VBO 52 VBO 72 IdAV = 52/72 A VRRM = 800-1800 V Single Phase Rectifier Bridge VRSM VRRM V V 900 1300 1700 1900 800 1200 1600 1800 Symbol VBO VBO VBO VBO 52-08NO7 52-12NO7 52-16NO7 52-18NO7 VBO VBO VBO VBO ~ ~ ~ 72-08NO7 72-12NO7 72-16NO7 72-18NO7 + - Conditions Maximum Ratings VBO 52 VBO 72 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 550 600 750 820 A A * Package with screw terminals * Isolation voltage 3000 V~ * Planar passivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 72873 TVJ = TVJM t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine 500 550 670 740 A A Applications IFSM TVJ = 45C; VR = 0 TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1520 1520 2800 2800 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1250 1250 2250 2250 A2s A2 s TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL < 1 mA Md Mounting torque (M5) Terminal connection torque (M5) Weight typ. Symbol Conditions -40...+150 150 -40...+125 C C C 2500 3000 V~ V~ 5 15% 5 15% Nm Nm 160 g t = 1 min t=1s Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature & power cycling Dimensions in mm (1 mm = 0.0394") VBO 72 IR VR = VRRM; TVJ = 25C VR = VRRM; TVJ = TVJM < < 0.3 5 0.3 5 mA mA VF IF < 1.8 1.6 V VT0 rT For power-loss calculations only TVJ = TVJM 0.8 8 0.8 5 V m RthJC per per per per 1.45 0.36 1.87 0.47 1.1 0.28 1.52 0.38 K/W K/W K/W K/W = 150 A; TVJ = 25C * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Characteristic Values VBO 52 dS dA a Features 72 49 TC = 100C, module TA = 45C (RthCA = 0.6 K/W), module RthJK - 52 41 IdAV IdAV I2t ~ + Type diode module diode module Creeping distance on surface Creepage distance in air Max. allowable acceleration 10 9.4 50 mm mm m/s2 Data according to IEC 60747 refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 20100706a 1-3 VBO 72 I F(OV) -----I FSM 200 4 10 2 As IFSM (A) [A] TVJ=45C 1.6 TVJ=150C 750 670 150 TVJ=45C 1.4 1.2 100 10 3 TVJ=150C 1 0 V RRM 0.8 50 Tvj = 150C IF 0 0.5 1/2 VRRM Tvj = 25C 1 1.5 VF [V] 0.6 10 0.4 2 10 Fig. 1 Forward current versus voltage drop per diode 200 [W] 175 1 V RRM 0 10 1 t[ms] 10 2 10 2 1 3 4 t [ms] 0.35 0.22 = RTHCA [K/W] 0.47 100 DC [A] sin.180 rec.120 105 rec.60 60 150 rec.30 110 125 10 80 TC PSB 82 6 Fig. 3 I2dt versus time (1-10ms) per diode or thyristor Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 95 2 115 0.73 120 40 100 125 1.23 75 130 DC sin.180 rec.120 rec.60 rec.30 50 25 PVTOT 0 2.72 140 50 70 0 [A] IdAV 0 145 C 150 10 30 IFAVM 20 135 Tamb 50 100 [K] 50 100 150 200 T C(C) 150 Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig.5 Maximum forward current at case temperature 2 K/W Z thJK 1.5 Z thJC 1 0.5 Zth 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode or thyristor, calculated IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 20100706a 3-3