© 2010 IXYS All rights reserved 1 - 3
IXYS reserves the right to change limits, test conditions and dimensions.
20100706a
IdAV = 52/72 A
VRRM = 800-1800 V
VRSM VRRM Type
VV
900 800 VBO 52-08NO7 VBO 72-08NO7
1300 1200 VBO 52-12NO7 VBO 72-12NO7
1700 1600 VBO 52-16NO7 VBO 72-16NO7
1900 1800 VBO 52-18NO7 VBO 72-18NO7
Features
• Package with screw terminals
• Isolation voltage 3000 V~
• Planar passivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• UL registered E 72873
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature & power cycling
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 refer to a single diode unless otherwise stated.
VBO 52
VBO 72
Single Phase
Rectifier Bridge
~
~
+-
+
–
~
~
Symbol Conditions Maximum Ratings
VBO 52 VBO 72
IdAV TC = 100°C, module 52 72 A
IdAV TA = 45°C (RthCA = 0.6 K/W), module 41 49 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 550 750 A
VR = 0 t = 8.3 ms (60 Hz), sine 600 820 A
TVJ = TVJM t = 10 ms (50 Hz), sine 500 670 A
VR = 0 t = 8.3 ms (60 Hz), sine 550 740 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 1520 2800 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 1520 2800 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 1250 2250 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 1250 2250 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL < 1 mA t = 1 s 3000 V~
MdMounting torque (M5) 5 ±15% Nm
Terminal connection torque (M5) 5 ±15% Nm
Weight typ. 160 g
Symbol Conditions Characteristic Values
VBO 52 VBO 72
IRVR= VRRM;T
VJ = 25°C < 0.3 0.3 mA
VR= VRRM;T
VJ = TVJM <55mA
VFIF= 150 A; TVJ = 25°C < 1.8 1.6 V
VT0 For power-loss calculations only 0.8 0.8 V
rTTVJ = TVJM 85mΩ
RthJC per diode 1.45 1.1 K/W
per module 0.36 0.28 K/W
RthJK per diode 1.87 1.52 K/W
per module 0.47 0.38 K/W
dSCreeping distance on surface 10 mm
dACreepage distance in air 9.4 mm
aMax. allowable acceleration 50 m/s2
© 2010 IXYS All rights reserved 3 - 3
IXYS reserves the right to change limits, test conditions and dimensions.
20100706a
VBO 72
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current per diode
IFSM: Crest value. t: duration
Fig. 4 Power dissipation vs. direct output current and ambient temperature
Fig. 3
I
2dt versus time (1-10ms)
per diode or thyristor
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
T = 150°C
vj
T = 25°C
vj
20.5 1.5
1
V [V]
F
0
I
F
50
100
200
150
[A]
0.4
0.6
0.8
1
1.2
1.4
1.6
10
0 10
1 10
2 10
3
t[ms]
I (A)
FSM
TVJ=45°C TVJ=150°C
750 670
I
------
I
FSM
F(OV)
0 V
RRM
1/2 V
RR M
1 V
RRM
2 4 6 10
TVJ=45°C
TVJ=150°C
t [ms]
1
10
10
10
2
3
4
As
2
70503010
0
25
50
75
100
125
150
175
200
95
100
105
110
115
120
125
130
135
140
145
150
TC
°C
DC
sin.180°
rec.120°
rec.60°
rec.30°
2.72
1.23
0.73
0.47
0.35 0.22 = RTHCA [ K/W]
IFAVM [A] Tamb [K]
0 50 100 150
[W]
PVTOT
PSB 82
50 100 150 200
0
20
40
60
80 DC
sin.180°
rec.120°
rec.60°
rec.30°
T (°C)
C
I
dAV
[A]
0.01 0.1 110
0.5
1
1.5
2
K/W
Zth
t[s]
ZthJK
ZthJC
Fig.5 Maximum forward current
at case temperature
