1
IPDD60R190G7
Rev.2.0,2018-01-05Final Data Sheet
Pin 1 2345
6
7
8
9
10
PG-HDSOP-10-1
Drain
Pin 6-10
Gate
Pin 1
Power
Source
Pin 3,4,5
Driver
Source
Pin 2
MOSFET
600VCoolMOS™G7PowerTransistor
TheC7GOLDseries(G7)forthefirsttimebringstogetherthebenefitsof
theC7GOLDCoolMOS™technology,4pinKelvinSourcecapabilityand
theimprovedthermalpropertiesoftheDDPAKpackagetoenablea
possibleSMDsolutionforhighcurrenttopologiessuchasPFCupto3kW.
Features
•C7GoldgivesbestinclassFOMRDS(on)*EossandRDS(on)*Qg.
•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
•C7GoldtechnologyenablesbestinclassRDS(on)insmallestfootprint.
•DDPAKpackagehasinbuilt4thpinKelvinSourceconfigurationandlow
parasiticsourceinductance(~3nH).
•DDPAKpackageisMSL1compliant,totalPb-free,haseasyvisual
inspectionleadsandisqualifiedforindustrialapplicationsaccordingto
JEDEC47/20/22.
•DDPAKSMDpackagecombinedwithleadfreedieattachprocess
enablesimprovedthermalperformance(Rth).
Benefits
•C7GoldFOMRDS(on)*Qgis15%betterthanpreviousC7600Venabling
fasterswitchingleadingtohigherefficiency.
•PossibilitytoincreasseeconomiesofscalesbyusageinPFCandPWM
topologiesintheapplication.
•C7Goldcanreach50mΩinDDPAK115mm2footprint,whereasprevious
BICC7600Vwas40mΩin150mm2D2PAKfootprint.
•ReducingparasiticsourceinductancebyKelvinSourceimproves
efficiencybyfasterswitchingandeaseofuseduetolessringing.
•DDPAKpackageiseasytouseandhasthehighestqualitystandards.
•ImprovedthermalsenableSMDDDPAKpackagetobeusedinhigher
currentdesignsthanhasbeenpreviouslypossible.
Potentialapplications
PFCstagesandPWMstages(TTF,LLC)forhighpower/performance
SMPSe.g.Computing,Server,Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
VDS@Tj,max 650 V
RDS(on),max 190 mΩ
Qg,typ 18 nC
ID,pulse 36 A
ID,continuous @ Tj<150°C 19 A
Eoss@400V 2.17 µJ
Body diode di/dt 680 A/µs
Type/OrderingCode Package Marking RelatedLinks
IPDD60R190G7 PG-HDSOP-10 60R190G7 see Appendix A
2
600VCoolMOS™G7PowerTransistor
IPDD60R190G7
Rev.2.0,2018-01-05Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3
600VCoolMOS™G7PowerTransistor
IPDD60R190G7
Rev.2.0,2018-01-05Final Data Sheet
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID-
-
-
-
13
8ATC=25°C
TC=100°C
Pulsed drain current2) ID,pulse - - 36 A TC=25°C
Avalanche energy, single pulse EAS - - 42 mJ ID=2.8A; VDD=50V; see table 10
Avalanche energy, repetitive EAR - - 0.21 mJ ID=2.8A; VDD=50V; see table 10
Avalanche current, single pulse IAS - - 2.8 A -
MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation Ptot - - 76 W TC=25°C
Storage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj-55 - 150 °C -
Mounting torque - - - n.a. Ncm -
Continuous diode forward current IS- - 13 A TC=25°C
Diode pulse current2) IS,pulse - - 36 A TC=25°C
Reverse diode dv/dt3) dv/dt - - 25 V/ns VDS=0...400V,ISD<=4.3A,Tj=25°C
see table 8
Maximum diode commutation speed dif/dt - - 680 A/µsVDS=0...400V,ISD<=4.3A,Tj=25°C
see table 8
Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min
1) Limited by Tj,max
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch
4
600VCoolMOS™G7PowerTransistor
IPDD60R190G7
Rev.2.0,2018-01-05Final Data Sheet
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 1.65 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint
Thermal resistance, junction - ambient
for SMD version RthJA - 35 45 °C/W
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
layer, 70µm thickness) copper area
for drain connection and cooling.
PCB is vertical without air stream
cooling.
