LM5022MMX/NOPB - Texas Instruments

VIN

FBCOMP

VCC

OUT

UVLO GND

LM5022

L1 D1

C2R1

CSS

CIN

RUV1

RUV2

RFB1

RFB2

RSNS

VIN VO

CCS

RS1

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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

LM5022

SNVS480I –JANUARY 2007–REVISED DECEMBER 2017

LM5022 60-V Low-Side Controller for Boost and SEPIC

1 Features

1• Internal 60-V Start-Up Regulator

• 1-A Peak MOSFET Gate Driver

• VIN Range: 6 V to 60 V (Operates Down to 3 V

After Start-Up)

• Duty Cycle Limit of 90%

• Programmable UVLO With Hysteresis

• Cycle-by-Cycle Current Limit

• External Synchronizable (AC-Coupled)

• Single Resistor Oscillator Frequency Set

• Slope Compensation

• Adjustable Soft Start

• 10-Pin VSSOP Package

2 Applications

• Boost Converters

• SEPIC Converters

3 Description

The LM5022 device is a high-voltage, low-side, N-

channel MOSFET controller ideal for use in boost and

SEPIC regulators. It contains all of the features

required to implement single-ended primary

topologies. Output voltage regulation is based on

current-mode control, which eases the design of loop

compensation while providing inherent input voltage

feedforward. The LM5022 includes a start-up

regulator that operates over a wide input range of 6 V

to 60 V. The PWM controller is designed for high-

speed capability including an oscillator frequency

range up to 2.2 MHz and total propagation delays

less than 100 ns. Additional features include an error

amplifier, precision reference, line undervoltage

lockout, cycle-by-cycle current limit, slope

compensation, soft start, external synchronization

capability, and thermal shutdown. The LM5022 is

available in the 10-pin VSSOP package.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)

LM5022 VSSOP (10) 3.00 mm × 3.00 mm

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

Typical Application

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Table of Contents

1 Features.................................................................. 1

2 Applications ........................................................... 1

3 Description............................................................. 1

4 Revision History..................................................... 2

5 Pin Configuration and Functions......................... 3

6 Specifications......................................................... 4

6.1 Absolute Maximum Ratings ...................................... 4

6.2 ESD Ratings ............................................................ 4

6.3 Recommended Operating Conditions....................... 4

6.4 Thermal Information.................................................. 4

6.5 Electrical Characteristics........................................... 5

6.6 Typical Characteristics.............................................. 7

7 Detailed Description.............................................. 9

7.1 Overview................................................................... 9

7.2 Functional Block Diagram......................................... 9

7.3 Feature Description................................................. 10

7.4 Device Functional Modes........................................ 12

8 Application and Implementation ........................ 14

8.1 Application Information............................................ 14

8.2 Typical Application.................................................. 14

9 Power Supply Recommendations...................... 28

10 Layout................................................................... 29

10.1 Layout Guidelines ................................................. 29

10.2 Layout Examples................................................... 30

11 Device and Documentation Support................. 32

11.1 Device Support...................................................... 32

11.2 Documentation Support ........................................ 32

11.3 Receiving Notification of Documentation Updates 32

11.4 Community Resources.......................................... 32

11.5 Trademarks........................................................... 32

11.6 Electrostatic Discharge Caution............................ 32

11.7 Glossary................................................................ 32

12 Mechanical, Packaging, and Orderable

Information........................................................... 32

4 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision H (December 2016) to Revision I Page

• Changed 1 To: C2 in Equation 55........................................................................................................................................ 24

Changes from Revision G (December 2013) to Revision H Page

• Added ESD Ratings table, Feature Description section, Device Functional Modes,Application and Implementation

section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and

Mechanical, Packaging, and Orderable Information section.................................................................................................. 1

• Deleted soldering temperature (215°C Vapor phase maximum and 220°C Infrared maximum)........................................... 4

• Changed Junction to Ambient Thermal Resistance, RθJA, value From: 200 To: 161.5.......................................................... 4

• Changed slope compensation amplitude, VSLOPE, values From: 80 To: 83 (Minimum), From: 105 To: 110 (Typical),

and From: 130 To: 137 (Maximum)........................................................................................................................................ 5

Changes from Revision F (March 2013) to Revision G Page

• Changed timing resistor equation. Incorrect change when converting to TI format............................................................. 12

Changes from Revision E (March 2013) to Revision F Page

• Changed layout of National Semiconductor Data Sheet to TI format .................................................................................... 1

1VIN 10 SS

2FB 9 RT/SYNC

3COMP 8 CS

4VCC 7 UVLO

5OUT 6 GND

Not to scale

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5 Pin Configuration and Functions

DGS Package

10-Pin VSSOP

Top View

Pin Functions

PIN I/O DESCRIPTION

NO. NAME

1 VIN I Source input voltage: Input to the startup regulator. Operates from 6 V to 60 V.

2 FB I Feedback pin: Inverting input to the internal voltage error amplifier. The noninverting input of the error

amplifier connects to a 1.25-V reference.

3 COMP I/O Error amplifier output and PWM comparator input: The control loop compensation components connect

between this pin and the FB pin.

4 VCC O Output of the internal, high-voltage linear regulator: This pin must be bypassed to the GND pin with a

ceramic capacitor.

5 OUT OOutput of MOSFET gate driver: Connect this pin to the gate of the external MOSFET. The gate driver has

a 1-A peak current capability.

6 GND — System ground

7 UVLO I Input undervoltage lockout: Set the start-up and shutdown levels by connecting this pin to the input voltage

through a resistor divider. A 20-µA current source provides hysteresis.

8 CS I Current sense input: Input for the switch current used for current mode control and for current limiting.

9 RT/SYNC I Oscillator frequency adjust pin and synchronization input: An external resistor connected from this pin to

GND sets the oscillator frequency. This pin can also accept an AC-coupled input for synchronization from

an external clock.

10 SS I Soft-start pin: An external capacitor placed from this pin to ground is charged by a 10-µA current source,

creating a ramp voltage to control the regulator start-up.

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(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) If Military/Aerospace specified devices are required, contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

(3) High junction temperatures degrade operating lifetimes. Operating lifetime is derated for junction temperatures greater than 125°C.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)

MIN MAX UNIT

VIN to GND –0.3 65 V

VCC to GND –0.3 16 V

RT/SYNC to GND –0.3 5.5 V

OUT to GND –1.5 for < 100 ns V

All other pins to GND –0.3 7 V

Power dissipation Internally limited

Junction temperature, TJ(3) 150 °C

Storage temperature, Tstg –65 150 °C

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) The human-body model is a 100-pF capacitor discharged through a 1.5-kΩresistor into each pin.

(3) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings VALUE UNIT

V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)(2) ±2000 V

Charged-device model (CDM), per JEDEC specification JESD22-C101(3) ±750

(1) Device thermal limitations may limit usable range

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)(1)

MIN MAX UNIT

Supply voltage 6 60 V

External voltage at VCC 7.5 14 V

Junction temperature –40 125 °C

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1) LM5022

UNITDGS (VSSOP)

10 PINS

RθJA Junction-to-ambient thermal resistance 161.5 °C/W

RθJC(top) Junction-to-case (top) thermal resistance 56 °C/W

RθJB Junction-to-board thermal resistance 81.3 °C/W

ψJT Junction-to-top characterization parameter 5.7 °C/W

ψJB Junction-to-board characterization parameter 80 °C/W

RθJC(bot) Junction-to-case (bottom) thermal resistance — °C/W

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(1) All Minimum and Maximum limits are specified by correlating the electrical characteristics to process and temperature variations and

applying statistical process control. The junction temperature (TJin °C) is calculated from the ambient temperature (TAin °C) and power

dissipation (PDin Watts) as follows: TJ= TA+ (PD× RθJA) where RθJA (in °C/W) is the package thermal impedance provided in Thermal

Information.

(2) VCC provides bias for the internal gate drive and control circuits.

(3) Device thermal limitations may limit usable range.

