BYM11-50 thru BYM11-1000, RGL41A thru RGL41M
Document Number 88547
22-Sep-05
Vishay General Semiconductor
www.vishay.com
1
P
a
t
e
n
t
e
d
*
®
DO-213AB
*Glass-plastic encapsulation
is covered by
Patent No. 3,996,602,
brazed-lead assembly to
Patent No. 3
,
930
,
306
Surface Mount Glass Passivated Junction Fast
Switching Rectifier
Major Ratings and Characteristics
IF(AV) 1.0 A
VRRM 50 V to 1000 V
IFSM 30 A
trr 150 ns, 250 ns, 500 ns
VF1.3 V
Tj max. 175 °C
Features
• Superectifier structure for high reliability
condition
• Patented glass-plastic encapsulation technique
• Ideal for automated placement
• Fast switching for high efficiency
• Low leakage current
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Meets MSL level 1, per J-STD-020C
• Solder Dip 260 °C, 40 seconds
Typical Applications
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive and Telecommunication
Mechanical Data
Case: DO-213AB, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Two bands indicate cathode end - 1st band
denotes device type and 2nd band denotes repetitive
peak reverse voltage rating
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter Symbols BYM
11-50
BYM
11-100
BYM
11-200
BYM
11-400
BYM
11-600
BYM
11-800
BYM
11-1000
Units
Fast switching time device: 1st band is Red RGL
41A
RGL
41B
RGL
41D
RGL
41G
RGL
41J
RGL
41K
RGL
41M
Polarity color bands (2nd Band) Gray Red Orange Yellow Green Blue Violet
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward rectified current
at TT = 55 °C
IF(AV) 1.0 A
Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
IFSM 30 A
Maximum full load reverse current, full cycle
average at TA = 55 °C
IR(AV) 50 µA
Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C
www.vishay.com
2
Document Number 88547
22-Sep-05
BYM11-50 thru BYM11-1000, RGL41A thru RGL41M
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Notes:
(1) Thermal resistance from junction to ambient, 0.24 x 0.24" (6.0 x 6.0 mm) copper pads to each terminal
(2) Thermal resistance from junction to terminal, 0.24 x 0.24" (6.0 x 6.0 mm) copper pads to each terminal
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter Test condition Symbols BYM
11-50
BYM
11-100
BYM
11-200
BYM
11-400
BYM
11-600
BYM
11-800
BYM
11-1000
Units
Maximum
instantaneous
forward voltage
at 1.0 A VF 1.3 V
Maximum DC reverse
current at rated DC
blocking voltage
TA= 25 °C
TA= 125 °C
IR 5.0
50
µA
Maximum reverse
recovery time
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr 150 250 500 ns
Typical junction
capacitance
at 4.0 V, 1 MHz CJ 15 pF
Parameter Symbols BYM
11-50
BYM
11-100
BYM
11-200
BYM
11-400
BYM
11-600
BYM
11-800
BYM
11-1000
Units
Maximum thermal resistance RθJA
RθJT
75 (1)
30 (2)
°C/W
Figure 1. Forward Current Derating Curve
Average Forward Rectified Current (A)
25 50 75 100 125 150 175
0
0.25
0.5
0.75
1.0
1.25
Resistiveor
Inductive Load
Terminal Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
110 100
0
10
15
20
25
30
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
TJ = TJ max.
8.3 ms Single Half Sine-Wave
BYM11-50 thru BYM11-1000, RGL41A thru RGL41M
Document Number 88547
22-Sep-05
Vishay General Semiconductor
www.vishay.com
3
Package outline dimensions in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Characteristics
0.4 0.6 0.81.0 1.2 1.4 1.6
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
TJ = 25 °C
Pulse Width = 300 µs
1% Duty Cycle
020 40 60 80100
0.01
0.1
1
10
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
TJ = 100 °C
TJ = 25 °C
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
110 100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
0.01 0.1 110 100
0.1
1
10
100
Mounted on 0.20 x 0.27" (5 x 7mm)
Copper Pad Areas
t - Pulse Duration (sec.)
Transient Thermal Impedance (°C/W)
SOLDERABLE ENDS
1st BAND
0.022 (0.56)
0.018 (0.46)
0.205 (5.2)
0.185(4.7)
D1=
0.105
0.095
(2.67)
(2.41)
D2=D1
+0
- 0.008 (0.20)
1st band denotes type and positive end (cathode)
D2
0.022 (0.56)
0.018 (0.46)
DO-213AB
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
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for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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