Advance Technical Information IXFR15N100Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS(on) trr (Electrically Isolated Tab) = = 1000V 10A 1.2 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 10 A IDM TC = 25C, Pulse Width Limited by TJM 45 A IA EAS TC = 25C TC = 25C 7.5 1.0 A J dv/dt IS IDM, VDD VDSS, TJ 150C 50 V/ns PD TC = 25C 400 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C 2500 V 20..120/4.5..27 N/lb. 5 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force Weight G D Isolated Tab S G = Gate S = Source D = Drain Features z z z z z z z Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface Low Intrinsic Gate Resistance 2500V~ Electrical Isolation Fast Intrinsic Rectifier Avalanche Rated Low Package Inductance Advantages z z z Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 1000 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) V 6.5 V 100 nA TJ = 125C VGS = 10V, ID = 7.5A, Note 1 (c) 2011 IXYS CORPORATION, All Rights Reserved 25 A 1.5 mA 1.2 High Power Density Easy to Mount Space Savings Applications z z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls DS100354(06/11) IXFR15N100Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 7.5 VDS = 20V, ID = 7.5A, Note 1 Ciss Coss 12.5 S 3250 pF 265 pF 24 pF 0.20 28 ns VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 * VDSS, ID = 7.5A RG = 2 (External) Qg(on) Qgs ISOPLUS247 (IXFR) Outline VGS = 10V, VDS = 0.5 * VDSS, ID = 7.5A Qgd 10 ns 30 ns 8 ns 64 nC 23 nC 27 nC 1 = Gate 2,4 = Drain 3 = Source 0.31 C/W RthJC RthCS C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 15 A ISM Repetitive, Pulse Width Limited by TJM 60 A VSD IF = IS, VGS = 0V, Note 1 1.4 V 250 ns trr IRM QRM Note IF = 7.5A, -di/dt = 100A/s VR = 100V, VGS = 0V 7.6 A 660 nC 1. Pulse test, t 300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR15N100Q3 Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Extended Output Characteristics @ T J = 25C 24 VGS = 10V 9V VGS = 10V 14 20 12 16 8V ID - Amperes ID - Amperes 10 8 6 12 8V 8 4 7V 4 2 7V 6V 0 0 0 2 4 6 8 10 12 14 0 16 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 7.5A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125C 14 3.0 VGS = 10V VGS = 10V 12 R DS(on) - Normalized 2.6 10 ID - Amperes 20 VDS - Volts VDS - Volts 7V 8 6 4 I D = 15A 2.2 1.8 I D = 7.5A 1.4 1.0 6V 2 0.6 5V 0 0.2 0 5 10 15 20 25 30 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 7.5A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 10 VGS = 10V 2.4 TJ = 125C 8 2.0 ID - Amperes R DS(on) - Normalized 2.2 1.8 1.6 TJ = 25C 1.4 6 4 1.2 2 1.0 0 0.8 0 2 4 6 8 10 12 14 ID - Amperes (c) 2011 IXYS CORPORATION, All Rights Reserved 16 18 20 22 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFR15N100Q3 Fig. 8. Transconductance Fig. 7. Input Admittance 25 18 TJ = - 40C 16 20 14 g f s - Siemens ID - Amperes 12 10 8 TJ = 125C 25C - 40C 6 4 25C 15 125C 10 5 2 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 0 9 2 4 6 8 VGS - Volts 10 12 14 16 18 20 80 90 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 16 50 45 VDS = 500V 14 I D = 7.5A 40 I G = 10mA 12 VGS - Volts IS - Amperes 35 30 25 20 10 8 6 15 TJ = 125C 4 10 TJ = 25C 2 5 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 10 20 VSD - Volts 30 40 50 60 70 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 10000 f = 1 MHz 1ms 100s 25s Ciss 10 1000 ID - Amperes Capacitance - PicoFarads RDS(on) Limit Coss 1 100 TJ = 150C Crss TC = 25C Single Pulse 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFR15N100Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Z(th)JC - C / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_15N100Q3(Q6) 6-28-11