AH312 2 Watt, High Linearity InGaP HBT Amplifier Product Features Product Description 400 - 2300 MHz The AH312 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowbandtuned application circuits with up to +49 dBm OIP3 and +33 dBm of compressed 1dB power. It is housed in a leadfree/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested. +33 dBm P1dB +51 dBm Output IP3 18 dB Gain @ 900 MHz +5V Single Positive Supply MTTF > 100 Years Lead-free/RoHS-compliant SOIC-8 SMT Pkg. Applications Final stage amplifiers for Repeaters Mobile Infrastructure The AH312 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. An internal active bias allows the AH312 to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations. Specifications (1) Parameter Operational Bandwidth Test Frequency Gain Input R.L. Output R.L. Output P1dB Output IP3 (2) wCDMA Channel Power @ -45 dBc ACLR, 2140 MHz Noise Figure Operating Current Range, Icc (3) Device Voltage, Vcc Functional Diagram 1 8 2 7 3 6 4 5 Function Vref Input Output Vbias GND N/C or GND Pin No. 1 3 6, 7 8 Backside Paddle 2, 4, 5 Typical Performance (4) Units Min MHz MHz dB dB dB dBm dBm Typ 400 9 +32 +47 Max Parameter 2300 Frequency S21 - Gain S11 - Input R.L. S22 - Output R.L. Output P1dB Output IP3 IS-95A Channel Power 2140 10 20 6.8 +33.2 +48 Units @ -45 dBc ACPR dBm +25.3 dB mA V 7.7 800 +5 700 wCDMA Channel Power @ -45 dBc ACLR 900 1. Test conditions unless otherwise noted: 25C, +5V Vsupply, 2140 MHz, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +17 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 200 mA at P1dB. Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 22mA of current when used with a series bias resistor of R1=15. (ie. total device current typically will be 822 mA.) Noise Figure Device Bias (3) Typical MHz dB dB dB dBm dBm 900 18 -18 -11 +33 +49 1960 11 -19 -6.8 +33.4 +51 dBm +27 +27.5 dBm dB 2140 10 -20 -6.8 +33.2 +48 +25.3 8.0 7.3 7.7 +5 V @ 800 mA 4. Typical parameters reflect performance in a tuned application circuit at +25 C. Not Recommended for New Designs Recommended Replacement Part: TQP7M9104 Absolute Maximum Rating Parameter Rating Thermal Resistance, Rth Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Junction Temperature 17.5C/W -65 to +150 C +28 dBm +8 V 1400 mA 8W +200 C Ordering Information Part No. Description AH312-S8G 2 Watt, High Linearity InGaP HBT Amplifier (lead-free/RoHS-compliant SOIC-8 Pkg) Standard tape / reel size = 500 pieces on a 7" reel Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice. TriQuint Semiconductor Inc Phone 1-503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 1 of 7 May 2012 AH312 2 Watt, High Linearity InGaP HBT Amplifier Typical Device Data S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25 C, calibrated to device leads) 0. 4 30 0.8 2. 0 6 0. 0 3. 0 3. 0 4. 0 4. 25 5.0 0.2 20 5.0 0.2 10.0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0 0.2 15 0.4 10.0 10 5 -10.0 -10.0 -4 .0 -5. 0 -3 .0 S[1,1] .0 -2 Swp Min 0.05GHz -1.0 S[1,1] * Swp Min 0.05GHz -0.8 2.5 -0 .6 2 .4 -0 .0 -2 1 1.5 Frequency (GHz) -0.8 0.5 -1.0 0 -0 .6 .4 -0 -10 2 -0. -3 .0 2 -0. 0 -5 -4 .0 -5. 0 Gain (dB) Swp Max 3GHz 2. 0 DB(GMax) 1.0 1.0 0.8 6 0. Swp Max 3GHz 0. 