DATA SHEET
SILICON TRANSISTOR
2SC4955
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
FEATURES
• Low Noise, High Gain
• Low Voltage Operation
• Low Feedback Capacitance
Cre = 0.4 pF TYP.
ORDERING INFORMATION
PART QUANTITY PACKING STYLE
NUMBER
2SC4955-T1 3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation
side of the tape.
2SC4955-T2 3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin1 (Emitter), Pin2 (Base) face to
perforation side of the tape.
*To order evaluation samples, contact your nearby sales office.
Unit sample quantity shall be 50 pcs. (Part No.: 2SC4955)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCBO 9V
Collector to Emitter Voltage VCEO 6V
Emitter to Base Voltage VEBO 2V
Collector Current IC30 mA
Total Power Dissipation PT180 mW
Junction Temperature Tj150 ˚C
Storage Temperature Tstg –64 to +150 ˚C
PACKAGE DIMENSIONS
in millimeters
2.9±0.2
0.950.95
0.4
–0.05
+0.1
1.5
0.4
–0.05
+0.1
2.8±0.2
0.65
–0.15
+0.1
3
2
1
0.16
–0.06
+0.1
0 to 0.1
1.1 to 1.4
0.3
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
Document No. PU10038EJ01V0DS (1st edition)
(Previous No. P10377EJ2V0DS00)
Date Published October 2001 CP(K)
Printed in Japan
NEC Corporation 1993
NEC Compound Semiconductor Devices 2001
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
The mark shows major revised points.
2SC4955
2Data Sheet PU10038EJ01V0DS
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO 0.1
µ
AVCB = 5 V, IE = 0
Emitter Cutoff Current IEBO 0.1
µ
AVEB = 1 V, IC = 0
DC Current Gain hFE 75 150 VCB = 3 V, IC = 10 mA*1
Gain Bandwidth Product fT12 GHz VCE = 3 V, IC = 10 mA
Feed-back Capacitance Cre 0.4 0.7 pF VCB = 3 V, IE = 0, f = 1 MHz*2
Insertion Gain |S21e|27 8.5 dB VCE = 3 V, IC = 10 mA, f = 2.0 GHz
Noise Figure NF 1.5 2.5 dB VCE = 3 V, IC = 3 mA, f = 2.0 GHz
*1 Pulse Measurement; PW ≤ 350
µ
s, Duty Cycle ≤ 2 % Pulsed.
*2 Measured with 3 terminals bridge, Emitter and Case should be grounded.
hFE Classification
Rank T83/FB*
Marking T83
hFE 75 to 150
* Old Specification/New Specification
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
T
A
- Ambient Temperature - ˚C
50
200
100
0 50 100 150
40
30
20
10
00.5 1.0
V
CE
= 3 V
P
T
- Total Power Dissipation - mW
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
I
C
- Collector Current - mA
V
BE
- Base to Emitter Voltage - V
180 mW
Free Air
2SC4955
Data Sheet PU10038EJ01V0DS 3
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE DC CURRENT GAIN vs.
COLLECTOR CURRENT
60
01
500 A
400 A
300 A
200 A
I
B
= 100 A
50
40
30
20
10
23456 0.1
200
100
0
0.2 0.5 1 2 5 10 20 50 100
5 V
V
CE
= 3 V
I
C
- Collector Current - mA
V
CE
- Collector to Emitter Voltage - V I
C
- Collector Current - mA
h
FE
- DC Current Gain
µ
µ
µ
µ
µ
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION GAIN vs.
COLLECTOR CURRENT
1
12
14
0.5
12
10
8
6
4
2
12 51020 50
5 V
3 V
V
CE
= 1 V
10
8
6
4
2 5 10 20 50
I
C
- Collector Current - mA I
C
- Collector Current - mA
f
T
- Gain Bandwidth Product - GHz
f = 2 GH
Z
|S
21e
|
2
- Insertion Power Gain - dB
5 V
f = 2 GH
Z
3 V
V
CE
= 1 V
0.1
0.5
4
0.5
3
2
1
0
12 51020 50
0.2
0.3
0.4
0.5
12 51020
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
NOISE FIGURE vs.
