(INTERSIL 2N5452-2N5454 Monolithic Dual N-Channel JFET FEATURES @ Offset Voltage 5 mV @ Drift 5 uv/C uve PIN CHIP Low Capacitance CONFIGURATION TOPOGRAPHY @ Low Output Conductance 1 zymho Max TO-74 6017 GENERAL DESCRIPTION Matched FET pairs for differential amplifiers. This family tp 073 + 007 of general purpose FETs is characterized for low and s Ve a Ls, medium frequency differential amplifier applications ozo 1 =) re . t G2 requiring low drift and low offset voltage. Ys - =p-L : 2 ABSOLUTE MAXIMUM RATINGS Source 3-emit @ 25C (untess otherwise noted) 5, 22 @ Gare 3x aaa . Sy Maximum Temperatures SO Storage Temperature -65C to +200C Operating Junction Temperature +150C Lead Temperature (Soldering, 10 sec. time limit) +300C Maximum Power Dissipation ORDERING INFORMATION Device Dissipation @ 85C Free Air Temperature One Side 250 mW TO-74 WAFER DICE Both Sides 500 mW 2N5452 | 2N5452/W | 2N5452/D Linear Derating 2N5453 | 2N5453/W_ | 2N5453/D One Side 2.86 mw/C 2N5454 | 2N5454/W | 2N5454/D Both Sides 4.3 mWPC Maximum Voltages & Currents Ves Gate to Source Voltage ~50 V Vepb Gate to Drain Voltage -50 V ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) 2N5452 2N5453 2NS454 PARAMETER min max | MIN. MAX | Min max. | 2NITS TEST CONDITIONS : ~100 -100 -100 pA = = less Gate Reverse Current "200 7200. =200 nA Vas =-30 V, Vps = 0 a Gate-Source Breakdown . - - - = ==1 yA BVGss Voltage 50 50 50 Vps = 0,1G mm VGSloff) Gate-Source Cutoff Voltage -1 4.5 -1 ~45 -1 -45 Vv Vps=20V. ip =1AA VG6s Gate-Source Voltage 02 -42 [| O72 -4.2 [02 472 Vps= 20 V Ip = s0nA Vasif) Gate-Source Forward Voltage 2 2 2 Vps =0,1g= 1A loss Saturation Drain Current 0.5 5.0 0.5 6.0 0.5 5.0 mA Vos = 20 VV Ves =0 Common-Source Forward 1000 3000 | 1000 3000 [1000 3000 f= 1 kHz fs, Transconductance 1000 1000 +000 mho Vos = 20 V, Veg =0 f = 100 MHz Common-Source Output 3.0 3.0 3.0 # f= kHz Sos Conductance 1.6 1.0 7) Vs = 20 Vi 1p = 200 uA Ciss Common Source Input 40 40 40 Common-Source Reverse _ Vps = 20V, ves =0 . Crss : 12 1.2 1.2 pF f= 1 MHz Transfer Capacitance Cdgo Drain-Gate Capacitance 16 15 1.5 VpG= 10 V, Is #0 > Equivalent Short Circuit nv = e= f=1kH n Input Noise Voltage 20 20 20 | Fe | Yos=20V,VGs=0 z Common-Source Spot . Vos = 20V, VG5=9 f= 100H NF Noise Figure o6 o8 O58 | 98 | Rg=10Ma ; lpss1/lpss2 Drain Saturation Current Ratio 0.95 1.0 0.95 1.0 } 0.95 1.0 Vos = 20 V, Vg5=0 Differential Gate-Source igs1-VGsal Voltage 5.0 10.0 15.0 Gate-Source Voltage - 9R : : . 0.4 08 . 20 | mv T= 25C to -55C AlVgsi-VGsal Differential Change with 08 10 25 Vps = 20 V, Ip = 200 na | T= 25C to +128C Temperature 9fs1/9fs2 Transconductance Ratio 0.97 1.0 0.97 10 0.95 1.0 Differential Output = f=1kH \90s1-Gos21 Conductance 0.25 0.25 0.25 | umhos 2 1-81