Figure 5-18 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 25
Figure 7-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-3 Marking Description (Marking BFP640ESD: T4s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-4 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
List of Figures
BFP640ESD
List of Tables
Data Sheet 6 Revision 1.1, 2012-09-17
Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 4-1 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 5-1 DC Characteristics at TA= 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 5-2 General AC Characteristics at TA= 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 5-3 AC Characteristics, VCE = 3 V, f= 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 5-4 AC Characteristics, VCE = 3 V, f= 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 5-5 AC Characteristics, VCE = 3 V, f= 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 5-6 AC Characteristics, VCE = 3 V, f= 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 5-7 AC Characteristics, VCE = 3 V, f= 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 5-8 AC Characteristics, VCE = 3 V, f= 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 5-9 AC Characteristics, VCE = 3 V, f= 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 5-10 AC Characteristics, VCE = 3 V, f= 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 5-11 AC Characteristics, VCE = 3 V, f= 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
List of Tables
BFP640ESD
Product Brief
Data Sheet 7 Revision 1.1, 2012-09-17
1 Product Brief
The BFP640ESD is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s
reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design
supports voltages up to VCEO = 4.1 V and currents up to IC = 50 mA. The device is especially suited for mobile
applications in which low power consumption is a key requirement. The typical transition frequency is
approximately 45 GHz, hence the device offers high power gain at frequencies up to 10 GHz in amplifier
applications. The transistor is fitted with internal protection circuits, which enhance the robustness against
electrostatic discharge (ESD) and high levels of RF input power. The device is housed in an easy to use plastic
package with visible leads.
BFP640ESD
Features
Data Sheet 8 Revision 1.1, 2012-09-17
2 Features
Applications
As Low Noise Amplifier (LNA) in
• Mobile portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMAX 2.5 / 3.5 / 5 GHz, UWB,
Bluetooth
• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and
C-band LNB
• Multimedia applications such as mobile / portable TV, CATV, FM radio
• 3G/4G UMTS/LTE mobile phone applications
• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, amplifier in VCOs and buffer amplifier
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
• Robust very low noise amplifier based on Infineon´s reliable,
high volume SiGe:C wafer technology
• 2 kV ESD robustness (HBM) due to integrated protection circuits
• High maximum RF input power of 21 dBm
• 0.65 dB minimum noise figure typical at 1.5 GHz,
0.7 dB at 2.4 GHz, 6 mA
• 26.5 dB maximum gain Gms typical at 1.5 GHz,
23 dB Gms at 2.4 GHz, 30 mA
• 27 dBm OIP3 typical at 2.4 GHz, 30 mA
• Easy to use Pb-free (RoHS compliant) and halogen-free standard
package with visible leads
• Qualification report according to AEC-Q101 available
Product Name Package Pin Configuration Marking
BFP640ESD SOT343 1 = B 2 = E 3 = C 4 = E T4s
BFP640ESD
Maximum Ratings
Data Sheet 9 Revision 1.1, 2012-09-17
3 Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified)
Parameter Symbol Values Unit Note / Test Condition
Min. Max.
Collector emitter voltage VCEO Open base
–4.1V
TA = 25 °C
–3.6V
TA = -55 °C
Collector base voltage1)
1) Low VCBO due to integrated protection circuits.
VCBO Open emitter
–4.8V
TA = 25 °C
–4.3V
TA = -55 °C
Collector emitter voltage2)
2) VCES is identical to VCEO due to integrated protection circuits.
VCES E-B short circuited
–4.1V
TA = 25 °C
–3.6V
TA = -55 °C
Base current3)
3) Sustainable reverse bias current is high due to integrated protection circuits.
IB-10 6 mA –
Collector current IC–50mA–
RF input power4)
4) RF input power is high due to integrated protection circuits.
PRFin –21dBm–
ESD stress pulse5)
5) ESD robustness is high due to integrated protection circuits.
VESD -2 2 kV HBM, all pins, acc. to
JESD22-A114
Total power dissipation6)
6) TS is the soldering point temperature. TS measured on the emitter lead at the soldering point of the pcb.
Ptot –200mWTS≤88 °C
Junction temperature TJ–150°C–
Storage temperature TStg -55 150 °C –
BFP640ESD
Thermal Characteristics
Data Sheet 10 Revision 1.1, 2012-09-17
4 Thermal Characteristics
Figure 4-1 Total Power Dissipation Ptot = f (Ts)
Table 4-1 Thermal Resistance
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Junction - soldering point1)
1)For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation).
