1N4942GP thru 1N4942GP Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Fast Switching Rectifier Reverse Voltage 200 to 1000V Forward Current 1.0A DO-204AL (DO-41) Features * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * High temperature metallurgically bonded construction * For use in high frequency rectifier circuits * Fast switching for high efficiency * Cavity-free glass passivated junction * Capable of meeting environmental standards of MIL-S-19500 * 1.0 Ampere operation at TA=55C with no thermal runaway * High temperature soldering guaranteed: 350C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension * d e t n e t a P 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) Dimensions in inches and (millimeters) (R) Mechanical Data 1.0 (25.4) MIN. Case: JEDEC DO-204AL, molded plastic over glass body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.012 oz., 0.3 g 0.034 (0.86) 0.028 (0.71) DIA. NOTE: Lead diameter is 0.026 (0.66) 0.023 (0.58) for suffix "E" part numbers Dimensions in inches and (millimeters) *Glass-plastic encapsulation technique is covered by Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306 Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified. Parameter Symbol 1N4942GP 1N4944GP 1N4946GP 1N4947GP 1N4948GP Unit * Maximum repetitive peak reverse voltage VRRM 200 400 600 800 1000 V * Maximum RMS voltage VRMS 140 280 420 560 700 V * Maximum DC blocking voltage VDC 200 400 600 800 1000 V * Maximum average forward rectified current 0.375" (9.5mm) lead length at TA=55C IF(AV) 1.0 A * Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 25 A Typical thermal resistance (1) RJA 55 C/W TJ, TSTG -65 to +175 C * Operating junction and storage temperature range Electrical Characteristics Ratings at 25C ambient temperature unless otherwise specified. * Maximum instantaneous forward voltage at 1.0A * Maximum DC reverse current at rated DC blocking voltage TA= 25C TA=150C VF 1.3 V IR 1.0 200 A * Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A trr Typical junction capacitance at 4.0V, 1MHz CJ 150 250 15 500 ns pF Notes: (1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5mm) lead length, P.C.B. mounted *JEDEC registered values Document Number 88511 27-Feb-02 www.vishay.com 1 1N4942GP thru 1N4942GP Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 1 -- Forward Current Derating Curves Fig. 2 -- Maximum Non-Repetitive Peak Forward Surge Current 30 Resistive or Inductive Load 0.75 0.5 0.25 0.375" (9.5mm) Lead Length Peak Forward Surge Current (A) Average Forward Rectified Current (A) 1.0 0 TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method) 25 20 15 10 5 50 25 75 100 150 125 1 175 Ambient Temperature (C) Number of Cycles at 60 HZ Fig. 3 -- Typical Instantaneous Forward Characteristics Fig. 4 -- Typical Reverse Characteristics 20 Instantaneous Reverse Current (A) Instantaneous Forward Current (A) 10 TJ = 25C Pulse Width = 300s 1% Duty Cycle 1 0.1 0.01 0.4 10 TJ = 125C 1 TJ = 75C 0.1 TJ = 25C 0.01 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 80 60 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 -- Typical Junction Capacitance Fig. 6 -- Typical Transient Thermal Impedance 100 100 TJ = 25C f = 1.0MHZ Vsig = 50mVp-p 10 1 1 10 Reverse Voltage (V) www.vishay.com 2 100 Typical Thermal Impedance (CW) 30 Junction Capacitance (pF) 100 10 10 1 0.1 0.01 0.1 10 1 100 t, Pulse Duration (sec.) Document Number 88511 27-Feb-02