6.5 Electrical Characteristics

Typical limits apply for TJ=25°C and are provided for reference purposes only; minimum and maximum limits apply over the

junction temperature (TJ) range of –40°C to 125°C. VIN = 24 V and RT= 27.4 kΩ(unless otherwise noted).(1)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

SYSTEM PARAMETERS

VFB FB pin voltage 1.225 1.25 1.275 V

STARTUP REGULATOR

VCC VCC regulation(2) 10 V ≤VIN ≤60 V, ICC = 1 mA 6.6 7 7.4 V

6 V ≤VIN < 10V,

VCC Pin Open Circuit 5

ICC Supply current OUT Pin Capacitance = 0,

VCC = 10 V 3.5 4 mA

ICC-LIM VCC current limit VCC = 0 V(2)(3) 15 35 mA

VIN - VCC Dropout voltage across bypass switch ICC = 0 mA, ƒSW < 200 kHz,

6 V ≤VIN ≤8.5 V 200 mV

VBYP-HI Bypass switch turnoff threshold VIN increasing 8.7 V

VBYP-HYS Bypass switch threshold hysteresis VIN Decreasing 260 mV

ZVCC VCC pin output impedance

0 mA ≤ICC ≤5 mA

VIN = 6 V 58

ΩVIN = 8 V 53

VIN = 24 V 1.6

VCC-HI VCC pin UVLO rising threshold 5 V

VCC-HYS VCC pin UVLO falling hysteresis 300 mV

IVIN Startup regulator leakage VIN = 60 V 150 500 µA

IIN-SD Shutdown current VUVLO = 0 V, VCC = Open Circuit 350 450 µA

ERROR AMPLIFIER

GBW Gain bandwidth 4 MHz

ADC DC gain 75 dB

ICOMP COMP pin current sink capability VFB = 1.5 V, VCOMP = 1 V 5 17 mA

UVLO

VSD Shutdown threshold 1.22 1.25 1.28 V

ISD-HYS Shutdown hysteresis current source 16 20 24 µA

CURRENT LIMIT

tLIM-DLY Delay from ILIM to output CS steps from 0 V to 0.6 V, OUT

transitions to 90% of VCC 30 ns

VCS Current limit threshold voltage 0.45 0.5 0.55 V

tBLK Leading edge blanking time 65 ns

RCS CS pin sink impedance Blanking active 40 75 Ω

SOFT START

ISS Soft-start current source 7 10 13 µA

VSS-OFF Soft start to COMP offset 0.35 0.55 0.75 V

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Electrical Characteristics (continued)

Typical limits apply for TJ=25°C and are provided for reference purposes only; minimum and maximum limits apply over the

junction temperature (TJ) range of –40°C to 125°C. VIN = 24 V and RT= 27.4 kΩ(unless otherwise noted).(1)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

(4) Specification applies to the oscillator frequency.

OSCILLATOR

fSW

RT to GND = 84.5 kΩ170(4) 200 230 kHz

RT to GND = 27.4 kΩSee(4) 525 600 675 kHz

RT to GND = 16.2 kΩSee(4) 865 990 1115 kHz

VSYNC-HI Synchronization rising threshold 3.8 V

PWM COMPARATOR

tCOMP-DLY Delay from COMP to OUT transition VCOMP = 2 V, CS stepped

from 0 V to 0.4 V 25 ns

DMIN Minimum duty cycle VCOMP = 0 V 0%

DMAX Maximum duty cycle 90% 95%

APWM COMP to PWM comparator gain 0.33 V/V

VCOMP-OC COMP pin open circuit voltage VFB = 0 V 4.3 5.2 6.1 V

ICOMP-SC COMP pin short circuit current VCOMP = 0 V, VFB = 1.5 V 0.6 1.1 1.5 mA

SLOPE COMPENSATION

VSLOPE Slope compensation amplitude 83 110 137 mV

MOSFET DRIVER

VSAT-HI Output high saturation voltage (VCC – VOUT) IOUT = 50 mA 0.25 0.75 V

VSAT-LO Output low saturation voltage (VOUT) IOUT = 100 mA 0.25 0.75 V

tRISE OUT pin rise time OUT Pin load = 1 nF 18 ns

tFALL OUT pin fall time OUT Pin load = 1 nF 15 ns

THERMAL CHARACTERISTICS

TSD Thermal shutdown threshold 165 °C

TSD-HYS Thermal shutdown hysteresis 25 °C

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6.6 Typical Characteristics

VO= 40 V

Figure 1. Efficiency, Example Circuit BOM

VIN = 24 V

Figure 2. VFB vs Temperature

TA= 25°C

Figure 3. VFB vs VIN

TA= 25°C

Figure 4. VCC vs VIN

TA= 25°C

Figure 5. Maximum Duty Cycle vs ƒSW

RT= 16.2 KΩ

Figure 6. ƒSW vs Temperature

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Typical Characteristics (continued)

TA= 25°C

Figure 7. RTvs ƒSW Figure 8. SS vs Temperature

Figure 9. OUT Pin TRISE vs Gate Capacitance Figure 10. OUT Pin TFALL vs Gate Capacitance

LOGIC

OSC

VCC

LOGIC

OUT

7V SERIES

REGULATOR REFERENCE

DRIVER

RT/SYNC

CLK

ENABLE

5 V

1.25 V

UVLO

HYSTERESIS

(20 µA)

UVLO +

1.25 V

Max

Duty

Limit

10 µA

CS 0.5 V

PWM

45 µA

2 NŸ

5 k

5 V

1.4 V

100 NŸ

50 NŸ

COMP 1.25 V

CLK + LEB

BYPASS

SWITCH

(6 V to 8.7 V)

GND

VIN

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7 Detailed Description

7.1 Overview

The LM5022 is a low-side, N-channel MOSFET controller that contains all of the features required to implement

single-ended power converter topologies. The LM5022 includes a high-voltage start-up regulator that operates

over a wide input range of 6 V to 60 V. The PWM controller is designed for high-speed capability including an

oscillator frequency range up to 2.2 MHz and total propagation delays less than 100 ns. Additional features

include an error amplifier, precision reference, input undervoltage lockout, cycle-by-cycle current limit, slope

compensation, soft start, oscillator sync capability, and thermal shutdown.

The LM5022 is designed for current-mode control power converters that require a single drive output, such as

boost and SEPIC topologies. The LM5022 provides all of the advantages of current-mode control including input

voltage feedforward, cycle-by-cycle current limiting, and simplified loop compensation.

7.2 Functional Block Diagram

VIN

GND

UVLO

LM5022

VIN

ON/OFF

RUV2

RUV1

2N7000 or

Equivalent

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7.3 Feature Description

7.3.1 High-Voltage Start-Up Regulator

The LM5022 contains an internal high-voltage start-up regulator that allows the VIN pin to be connected directly

to line voltages as high as 60 V. The regulator output is internally current limited to 35 mA (typical). When power

is applied, the regulator is enabled and sources current into an external capacitor, CF, connected to the VCC pin.

The recommended capacitance range for CFis 0.1 µF to 100 µF. When the voltage on the VCC pin reaches the

rising threshold of 5 V, the controller output is enabled. The controller remains enabled until VCC falls below 4.7

V. In applications using a transformer, an auxiliary winding can be connected through a diode to the VCC pin.

This winding must raise the VCC pin voltage to above 7.5 V to shut off the internal start-up regulator. Powering

VCC from an auxiliary winding improves conversion efficiency while reducing the power dissipated in the

controller. The capacitance of CFmust be high enough that it maintains the VCC voltage greater than the VCC

UVLO falling threshold (4.7 V) during the initial start-up. During a fault condition when the converter auxiliary

winding is inactive, external current draw on the VCC line must be limited such that the power dissipated in the

start-up regulator does not exceed the maximum power dissipation capability of the controller.

An external start-up or other bias rail can be used instead of the internal start-up regulator by connecting the

VCC and the VIN pins together and feeding the external bias voltage (7.5 V to 14 V) to the two pins.

7.3.2 Input Undervoltage Detector

The LM5022 contains an input undervoltage lockout (UVLO) circuit. UVLO is programmed by connecting the

UVLO pin to the center point of an external voltage divider from VIN to GND. The resistor divider must be

designed such that the voltage at the UVLO pin is greater than 1.25 V when VIN is in the desired operating

range. If the undervoltage threshold is not met, all functions of the controller are disabled and the controller

remains in a low power standby state. UVLO hysteresis is accomplished with an internal 20-µA current source

that is switched on or off into the impedance of the setpoint divider. When the UVLO threshold is exceeded, the

current source is activated to instantly raise the voltage at the UVLO pin. When the UVLO pin voltage falls below

the 1.25-V threshold the current source is turned off, causing the voltage at the UVLO pin to fall. The UVLO pin

can also be used to implement a remote enable or disable function. If an external transistor pulls the UVLO pin

below the 1.25-V threshold, the converter is disabled. This external shutdown method is shown in Figure 11.