RthJS –310–K/W–
0 25 50 75 100 125 150
0
50
100
150
200
250
TS [°C]
Ptot [mW]
BFP640ESD
Electrical Characteristics
Data Sheet 11 Revision 1.1, 2012-09-17
5 Electrical Characteristics
5.1 DC Characteristics
5.2 General AC Characteristics
Table 5-1 DC Characteristics at TA=25°C
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Collector emitter breakdown voltage V(BR)CEO 4.1 4.7 – V IC=1mA, IB=0
Open base
Collector emitter leakage current ICES ––500nAVCE =2V, VBE =0
E-B short circuited
Collector base leakage current ICBO ––500nAVCB =2V, IE=0
Open emitter
Emitter base leakage current IEBO ––10μAVEB =0.5V, IC=0
Open collector
DC current gain hFE 110 180 270 VCE =3V, IC=30mA
Pulse measured
Table 5-2 General AC Characteristics at TA=25°C
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Transition frequency fT–45–GHzVCE =3V, IC=30mA,
f=1GHz
Collector base capacitance CCB –0.08–pFVCB =3V, VBE =0 V
f=1MHz
Emitter grounded
Collector emitter capacitance CCE –0.4–pFVCE =3V, VBE =0 V
f=1MHz
Base grounded
Emitter base capacitance CEB –0.7–pFVEB =0.4V, VCB =0 V
f=1MHz
Collector grounded
BFP640ESD
Electrical Characteristics
Data Sheet 12 Revision 1.1, 2012-09-17
5.3 Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C
Figure 5-1 BFP640ESD Testing Circuit
Table 5-3 AC Characteristics, VCE = 3 V, f=150MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
Low noise operation point Gms –34– IC=6mA
High linearity operation point Gms –39.5– IC=30mA
Transducer gain dB ZS= ZL=50Ω
Low noise operation point S21 –25– IC=6mA
High linearity operation point S21 –35– IC=30mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –0.6– IC=6mA
Associated gain Gass –30– IC=6mA
Linearity dBm ZS= ZL=50Ω
1 dB gain compression point OP1dB –11– IC=30mA
3rd order intercept point OIP3–25– IC=30mA
IN
OUT
Bias -T
Bias-T
B
(Pin 1)
EC
E
VC
Top View
VB
BFP640ESD
Electrical Characteristics
Data Sheet 13 Revision 1.1, 2012-09-17
Table 5-4 AC Characteristics, VCE = 3 V, f=450MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
Low noise operation point Gms –29– IC=6mA
High linearity operation point Gms –34.5– IC=30mA
Transducer gain dB ZS= ZL=50Ω
Low noise operation point S21 –24.5– IC=6mA
High linearity operation point S21 –32– IC=30mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –0.6– IC=6mA
Associated gain Gass –28.5– IC=6mA
Linearity dBm ZS= ZL=50Ω
1 dB gain compression point OP1dB –11– IC=30mA
3rd order intercept point OIP3–25– IC=30mA
Table 5-5 AC Characteristics, VCE = 3 V, f=900MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
Low noise operation point Gms –26– IC=6mA
High linearity operation point Gms –30.5– IC=30mA
Transducer gain dB ZS= ZL=50Ω
Low noise operation point S21 –23.5– IC=6mA
High linearity operation point S21 –28– IC=30mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –0.6– IC=6mA
Associated gain Gass –26– IC=6mA
Linearity dBm ZS= ZL=50Ω
1 dB gain compression point OP1dB –11.5– IC=30mA
3rd order intercept point OIP3–26– IC=30mA
BFP640ESD
Electrical Characteristics
Data Sheet 14 Revision 1.1, 2012-09-17
Table 5-6 AC Characteristics, VCE = 3 V, f= 1.5 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
Low noise operation point Gms –23.5– IC=6mA
High linearity operation point Gms –26.5– IC=30mA
Transducer gain dB ZS= ZL=50Ω
Low noise operation point S21 –21– IC=6mA
High linearity operation point S21 –24– IC=30mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –0.65– IC=6mA
Associated gain Gass –23.5– IC=6mA
Linearity dBm ZS= ZL=50Ω
1 dB gain compression point OP1dB –12– IC=30mA
3rd order intercept point OIP3–26.5– IC=30mA
Table 5-7 AC Characteristics, VCE = 3 V, f= 1.9 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
Low noise operation point Gms –22.5– IC=6mA
High linearity operation point Gms –25– IC=30mA
Transducer gain dB ZS= ZL=50Ω
Low noise operation point S21 –19.5– IC=6mA
