TYPE TIP2955 P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTOR FOR POWER AMPLIFIER AND HIGH-SPEED SWITCHING APPLICATIONS RECOMMENDED FOR COMPLEMENTARY USE WITH TIP3055 mechanical data 90 Watts at 25C Case Temperature 15 A Rated Collector Current 62.5 mJ Reverse Energy Rating MECHANICAL INTERCHANGEANILITY OF TiF2BGA PLASTIC PACKAGE WWTH 10-2 OUTLINE ou ony 10-1 DUMENSION THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE MOUNTING TAB ek ORTON OF LE [esse A ante OF Last Pan mate coukerone @ aa iso Om te | watten ae | eS ne ca Sh pace ie Het = sas i red CASE TEMmERATURE ove wiz Aces) Staeonewtnt rowr ics wat iL af ot 28 om == ci 2% mo 026 Taos 8208 F085 2 UEAD8 ALL DIMENSIONS ARE IN INCHES absolute maximum ratings at 25C case temperature (unless otherwise noted) Collector-Base Voltage Collector-Emitter Voitage (See Note 1) Emitter-Base Voltage Continuous Collector Current Continuous Base Current Safe Operating Region at (or below] 25 c Case Temperature Continuous Device Dissipation at (or below) 25C Case Temperature (See Note 2) Continuous Device Dissipation at (or below) 25 c Free- Air Temperature (See Note 3) Unclamped Inductive Load Energy (See Note 4) Operating Collector Junction Temperature Range Storage Temperature Range Lead Temperature 1/8 Inch from Case For 10 Seconds NOTES: + This value applies when the base-ernitter resistance Age = 100 %. . Derate linearly to 150C case temperature at the rate of 0.72 WC. 1 2 3. Derate linearly to 150C free-air temperature at the rate of 28 mW/C. 4, 100 V .-70V 1 c7NV --1BA .. 7A " see Figure 5 90 W . 35W .. . 625 mJ 65C to 180C 65C to 150C 260C . This rating is based on the capability of the transistor to operate safely in the circuit of Figure 2, L = 20 mH, Rag? = 100 8, Veg2 OV, Rg = 0.1 2,Vc = 10 V. Energy * Ie2L/2, TEXAS INSTRUMENTS 2-275TYPE TIP2955 P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTOR electrical characteristics at 25C case temperature PARAMETER TEST CONDITIONS MIN MAX|UNIT ViBR)CEO Collector-Emitter Breakdown Voltage Ic=-30mA, !p=0, See Note S 60 Vv lcER Collector Cutoff Current Vce=-70V, Ree = 1002 1| mA IcEO Collector Cutoff Current VcE=-30V, ig=0 0.7) mA Icev Collector Cutoff Current Vce = 100V, Veg =1.5V 5] mA leso Emitter Cutoff Current Vep=-7V, Ic=0 5] mA . . Vce=-4V, Ic=-4A, See Notes 5 and6| 20 70 hee Static Forward Current Transfer Ratio Voce =4V, Ic =10A, See Notes 5 and 6 5 VBE Base-Emitter Voltage Voe=-4V, Io =-4A, See Notes 5 and 6 -1.8] Vv VcE(sat) Collector-Emitter Saturation Voltage 1p = 400 mA, Ie = WA. See Notes and 6 1 Vv 'gp=-3.3A, lo =-10A, See Notes 5 and 6 -3 Small-Signal Common-Emitter Ne Voce =-4V, Ic=-1A, f= 1 kHz 15 Forward Current Transfer Ratio Smatl-Signal Common-E mitter Forward Current fnfe . VceE=-4V, Ic=-1A, See Note 7 10 kHz Transfer Ratio Cutoff Frequency NOTES: 5. These parameters must be measured using pulse techniques. ty = 300 us, duty cycle < 2%. 