Figure 11. Enable or Disable Using UVLO

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Feature Description (continued)

7.3.3 Error Amplifier

An internal high gain error amplifier is provided within the LM5022. The amplifier’s noninverting input is internally

set to a fixed reference voltage of 1.25 V. The inverting input is connected to the FB pin. In non-isolated

applications such as the boost converter the output voltage, VO, is connected to the FB pin through a resistor

divider. The control loop compensation components are connected between the COMP and FB pins. For most

isolated applications, the error amplifier function is implemented on the secondary side of the converter and the

internal error amplifier is not used. The internal error amplifier is configured as an open-drain output and can be

disabled by connecting the FB pin to ground. An internal 5-kΩpullup resistor between a 5-V reference and

COMP can be used as the pullup for an opto-coupler in isolated applications.

7.3.4 Current Sensing and Current Limiting

The LM5022 provides a cycle-by-cycle over current protection function. Current limit is accomplished by an

internal current sense comparator. If the voltage at the current sense comparator input exceeds 0.5 V, the

MOSFET gate drive is immediately terminated. A small RC filter, placed near the controller, is recommended to

filter noise from the current sense signal. The CS input has an internal MOSFET which discharges the CS pin

capacitance at the conclusion of every cycle. The discharge device remains on an additional 65 ns after the

beginning of the new cycle to attenuate leading edge ringing on the current sense signal.

The LM5022 current sense and PWM comparators are very fast, and may respond to short duration noise

pulses. Layout considerations are critical for the current sense filter and sense resistor. The capacitor associated

with the CS filter must be placed very close to the device and connected directly to the pins of the controller (CS

and GND). If a current sense transformer is used, both leads of the transformer secondary must be routed to the

sense resistor and the current sense filter network. The current sense resistor can be placed between the source

of the primary power MOSFET and power ground, but it must be a low inductance type. When designing with a

current sense resistor all of the noise sensitive low-power ground connections must be connected together

locally to the controller and a single connection must be made to the high current power ground (sense resistor

ground point).

7.3.5 PWM Comparator and Slope Compensation

The PWM comparator compares the current ramp signal with the error voltage derived from the error amplifier

output. The error amplifier output voltage at the COMP pin is offset by 1.4 V and then further attenuated by a 3:1

resistor divider. The PWM comparator polarity is such that 0 V on the COMP pin results in a zero duty cycle at

the controller output. For duty cycles greater than 50%, current mode control circuits can experience sub-

harmonic oscillation. By adding an additional fixed-slope voltage ramp signal (slope compensation) this

oscillation can be avoided. Proper slope compensation damps the double pole associated with current mode

control (see Control Loop Compensation) and eases the design of the control loop compensator. The LM5022

generates the slope compensation with a sawtooth-waveform current source with a slope of 45 µA × ƒSW,

generated by the clock (see Figure 12). This current flows through an internal 2-kΩresistor to create a minimum

compensation ramp with a slope of 100 mV × ƒSW (typical). The slope of the compensation ramp increases when

external resistance is added for filtering the current sense (RS1) or in the position RS2. As shown in Figure 12 and

the Functional Block Diagram, the sensed current slope and the compensation slope add together to create the

signal used for current limiting and for the control loop itself.

( )

T11

1 8 10 f

f 5.77 10

- ´ ´

´ ´

45 µA

2 NŸ

LM5022

ISW

RS2

RS1

RSNS CSNS

VCL

0.5V Current

Limit

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Feature Description (continued)

Figure 12. Slope Compensation

In peak current mode control, the optimal slope compensation is proportional to the slope of the inductor current

during the power switch off-time. For boost converters, the inductor current slope while the MOSFET is off is

(VO– VIN) / L. This relationship is combined with the requirements to set the peak current limit and is used to

select RSNS and RS2 in Application and Implementation.

7.3.6 Soft Start

The soft-start feature allows the power converter output to gradually reach the initial steady-state output voltage,

thereby reducing start-up stresses and current surges. At power on, after the VCC and input undervoltage

lockout thresholds are satisfied, an internal 10-µA current source charges an external capacitor connected to the

SS pin. The capacitor voltage ramps up slowly and limits the COMP pin voltage and the switch current.

7.3.7 MOSFET Gate Driver

The LM5022 provides an internal gate driver through the OUT pin that can source and sink a peak current of 1 A

to control external, ground-referenced N-channel MOSFETs.

7.3.8 Thermal Shutdown

Internal thermal shutdown circuitry is provided to protect the LM5022 in the event that the maximum junction

temperature is exceeded. When activated, typically at 165°C, the controller is forced into a low power standby

state, disabling the output driver and the VCC regulator. After the temperature is reduced (typical hysteresis is

25°C) the VCC regulator is re-enabled and the LM5022 performs a soft start.

7.4 Device Functional Modes

7.4.1 Oscillator, Shutdown, and SYNC

A single external resistor, RT, connected between the RT/SYNC and GND pins sets the LM5022 oscillator

frequency. To set the switching frequency (ƒSW), RTcan be calculated with Equation 1.

where

• fSW is in Hz

• RTis in Ω(1)

RT/SYNC

LM5022

EXTERNAL

CLOCK CSS

100 pF

120 ns

(Typical)

EXTERNAL

CLOCK

OUT PIN

15 ns to 150 ns

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Device Functional Modes (continued)

The LM5022 can also be synchronized to an external clock. The external clock must have a higher frequency

than the free-running oscillator frequency set by the RTresistor. The clock signal must be capacitively coupled

into the RT/SYNC pin with a 100-pF capacitor as shown in Figure 13. A peak voltage level greater than 3.8 V at

the RT/SYNC pin is required for detection of the sync pulse. The sync pulse width must be set between 15 ns to

150 ns by the external components. The RTresistor is always required, whether the oscillator is free-running or

externally synchronized. The voltage at the RT/SYNC pin is internally regulated to 2 V, and the typical delay from

a logic high at the RT/SYNC pin to the rise of the OUT pin voltage is 120 ns. RTmust be placed very close to the

device and connected directly to the pins of the controller (RT/SYNC and GND).

Figure 13. SYNC Operation

VIN

FBCOMP

VCC

OUT

UVLO GND

LM5022

L1 D1

C2R1

CSS

CO1,2

CIN1,2

RUV1

RUV2

RFB1

RFB2

RSNS

VIN = 9 V to 16 V VO = 40 V

CCS

RS1

CINX

RS2

COX

O IN D

O D

V - V + V

DV + V

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8 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component

specification, and TI does not warrant its accuracy or completeness. TI’s customers are

responsible for determining suitability of components for their purposes. Customers should

validate and test their design implementation to confirm system functionality.

8.1 Application Information

The most common circuit controlled by the LM5022 is a non-isolated boost regulator. The boost regulator steps

up the input voltage and has a duty ratio D in Equation 2.

where

• VDis the forward voltage drop of the output diode (2)

The following is a design procedure for selecting all the components for the boost converter circuit shown in

Figure 14. The application is in-cabin automotive, meaning that the operating ambient temperature ranges from

–20°C to 85°C. This circuit operates in continuous conduction mode (CCM), where inductor current stays above

0 A at all times, and delivers an output voltage of 40 V ±2% at a maximum output current of 0.5 A. Additionally,

the regulator must be able to handle a load transient of up to 0.5 A while keeping VOwithin ±4%. The voltage

input comes from the battery or alternator system of an automobile, where the standard range of 9 V to 16 V and

transients of up to 32 V must not cause any malfunction.

8.2 Typical Application

Figure 14. LM5022 Typical Application

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Typical Application (continued)

8.2.1 Design Requirements

For typical low-side controller applications, use the parameters listed in Table 1.

Table 1. Design Parameters

DESIGN PARAMETER EXAMPLE VALUE

Input voltage range 9 V to 16 V

Output voltage 40 V

Maximum output current 500 mA

Switching frequency 500 kHz

8.2.2 Detailed Design Procedure

Table 2 lists the bill of materials for this design example.

