2011-10-051
BCM856S
1
623
54
PNP Silicon AF Transistor Array
• Precision matched transistor pair: ∆IC ≤ 10%
• For current mirror applications
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated Transistors
• Complementary type: BCM846S
• BC856S: For orientation in reel see
package information below
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
EHA07175
654
321
C1 B2 E2
C2B1E1
TR1 TR2
Type Marking Pin Configuration Package
BCM856S 3Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 65 V
Collector-emitter voltage VCES 80
Collector-base voltage VCBO 80
Emitter-base voltage VEBO 5
Collector current IC100 mA
Peak collector current, tp ≤ 10 ms ICM 200
Total power dissipation-
TS = 115 °C
Ptot 250 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
2011-10-052
BCM856S
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS 140 K/W
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 A
V(BR)CEO 65 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0 A
V(BR)CBO 80 - -
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0 A
V(BR)CES 80 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 A
V(BR)EBO 5 - -
Collector-base cutoff current
VCB = 30 V, IE = 0 A
VCB = 30 V, IE = 0 A, TA = 150 °C
ICBO
-
-
-
-
0.015
5
µA
DC current gain-2)
IC = 10 µA, VCE = 5 V
IC = 2 mA, VCE = 5 V
hFE
-
200
250
290
-
450
-
Collector-emitter saturation voltage2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
-
-
90
250
300
650
mV
Base emitter saturation voltage2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
-
-
700
850
-
-
Base-emitter voltage-2)
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VBE(ON)
600
-
650
-
750
820
Matching
IB = 1 µA, VCE1 = VCE2 = 1.0V
IB = 100 µA, VCE1 = VCE2 = 1.0V
∆IC
-10
-10
-
-
10
10
%
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2Puls test: t < 300µs; D < 2%
2011-10-053
BCM856S
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 100 MHz
fT- 250 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 3 - pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb - 8 -
Short-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz
h11e - 4.5 - kΩ
Open-circuit reverse voltage transf. ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
h12e - 2 - 10-4
Short-circuit forward current transf. ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
h21e - 330 - -
Open-circuit output admittance
IC = 2 mA, VCE = 5 V, f = 1 kHz
h22e - 30 - µS
Noise figure
IC = 200 µA, VCE = 5 V, f = 1 kHz,
∆ f = 200 Hz, RS = 2 kΩ
F- - 10 dB
2011-10-054
BCM856S
DC current gain hFE = ƒ(IC)
VCE = 5V
10 10 10 10
EHP00382
h
mA
-2 -1 12
FE
3
10
10
2
0
10
5
5
10
1
0
10
5
555
100
25
-50
C
Ι
C
C
C
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 20
10 0
EHP00380
VCEsat
10
mA
10
10
2
1
0
-1
5
5
V
0.3 0.5
100
25
-50
0.1 0.2 0.4
C
Ι
C
C
C
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 20
0
10
EHP00379
BEsat
V
0.6 V 1.2
-1
10
0
10
1
2
10
5
5
Ι
C
mA
0.2 0.4 0.8
C
25
C
100
C
-50
C
Output characteristics IC = ƒ(VCE),
IB = parameter
0 1 2 3 V5
VCE
0
1
2
3
4
5
6
7
8
9
10
11
12
mA
15
IC
IB = 4µA
IB = 8µA
IB = 12µA
IB = 16µA
IB = 20µA
IB = 24µA
IB = 28µA
IB =32µA
IB = 36µA
IB = 40µA
2011-10-055
BCM856S
Collector current IC = ƒ(VBE)
VCE = Parameter
0.2 0.3 0.4 0.5 0.6 0.7 0.8 V1
VBE
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
A
IC
1V
TA=25°C
1V
TA=-50°C
TA=100°C
5V 5V
1V
5V
Collector cutoff current ICBO = ƒ(TA)
VCBO = 30 V
10 0 50 100 150
EHP00381
TA
5
10
10
nA
10
Ι
CB0
5
5
5
10
10
4
3
2
1
0
-1
max
typ
C
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 2 GHz
10 10 10 10
EHP00378
f
mA
MHz
-1 0 1 2
5
T
3
10
10
2
1
10
5
5
5
C
Ι
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 4 8 12 16 V22
VCB(VEB)
0
1
2
3
4
5
6
7
8
9
10
pF
12
CCB(CEB)
CCB
CEB
2011-10-056
BCM856S
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
25
50
75
100
125
150
175
200
225
250
mW
300
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
2011-10-057
BCM856S
Definition of matching
∆IC = (IC2-IC1)/IC1
8 ? A 8 ? A
1 ? 1 ? 1 >
# "$
!
6 6
2011-10-058
BCM856S
Package SOT363
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
BCR108S
Type code
Pin 1 marking
Laser marking
0.3
0.70.9
0.65
0.65
1.6
0.2
4
2.15 1.1
8
2.3
Pin 1
marking
+0.1
0.2
1
6
23
5 4
±0.2
2
+0.1
-0.05
0.15
±0.1
1.25
0.1 MAX.
0.9 ±0.1
A
-0.05 6x
0.1 M
0.650.65
2.1
±0.1
0.1
0.1 MIN.
M
0.2 A
Pin 1
marking
2011-10-059
BCM856S
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