Reflow soldering temperature Tsold - - 260 °C reflow MSL1
5
600VCoolMOS™G7PowerTransistor
IPDD60R190G7
Rev.2.0,2018-01-05Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=0.21mA
Zero gate voltage drain current IDSS -
-
-
10
1
-µAVDS=600V,VGS=0V,Tj=25°C
VDS=600V,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
0.164
0.409
0.190
-ΩVGS=10V,ID=4.2A,Tj=25°C
VGS=10V,ID=4.2A,Tj=150°C
Gate resistance RG- 0.9 - Ωf=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 718 - pF VGS=0V,VDS=400V,f=250kHz
Output capacitance Coss - 15 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
related1) Co(er) - 27 - pF VGS=0V,VDS=0...400V
Effective output capacitance, time
related2) Co(tr) - 277 - pF ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time td(on) - 16 - ns VDD=400V,VGS=13V,ID=4.2A,
RG=10Ω;seetable9
Rise time tr- 5 - ns VDD=400V,VGS=13V,ID=4.2A,
RG=10Ω;seetable9
Turn-off delay time td(off) - 52 - ns VDD=400V,VGS=13V,ID=4.2A,
RG=10Ω;seetable9
Fall time tf- 6.5 - ns VDD=400V,VGS=13V,ID=4.2A,
RG=10Ω;seetable9
Table6Gatechargecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 4 - nC VDD=400V,ID=4.2A,VGS=0to10V
Gate to drain charge Qgd - 7 - nC VDD=400V,ID=4.2A,VGS=0to10V
Gate charge total Qg- 18 - nC VDD=400V,ID=4.2A,VGS=0to10V
Gate plateau voltage Vplateau - 5.0 - V VDD=400V,ID=4.2A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
6
600VCoolMOS™G7PowerTransistor
IPDD60R190G7
Rev.2.0,2018-01-05Final Data Sheet
Table7Reversediodecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 0.8 - V VGS=0V,IF=4.2A,Tj=25°C
Reverse recovery time trr - 235 - ns VR=400V,IF=4.2A,diF/dt=100A/µs;
see table 8
Reverse recovery charge Qrr - 2 - µC VR=400V,IF=4.2A,diF/dt=100A/µs;
see table 8
Peak reverse recovery current Irrm - 18 - A VR=400V,IF=4.2A,diF/dt=100A/µs;
see table 8
7
600VCoolMOS™G7PowerTransistor
IPDD60R190G7
Rev.2.0,2018-01-05Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 25 50 75 100 125 150
0
10
20
30
40
50
60
70
80
Ptot=f(TC)
Diagram2:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-3
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-3
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-5 10-4 10-3 10-2 10-1
10-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
8
600VCoolMOS™G7PowerTransistor
IPDD60R190G7
Rev.2.0,2018-01-05Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
10
20
30
40
50
60
70
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
5
10
15
20
25
30 20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on)[Ω]
0 10 20 30
0.40
0.42
0.44
0.46
0.48
0.50
0.52
0.54
0.56
0.58
0.60
20 V
5.5 V 6 V 6.5 V 7 V 10 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram8:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[Ω]
-50 -25 0 25 50 75 100 125 150
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0.22
0.24
0.26
0.28
0.30
0.32
0.34
0.36
0.38
0.40
0.42
0.44
0.46
98%
typ
RDS(on)=f(Tj);ID=4.2A;VGS=10V
9
600VCoolMOS™G7PowerTransistor
IPDD60R190G7
Rev.2.0,2018-01-05Final Data Sheet
Diagram9:Typ.transfercharacteristics
VGS[V]
ID[A]
0 2 4 6 8 10 12
0
10
20
30
40
50
60
150 °C
25 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram10:Typ.gatecharge
Qgate[nC]
VGS[V]
0 5 10 15 20 25
0
2
4
6
8
10
12
400 V120 V
VGS=f(Qgate);ID=4.2Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.5 1.0 1.5
10-1
100
101
102
125 °C 25 °C
IF=f(VSD);parameter:Tj
Diagram12:Avalancheenergy
Tj[°C]
EAS[mJ]
25 50 75 100 125 150
0
5
10
15
20
25
30
35
40
45
EAS=f(Tj);ID=2.8A;VDD=50V
10
600VCoolMOS™G7PowerTransistor
IPDD60R190G7
Rev.2.0,2018-01-05Final Data Sheet
Diagram13:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-60 -20 20 60 100 140 180
540
560
580
600
620
640
660
680
700
VBR(DSS)=f(Tj);ID=1mA
Diagram14:Typ.capacitances
VDS[V]
C[pF]
0 100 200 300 400 500
10-1
100
101
102
103
104
105
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=250kHz
Diagram15:Typ.Cossstoredenergy
VDS[V]
Eoss[µJ]
0 100 200 300 400 500
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Eoss=f(VDS)
11
600VCoolMOS™G7PowerTransistor
IPDD60R190G7
Rev.2.0,2018-01-05Final Data Sheet
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform
VDS
IF
Rg1
Rg 2
Rg1 = Rg 2
Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)
tr
ton
tf
toff
10%
90%
VDS
VGS
Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
ID
VDS
VDS
ID
12
600VCoolMOS™G7PowerTransistor
IPDD60R190G7
Rev.2.0,2018-01-05Final Data Sheet
6PackageOutlines
PG-HDSOP-10-1
MILLIMETERS
1.14
D
N
H
E1
e
E
D1
1.20
10.50
20.81
6.40
5.20
15.20
10
b2
A
DIMENSIONS
b
c
A2
A1
0.57
MIN.
2.20
0.89
0.46
0.57
0.00
1.40
5.50
10.70
15.60
6.60
21.11
0.93
MAX.
2.35
0.15
0.63
0.58
1.10
L
1
SCALE
Z8B00184263
REVISION
ISSUE DATE
EUROPEAN PROJECTION
01
06.02.2017
05mm
DOCUMENT NO.
5:1
2 3 4
Figure 1 Outline PG-HDSOP-10, dimensions in mm/inches
13
600V CoolMOS™ G7 Power Transistor
IPDD60R190G7
Rev. 2.0, 2018-01-05Final Data Sheet
7 Appendix A
Table 11 Related Links
•IFX CoolMOSTM G7 Webpage: www.infineon.com
•IFX CoolMOSTM G7 application note: www.infineon.com
•IFX CoolMOSTM G7 simulation model: www.infineon.com
•IFX Design tools: www.infineon.com
14
600V CoolMOS™ G7 Power Transistor
IPDD60R190G7
Rev. 2.0, 2018-01-05Final Data Sheet
Revision History
IPDD60R190G7
Revision: 2018-01-05, Rev. 2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2018-01-05 Release of final version
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CoolGaN™, CoolMOS™, CoolSET™, CoolSiC™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, DrBlade™,
EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, Infineon™,
ISOFACE™, IsoPACK™, i-Wafer™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OPTIGA™, OptiMOS™, ORIGA™, POWERCODE™,
PRIMARION™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, ReverSave™, SatRIC™, SIEGET™, SIPMOS™, SmartLEWIS™,
SOLID FLASH™, SPOC™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
Trademarks updated August 2015
Other Trademarks
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