Table 2. BOM for Example Circuit

ID PART NUMBER TYPE SIZE PARAMETERS QTY VENDOR

U1 LM5022 Low-Side Controller 10-pin VSSOP 60 V 1 TI

Q1 Si4850EY MOSFET SO-8 60 V, 31 mΩ, 27 nC 1 Vishay

D1 CMSH2-60M Schottky Diode SMA 60 V, 2 A 1 Central Semi

L1 SLF12575T-M3R2 Inductor 12.5 × 12.5 × 7.5 mm 33 µH, 3.2 A, 40 mΩ1 TDK

Cin1, Cin2 C4532X7R1H475M Capacitor 1812 4.7 µF, 50 V, 3 mΩ2 TDK

Co1, Co2 C5750X7R2A475M Capacitor 2220 4.7 µF,100 V, 3 mΩ2 TDK

Cf C2012X7R1E105K Capacitor 0805 1 µF, 25 V 1 TDK

Cinx

Cox C2012X7R2A104M Capacitor 0805 100 nF, 100 V 2 TDK

C1 VJ0805A561KXXAT Capacitor 0805 560 pF 10% 1 Vishay

C2 VJ0805Y124KXXAT Capacitor 0805 120 nF 10% 1 Vishay

Css VJ0805Y103KXXAT Capacitor 0805 10 nF 10% 1 Vishay

Ccs VJ0805Y102KXXAT Capacitor 0805 1 nF 10% 1 Vishay

R1 CRCW08053011F Resistor 0805 3.01 kΩ1% 1 Vishay

Rfb1 CRCW08056490F Resistor 0805 649 Ω1% 1 Vishay

Rfb2 CRCW08052002F Resistor 0805 20 kΩ1% 1 Vishay

Rs1 CRCW0805101J Resistor 0805 100 Ω5% 1 Vishay

Rs2 CRCW08053571F Resistor 0805 3.57 kΩ1% 1 Vishay

Rsns ERJL14KF10C Resistor 1210 100 mΩ, 1%, 0.5 W 1 Panasonic

Rt CRCW08053322F Resistor 0805 33.2 kΩ1% 1 Vishay

Ruv1 CRCW08052611F Resistor 0805 2.61 kΩ1% 1 Vishay

Ruv2 CRCW08051002F Resistor 0805 10 kΩ1% 1 Vishay

8.2.2.1 Switching Frequency

The selection of switching frequency is based on the tradeoffs between size, cost, and efficiency. In general, a

lower frequency means larger, more expensive inductors and capacitors is required. A higher switching

frequency generally results in a smaller but less efficient solution, as the power MOSFET gate capacitances must

be charged and discharged more often in a given amount of time. For this application, a frequency of 500 kHz

was selected as a good compromise between the size of the inductor and efficiency. PCB area and component

height are restricted in this application. Following Equation 1, a 33.2-kΩ1% resistor must be used to switch at

500 kHz.

c DSON

P D R 1.3

1 D

ª º

§ ·

u u u

« »

¨ ¸



« »

¬ ¼

LM5022

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8.2.2.2 MOSFET

Selection of the power MOSFET is governed by tradeoffs between cost, size, and efficiency. Breaking down the

losses in the MOSFET is one way to determine relative efficiencies between different devices. For this example,

the SO 8-pin package provides a balance of a small footprint with good efficiency (see Q1 in Table 2).

Losses in the MOSFET can be broken down into conduction loss, gate charging loss, and switching loss.

Conduction, or I2R loss (PC) is approximately Equation 3.

(3)

The factor 1.3 accounts for the increase in MOSFET on-resistance due to heating. Alternatively, the factor of 1.3

can be ignored and the maximum on-resistance of the MOSFET can be used.

Gate charging loss, PG, results from the current required to charge and discharge the gate capacitance of the

power MOSFET and is approximated with Equation 4.

PG= VCC × QG× fSW (4)

QGis the total gate charge of the MOSFET. Gate charge loss differs from conduction and switching losses

because the actual dissipation occurs in the LM5022 and not in the MOSFET itself. If no external bias is applied

to the VCC pin, additional loss in the LM5022 IC occurs as the MOSFET driving current flows through the VCC

regulator. This loss (PVCC) is estimated with Equation 5.

PVCC = (VIN – VCC) × QG× fSW (5)

Switching loss (PSW) occurs during the brief transition period as the MOSFET turns on and off. During the

transition period both current and voltage are present in the channel of the MOSFET. The loss can be

approximated with Equation 6.

PSW = 0.5 × VIN × [IO/ (1 – D)] × (tR+ tF) × ƒSW

where

• tRis the rise time of the MOSFET

• tFis the fall time of the MOSFET (6)

For this example, the maximum drain-to-source voltage applied across the MOSFET is VOplus the ringing due to

parasitic inductance and capacitance. The maximum drive voltage at the gate of the high-side MOSFET is VCC,

or 7 V typical. The MOSFET selected must be able to withstand 40 V plus any ringing from drain to source, and

be able to handle at least 7 V plus ringing from gate to source. A minimum voltage rating of 50-VD-S and 10-VG-S

MOSFET is used. Comparing the losses in a spreadsheet leads to a 60 VD-S rated MOSFET in SO-8 with an

RDSON of 22 mΩ(the maximum value is 31 mΩ), a gate charge of 27 nC, and rise and falls times of 10 ns and 12

ns, respectively.

8.2.2.3 Output Diode

The boost regulator requires an output diode D1 (see Figure 14) to carrying the inductor current during the

MOSFET off-time. The most efficient choice for D1 is a Schottky diode due to low forward drop and near-zero

reverse recovery time. D1 must be rated to handle the maximum output voltage plus any switching node ringing

when the MOSFET is on. In practice, all switching converters have some ringing at the switching node due to the

diode parasitic capacitance and the lead inductance. D1 must also be rated to handle the average output current,

IO.

The overall converter efficiency becomes more dependent on the selection of D1 at low duty cycles, where the

boost diode carries the load current for an increasing percentage of the time. This power dissipation can be

calculating by checking the typical diode forward voltage, VD, from the I-V curve on the diode's data sheet and

then multiplying it by IO. Diode data sheets also provides a typical junction-to-ambient thermal resistance, RθJA,

which can be used to estimate the operating die temperature of the Schottky. Multiplying the power dissipation

(PD= IO× VD) by RθJA gives the temperature rise. The diode case size can then be selected to maintain the

Schottky diode temperature below the operational maximum.

2 VIN (MIN) 0.6 0.4 16

L 15.4 H

0.5 0.5

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u u

1 VIN (MIN) 16 0.6

L 38.4 H

0.5 0.5

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2 VIN (MIN) 0.78 0.22 9

L 6.2 H

0.5 0.5

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u u

1 VIN (MIN) 9 0.78

L 15.3 H

0.5 0.92



2O SW

D(1 D) V

LI f

 u

1SW L

V D

Lf i

u '

LM5022

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In this example a Schottky diode rated to 60 V and 1 A is suitable, as the maximum diode current is 0.5 A. A

small case such as SOD-123 can be used if a small footprint is critical. Larger case sizes generally have lower

RθJA and lower forward voltage drop, so for better efficiency the larger SMA case size is used.

8.2.2.4 Boost Inductor

The first criterion for selecting an inductor is the inductance itself. In fixed-frequency boost converters this value

is based on the desired peak-to-peak ripple current, ΔiL, which flows in the inductor along with the average

inductor current, IL. For a boost converter in CCM ILis greater than the average output current, IO. The two

currents are related by Equation 7.

IL= IO/ (1 – D) (7)

As with switching frequency, the inductance used is a tradeoff between size and cost. Larger inductance means

lower input ripple current, however because the inductor is connected to the output during the off-time only there

is a limit to the reduction in output ripple voltage. Lower inductance results in smaller, less expensive magnetics.

An inductance that gives a ripple current of 30% to 50% of ILis a good starting point for a CCM boost converter.

Minimum inductance must be calculated with Equation 8 at the extremes of input voltage to find the operating

condition with the highest requirement.

(8)

By calculating in terms of amperes, volts, and megahertz, the inductance value comes out in micro henries.

To ensure that the boost regulator operates in CCM a second equation is required, and must also be evaluated

with Equation 9 at the corners of input voltage to find the minimum inductance required.