4 DB(|S[2,1]|) 35 S22 S11 Gain / Maximum Stable Gain 40 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance plots are shown from 50 - 3000 MHz, with markers placed at 0.5 - 3.0 GHz in 0.5 GHz increments. S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -0.86 -0.64 -0.68 -0.76 -0.93 -1.15 -1.50 -2.39 -4.47 -11.96 -8.66 -2.76 -1.21 -0.68 -0.43 -0.32 -0.29 -178.06 178.18 172.85 164.33 155.56 146.04 134.58 121.66 104.01 86.06 -179.11 159.91 142.90 130.93 121.91 114.61 108.16 27.55 22.16 16.13 10.61 7.46 5.78 4.87 4.74 5.33 5.96 4.41 0.53 -3.21 -7.27 -10.41 -13.28 -15.94 113.72 98.81 89.06 77.31 67.94 57.62 46.90 32.96 14.01 -17.55 -56.78 -89.86 -107.99 -123.14 -134.93 -143.22 -149.93 -45.75 -45.46 -42.65 -43.96 -41.17 -41.65 -40.36 -40.22 -38.97 -38.96 -39.35 -43.55 -41.56 -42.46 -39.71 -40.99 -39.65 30.91 12.80 6.09 4.69 6.70 -5.78 -7.84 -16.51 -48.82 -86.32 -144.53 145.94 104.25 73.64 64.28 58.20 48.40 -0.38 -0.38 -0.48 -0.48 -0.61 -0.66 -0.71 -0.80 -0.76 -0.60 -0.52 -0.41 -0.54 -0.68 -0.73 -0.73 -0.79 -130.98 -157.30 -172.51 177.51 173.63 170.49 169.31 168.22 167.91 170.63 167.41 164.50 160.11 157.84 154.66 151.14 147.52 Device S-parameters are available for download off of the website at: www.TriQuint.com Application Circuit PC Board Layout Circuit Board Material: .014" Getek, single layer, 1 oz copper, Microstrip line details: width = .026", spacing = .026" The silk screen markers A, B, C, etc. and 1, 2, 3, etc. are used as placemarkers for the input and output tuning shunt capacitors - C8 and C9. The markers and vias are spaced in .050" increments. Specifications and information are subject to change without notice. TriQuint Semiconductor Inc Phone 1-503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 2 of 7 May 2012 S[2,2] * S[2,2] AH312 2 Watt, High Linearity InGaP HBT Amplifier 900 MHz Application Circuit (AH312-S8PCB900) Typical RF Performance at 25 C Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3 900 MHz 18 dB -18 dB -11 dB +33 dBm +49 dBm (+17 dBm / tone, 1 MHz spacing) Channel Power (@-45 dBc ACPR, IS-95 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current (1) +27 dBm 8.0 dB +5 V 800 mA 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. S11 vs. Frequency 0 19 -5 +25C 17 +25C -10 -15 -20 -40C 860 880 900 920 -30 840 940 +25C 860 8 34 6 4 2 860 880 900 940 880 920 940 920 -40 30 -40C +25C -50 -60 +85C -40 C +25 C 860 880 900 920 22 940 23 24 25 26 27 OIP3 vs. Temperature OIP3 vs. Output Power +25 C, +17 dBm/tone freq. = 900 MHz, 901 MHz, +17 dBm/tone freq. = 900 MHz, 901 MHz, +25 C 55 50 OIP3 (dBm) OIP3 (dBm) 40 45 40 920 940 29 24 26 50 45 40 35 880 900 Frequency (MHz) 28 Output Channel Power (dBm) OIP3 vs. Frequency 45 +85 C -70 Frequency (MHz) 55 940 ACPR vs. Channel Power 32 26 840 900 Frequency (MHz) IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW, 900 MHz +85C 50 860 860 +85C P1dB vs. Frequency Frequency (MHz) 55 920 -40C Circuit boards are optimized at 880 MHz 28 +25C 900 ACPR (dBc) 36 P1dB (dBm) NF (dB) 10 -40C 880 -20 840 Frequency (MHz) Noise Figure vs. Frequency OIP3 (dBm) -10 -25 +85C Frequency (MHz) 35 840 +85C -15 16 0 840 -40C S22 (dB) 18 15 840 S22 vs. Frequency 0 -5 S11 (dB) S21 (dB) S21 vs. Frequency 20 35 -40 -15 10 35 Temperature (C) 60 85 12 14 16 18 20 22 Output Power (dBm) Specifications and information