BYW29E-200,127 - NXP Semiconductors

1. Product profile

1.1 General description

Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package.

1.2 Features and benefits

Fast switching

Guaranteed ESD capability

High thermal cyclin g pe rf or m anc e

Low on-state loss

Low thermal resistance

Rugged: reverse voltage surge

capability

Soft recovery minimizes

power-consuming oscillations

1.3 Applications

Output rectifiers in high-frequency

switched-mode power supplies

1.4 Quick reference data

BYW29E-200

Ultrafast power diode

Rev. 5 — 20 March 2012 Product data sheet

TO-220AC

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VRRM repetitive peak reverse

voltage - - 200 V

IF(AV) average forward current square-wave pulse; δ=0.5;

Tmb ≤128 °C; see Figure 1; see Figure 2 --8A

Static characteristics

VFforward voltage IF=8A; T

j= 150 °C; see Figure 4 - 0.8 0.895 V

Dynamic characteristics

trr reverse recovery time IF=1A; V

R=30V; dI

F/dt = 100 A/s;

Tj= 25 °C; ramp recovery; see Figure 5 ;

see Figure 7

- 2025ns

Electrostatic discharge

VESD electrostatic discharge

voltage HBM; C=250pF; R=1.5kΩ--8kV

Product data sheet Rev. 5 — 20 March 2012 2 of 11

NXP Semiconductors BYW29E-200

Ultrafast power diode

2. Pinning information

3. Ordering information

4. Limiting values

Tabl e 2. Pinning info rmation

Pin Symbol Description Simplified outline Graphi c sy m b o l

1 K cathode

SOD59 (TO-220AC)

2 A anode

mb mb mountin g ba se ; cathode

001aaa020

Table 3. Ordering information

Type number Package

Name Description Version

BYW29E-200 TO-220AC plastic single-ended package; heatsink mounted; 1 mounting

hole; 2-lead TO-220AC SOD59

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VRRM repetitive peak reverse voltage - 200 V

VRWM crest working reverse voltage - 200 V

VRreverse voltage - 200 V

IF(AV) average forward current square-wave pulse; δ=0.5; T

mb ≤128 °C;

see Figure 1; see Figure 2 -8A

IFRM repetitive peak forward current square-wave pulse ; δ= 0.5 ; tp= 25 µs;

Tmb ≤128 °C -16A

IFSM non-repetitive peak forward

current tp= 8.3 ms; sine-wave pulse; Tj(init) =25°C - 88 A

tp= 10 ms; sine-wave pulse; Tj(init) =25°C - 80 A

IRRM repetitive peak reverse current δ= 0.001 ; tp=2µs - 0.2 A

IRSM non-repetitive peak reverse

current tp= 100 µs - 0.2 A

Tstg storage temperature -40 150 °C

Tjjunction temperature - 150 °C

Electrostatic discharge

VESD electrostatic discharge voltage HBM; C = 250 pF; R = 1.5 k Ω-8kV

Product data sheet Rev. 5 — 20 March 2012 3 of 11

NXP Semiconductors BYW29E-200

Ultrafast power diode

Fig 1. Forward power dissipation as a function of

average forward current; square waveform;

maximum values

Fig 2. Forward power dissi pation as a function of

average forward current; sinusoidal waveform;

maximum values

003aaj507

IF(AV) (A)

01284

Ptot

(W)

δ = 1

0.5

0.2

0.1

IF(AV) (A)

08624

003aaj508

Ptot

(W)

a = 1.57

1.9

2.2

2.8

4.0

Product data sheet Rev. 5 — 20 March 2012 4 of 11

NXP Semiconductors BYW29E-200

Ultrafast power diode

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance from junction to mounting base see Figure 3 --2.7K/W

Rth(j-a) thermal resistance from junction to ambient in free air - 60 - K/W

Fig 3. Transient thermal impedance from junction to mounting base as a function of pulse width

003aaj513

10-1

10-2

Zth(j-mb)

(K/W)

10-3

tp (s)

10-6 1 1010-1

10-2

10-5 10-3

10-4

δ =

Product data sheet Rev. 5 — 20 March 2012 5 of 11

NXP Semiconductors BYW29E-200

Ultrafast power diode

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

VFforward voltage IF=8A; T

j=25°C; see Figure 4 - 0.92 1.05 V

IF=20A; T

j=25°C; see Figure 4 -1.11.3V

IF=8A; T

j= 150 °C; see Figure 4 - 0.8 0.895 V

IRreverse current VR= 200 V; Tj=25°C - 2 10 µA

VR= 200 V; Tj= 100 °C - 0.2 0.6 mA

Dynamic characteristics

Qrrecovered charge IF=2A; V

R=30V; dI

F/dt = 20 A/s;