(9)

By calculating in terms of volts, amps, and megahertz, the inductance value comes out in µH.

For this design, ΔiLis set to 40% of the maximum IL. Duty cycle is evaluated first at VIN(MIN) and at VIN(MAX).

Second, the average inductor current is evaluated at the two input voltages. Third, the inductor ripple current is

determined. Finally, the inductance can be calculated, and a standard inductor value selected that meets all the

criteria.

1. Inductance for Minimum Input Voltage (Equation 10,Equation 11, and Equation 12)

DVIN(MIN) = (40 – 9 + 0.5) / (40 + 0.5) = 78% IL-VIN(MIN) = 0.5 / (1 – 0.78) = 2.3 A ΔiL= 0.4 × 2.3 A = 0.92 A (10)

(11)

(12)

2. Inductance for Maximum Input Voltage (Equation 13,Equation 14, and Equation 15)

DVIN(MAX) = (40 – 16 + 0.5) / (40 + 0.5) = 60% IL-VIN(MIAX) = 0.5 / (1 – 0.6) = 1.25 A ΔiL= 0.4 × 1.25 A = 0.5 A (13)

(14)

(15)

Maximum average inductor current occurs at VIN(MIN), and the corresponding inductor ripple current is 0.92 AP-P.

Selecting an inductance that exceeds the ripple current requirement at VIN(MIN) and the requirement to stay in

CCM for VIN(MAX) provides a tradeoff that allows smaller magnetics at the cost of higher ripple current at

maximum input voltage. For this example, a 33-µH inductor satisfies these requirements.

LSW

V x D

if L

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The second criterion for selecting an inductor is the peak current carrying capability. This is the level above

which the inductor saturates. In saturation, the inductance can drop off severely, resulting in higher peak current

that may overheat the inductor or push the converter into current limit. In a boost converter, peak current, IPK, is

equal to the maximum average inductor current plus one half of the ripple current. First, the current ripple must

be determined under the conditions that give maximum average inductor current with Equation 16.

(16)

Maximum average inductor current occurs at VIN(MIN). Using the selected inductance of 33 µH yields Equation 17.

ΔiL= (9 × 0.78) / (0.5 × 33) = 425 mAP-P (17)

The highest peak inductor current over all operating conditions is therefore Equation 18.

IPK = IL+ 0.5 × ΔiL= 2.3 + 0.213 = 2.51 A (18)

Hence an inductor must be selected that has a peak current rating greater than 2.5 A and an average current

rating greater than 2.3 A. One possibility is an off-the-shelf 33 µH ±20% inductor that can handle a peak current

of 3.2 A and an average current of 3.4 A. Finally, the inductor current ripple is recalculated with Equation 19 at

the maximum input voltage.

ΔiL-VIN(MAX) = (16 × 0.6) / (0.5 × 33) = 0.58 AP-P (19)

8.2.2.5 Output Capacitor

The output capacitor in a boost regulator supplies current to the load during the MOSFET on-time and also filters

the AC portion of the load current during the off-time. This capacitor determines the steady-state output voltage

ripple, ΔVO, a critical parameter for all voltage regulators. Output capacitors are selected based on their

capacitance, CO, their equivalent series resistance (ESR) and their RMS or AC current rating.

The magnitude of ΔVOis comprised of three parts, and in steady-state the ripple voltage during the on-time is

equal to the ripple voltage during the off-time. For simplicity the analysis is performed for the MOSFET turning off

(off-time) only. The first part of the ripple voltage is the surge created as the output diode D1 turns on. At this

point, inductor and diode current are at peak value, and the ripple voltage increase can be calculated with

Equation 20.

ΔVO1 = IPK × ESR (20)

The second portion of the ripple voltage is the increase due to the charging of COthrough the output diode. This

portion can be approximated with Equation 21.

ΔVO2 = (IO/ CO) × (D / ƒSW) (21)

The final portion of the ripple voltage is a decrease due to the flow of the diode and inductor current through the

ESR of the output capacitor. This decrease can be calculated with Equation 22.

ΔVO3 =ΔiL× ESR (22)

The total change in output voltage is Equation 23.

ΔVO=ΔVO1 +ΔVO2 –ΔVO3 (23)

The combination of two positive terms and one negative term may yield an output voltage ripple with a net rise or

a net fall during the converter off-time. The ESR of the output capacitor(s) has a strong influence on the slope

and direction of ΔVO. Capacitors with high ESR such as tantalum and aluminum electrolytic create an output

voltage ripple that is dominated by ΔVO1 and ΔVO3, with a shape shown in Figure 15. Ceramic capacitors, in

contrast, have very low ESR and lower capacitance. The shape of the output ripple voltage is dominated by

ΔVO2, with a shape shown in Figure 16.

O RMS L

I 1.13 I D (1 D)

 u u u 

VOÂvO

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Figure 15. ΔVOUsing High-ESR Capacitors Figure 16. ΔVOUsing Low-ESR Capacitors

For this example the small size and high temperature rating of ceramic capacitors make them a good choice.

The output ripple voltage waveform of Figure 16 is assumed, and the capacitance is selected first. The desired

ΔVOis ±2% of 40 V, or 0.8 VP-P. Beginning with the calculation for ΔVO2, the required minimum capacitance is in

Equation 24.

CO-MIN = (IO/ΔVO) x (DMAX / fSW) CO-MIN = (0.5 / 0.8) x (0.77 / 5 x 105) = 0.96 µF (24)

The next higher standard 20% capacitor value is 1 µF, however to provide margin for component tolerance and

load transients two capacitors rated 4.7 µF each (CO= 9.4 µF) is used. Ceramic capacitors rated 4.7 µF ±20%

are available from many manufacturers. The minimum quality dielectric that is suitable for switching power supply

output capacitors is X5R, while X7R (or better) is preferred. Pay careful attention to the DC voltage rating and

case size, as ceramic capacitors can lose 60% or more of their rated capacitance at the maximum DC voltage.

This is the reason that ceramic capacitors are often de-rated to 50% of their capacitance at their working voltage.

The output capacitors for this example has a 100-V rating in a 2220 case size.

The typical ESR of the selected capacitors is 3 mΩeach, and in parallel is approximately 1.5 mΩ. The worst-

case value for ΔVO1 occurs during the peak current at minimum input voltage in Equation 25.

ΔVO1 = 2.5 × 0.0015 = 4 mV (25)

The worst-case capacitor charging ripple occurs at maximum duty cycle in Equation 26.

ΔVO2 = (0.5 / 9.4 × 10–6) x (0.77 / 5 × 105) = 82 mV (26)

Finally, the worst-case value for ΔVO3 occurs when inductor ripple current is highest, at maximum input voltage in

Equation 27.

ΔVO3 = 0.58 × 0.0015 = 1 mV (negligible) (27)

The output voltage ripple can be estimated by summing the three terms in Equation 28.

ΔVO= 4 mV + 82 mV - 1 mV = 85 mV (28)

The RMS current through the output capacitor(s) can be estimated using the following, worst-case equation in

Equation 29.

(29)

The highest RMS current occurs at minimum input voltage. For this example the maximum output capacitor RMS

current is calculated with Equation 30.

IO-RMS(MAX) = 1.13 × 2.3 × (0.78 x 0.22)0.5 = 1.08 ARMS (30)

These 2220 case size devices are capable of sustaining RMS currents of over 3 A each, making them more than

adequate for this application.

MIN 2

2 1 40 0.5

C 4.9 F

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1 D V

ESR 2 x I

 u'

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8.2.2.6 VCC Decoupling Capacitor

The VCC pin must be decoupled with a ceramic capacitor placed as close as possible to the VCC and GND pins

of the LM5022. The decoupling capacitor must have a minimum X5R or X7R type dielectric to ensure that the

capacitance remains stable over voltage and temperature, and be rated to a minimum of 470 nF. One good

choice is a 1-µF device with X7R dielectric and 1206 case size rated to 25 V.

8.2.2.7 Input Capacitor

The input capacitors to a boost regulator control the input voltage ripple (ΔVIN) hold up the input voltage during

load transients and prevent impedance mismatch (also called power supply interaction) between the LM5022 and

the inductance of the input leads. Selection of input capacitors is based on their capacitance, ESR, and RMS

current rating. The minimum value of ESR can be selected based on the maximum output current transient,

ISTEP, using Equation 31.