are subject to change without notice. TriQuint Semiconductor Inc Phone 1-503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 3 of 7 May 2012 AH312 2 Watt, High Linearity InGaP HBT Amplifier 1960 MHz Application Circuit (AH312-S8PCB1960) Typical RF Performance at 25 C Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3 1960 MHz 11 dB -20 dB -6.8 dB +33.4 dBm +51 dBm (+17 dBm / tone, 1 MHz spacing) Channel Power +27.5 dBm (@-45 dBc ACPR, IS-95 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current (1) 7.3 dB +5 V 800 mA 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. S11 vs. Frequency 0 12 -5 +25C 10 +25C -10 -15 -20 1940 -40C 1950 +85C 1960 1970 1980 -30 1930 1990 +25C 1940 8 34 6 4 2 1940 1950 1960 1970 1980 1990 1980 1990 1960 1970 -35 -40C +25C -45 -55 -65 +85C -40 C +25 C 1940 1950 1960 1970 1980 22 1990 23 24 25 26 27 OIP3 vs. Temperature OIP3 vs. Output Power +25 C, +17 dBm/tone freq. = 1960 MHz, 1961 MHz, +17 dBm/tone freq. = 1960 MHz, 1961 MHz, +25 C 50 OIP3 (dBm) OIP3 (dBm) 55 45 40 1980 1990 29 50 45 40 35 1950 1960 1970 Frequency (MHz) 28 Output Channel Power (dBm) OIP3 vs. Frequency 40 +85 C -75 Frequency (MHz) 45 1990 ACPR vs. Channel Power 30 55 1980 Frequency (MHz) 32 26 1930 1950 IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW, 1960 MHz +85C 50 1940 1940 +85C P1dB vs. Frequency Frequency (MHz) 55 1970 -40C Circuit boards are optimized at 1960 MHz 28 +25C 1960 ACPR (dBc) 36 P1dB (dBm) NF (dB) 10 -40C 1950 -20 1930 Frequency (MHz) Noise Figure vs. Frequency OIP3 (dBm) -10 -25 Frequency (MHz) 35 1930 +85C -15 9 0 1930 -40C S22 (dB) 11 8 1930 S22 vs. Frequency 0 -5 S11 (dB) S21 (dB) S21 vs. Frequency 13 35 -40 -15 10 35 Temperature (C) 60 85 12 14 16 18 Output Power (dBm) 20 22 Specifications and information are subject to change without notice. TriQuint Semiconductor Inc Phone 1-503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 4 of 7 May 2012 AH312 2 Watt, High Linearity InGaP HBT Amplifier 2140 MHz Application Circuit (AH312-S8PCB2140) Typical RF Performance at 25 C Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3 2140 MHz 10 dB -20 dB -6.8 dB +33.2 dBm +48 dBm (+17 dBm / tone, 1 MHz spacing) wCDMA Channel Power +25.3 dBm (@-45 dBc ACLR, 3GPP, TM 1+64 DPCH) Noise Figure Device / Supply Voltage Quiescent Current (1) 7.7 dB +5 V 800 mA 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. S11 vs. Frequency 0 11 -5 +25C 9 +25C -10 -15 -20 2120 -40C 2130 +85C 2140 2150 2160 -30 2110 2170 +25C 2120 34 6 4 2 2130 2140 2150 2170 2130 2160 2170 2150 -40C +25C -45 -50 -55 +85C -40 C +25 C 2120 2130 2140 2150 2160 22 2170 23 24 25 26 OIP3 vs. Temperature OIP3 vs. Output Power freq. = 2140 MHz, 2141 MHz, +17 dBm/tone freq. = 2140 MHz, 2141 MHz, +25 C 50 OIP3 (dBm) OIP3 (dBm) 55 45 40 2160 2170 50 45 40 35 2130 2140 2150 Frequency (MHz) 27 Output Channel Power (dBm) +25 C, +17 dBm/tone 40 +85 C -60 OIP3 vs. Frequency 45 2170 ACPR vs. Channel Power Frequency (MHz) 55 2160 3GPP W-CDMA, Test Model 1+64 DPCH, 5 MHz offset, 2140 MHz -35 30 26 2110 2140 +85C Frequency (MHz) 32 +85C 50 2120 2120 -40C -40 Frequency (MHz) 55 2160 Circuit boards are optimized at 2140 MHz 28 2120 2150 ACPR (dBc) 8 P1dB (dBm) NF (dB) 36 +25C 2140 P1dB vs. Frequency 10 -40C 2130 -20 2110 Frequency (MHz) Noise