High linearity operation point S21 –22– IC=30mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –0.65– IC=6mA
Associated gain Gass –22– IC=6mA
Linearity dBm ZS= ZL=50Ω
1 dB gain compression point OP1dB –12– IC=30mA
3rd order intercept point OIP3–27– IC=30mA
BFP640ESD
Electrical Characteristics
Data Sheet 15 Revision 1.1, 2012-09-17
Table 5-8 AC Characteristics, VCE = 3 V, f= 2.4 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
Low noise operation point Gms –21– IC=6mA
High linearity operation point Gms –23– IC=30mA
Transducer gain dB ZS= ZL=50Ω
Low noise operation point S21 –18– IC=6mA
High linearity operation point S21 –20– IC=30mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –0.7– IC=6mA
Associated gain Gass –20– IC=6mA
Linearity dBm ZS= ZL=50Ω
1 dB gain compression point OP1dB –12.5– IC=30mA
3rd order intercept point OIP3–27– IC=30mA
Table 5-9 AC Characteristics, VCE = 3 V, f= 3.5 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
Low noise operation point Gma –19– IC=6mA
High linearity operation point Gms –19– IC=30mA
Transducer gain dB ZS= ZL=50Ω
Low noise operation point S21 –15– IC=6mA
High linearity operation point S21 –17– IC=30mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –0.8– IC=6mA
Associated gain Gass –16– IC=6mA
Linearity dBm ZS= ZL=50Ω
1 dB gain compression point OP1dB –12.5– IC=30mA
3rd order intercept point OIP3–26.5– IC=30mA
BFP640ESD
Electrical Characteristics
Data Sheet 16 Revision 1.1, 2012-09-17
Notes
1. Gms = IS21 / S12I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1.
2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all
measured result.
3. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Table 5-10 AC Characteristics, VCE = 3 V, f= 5.5 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
Low noise operation point Gma –14– IC=6mA
High linearity operation point Gma –14.5– IC=30mA
Transducer gain dB ZS= ZL=50Ω
Low noise operation point S21 –11– IC=6mA
High linearity operation point S21 –12.5– IC=30mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –1.05– IC=6mA
Associated gain Gass –11.5– IC=6mA
Linearity dBm ZS= ZL=50Ω
1 dB gain compression point OP1dB –12.5– IC=30mA
3rd order intercept point OIP3–26– IC=30mA
Table 5-11 AC Characteristics, VCE = 3 V, f=10GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
Low noise operation point Gms –10– IC=6mA
High linearity operation point Gms –10.5– IC=30mA
Transducer gain dB ZS= ZL=50Ω
Low noise operation point S21 –4.5– IC=6mA
High linearity operation point S21 –6– IC=30mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –2– IC=6mA
Associated gain Gass –7– IC=6mA
Linearity dBm ZS= ZL=50Ω
1 dB gain compression point OP1dB –11– IC=30mA
3rd order intercept point OIP3–25.5– IC=30mA
BFP640ESD
Electrical Characteristics
Data Sheet 17 Revision 1.1, 2012-09-17
5.4 Characteristic DC Diagrams
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in µA
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V
0
10
20
30
40
50
60
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
CE
[V]
I
C
[mA]
IB=25µA
IB=75µA
IB=125µA
IB=175µA
IB=225µA
IB=275µA
IB=325µA
0
10
20
30
40
50
60
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
CE
[V]
I
C
[mA]
IB=25µA
IB=75µA
IB=125µA
IB=175µA
IB=225µA
IB=275µA
IB=325µA
100
1000
0.1 1 10 100
I
C
[mA]
h
FE
BFP640ESD
Electrical Characteristics
Data Sheet 18 Revision 1.1, 2012-09-17
Figure 5-4 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V
0.00001
0.0001
0.001
0.01
0.1
1
10
100
0.40.50.60.70.80.9
VBE [V]
IC [mA]
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
0.40.50.60.70.80.9
V
BE
[V]
I
B
[mA]
BFP640ESD
Electrical Characteristics
Data Sheet 19 Revision 1.1, 2012-09-17
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
0.2 0.3 0.4 0.5 0.6
VEB [V]
IB [A]
BFP640ESD
Electrical Characteristics
Data Sheet 20 Revision 1.1, 2012-09-17
5.5 Characteristic AC Diagrams