(31)

For this example, the maximum load step is equal to the load current or 0.5 A. The maximum permissable ΔVIN

during load transients is 4%P-P.ΔVIN and duty cycle are taken at minimum input voltage to give the worst-case

value in Equation 32.

ESRMIN = [(1 – 0.77) × 0.36] / (2 × 0.5) = 83 mΩ(32)

The minimum input capacitance can be selected based on ΔVIN, based on the drop in VIN during a load transient,

or based on prevention of power supply interaction. In general, the requirement for greatest capacitance comes

from the power supply interaction. The inductance and resistance of the input source must be estimated, and if

this information is not available, they can be assumed to be 1 µH and 0.1 Ω, respectively. Minimum capacitance

is then estimated with Equation 33.

(33)

As with ESR, the worst-case, highest minimum capacitance calculation comes at the minimum input voltage.

Using the default estimates for LSand RS, minimum capacitance is calculated with Equation 34.

(34)

The next highest standard 20% capacitor value is 6.8 µF, but because the actual input source impedance and

resistance are not known, two 4.7-µF capacitors is used. In general, doubling the calculated value of input

capacitance provides a good safety margin. The final calculation is for the RMS current. For boost converters

operating in CCM this can be estimated with Equation 35.

IRMS = 0.29 × ΔiL(MAX) (35)

From the inductor section, maximum inductor ripple current is 0.58 A, hence the input capacitor(s) must be rated

to handle 0.29 × 0.58 = 170 mARMS.

The input capacitors can be ceramic, tantalum, aluminum, or almost any type, however the low capacitance

requirement makes ceramic capacitors particularly attractive. As with the output capacitors, the minimum quality

dielectric used must X5R, with X7R or better preferred. The voltage rating for input capacitors requirement not be

as conservative as the output capacitors, as the requirement for capacitance decreases as input voltage

increases. For this example, the capacitor selected is 4.7 µF ±20%, rated to 50 V in the 1812 case size. The

RMS current rating of these capacitors is over 2 A each, more than enough for this application.

8.2.2.8 Current Sense Filter

Parasitic circuit capacitance, inductance and gate drive current create a spike in the current sense voltage at the

point where Q1 turns on. To prevent this spike from terminating the on-time prematurely, every circuit must have

a low-pass filter that consists of CCS and RS1, shown in Figure 14. The time constant of this filter must be long

enough to reduce the parasitic spike without significantly affecting the shape of the actual current sense voltage.

The recommended range for RS1 is between 10 Ωand 500 Ω, and the recommended range for CCS is between

100 pF and 2.2 nF. For this example, the values of RS1 and CCS is 100 Ωand 1 nF, respectively.

S2 0.5 3 0.1

R 2000 100 3598

45 0.78

 u

  :

P u

CL ILIM SNS

S2 S1

V I R

R 2000 R

45 D

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 

P u

CS SNS

P R D

1 D

ª º

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u u

¨ ¸

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 

SNS 33 0.5 0.5

R40 9 3 0.78 33 0.5 3

u u

 u u  u u

 

SW CL

SNS O IN SW LIM

L f V

RV V 3 D L f I

u u

 u u  u u

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8.2.2.9 RSNS, RS2 and Current Limit

The current sensing resistor RSNS is used for steady-state regulation of the inductor current and to sense

overcurrent conditions. The slope compensation resistor is used to ensure control loop stability, and both

resistors affect the current limit threshold. The RSNS value selected must be low enough to keep the power

dissipation to a minimum, yet high enough to provide good signal-to-noise ratio for the current sensing circuitry.

RSNS, and RS2 must be set so that the current limit comparator, with a threshold of 0.5 V, trips before the sensed

current exceeds the peak current rating of the inductor, without limiting the output power in steady state.

For this example the peak current, at VIN(MIN), is 2.5 A, while the inductor itself is rated to 3.2 A. The threshold for

current limit, ILIM, is set slightly between these two values to account for tolerance of the circuit components, at a

level of 3 A. The required resistor calculation must take both the switch current through RSNS and the

compensation ramp current flowing through the internal 2 kΩ, RS1 and RS2 resistors into account. RSNS must be

selected first because it is a power resistor with more limited selection. Equation 36 and Equation 37 must be

evaluated at VIN(MIN), when duty cycle is highest.

(36)

where

• L is in µH

• fSW in MHz (37)

The closest 5% value is 100 mΩ. Power dissipation in RSNS can be estimated by calculating the average current.

The worst-case average current through RSNS occurs at minimum input voltage/maximum duty cycle and can be

calculated with Equation 38 and Equation 39.

(38)

PCS = [(0.5 / 0.22)2× 0.1] × 0.78 = 0.4 W (39)

For this example, a 0.1 Ω±1%, thick-film chip resistor in a 1210 case size rated to 0.5 W is used.

With RSNS selected, RS2 can be determined using Equation 40 and Equation 41.

(40)

(41)

The closest 1% tolerance value is 3.57 kΩ.

8.2.2.10 Control Loop Compensation

The LM5022 uses peak current-mode PWM control to correct changes in output voltage due to line and load

transients. Peak current-mode provides inherent cycle-by-cycle current limiting, improved line transient response,

and easier control loop compensation.

The control loop is comprised of two parts. The first is the power stage, which consists of the pulse width

modulator, output filter, and the load. The second part is the error amplifier, which is an op-amp configured as an

inverting amplifier. Figure 17 shows the regulator control loop components.

PS SNS

(1 D) R

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PS PS 2

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VREF +

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RFB2

RFB1

RSNS

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Figure 17. Power Stage and Error Amplifier

One popular method for selecting the compensation components is to create Bode plots of gain and phase for

the power stage and error amplifier. Combined, they make the overall bandwidth and phase margin of the

regulator easy to determine. Software tools such as Excel, MathCAD, and Matlab are useful for observing how

changes in compensation or the power stage affect system gain and phase.

The power stage in a CCM peak current mode boost converter consists of the DC gain, APS, a single low-

frequency pole, ƒLFP, the ESR zero, ƒZESR, a right-half plane zero, ƒRHP, and a double pole resulting from the

sampling of the peak current. The power stage transfer function (also called the control-to-output transfer

function) can be written with Equation 42,Equation 43, and Equation 44.

where

• the DC gain is defined as: (42)

where (43)

RO= VO/ IO(44)

100 1k 10k 100k 1M

FREQUENCY (Hz)

-30

-15

POWER STAGE GAIN (dB)

100 1k 10k 100k 1M

FREQUENCY (Hz)

-180

-120

-60

120

180

POWER STAGE PHASE (°)

D 0.5 (1 D)S

ª º

S    

« »

¬ ¼

RHP

§ ·

u¨ ¸

¨ ¸

 

LEP O O

0.5 R ESR C

u  u

ZESR C O

R C

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The system ESR zero is calculated with Equation 45.

(45)

The low-frequency pole is calculated with Equation 46.

(46)

The right-half plane zero is calculated with Equation 47.

(47)

The sampling double-pole quality factor is calculated with Equation 48.

(48)

The sampling double corner frequency is calculated with Equation 49.

ωn=π× fSW (49)

The natural inductor current slope is calculated with Equation 50.

Sn= RSNS × VIN / L (50)

The external ramp slope is calculated with Equation 51.

Se= 45 µA × (2000 + RS1 + RS2)] × ƒSW (51)

In Equation 43, DC gain is highest when input voltage and output current are at the maximum. In this the

example those conditions are VIN = 16 V and IO= 500 mA.

DC gain is 44 dB. The low-frequency pole fP=ωP/2πis at 423 Hz, the ESR zero fZ=ωZ/2πis at 5.6 MHz, and the

right-half plane zero ƒRHP =ωRHP/2πis at 61 kHz. The sampling double-pole occurs at one-half of the switching

frequency. Proper selection of slope compensation (through RS2) is most evident the sampling double pole. A

well-selected RS2 value eliminates peaking in the gain and reduces the rate of change of the phase lag. Gain and

phase plots for the power stage are shown in Figure 18 and Figure 19.

