May 2008
FDD8447L 40V N-Channel PowerTrench® MOSFET
©2008 Fairchild Semiconductor Corporation
FDD8447L Rev.C3
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1
FDD8447L
40V N-Channel PowerTrench® MOSFET
40V, 50A, 8.5mΩ
Features
Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A
Max rDS(on) = 11.0mΩ at VGS = 4.5V, ID = 11A
Fast Switching
RoHS Compliant
General Description
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized BVDSS capability to offer
superior performance benefit in the application.
Applications
Inverter
Power Supplies
G
S
D
TO-252
D-PAK
(TO-252)
D
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage 40 V
VGS Gate to Source Voltage ±20 V
ID
Drain Current -Continuous (Package limited) TC= 25°C 50
A
-Continuous (Silicon limited) TC= 25°C 57
-Continuous TA= 25°C (Note 1a) 15.2
-Pulsed 100
ISMax Pulse Diode Current 100 A
EAS Drain-Source Avalanche Energy (Note 3) 153 mJ
PD
Power Dissipation TC= 25°C 44
W TA= 25°C (Note 1a) 3.1
TA= 25°C (Note 1b) 1.3
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RθJC Thermal Resistance, Junction to Case 2.8
°C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 40
RθJA Thermal Resistance, Junction to Ambient (Note 1b) 96
Device Marking Device Package Reel Size Tape Width Quantity
FDD8447L FDD8447L D-PAK(TO-252) 13’’ 12mm 2500 units
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FDD8447L 40V N-Channel PowerTrench® MOSFET
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2
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 40 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250µA, referenced to 25°C 35 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 32V, VGS = 0V 1µA
IGSS Gate to Source Leakage Current VGS = ±20V, VGS = 0V ±100 nA
On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.0 1.9 3.0 V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = 250µA, referenced to 25°C -5 mV/°C
rDS(on) Static Drain to Source On Resistance
VGS = 10V, ID = 14A 7.0 8.5
mΩVGS = 4.5V, ID = 11A 8.5 11.0
VGS = 10V, ID = 14A, TJ=125°C 10.4 14.0
gFS Forward Transconductance VDS = 5V, ID = 14A 58 S
(Note 2)
Dynamic Characteristics
Ciss Input Capacitance VDS = 20V, VGS = 0V,
f = 1MHz
1970 pF
Coss Output Capacitance 250 pF
Crss Reverse Transfer Capacitance 150 pF
RgGate Resistance f = 1MHz 1.27 Ω
Switching Characteristics
td(on) Turn-On Delay Time
VDD = 20V, ID = 1A
VGS = 10V, RGEN = 6Ω
12 21 ns
trRise Time 12 21 ns
td(off) Turn-Off Delay Time 38 61 ns
tfFall Time 9 18 ns
Qg(TOT) Total Gate Charge, VGS = 10V
VDD = 20V, ID = 14A
VGS = 10V
37 52 nC
Qg(TOT) Total Gate Charge, VGS = 5V 20 28 nC
Qgs Gate to Source Gate Charge 6 nC
Qgd Gate to Drain “Miller” Charge 7 nC
Drain-Source Diode Characteristics
Notes:
1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting TJ = 25o
C, L = 1mH, IAS = 17.5A, VDD = 40V, VGS = 10V.
4
a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper
b. 96°C/W when mounted on a minimum pad.
----------------
ISMaximum Continuous Drain-Source Diode Forward Current (Note 1a) 2.6 A
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 14A (Note 2) 0.8 1.2 V
trr Reverse Recovery Time IF = 14A, di/dt = 100A/µs 22 ns
Qrr Reverse Recovery Charge 11 nC
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Typical Characteristics
0
20
40
60
80
100
00.511.522.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
3.5V
4.0V
V
GS
= 10V
3.0V
5.0V
4.5V
6.0V
0.6
1
1.4
1.8
2.2
2.6
3
0 20406080100
I
D
, DRAIN CURRENT (A)
NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 3.0V
6.0V
5.0V
4.5V
4.0V
3.5V
10.0V
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 14A
V
GS
= 10V
0.005
0.0075
0.01
0.0125
0.015
0.0175
0.02
246810
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 7A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
0
20
40
60
80
100
11.522.533.544.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
1000
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
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Typical Characteristics
0
2
4
6
8
10
0 10203040
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 14A V
DS
= 10V
20V
30V
0
500
1000
1500
2000
2500
3000
0 10203040
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 96
o
C/W
T
A
= 25
o
C
10ms
1ms
100µs
0
20
40
60
80
100
0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
θ
JA
= 96°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum
Power Dissipation
0
20
40
60
80
100
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
I(pk), PEAK TRANSIENT CURRENT (A)
SINGLE PULSE
R
θ
JA
= 96°C/W
T
A
= 25°C
1
10
100
0.1 1 10
t
AV
, TIME IN AVANCHE(ms)
I
(AS)
, AVALANCHE CURRENT (A)
T
J
= 25
o
C
Figure 11. Single Pulse Maximum Peak
Current
Figure 12. Unclamped Inductive Switching
Capability
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Typical Characteristics
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 96°C/W
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 13. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
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FDD8447L 40V P-Channel PowerTrench® MOSFET
Rev. I34
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subsidianries, and is not intended to be an exhaustive list of all such trademarks.
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP-SPM™
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world 1mW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SuperMOS™
®
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
®
tm
tm
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary First Production
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
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