Figure 5-7 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V
Figure 5-8 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters
0 10 20 30 40 50 60
0
5
10
15
20
25
30
35
40
45
50
IC [mA]
fT [GHz]
4.00V
3.00V
2.50V
2.00V
1.00V
0 10 20 30 40 50
−5
0
5
10
15
20
25
30
IC [mA]
OIP3 [dBm]
2V, 1.5GHz
3V, 1.5GHz
2V, 2.4GHz
3V, 2.4GHz
BFP640ESD
Electrical Characteristics
Data Sheet 21 Revision 1.1, 2012-09-17
Figure 5-9 Collector Base Capacitance CCB = f (VCB), f = 1 MHz
Figure 5-10 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 30 mA
0 0.5 1 1.5 2 2.5 3 3.5 4
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
VCB [V]
Ccb [pF]
0 1 2 3 4 5 6 7 8 9 10
0
5
10
15
20
25
30
35
40
45
50
f [GHz]
G [dB]
Gms
Gma
|S21|2
Gms
BFP640ESD
Electrical Characteristics
Data Sheet 22 Revision 1.1, 2012-09-17
Figure 5-11 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz
Figure 5-12 Maximum Power Gain Gmax = f (VCE), IC = 30 mA, f = Parameter in GHz
0 10 20 30 40 50 60
0
3
6
9
12
15
18
21
24
27
30
33
36
39
42
IC [mA]
G [dB]
10.00GHz
5.50GHz
3.50GHz
2.40GHz
1.90GHz
1.50GHz
0.90GHz
0.45GHz
0.15GHz
0 1 2 3 4 5
0
3
6
9
12
15
18
21
24
27
30
33
36
39
42
VCE [V]
G [dB]
10.00GHz
5.50GHz
3.50GHz
2.40GHz
1.90GHz
1.50GHz
0.90GHz
0.45GHz
0.15GHz
BFP640ESD
Electrical Characteristics
Data Sheet 23 Revision 1.1, 2012-09-17
Figure 5-13 Input Matching S11 = f (f), VCE = 3 V, IC = 6 / 30 mA
Figure 5-14 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 6 / 30 mA
10.1 0.2 0.3 0.40.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
1
1
2
2
3
3
4
4
5
5
6
6 7
7 8
8 9
9 10
10
0.03 to 10 GHz
30 mA
6 mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.45GHz
0.9GHz
1.9GHz
2.4GHz
5.5GHz
10GHz
Ic = 6.0mA
Ic = 30mA
BFP640ESD
Electrical Characteristics
Data Sheet 24 Revision 1.1, 2012-09-17
Figure 5-15 Output Matching S22 = f (f), VCE = 3 V, IC = 6 / 30 mA
Figure 5-16 Noise Figure NFmin = f (f), VCE = 3 V, IC = 6 / 30 mA, ZS = Zopt
10.1 0.2 0.3 0.40.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
1
1
2
2
3
3
4
4
5
5
6
6
7
7
8
8
9
9
10
10
0.03 to 10 GHz
30 mA
6 mA
0 2 4 6 8 10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
NFmin [dB]
f [GHz]
IC = 6.0mA
IC = 30mA
BFP640ESD
Electrical Characteristics
Data Sheet 25 Revision 1.1, 2012-09-17
Figure 5-17 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz
Figure 5-18 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. TA = 25°C.
0 10 20 30 40 50
0
0.5
1
1.5
2
2.5
3
3.5
4
f = 1.9GHz
f = 5.5GHz
f = 2.4GHz
f = 0.9GHz
f = 0.45GHz
f = 10GHz
NFmin [dB]
Ic [mA]
0 10 20 30 40 50
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
f = 1.9GHz
f = 5.5GHz
f = 2.4GHz
f = 0.9GHz
f = 0.45GHz
f = 10GHz
NF50 [dB]
Ic [mA]
BFP640ESD
Simulation Data
Data Sheet 26 Revision 1.1, 2012-09-17
6 Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest
versions before actually starting your design.
You find the BFP640ESD SPICE GP model in the internet in MWO- and ADS-format, which you can import into
these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics
and is ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the
pin configuration of the device.
The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP640ESD
SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE
GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have
been extracted.
BFP640ESD
Package Information SOT343
Data Sheet 27 Revision 1.1, 2012-09-17
7 Package Information SOT343
Figure 7-1 Package Outline
Figure 7-2 Package Footprint
Figure 7-3 Marking Description (Marking BFP640ESD: T4s)
Figure 7-4 Tape Dimensions
SOT343-PO
V08
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15
+0.1
-0.05
0.3
+0.1
2
±0.2
±0.1
0.9
3
2
4
1
A
+0.1
0.6
A
M
0.2
1.3
-0.05
-0.05
0.15
0.1
M
4x
0.1
0.1 MIN.
0.6
SOT343-FP
V08
0.8
1.6
1.15
0.9
XYs
56
Date code (YM)
2005, June
Type code
Manufacturer
Pin 1
SOT323-TP V02
0.2
4
2.15
8
2.3
1.1
Pin 1