Tj= 25 °C ; see Figure 5; see Figure 6 -411nC

trr reverse recovery time IF=1A; V

R=30V; dI

F/dt = 100 A/s;

ramp recovery; Tj=25°C; see Figure 5;

see Figure 7

- 2025ns

IF= 0.5 A; IR= 1 A; step recovery;

IR(meas) =0.25A; T

j=25°C; see Figure 8 - 1520ns

VFRM forward recovery voltage IF=1A; dI

F/dt = 10 A/s; Tj=25°C;

see Figure 9 -1-V

Fig 4. Forward current as a function of forward

voltage Fig 5. Reverse recovery de finitions; ramp recovery

VF (V)

021.50.5 1

003aaj509

(A)

(1) (2) (3)

003aac562

trr

time

100 %

25 %

IFdlF

IRIRM

Product data sheet Rev. 5 — 20 March 2012 6 of 11

NXP Semiconductors BYW29E-200

Ultrafast power diode

Fig 6. Recovered charge as a function of rate of

change of forward current; maximum values Fig 7. Reverse recovery time as a function of rate of

change of forward current; maximu m values

Fig 8. Re verse recovery definitions; step recovery Fig 9. Forward recovery definitio ns

003aaj510

102

103

(nC)

dIF/dt (A/μs)

110

(1)

(2)

(3)

(4)

003aaj511

102

103

trr

(ns)

dIF/dt (A/μs)

110

(1)

(2)

003aac563

trr

time

0.25 x IR

001aab912

time

FRM

Product data sheet Rev. 5 — 20 March 2012 7 of 11

NXP Semiconductors BYW29E-200

Ultrafast power diode

7. Package outline

Fig 10. Package outline SOD59 (TO-220AC)

References

Outline

version European

projection Issue date

IEC JEDEC JEITA

SOD59 2-lead TO-220AC

sod059_po

09-08-17

09-08-25

Unit

mm max

nom

min

4.7

4.3

1.40

1.15

1.7

1.3

0.65

0.45

15.8

15.6

6.8

6.4

5.08

(REF)

16.25

15.70

3.7

3.5

Dimensions

Note

1. Protruded dambar are included in the dimension.

Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC SOD59

A1b

0.95

0.70

b1(1) cDD

10.30

9.65

eHL

15.0

12.5

2.6

2.2

2.9

2.7

0 5 10 mm

scale

Product data sheet Rev. 5 — 20 March 2012 8 of 11

NXP Semiconductors BYW29E-200

Ultrafast power diode

8. Revision history

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BYW29E-200 v.5 20120320 Product data sheet - BYW29E_SERIES v.4

Modifications: •The format of this document has been redesigned to comply with the new identity guidelines of

NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate.

BYW29E_SERIES v.4 20010801 Product data sheet - BYW29E_SERIES v.3

Product data sheet Rev. 5 — 20 March 2012 9 of 11

NXP Semiconductors BYW29E-200

Ultrafast power diode

9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The p r oduct status of device(s) desc r ibed in this doc ument may have ch anged since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URLhttp://www.nxp.com.

9.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modificati ons or additions.

NXP Semiconductors does not give any representations or warranties as to

the accuracy or completeness of informati on included herein and shall have

no liability for the consequences of use of such info rmation.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract fr om a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

Product specificat io n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

9.3 Disclaimers

Limited warranty and liability — Information in this d ocument is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. NXP Se miconductors takes no

responsibility for the content in this document if provided by an inf ormation

source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability towards

customer for the products described herein shall be limited in accordance

with theTerms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersed es an d r eplaces all inf ormation supplied pri or

to the publication hereof.

Suitability for use — NXP Semiconductors product s are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconducto rs products in such equipment or

applications and ther efore such inclu sion and/or use is at the cu stomer’s own

risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability rela ted to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the applica tion or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Document status[1] [2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [shor t] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Pr oduction This document contains the product specification.

Product data sheet Rev. 5 — 20 March 2012 10 of 11

NXP Semiconductors BYW29E-200

Ultrafast power diode

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published athttp://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document ma y be interpret ed or

construed as an of fer to sell product s that is op en for accept ance or the grant ,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) d escribed herein may

be subject to export control regulat i ons. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automotive use. It i s neither qua lif ied nor test ed

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims resulting from customer design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

9.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G

reenChip,HiPerSmart,HITAG,I²C-bus

logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE

Ultralight,MoReUse,QLPAK,Silicon

Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia

andUCODE — are trademarks of NXP B.V.

HD Radio andHD Radio logo — are trademarks of iBiquity Digital

Corporation.

10. Contact information

For more information, please visit:http://www.nxp.com

For sales office addresses, please send an email to :salesaddresses@nxp.com

NXP Semiconductors BYW29E-200

Ultrafast power diode

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 20 March 2012

Document identifier: BYW29E-200

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .8

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . .9

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10

10 Contact information. . . . . . . . . . . . . . . . . . . . . .10