SPACE

Figure 18. Power Stage Gain and Phase Figure 19. Power Stage Gain and Phase

C1 = 2Œ×C2×R1×f -1

C2 :

2 R1 f

S u u

EA I FB2

Z1 s R1 C2 1

GZ R (C1 C2) s R1 C1 C2

s 1

C1 C2

u u 

§ ·

u u u 

¨ ¸



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The single pole causes a rolloff in the gain of –20 dB/decade at lower frequency. The combination of the RHP

zero and sampling double pole maintain the slope out to beyond the switching frequency. The phase tends

towards –90° at lower frequency but then increases to –180° and beyond from the RHP zero and the sampling

double pole. The effect of the ESR zero is not seen because its frequency is several decades above the

switching frequency. The combination of increasing gain and decreasing phase makes converters with RHP

zeroes difficult to compensate. Setting the overall control loop bandwidth to 1/3 to 1/10 of the RHP zero

frequency minimizes these negative effects, but requires a compromise in the control loop bandwidth. If this loop

were left uncompensated, the bandwidth would be 89 kHz and the phase margin –54°. The converter would

oscillate, and therefore is compensated using the error amplifier and a few passive components.

The transfer function of the compensation block (GEA) can be derived by treating the error amplifier as an

inverting op-amp with input impedance ZIand feedback impedance ZF. The majority of applications require a

Type II, or two-pole one-zero amplifier, shown in Figure 17. The LaPlace domain transfer function for this Type II

network is given by Equation 52.

(52)

Many techniques exist for selecting the compensation component values. The following method is based upon

setting the mid-band gain of the error amplifier transfer function first and then positioning the compensation zero

and pole:

1. Determine the desired control loop bandwidth: The control loop bandwidth (ƒ0dB) is the point at which the

total control loop gain (H = GPS × GEA) is equal to 0 dB. For this example, a low bandwidth of 10 kHz, or

approximately 1/6th of the RHP zero frequency, is chosen because of the wide variation in input voltage.

2. Determine the gain of the power stage at ƒ0dB:This value, A, can be read graphically from the gain plot of

GPS or calculated by replacing the ‘s’ terms in GPS with ‘2 πf0dB’. For this example, the gain at 10 kHz is

approximately 16 dB.

3. Calculate the negative of A and convert it to a linear gain: By setting the mid-band gain of the error amplifier

to the negative of the power stage gain at f0dB, the control loop gain equals 0 dB at that frequency. For this

example, –16 dB = 0.15 V/V.

4. Select the resistance of the top feedback divider resistor RFB2:This value is arbitrary, however selecting a

resistance between 10 kΩand 100 kΩleads to practical values of R1, C1, and C2. For this example, RFB2 =

20 kΩ1%.

5. Set Equation 55:

R1 = A × RFB2 (53)

For this example: R1 = 0.15 × 20000 = 3 kΩ

6. Select a frequency for the compensation zero, ƒZ1:The suggested placement for this zero is at the low-

frequency pole of the power stage, ƒLFP =ωLFP / 2π. For this example, ƒZ1 = ƒLFP = 423 Hz

7. Set Equation 54.

(54)

For this example, C2 = 125 nF

8. Select a frequency for the compensation pole, ƒP1:The suggested placement for this pole is at one-fifth of

the switching frequency. For this example, ƒP1 = 100 kHz

9. Set Equation 55.

(55)

For this example, C1 = 530 pF

100 1k 10k 100k 1M

FREQUENCY (Hz)

-180

-120

-60

120

180

OVERALL LOOP PHASE (°)

100 1k 10k 100k 1M

FREQUENCY (Hz)

-60

-40

-20

OVERALL LOOP GAIN (dB)

EA ACTUAL EA

G OPG

G1 G OPG



 u

2 GBW

OPG 2 GBW

S u



LM5022

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10. Plug the closest 1% tolerance values for RFB2 and R1, then the closest 10% values for C1 and C2 into GEA

and model the error amp: The open-loop gain and bandwidth of the LM5022’s internal error amplifier are 75

dB and 4 MHz, respectively. Their effect on GEA can be modeled using Equation 56:

(56)

ADC is a linear gain, the linear equivalent of 75 dB is approximately 5600 V/V. C1 = 560 pF 10%, C2 = 120

nF 10%, R1 = 3.01 kΩ1%

11. Plot or evaluate the actual error amplifier transfer function:

(57)

Figure 20. Overall Loop Gain and Phase

Figure 21. Overall Loop Gain and Phase

12. Plot or evaluate the complete control loop transfer function: The complete control loop transfer function is

obtained by multiplying the power stage and error amplifier functions together. The bandwidth and phase

margin can then be read graphically or evaluated numerically. The bandwidth of this example circuit at VIN =

16 V is 10.5 kHz with a phase margin of 66°.

IN RMS

CIN I ESR

u

O total loss

P P 

K 

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13. Re-evaluate at the corners of input voltage and output current: Boost converters exhibit significant change in

their loop response when VIN and IOchange. With the compensation fixed, the total control loop gain and

phase must be checked to ensure a minimum phase margin of 45° over both line and load.

8.2.2.11 Efficiency Calculations

A reasonable estimation for the efficiency of a boost regulator controlled by the LM5022 can be obtained by

adding together the loss is each current carrying element and using Equation 58.

(58)

The following shows an efficiency calculation to complement the circuit design. Output power for this circuit is 40

V × 0.5 A = 20 W. Input voltage is assumed to be 13.8 V, and the calculations used assume that the converter

runs in CCM. Duty cycle for VIN = 13.8 V is 66%, and the average inductor current is 1.5 A.

8.2.2.11.1 Chip Operating Loss

This term accounts for the current drawn at the VIN pin. This current, IIN, drives the logic circuitry and the power

MOSFETs. The gate driving loss term from MOSFET is included in the chip operating loss. For the LM5022, IIN is

equal to the steady-state operating current, ICC, plus the MOSFET driving current, IGC. Power is lost as this

current passes through the internal linear regulator of the LM5022 in Equation 59.

IGC = QG× ƒSW IGC = 27 nC × 500 kHz = 13.5 mA (59)

ICC is typically 3.5 mA (taken from Electrical Characteristics). Chip operating loss is then calculated with

Equation 60.

PQ= VIN × (IQ+ IGC) PQ= 13.8 × (3.5 m + 13.5m) = 235 mW (60)

8.2.2.11.2 MOSFET Switching Loss

PSW = 0.5 × VIN × IL× (tR+ tF) x fSW PSW = 0.5 × 13.8 × 1.5 × (10 ns + 12 ns) × 5 × 105= 114 mW (61)

8.2.2.11.3 MOSFET and RSNS Conduction Loss

PC= D × (IL2× (RDSON × 1.3 + RSNS)) PC= 0.66 × (1.52× (0.029 + 0.1)) = 192 mW (62)

8.2.2.11.4 Output Diode Loss

The average output diode current is equal to IOor 0.5 A. The estimated forward drop (VD) is 0.5 V. The output

diode loss is Equation 63.

PD1 = IO× VDPD1 = 0.5 × 0.5 = 0.25 W (63)

8.2.2.11.5 Input Capacitor Loss

This term represents the loss as input ripple current passes through the ESR of the input capacitor bank. In this

equation ‘n’ is the number of capacitors in parallel. The 4.7-µF input capacitors selected have a combined ESR

of approximately 1.5 mΩ, and ΔiLfor a 13.8-V input is 0.55 A in Equation 64 and Equation 65.

(64)

IIN-RMS = 0.29 × ΔiL= 0.29 × 0.55 = 0.16 A PCIN = [0.162× 0.0015] / 2 = 0.02 mW (negligible) (65)

8.2.2.11.6 Output Capacitor Loss

This term is calculated using the same method as the input capacitor loss, substituting the output capacitor RMS

current for VIN = 13.8 V. The combined ESR of the output capacitors is also approximately 1.5 mΩin

Equation 66.

IO-RMS = 1.13 × 1.5 × (0.66 x 0.34)0.5 = 0.8 A PCO = [0.8 × 0.0015] / 2 = 0.6 mW (66)

1 és/DIV

10V/DIV

1 és/DIV

50 mV/DIV

1 és/DIV

10V/DIV

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8.2.2.11.7 Boost Inductor Loss

The typical DCR of the selected inductor is 40 mΩin Equation 67.

PDCR = IL2× DCR PDCR = 1.52× 0.04 = 90 mW (67)

Core loss in the inductor is estimated to be equal to the DCR loss, adding an additional 90 mW to the total

inductor loss.