Figure vs. Frequency OIP3 (dBm) -10 -25 Frequency (MHz) 35 2110 +85C -15 8 0 2110 -40C S22 (dB) 10 7 2110 S22 vs. Frequency 0 -5 S11 (dB) S21 (dB) S21 vs. Frequency 12 35 -40 -15 10 35 Temperature (C) 60 85 12 14 16 18 Output Power (dBm) 20 22 Specifications and information are subject to change without notice. TriQuint Semiconductor Inc Phone 1-503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 5 of 7 May 2012 AH312 2 Watt, High Linearity InGaP HBT Amplifier Application Note: Reduced Bias Configurations The AH312 can be configured to be operated with lower bias current by varying the bias-adjust resistor - R1. The recommended circuit configurations shown previously in this datasheet have the device operating in Class A operation. Lowering the current has little effect on the gain, OIP3, and P1dB performance of the device, but will slightly lower the ACLR/ACPR performance of the device as shown below. An example of the measured data below represents the AH312 measured and configured for 2.14 GHz applications. It is expected that variation of the bias current for other frequency applications will produce similar performance results. AH312-S8PCB2140 Performance Data R1 (ohms) 15 22 43 62 110 Icq (mA) 800 700 600 500 400 Pdiss (W) 4.0 3.5 3.0 2.5 2.0 P1dB (dBm) +33.3 +33.3 +33.1 +33.0 +32.9 OIP3 (dBm) +51.4 +50.9 +50.9 +50.7 +47.3 2.14GHz Gain vs. Output Power 2.14GHz OIP3 vs. Output Power per Tone 10.2 55 9.8 OIP3 (dBm) Gain (dB) 50 9.4 Idq=800mA 'Class A' 9 Idq=700mA Idq=600mA 8.6 45 Idq=800mA 'Class A' Idq=700mA Idq=600mA 40 Idq=500mA Idq=500mA Idq=400mA 8.2 Idq=400mA 35 18 20 22 24 26 28 30 32 34 10 12 Output Power (dBm) W-CDMA ACLR vs. Output Channel Power 16 18 20 22 24 30 32 CW PAE vs. Output Power 100 3GPP W-CDMA, Test Model 1 + 64 DPCH, 5 MHz offset Idq=800mA 'Class A' -35 Idq=800mA 'Class A' Idq=700mA Idq=700mA -40 Idq=600mA -45 PAE (%) Idq=600mA ACLR (dBc) 14 Power Out per Tone (dBm) Idq=500mA Idq=400mA -50 Idq=500mA Idq=400mA 10 -55 -60 1 -65 14 16 18 20 22 24 W-CDMA Channel Power Out (dBm) 26 18 20 22 24 26 28 CW Tone Power Out (dBm) Specifications and information are subject to change without notice. TriQuint Semiconductor Inc Phone 1-503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 6 of 7 May 2012 AH312 2 Watt, High Linearity InGaP HBT Amplifier AH312-S8G (Lead-Free Package) Mechanical Information This package is lead-free/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260C reflow temperature) and lead (maximum 245 C reflow temperature) soldering processes. Outline Drawing Product Marking The component will be marked with an "AH312G" designator with an alphanumeric lot code on the top surface of the package. ESD / MSL Information ESD Rating: Value: Test: Standard: Class 1B Passes between 500 and 1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Level 2 at +260 C convection reflows Standard: JEDEC Standard J-STD-020 Mounting Config. Notes Mounting Configuration / Land Pattern 1. A heatsink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. All dimensions are in millimeters (inches). Angles are in degrees. Specifications and information are subject to change without notice. TriQuint Semiconductor Inc Phone 1-503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 7 of 7 May 2012