MSCXXXX.PDF 12-28-98
SD1400-02
DESCRIPTION:DESCRIPTION:
The SD1400-02 is a 24V class C silicon NPN planar transistor
designed for base station applications. Internal impedance
matching provides improved power gain over the 806 - 900 MHz
frequency range. Gold metalization and emitter ballasting provide
superior long term reliability.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
VCBO Collector- Base Voltage 55 V
VCEO Collector- Emitter Voltage 28 V
VEBO Emitter - Base Voltage 4.0 V
ICDevice Current 2.0 A
PDISS Power Dissipation 57.5 W
TJJunction temperature 200 °°C
TSTG Storage Temperature -65 to + 150 °°C
Thermal DataThermal Data
RTH(J-C) Thermal Resistance Junction-case 3.0 °°C/W
FeaturesFeatures
• 900 MHz
• 24 VOLTS
• POUT = 14 WATTS
• GP = 9.7 dB MINIMUM
• GOLD METALIZATION
• 20:1 VSWR CAPABILITY @ RATED CONDITIONS
• COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
800/900 MHz APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MSCXXXX.PDF 12-28-98
SD1400-02
ELECTRICAL SPECIFICATIONS (Tcase = 25 ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)C)
STATICSTATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVCES IC = 50mA VBE = 0 V 55 --- --- V
BVEBO IE = 10mA IC = 0 mA 4.0 --- --- V
BVCEO IC = 50 mA IB = 0 mA 28 V
ICBO VCB = 15V IE = 0 mA --- --- 2.5 mA
HFE VCE = 5.0 V IC = 1.0 A 20 --- 100 ---
DYNAMICDYNAMIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
POUT f = 900 MHz PIN = 1.5 W VCE = 24V 14 --- --- W
GPf = 900 MHz PIN = 1.5W VCE = 24V 9.7 --- --- dB
ηηCf = 900 MHz PIN = 1.5W VCE = 24V 50 --- --- %
COB f =1 MHz VCB = 30V --- --- 18 pf
IMPEDANCE DATAIMPEDANCE DATA
FREQ ZIN(Ω)Ω) ZCL(Ω)Ω)
800 MHz 4.1 + j3.8 6.3 + j6.5
850 MHz 3.4 + j4.2 6.5 + j5.5
900 MHz
2.3 + j4.0 4.8 + j5.2
PIN= 1.5W
VCC= 24V
MSCXXXX.PDF 12-28-98
SD1400-02
PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA
