BYM11-50 thru BYM11-1000, RGL41A thru RGL41M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF(AV) 1.0 A VRRM 50 V to 1000 V IFSM 30 A trr 150 ns, 250 ns, 500 ns VF 1.3 V Tj max. 175 C (R) d* e t n Pate *Glass-plastic encapsulation is covered by Patent No. 3,996,602, brazed-lead assembly to Patent No. 3,930,306 DO-213AB Features Mechanical Data * Superectifier structure for high reliability condition * Patented glass-plastic encapsulation technique * Ideal for automated placement * Fast switching for high efficiency * Low leakage current * High forward surge capability * Meets environmental standard MIL-S-19500 * Meets MSL level 1, per J-STD-020C * Solder Dip 260 C, 40 seconds Case: DO-213AB, molded epoxy over glass body Epoxy meets UL-94V-0 Flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: Two bands indicate cathode end - 1st band denotes device type and 2nd band denotes repetitive peak reverse voltage rating Typical Applications For use in fast switching rectification of power supply, inverters, converters, and freewheeling diodes for consumer, automotive and Telecommunication Maximum Ratings (TA = 25 C unless otherwise noted) Parameter Symbols Fast switching time device: 1st band is Red Polarity color bands (2nd Band) BYM 11-50 BYM 11-100 BYM 11-200 BYM 11-400 BYM 11-600 BYM 11-800 BYM 11-1000 RGL 41A RGL 41B RGL 41D RGL 41G RGL 41J RGL 41K RGL 41M Units Gray Red Orange Yellow Green Blue Violet Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current at TT = 55 C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sinewave superimposed on rated load IFSM 30 A Maximum full load reverse current, full cycle average at TA = 55 C IR(AV) 50 A - 65 to + 175 C Operating junction and storage temperature range TJ, TSTG Document Number 88547 22-Sep-05 V www.vishay.com 1 BYM11-50 thru BYM11-1000, RGL41A thru RGL41M Vishay General Semiconductor Electrical Characteristics (TA = 25 C unless otherwise noted) Parameter Test condition Symbols at 1.0 A Maximum instantaneous forward voltage TA= 25 C TA= 125 C Maximum DC reverse current at rated DC blocking voltage BYM 11-50 BYM 11-100 BYM 11-200 BYM 11-400 BYM 11-600 BYM 11-800 BYM 11-1000 Units VF 1.3 V IR 5.0 50 A Maximum reverse recovery time at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr Typical junction capacitance at 4.0 V, 1 MHz CJ 150 250 500 ns 15 pF Thermal Characteristics (TA = 25 C unless otherwise noted) Parameter Symbols BYM 11-50 BYM 11-100 BYM 11-200 RJA RJT Maximum thermal resistance BYM 11-400 BYM 11-600 BYM 11-800 BYM 11-1000 C/W 75 (1) 30 Units (2) Notes: (1) Thermal resistance from junction to ambient, 0.24 x 0.24" (6.0 x 6.0 mm) copper pads to each terminal (2) Thermal resistance from junction to terminal, 0.24 x 0.24" (6.0 x 6.0 mm) copper pads to each terminal Ratings and Characteristics Curves (TA = 25 C unless otherwise noted) 30 Resistive or Inductive Load Peak Forward Surge Current (A) Average Forward Rectified Current (A) 1.25 1.0 0.75 0.5 0.25 25 20 15 10 0 0 50 25 75 100 125 150 175 1 100 10 Terminal Temperature (C) Number of Cycles at 60 Hz Figure 1. Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 TJ = TJ max. 8.3 ms Single Half Sine-Wave Document Number 88547 22-Sep-05 BYM11-50 thru BYM11-1000, RGL41A thru RGL41M Vishay General Semiconductor 100 Junction Capacitance (pF) Instantaneous Forward Current (A) 10 1 TJ = 25 C Pulse Width = 300 s 1% Duty Cycle 0.1 0.01 0.4 0.6 0.8 1.2 1.0 1.4 10 1 1.6 100 10 1 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Figure 5. Typical Junction Capacitance 10 100 Transient Thermal Impedance (C/W) Instantaneous Reverse Current (A) TJ = 25 C f = 1.0 MHz Vsig = 50mVp-p 1 TJ = 100 C 0.1 TJ = 25 C 20 40 60 80 10 1 0.1 0.01 0.01 0 Mounted on 0.20 x 0.27" (5 x 7mm) Copper Pad Areas 100 0.1 1 10 100 t - Pulse Duration (sec.) Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Characteristics Figure 6. Typical Transient Thermal Impedance Package outline dimensions in inches (millimeters) DO-213AB SOLDERABLE ENDS 1st BAND D2 0.022 (0.56) 0.018 (0.46) +0 D2 = D1 - 0.008 (0.20) D1= 0.105 0.095 (2.67) (2.41) 0.022 (0.56) 0.018 (0.46) 0.205 (5.2) 0.185(4.7) 1st band denotes type and positive end (cathode) Document Number 88547 22-Sep-05 www.vishay.com 3 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1