Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 60 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 5.0 V
ICCollector Current - Continuous 800 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA. Sourced
from Process 63.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
PZT2907A
BC
C
SOT-223
E
PN2907A
CBETO-92
MMBT2907A
C
B
E
SOT-23
Mark: 2F
1998 Fairchild Semiconductor Corporation
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
PN2907A *MMBT2907A **PZT2907A
PDTotal Device Dissipation
Derate above 25°C625
5.0 350
2.8 1,000
8.0 mW
mW/°C
RθJC Thermal Resistance, Junct i on to Case 83.3 °C/W
RθJA Thermal Resistance, Junct i on to Ambient 200 357 125 °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
PN2907A / MMBT2907A / PZT2907A
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Ba ndwidth Product IC = 50 mA, VCE = 20 V,
f = 100 MHz 200 MHz
Cobo Output Ca pacita nce VCB = 10 V, IE = 0,
f = 100 kHz 8.0 pF
Cibo Input Capacitance VEB = 2.0 V, IC = 0,
f = 100 kHz 30 pF
SWITCHING CHARACTERISTICS
ton Turn-on Tim e VCC = 30 V, IC = 150 mA, 45 ns
tdDelay Time IB1 = 15 mA 10 ns
trRise Time 40 ns
toff Turn-off Time VCC = 6.0 V, IC = 150 mA 100 ns
tsStorage Time IB1 = IB2 = 15 mA 80 ns
tfFa ll Time 30 ns
Symbol Parameter Test Conditions Min Max Units
V(BR)CEO Col lector-Emitter Bre akdown Voltage* IC = 10 mA, IB = 060V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10
µ
A, IE = 0 60 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10
µ
A, IC = 0 5.0 V
IBBase Cut off Current VCB = 30 V, VEB = 0.5 V 50 nA
ICEX Collector Cutoff Current VCE = 30 V, VBE = 0.5 V 50 nA
ICBO Collector Cutoff Current VCB = 50 V, IE = 0
VCB = 50 V, IE = 0, TA = 150°C0.02
20
µ
A
µ
A
hFE DC Current Gain IC = 0.1 mA, VCE = 10 V
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V*
IC = 500 mA, VCE = 10 V*
75
100
100
100
50 300
VCE(sat)Collector-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA 0.4
1.6 V
V
VBE(sat)Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA*
IC = 500 mA, IB = 50 mA 1.3
2.6 V
V
PNP General Purpose Amplifier
(continued)
PN2907A / MMBT2907A / PZT2907A
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Spice Model
PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2
Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 T r=1 1 1.3n Tf=603.7p
Itf=.65 Vtf=5 Xtf=1.7 Rb=10)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
0.1 0.3 1 3 10 30 100 300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 4 0 ° C
V = 5V
CE
Input and Output Capacitance
vs Reverse Bias V oltage
0.1 1 10 50
0
4
8
12
16
20
REVERSE BIAS VOL TAGE (V)
CAP ACIT ANCE (pF)
Cob
C
ib
C o llector -C u toff Cu r rent
vs A mb ient Temp er ature
25 50 75 100 125
0.01
0.1
1
10
100
T - AM BIE NT TE MP E RATURE ( C)
I - C OLLECTOR CURR EN T (nA)
A
CBO
°
V = 35V
CB
C o ll ecto r -Emitter Satur ati o n
Vo ltage vs C o ll ector Current
110100500
0
0.1
0.2
0.3
0.4
0.5
I - C OLLEC TOR C UR RENT (mA)
V - COLLECTOR EMI TTER VOLTAGE (V)
C
CESAT
β= 10
25 °C
- 40 °C
125 °C
B ase-Emitter Satur ati on
Vo ltag e vs C o ll ec tor Current
110100500
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CUR RENT (mA)
V - BA SE EMITTER VOLTA GE (V)
C
BESAT
25 °C
- 40 °C
125 °C
β= 10
Base Emitter ON Vol tage vs
C o llector Cur rent
0.1 1 10 25
0
0.2
0.4
0.6
0.8
1
I - COLLEC TOR CURRE NT (mA)
V - BASE EMITTER ON VOLTA GE (V)
C
BE( ON)
V = 5V
CE
25 °C
- 40 °C
125 °C
PN2907A / MMBT2907A / PZT2907A
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
S wit c hing Tim es
vs Collector Current
10 100 1000
0
50
100
150
200
250
I - COLL ECTOR CURR ENT (mA )
TIME ( nS)
I = I =
tr
t
s
B1
C
B2 Ic
10
V = 15 V
cc
tf
td
Tu r n On and Turn Of f Tim es
vs Col lecto r C urr ent
10 100 1000
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
ton
t
off
B1
C
B2 Ic
10
V = 15 V
cc
Po we r Dissipation vs
Am bient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMP ERATURE ( C)
P - PO WER DISSI PATION (W)
D
o
SOT-223
TO-92
SOT-23
Ri se Time vs Coll ect or
and Turn On Base Currents
10 100 500
1
2
5
10
20
50
I - COLLECTOR CURRENT (mA)
I - TURN 0N BASE CURR ENT (mA)
30 ns
C
t = 15 V
r
B1
60 ns
PN2907A / MMBT2907A / PZT2907A
PNP General Purpose Amplifier
(continued)
Typical Common Emitter Characteristics (f = 1.0kHz)
Common Emitte r Characteri st ics
12 51020 50
0.1
0.2
0.5
1
2
5
I - CO LL ECT O R CURRENT (mA)
CHAR. RELAT IVE TO VAL UES AT I = -10 mA
V = -10 V
CE
C
C
T = 25 C
A o
hoe
h re
hfe
hie
_ _ _ _ _ _
Commo n Emitte r Charact eri stics
-20-16-12-8-4
0.8
0.9
1
1.1
1.2
1.3
V - CO LLECTOR VOLT AGE ( V)
CHAR. RELATIVE TO VALUES AT V = -10V
I = -1 0 m A
C
CE
CE
T = 25 C
A o
hoe
h and h
re
hfe
hie
oe hfe
hie
h re
Commo n Emitter Characte ri st ics
-40-200 20406080100
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
T - AM BIENT TEMP ERATURE ( C)
CHAR. RE LATIVE TO VA LUES AT T = 25 C
V = -10 V
CE
A
A
hoe
h re
hfe
hie
o
o
I = -10 mA
C hfe
hie
h re
hoe
PN2907A / MMBT2907A / PZT2907A
PNP General Purpose Amplifier
(continued)
PN2907A / MMBT2907A / PZT2907A
PNP General Purpose Amplifier
(continued)
Test Circuits
FIGURE 1: Saturated Turn-On Switching Time Test Circuit
FIGURE 2: Saturated T urn-Off Switching T ime T est Circuit
1.0 KΩΩ
ΩΩ
Ω
- 6.0 V
1.5 V
1.0 KΩΩ
ΩΩ
Ω
- 30 V
0
≤≤
≤≤
≤ 200ns
≤≤
≤≤
≤ 200ns
- 16 V
0
50 ΩΩ
ΩΩ
Ω
200 ΩΩ
ΩΩ
Ω
1 KΩΩ
ΩΩ
Ω37 ΩΩ
ΩΩ
Ω
50 ΩΩ
ΩΩ
Ω
- 30 V
NOTE: BVEBO = 5.0 V
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not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF F AIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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