6. Thase parameters are measured with voltage-sensing contacts separate from the current-carrying contacts and located within 0.125 inch from the device body. 7. fhe is the frequency at which the magnitude of the small-signal forward current transfer ratio is 0.707 of its low-frequency value. For this device, the reference measurement is made at 1 kHz. thermal characteristics PARAMETER MAX [UNIT Rec Junction-to-Case Thermal Resistance 1,39 CONN Raa Junction-to-Free-Air Thermal Resistance 35.7 switching characteristics at 25C case temperature PARAMETER TEST CONDITIONST TYP UNIT ton Turn-On Time I=6A, Ig(1) = O.6A, Ip(2) = 0.6 A, 0.4 us toff Turn-Off Time VBE(off) =4V. RL =5Q, See Figure 1 0.7 T Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2-276 TEXAS INSTRUMENTSTYPE TiP2955 P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION INPUT MONITOR Wiz OUTPUT 1NS14 MONITOR fgg = 107 TUT GDL Vow CN sen ~ Th IN914 1NG14 INDIS . SL at Rgg27 102 ALS a 270 pF son Lt ae Si Voen Vea2"4V 4 Vee1*16V < ADJUST FOR Van=- tavar Le iNPUT MONITOR TEST CIRCUIT av 10% Ove enn Ho yo nr Te Von -14V =} 80% t VOLTAGE WAVEFORMS NOTES: A. Vgqn is # 30-V pulse (from 0 V) into a 50-92 termination. 8. The Voen waveform is supplied by a generator with the following characteristics: tp < 15 ns, te < 15 ns, Zoue = 50 2, ty, = 20 ys, duty cycle 2%. C. Waveforms are monitorad on an oscilloscope with tha following characteristics: ty < 15 ns, Ajp * 10 MQ, Cin < 11.5 pF. DB. Resistors must be noninductive types. . E, The d-c power supplies may require additional bypassing In order to minimize ringing. FIGURE 1 INDUCTIVE LOAD SWITCHING Vce MONITOR SOE em (Sea Note A) ve- INPUT | VOLTAGE ot 1 i be- 100 ms | 1 Rept 20 mH toy io 2NGI28 w4 i 1 200 ' \ t ' INPUT 1 som Rpg2 = 10051 Voc * 10V = \ 1 son cc 7, ' if t MONITOR Vee teat) _! Jt a ee ee Lyin i | Vea2" 0 10 - = { Veas= WV = Aer orn COLLECTOR i >, VOLTAGE I 1 Viaaicea A Oo 7 TEST CIRCUIT VOLTAGE AND CURRENT WAVEFORMS NOTE A: Input pulse width is increased until Ion = 2.5 A. FIGURE 2 TEXAS INSTRUMENTS 2-277TYPE TIP2955 P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTOR TYPICAL CHARACTERISTICS THERMAL INFORMATION STATIC FORWARD CURRENT TRANSFER RATIO COLLECTOR CURRENT DISSIPATION DERATING CURVE 1000 700 Fce = -4V To = 28C 400 | See Notes 5 and 6 200 100 70 40 20 hfe Static Forward Current Transfer Ratio PyMaximum Continuous Device DissipationW 1 0.01 0,04 0,1 -04 ~1 -4 -10 o 25 50 75 100 125 150 ICollector CurrentA TcCase TemperatureC FIGURE 3 NOTES: 5. These parameters must be measured using pulse techniques. ty * 300 us, duty cycle < 2%, 6. These parameters sre measured with voitege- sensing contacts separate from the current carrying contacts and located within 0.125 Inch from the device body. FIGURE 4 MAXIMUM SAFE OPERATING REGION 100 -70 -40 See Note 8 -20 tw = 300 us, d= 0,1 = 10% 2 jtw ims, d= 0.1 = 10% tw = 10 ms, d = 0.1 = 10% -1|D-C Operation -0.7 tCollector CurrentA ( S 0.45 To 26C 0.2 0,1 ~-1 2 4 -10 ~-20 -40 100 VceCollector-E mitter VoltageV FIGURE & NOTE 8: This combination of maximum voltage and current may be achieved only when switching from saturation to cutoff with a clamped inductive load. Ti cannot assume any responsibility for ony circyits shown 2-278 TEXAS INSTRUMENTS or tepresent thet they ave tree trom potent infringement TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.