COLLECTOR CURRENT
f = 2 GH
Z
V
CE
= 3 V
NF - Noise Figure - dB
I
C
- Collector Current - mA
C
re
- Feed-back Capacitance - pF
V
CB
- Collector to Base Voltage - V
f = 1 MH
Z
2SC4955
4Data Sheet PU10038EJ01V0DS
S-PARAMETER
(VCE = 3 V, IC = 1 mA, ZO = 50 Ω)
FREQUENCY S11 S21 S12 S22
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
0.200 0.9400 –15.3 3.4560 165.0 0.0420 76.0 0.9780 –8.7
0.400 0.8770 –29.0 3.1870 149.2 0.0800 71.7 0.9490 –16.0
0.600 0.8020 –43.6 3.0390 136.4 0.1140 63.8 0.8910 –23.4
0.800 0.7030 –55.3 2.8000 123.9 0.1340 56.7 0.8280 –29.1
1.000 0.6240 –67.2 2.5890 113.1 0.1520 52.2 0.7630 –33.7
1.200 0.5570 –79.0 2.4320 102.9 0.1690 49.0 0.7170 –37.9
1.400 0.4670 –89.9 2.2140 94.7 0.1810 45.6 0.6940 –41.8
1.600 0.4130 –99.8 2.0430 86.9 0.1880 45.2 0.6450 –43.9
1.800 0.3680 –108.1 1.8790 79.0 0.1910 43.0 0.6050 –46.2
2.000 0.3140 –120.9 1.7720 73.0 0.1990 44.3 0.5860 –50.5
2.200 0.2690 –137.1 1.7010 66.9 0.2140 45.9 0.5600 –53.7
2.400 0.2740 –147.6 1.6030 61.4 0.2170 44.2 0.5520 –54.5
2.600 0.2530 –157.0 1.5010 57.1 0.2270 46.9 0.5260 –58.3
2.800 0.2200 –175.7 1.4330 51.6 0.2460 46.7 0.5160 –61.4
3.000 0.2130 173.7 1.3860 47.5 0.2500 48.9 0.4870 –64.7
(VCE = 3 V, IC = 3 mA, ZO = 50 Ω)
FREQUENCY S11 S21 S12 S22
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
0.200 0.8160 –24.9 8.5180 154.3 0.0410 77.4 0.9240 –14.9
0.400 0.6610 –42.6 6.9310 133.1 0.0680 67.4 0.8190 –24.8
0.600 0.5300 –58.7 5.7770 118.4 0.0900 64.1 0.7120 –31.7
0.800 0.4090 –69.1 4.8150 106.7 0.1070 61.2 0.6430 –34.3
1.000 0.3280 –79.6 4.1130 97.3 0.1250 62.3 0.5820 –36.7
1.200 0.2670 –88.9 3.6270 89.7 0.1440 58.4 0.5300 –38.1
1.400 0.2080 –98.5 3.1680 83.4 0.1570 57.1 0.5100 –40.9
1.600 0.1800 –108.0 2.8600 77.1 0.1680 58.4 0.4870 –41.6
1.800 0.1300 –112.7 2.5690 71.9 0.1870 57.7 0.4550 –42.6
2.000 0.0970 –132.3 2.3660 66.9 0.2030 56.7 0.4490 –45.7
2.200 0.0830 –156.8 2.2340 62.7 0.2230 55.3 0.4250 –50.3
2.400 0.1010 –167.1 2.0840 57.4 0.2450 56.3 0.4270 –48.0
2.600 0.0840 169.7 1.9230 54.3 0.2540 56.5 0.4120 –55.0
2.800 0.0950 156.3 1.8400 49.5 0.2760 54.9 0.3850 –58.0
3.000 0.1010 126.6 1.7450 46.5 0.2930 52.0 0.3650 –59.7
2SC4955
Data Sheet PU10038EJ01V0DS 5
S-PARAMETER
(VCE = 3 V, IC = 5 mA, ZO = 50 Ω)
FREQUENCY S11 S21 S12 S22
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
0.200 0.7170 –30.9 11.5670 147.4 0.0340 77.4 0.8840 –18.6
0.400 0.5230 –48.6 8.6210 124.7 0.0630 68.1 0.7490 –28.2
0.600 0.4020 –64.1 6.7610 110.7 0.0840 67.1 0.6190 –32.6
0.800 0.2860 –71.9 5.4360 100.2 0.0970 62.7 0.5560 –34.2
1.000 0.2270 –77.9 4.5550 91.8 0.1110 65.0 0.5030 –35.0
1.200 0.1830 –85.3 3.9560 85.3 0.1380 63.9 0.4750 –36.8
1.400 0.1280 –95.6 3.4140 79.5 0.1600 62.8 0.4630 –38.5
1.600 0.1080 –105.1 3.0630 74.3 0.1800 62.2 0.4440 –38.5
1.800 0.0680 –113.1 2.7510 69.4 0.1920 61.5 0.4240 –38.5
2.000 0.0370 –131.4 2.5150 64.9 0.2190 60.4 0.4100 –44.3
2.200 0.0410 171.2 2.3620 60.5 0.2310 59.8 0.3850 –49.2
2.400 0.0480 170.0 2.2000 56.8 0.2460 57.9 0.3960 –45.0
2.600 0.0540 146.9 2.0470 53.7 0.2700 56.4 0.3650 –54.6
2.800 0.0760 127.6 1.9320 49.2 0.2980 56.3 0.3790 –55.9
3.000 0.0900 111.8 1.8520 45.8 0.3190 52.5 0.3160 –61.2
(VCE = 3 V, IC = 10 mA, ZO = 50 Ω)
FREQUENCY S11 S21 S12 S22
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
0.200 0.542 –38.9 15.738 136.5 0.035 73.8 0.789 –22.9
0.400 0.348 –53.6 10.350 114.2 0.058 66.8 0.626 –29.9
0.600 0.247 –62.6 7.604 102.2 0.075 70.8 0.529 –31.7
0.800 0.168 –70.7 5.939 93.4 0.094 69.1 0.474 –30.9
1.000 0.120 –73.9 4.899 86.4 0.106 69.3 0.457 –31.3
1.200 0.091 –79.6 4.218 81.0 0.138 68.3 0.427 –33.1
1.400 0.060 –85.7 3.615 76.0 0.160 66.9 0.407 –34.6
1.600 0.041 –97.8 3.244 71.5 0.179 65.2 0.408 –35.2
1.800 0.016 –68.1 2.884 66.9 0.200 66.8 0.383 –38.5
2.000 0.017 54.7 2.625 63.0 0.217 62.8 0.375 –39.4
2.200 0.040 109.0 2.480 59.0 0.238 62.1 0.361 –45.8
2.400 0.053 114.8 2.291 55.5 0.262 58.2 0.356 –42.6
2.600 0.054 97.4 2.139 52.6 0.289 59.3 0.337 –51.4
2.800 0.084 99.5 1.995 47.9 0.292 54.8 0.326 –49.9
3.000 0.108 87.6 1.917 45.4 0.331 54.4 0.274 –58.4
2SC4955
6Data Sheet PU10038EJ01V0DS
M8E 00. 4 - 0110
The information in this document is current as of October, 2001. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
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•
•
•
•
•
•
2SC4955
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