8.2.2.11.8 Total Loss

PLOSS = Sum of All Loss Terms = 972 mW (68)

8.2.2.11.9 Efficiency

η= 20 / (20 + 0.972) = 95% (69)

8.2.3 Application Curves

Figure 22. Efficiency

VIN = 9 V, IO= 0.5 A

Figure 23. Switch Node Voltage

VIN = 16 V, IO= 0.5 A

Figure 24. Switch Node Voltage

VIN = 9 V, IO= 0.5 A

Figure 25. Output Voltage Ripple AC Coupled

1 ms/DIV

1V/DIV

200 mA/DIV

1 és/DIV

50 mV/DIV

400 és/DIV

2V/DIV

200 mA/DIV

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VIN = 16 V, IO= 0.5 A

Figure 26. Output Voltage Ripple AC Coupled

VIN = 9 V, IO= 50 mA to 0.5 A

Figure 27. Load Transient Response

VIN = 16 V, IO= 50 mA to 0.5 A

Figure 28. Load Transient Response

9 Power Supply Recommendations

LM5022 is a power management device. The power supply for the device can be any DC voltage source within

the specified input range.

LM5022

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10 Layout

10.1 Layout Guidelines

To produce an optimal power solution with the LM5022, good layout and design of the PCB are as critical as

component selection. The following are the several guidelines to create a good layout of the PCB, as based on

Figure 14:

1. Using a low-ESR ceramic capacitor, place CINX as close as possible to the VIN and GND pins of the

LM5022.

2. Using a low-ESR ceramic capacitor, place COX close to the load as possible of the LM5022.

3. Using a low-ESR ceramic capacitor, place CFclose to the VCC and GND pins of the LM5022.

4. Minimize the loop area formed by the output capacitor connections (Co1, Co2) by D1 and Rsns. Make sure

the cathode of D1 and Rsns are positioned next to each other, and place Co1(+) and Co1(–) close to D1

cathode and Rsns(–) respectively.

5. Rsns(+) must be connected to the CS pin with a separate trace made as short as possible. This trace

must be routed away from the inductor and the switch node (where D1, Q1, and L1 connect).

6. Minimize the trace length to the FB pin by positioning RFB1 and RFB2 close to the LM5022.

7. Route the VOUT sense path away from noisy node and connect it as close as possible to the positive

side of COX.

10.1.1 Filter Capacitors

The low-value ceramic filter capacitors are most effective when the inductance of the current loops that they filter

is minimized. Place CINX as close as possible to the VIN and GND pins of the LM5022. Place COX close to the

load, and CFnext to the VCC and GND pins of the LM5022.

10.1.2 Sense Lines

The top of RSNS must be connected to the CS pin with a separate trace made as short as possible. Route this

trace away from the inductor and the switch node (where D1, Q1, and L1 connect). For the voltage loop, keep

RFB1/2 close to the LM5022 and run a trace from as close as possible to the positive side of COX to RFB2. As with

the CS line, the FB line must be routed away from the inductor and the switch node. These measures minimize

the length of high impedance lines and reduce noise pickup.

10.1.3 Compact Layout

Parasitic inductance can be reduced by keeping the power path components close together. As described in

Layout Guidelines, keep the high slew-rate current loops as tight as possible. Short, thick traces or copper pours

(shapes) are best.

The switch node must be just large enough to connect all the components together without excessive heating

from the current it carries. The LM5022 (boost converter) operates in two distinct cycles whose high current

paths are shown in Figure 29.

Figure 29. Boost Converter Current Loops

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Layout Guidelines (continued)

The dark grey, inner loops represents the high current paths during the MOSFET on-time. The light grey, outer

loop represents the high current path during the off-time.

10.1.4 Ground Plane and Shape Routing

The diagram of Figure 29 is also useful for analyzing the flow of continuous current versus the flow of pulsating

currents. The circuit paths with current flow during both the on-time and off-time are considered to be continuous

current, while those that carry current during the on-time or off-time only are pulsating currents. Preference in

routing must be given to the pulsating current paths, as these are the portions of the circuit most likely to emit

EMI. The ground plane of a PCB is a conductor and return path, and it is susceptible to noise injection just as

any other circuit path. The continuous current paths on the ground net can be routed on the system ground plane

with less risk of injecting noise into other circuits. The path between the input source, input capacitor and the

MOSFET and the path between the output capacitor and the load are examples of continuous current paths. In

contrast, the path between the grounded side of the power switch and the negative output capacitor terminal

carries a large pulsating current. This path must be routed with a short, thick shape, preferably on the component

side of the PCB. Multiple vias in parallel must be used right at the negative pads of the input and output

capacitors to connect the component side shapes to the ground plane. Vias must not be placed directly at the

grounded side of the MOSFET (or RSNS) as they tend to inject noise into the ground plane. A second pulsating

current loop that is often ignored but must be kept small is the gate drive loop formed by the OUT and VCC pins,

Q1, RSNS, and capacitor CF.

10.2 Layout Examples

Figure 30. Top Layer and Top Overlay

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Layout Examples (continued)

Figure 31. Bottom Layer

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11 Device and Documentation Support

11.1 Device Support

11.1.1 Third-Party Products Disclaimer

TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT

CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES

OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER

ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.

11.1.2 Design Support

WEBENCH®software uses an iterative design procedure and accesses comprehensive databases of

components. For more details, go to www.ti.com/webench.

11.2 Documentation Support

11.2.1 Related Documentation

For related documentation see the following:

AN-1557 LM5022 Evaluation Board (SNVA203)

11.3 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper

right corner, click on Alert me to register and receive a weekly digest of any product information that has

changed. For change details, review the revision history included in any revised document.

11.4 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective

contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of

Use.

TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration

among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help

solve problems with fellow engineers.

Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and

contact information for technical support.

11.5 Trademarks

E2E is a trademark of Texas Instruments.

WEBENCH is a registered trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

11.6 Electrostatic Discharge Caution

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

11.7 Glossary

SLYZ022 —TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.

12 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most

current data available for the designated devices. This data is subject to change without notice and revision of

this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

PACKAGE OPTION ADDENDUM

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Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status

(1)

Package Type Package

Drawing Pins Package

Qty Eco Plan

(2)

Lead/Ball Finish

(6)

MSL Peak Temp

(3)

Op Temp (°C) Device Marking

(4/5)

Samples

LM5022MM NRND VSSOP DGS 10 1000 TBD Call TI Call TI -40 to 125 5022

LM5022MM/NOPB ACTIVE VSSOP DGS 10 1000 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 5022

LM5022MME/NOPB ACTIVE VSSOP DGS 10 250 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 5022

LM5022MMX/NOPB ACTIVE VSSOP DGS 10 3500 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 5022

(1) The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance

do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may

reference these types of products as "Pb-Free".

RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.

Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based

flame retardants must also meet the <=1000ppm threshold requirement.

(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish

value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

PACKAGE OPTION ADDENDUM

www.ti.com 15-Dec-2017

Addendum-Page 2

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

OTHER QUALIFIED VERSIONS OF LM5022 :

•Automotive: LM5022-Q1

NOTE: Qualified Version Definitions:

•Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package

Type Package

Drawing Pins SPQ Reel

Diameter

(mm)

Reel

Width

W1 (mm)

(mm) B0

(mm) K0

(mm) P1

(mm) W

(mm) Pin1

Quadrant

LM5022MM VSSOP DGS 10 1000 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

LM5022MM/NOPB VSSOP DGS 10 1000 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

LM5022MME/NOPB VSSOP DGS 10 250 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

LM5022MMX/NOPB VSSOP DGS 10 3500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

PACKAGE MATERIALS INFORMATION

www.ti.com 15-Dec-2017

Pack Materials-Page 1

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

LM5022MM VSSOP DGS 10 1000 210.0 185.0 35.0

LM5022MM/NOPB VSSOP DGS 10 1000 210.0 185.0 35.0

LM5022MME/NOPB VSSOP DGS 10 250 210.0 185.0 35.0

LM5022MMX/NOPB VSSOP DGS 10 3500 367.0 367.0 35.0

PACKAGE MATERIALS INFORMATION

www.ti.com 15-Dec-2017

Pack Materials-Page 2

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