PolarTM Power MOSFETs VDSS ID25 IXTP02N120P IXTY02N120P RDS(on) = 1200V = 0.2A 75 N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C, RGS = 1M 1200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 0.2 A IDM TC = 25C, Pulse Width Limited by TJM 0.6 A IA EAS TC = 25C TC = 25C 0.2 40 A mJ dv/dt IS IDM, VDD VDSS, TJ 150C 10 V/ns PD TC = 25C 33 W -55 ... +150 150 -55 ... +150 C C C Features TJ TJM Tstg G G S D (Tab) G = Gate S = Source z 1.6mm (0.062) from Case for 10s 300 C z TSOLD Plastic Body for 10s 260 C z Md Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. Weight TO-220 TO-252 3.00 0.35 g g z z BVDSS VGS = 0V, ID = 250A 1200 VGS(th) VDS = VGS, ID = 100A 2.0 IGSS z 4.0 V VGS = 20V, VDS = 0V 50 nA IDSS VDS = VDSS, VGS = 0V 1 25 A A RDS(on) VGS = 10V, ID = 0.5 * ID25, Note 1 75 (c) 2013 IXYS CORPORATION, All Rights Reserved 60 International Standard Packages Avalanche Rated Low Package Inductance Easy to Mount Space Savings High Power Density Applications V TJ = 125C D = Drain Tab = Drain Advantages z Characteristic Values Min. Typ. Max. D (Tab) TO-252 (IXTY) TL Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) DS z z z z Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100201A(03/13) IXTP02N120P IXTY02N120P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs VDS = 30V, ID = 0.5 * ID25, Note 1 0.12 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS TO-220 Outline 0.20 S 104 8.6 1.9 pF pF pF 6 10 21 39 ns ns ns ns VGS= 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 4.70 0.37 3.20 nC nC nC TO-220 0.50 3.8 C/W C/W Resistive Switching Times VGS = 10V, VDS = 60V, ID = 0.5 * ID25, RG = 50 (External) Pins: 1 - Gate 3 - Source 2 - Drain Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 0.2 A ISM Repetitive, Pulse Width Limited by TJM 0.8 A VSD IF = IS, VGS = 0V, Note 1 1.3 V trr IRM QRM IF = 200mA, -di/dt = 50A/s, VR = 100V, VGS = 0V Note 1.6 3.5 2.8 s A C TO-252 Outline Pins: 1: Pulse test, t 300s, duty cycle, d 2%. Dim. 1 - Gate 3 - Source Millimeter Min. Max. 2,4 - Drain Inches Min. Max. A A1 2.19 0.89 2.38 1.14 0.086 0.035 0.094 0.045 A2 b 0 0.64 0.13 0.89 0 0.025 0.005 0.035 b1 b2 0.76 5.21 1.14 5.46 0.030 0.205 0.045 0.215 c c1 0.46 0.46 0.58 0.58 0.018 0.018 0.023 0.023 D D1 5.97 4.32 6.22 5.21 0.235 0.170 0.245 0.205 E E1 6.35 4.32 6.73 5.21 0.250 0.170 0.265 0.205 e e1 2.28 BSC 4.57 BSC H L 9.40 10.42 0.51 1.02 0.370 0.020 0.410 0.040 L1 L2 L3 0.64 0.89 2.54 0.025 0.035 0.100 0.040 0.050 0.115 1.02 1.27 2.92 0.090 BSC 0.180 BSC IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTP02N120P IXTY02N120P Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Extended Output Characteristics @ T J = 25C 200 1000 VGS = 10V 7V 6V 160 800 140 700 120 VGS = 10V 8V 7V 900 ID - MilliAmperes ID - MilliAmperes 180 5V 100 80 60 6V 600 500 400 5V 300 4V 40 200 20 4V 100 3V 0 0 0 2 4 6 8 10 12 14 0 50 100 150 200 250 300 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125C Fig. 4. RDS(on) Normalized to ID = 100mA Value vs. Junction Temperature 200 350 3.0 VGS = 10V 7V 180 VGS = 10V 2.6 140 R DS(on) - Normalized ID - MilliAmperes 160 6V 120 100 5V 80 60 2.2 I D = 200mA 1.8 I D = 100mA 1.4 1.0 40 0.6 4V 20 0 0.2 0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 100mA Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 220 5.0 200 VGS = 10V 4.5 180 160 TJ = 125C 3.5 ID - MilliAmperes R DS(on) - Normalized 4.0 3.0 2.5 2.0 140 120 100 80 TJ = 25C 60 1.5 40 1.0 20 0 0.5 0 100 200 300 400 500 600 ID - MilliAmperes (c) 2013 IXYS CORPORATION, All Rights Reserved 700 800 900 1000 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTP02N120P IXTY02N120P Fig. 8. Transconductance 400 300 350 TJ = - 40C 300 250 g f s - MilliSiemens ID - MilliAmperes Fig. 7. Input Admittance 350 200 TJ = 125C 25C - 40C 150 100 25C 250 125C 200 150 100 50 50 0 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5.5 50 100 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 200 250 300 350 Fig. 10. Gate Charge 10 800 VDS = 600V 9 700 I D = 100mA 8 600 I G = 1mA 7 500 VGS - Volts IS - MilliAmperes 150 ID - MilliAmperes 400 6 5 4 300 3 TJ = 125C 200 2 TJ = 25C 1 100 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.0 0.9 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 QG - NanoCoulombs VSD - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1,000 10.0 Ciss 100 Z(th)JC - C / W Capacitance - PicoFarads f = 1 MHz Coss 10 1.0 Crss 1 0 5 10 15 20 25 30 35 40 VDS - Volts 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_02N120P(F2)10-01-09