© 2013 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1200 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1200 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 0.2 A
IDM TC= 25°C, Pulse Width Limited by TJM 0.6 A
IATC= 25°C 0.2 A
EAS TC= 25°C 40 mJ
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PDTC= 25°C 33 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-220 3.00 g
TO-252 0.35 g
DS100201A(03/13)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 1200 V
VGS(th) VDS = VGS, ID = 100μA 2.0 4.0 V
IGSS VGS = ±20V, VDS = 0V ±50 nA
IDSS VDS = VDSS, VGS = 0V 1 μA
TJ = 125°C 25 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 60 75 Ω
PolarTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
IXTP02N120P
IXTY02N120P VDSS = 1200V
ID25 = 0.2A
RDS(on) ≤≤
≤≤
≤ 75ΩΩ
ΩΩ
Ω
Features
zInternational Standard Packages
zAvalanche Rated
zLow Package Inductance
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC-DC Converters
zLaser Drivers
zAC and DC Motor Drives
zRobotics and Servo Controls
G = Gate D = Drain
S = Source Tab = Drain
TO-252 (IXTY)
G
S
D (Tab)
TO-220 (IXTP)
D (Tab)
GDS
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXTP02N120P
IXTY02N120P
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Pins: 1 - Gate 2 - Drain
3 - Source
TO-220 Outline
TO-252 Outline
Pins: 1 - Gate 2,4 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 2.19 2.38 0.086 0.094
A1 0.89 1.14 0.035 0.045
A2 0 0.13 0 0.005
b 0.64 0.89 0.025 0.035
b1 0.76 1.14 0.030 0.045
b2 5.21 5.46 0.205 0.215
c 0.46 0.58 0.018 0.023
c1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 4.32 5.21 0.170 0.205
E 6.35 6.73 0.250 0.265
E1 4.32 5.21 0.170 0.205
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
H 9.40 10.42 0.370 0.410
L 0.51 1.02 0.020 0.040
L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 2.54 2.92 0.100 0.115
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 0.2 A
ISM Repetitive, Pulse Width Limited by TJM 0.8 A
VSD IF = IS, VGS = 0V, Note 1 1.3 V
trr 1.6 μs
IRM 3.5 A
QRM 2.8 μC
IF = 200mA, -di/dt = 50A/μs,
VR = 100V, VGS = 0V
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 30V, ID = 0.5 • ID25, Note 1 0.12 0.20 S
Ciss 104 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 8.6 pF
Crss 1.9 pF
td(on) 6 ns
tr 10 ns
td(off) 21 ns
tf 39 ns
Qg(on) 4.70 nC
Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 0.37 nC
Qgd 3.20 nC
RthJC 3.8 °C/W
RthCS TO-220 0.50 °C/W
Resistive Switching Times
VGS = 10V, VDS = 60V, ID = 0.5 • ID25,
RG = 50Ω (External)
© 2013 IXYS CORPORATION, All Rights Reserved
IXTP02N120P
IXTY02N120P
Fi g. 1. Outp u t Ch ar acteristics @ TJ = 25ºC
0
20
40
60
80
100
120
140
160
180
200
02468101214
V
DS
- Volts
I
D
- MilliAmperes
V
GS
= 10V
7V
6V
5
V
4
V
3
V
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
0
100
200
300
400
500
600
700
800
900
1000
0 50 100 150 200 250 300 350
V
DS
- Volts
I
D
- Mi lliAmper es
V
GS
= 10V
8V
7V
5
V
4
V
6
V
Fi g. 3. Ou tput Ch ar act er i sti cs @ TJ = 125ºC
0
20
40
60
80
100
120
140
160
180
200
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- MilliAmperes
V
GS
= 10V
7V
5
V
4V
6V
Fig. 4. RDS(on) Normalized to ID = 100mA Valu e v s.
Junction T emperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Deg ree s Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 200mA
I
D
= 100 mA
Fig. 5. RDS(on) No r mal i z ed to I D = 100mA Val u e vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 100 200 300 400 500 600 700 800 900 1000
I
D
- MilliAmp eres
R
DS(on)
- Normali zed
V
GS
= 10V
T
J
= 125 ºC
T
J
= 25ºC
Fi g. 6 . Maxi mu m D r ain C u r r ent vs.
Case Temper ature
0
20
40
60
80
100
120
140
160
180
200
220
-50 -25 0 25 50 75 100 125 150
T
C
- Deg ree s Centigrad e
I
D
- Mi lliAmper es
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXTP02N120P
IXTY02N120P
IXYS REF: T_02N120P(F2)10-01-09
Fig. 7. Input Admittance
0
50
100
150
200
250
300
350
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
GS
- V olts
I
D
- MilliAmperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. T ransconductance
0
50
100
150
200
250
300
350
400
0 50 100 150 200 250 300 350
I
D
- Mi lliAmp e res
g
f s
- MilliSiemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
100
200
300
400
500
600
700
800
0.3 0.4 0.5 0.6 0.7 0.8 0.9
V
SD
- V olts
I
S
- MilliAmperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Q
G
- Nan o Coul omb s
V
GS
- Volts
V
DS
= 600V
I
D
= 100mA
I
G
= 1mA
Fig. 11. Capacitance
1
10
100
1,000
0 5 10 15 20 25 30 35 40
V
DS
- V olts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Maximum Tr an si ent Thermal Imp edan ce
0.1
1.0
10.0
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W