SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 2 - OCTOBER 1995
FEATURES
* Extremely low equivalent on-resistance; RCE(sat) 44mΩ at 5A
* 6 Amps continuous current, up to 20 Amps peak current
* Very low saturation voltages
* Excellent hFE characteristics specified up to 10 Amps
PARTMARKING DETAILS - DEVICE TYPE IN FULL
COMPLEMENTARY TYPES - FZT851 FZT951
FZT853 FZT953
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL FZT851 FZT853 UNIT
Collector-Base Voltage VCBO 150 200 V
Collector-Emitter Voltage VCEO 60 100 V
Emitter-Base Voltage VEBO 66V
Peak Pulse Current ICM 20 10 A
Continuous Collector Current IC6A
Power Dissipation at Tamb
=25°C Ptot 3W
Operating and Storage Temperature
Range Tj:Tstg -55 to +150 °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
FZT851
FZT853
C
C
E
B
3 - 260
FZT853
ELECTRICAL CHARACTERISTICS Tamb = 25°C (atunless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage V(BR)CBO 200 300 V IC=100µA
Collector-Emitter
Breakdown Voltage V(BR)CER 200 300 V IC=1µA, RB ≤1kΩ
Collector-Emitter
Breakdown Voltage V(BR)CEO 100 120 V IC=10mA*
Emitter-Base Breakdown
Voltage V(BR)EBO 68 VIE=100µA
Collector Cut-Off Current ICBO 10
1nA
µAVCB=150V, Tamb
=25°C
VCB=150V
Tamb
=100 °C
Collector Cut-Off Current ICER
R ≤1kΩ10
1nA
µAVCB=150V, Tamb
=25°C
VCB=150V
Tamb
=100 °C
Emitter Cut-Off Current IEBO 10 nA VEB=6V
Collector-Emitter
Saturation Voltage VCE(sat) 14
100 50
150
340
mV
mV
mV
IC=0.1A, IB=5mA*
IC=2A, IB=100mA*
IC=5A, IB=500mA*
Base-Emitter
Saturation Voltage VBE(sat) 1250 mV IC=5A, IB=500mA*
Base-Emitter
Turn-On Voltage VBE(on) 1100 mV IC=5A, VCE=2V*
Static Forward
Current Transfer
Ratio
hFE 100
100
50
20
200
200
100
30
300 IC=10mA, VCE=2V
IC=2A, VCE=2V*
IC=4A, VCE=2V*
IC=10A, VCE
=2V*
Transition
Frequency fT130 MHz IC=100mA, VCE
=10V
f=50MHz
Output Capacitance Cobo 35 pF VCB=10V, f=1MHz
Switching Times ton
toff
50
1650 ns
ns IC=1A, VCC=10V
IB1=IB2=100mA,
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT853
0.01 0.1 1 10
0.4
0
0.8
TYPICAL CHARACTERISTICS
VCE(sat) v IC
IC - Collector Current (Amps)
V
CE(sat)
- (Volts)
IC - Collector Current (Amps)
VBE(sat) v IC
0.01 0.1 110
1.0
0.5
2.0
1.5
IC - Collector Current (Amps)
VBE(on) v IC
V
BE
- (Volts)
V
BE(sat)
- (Volts)
0.6
0.2
0.01 0.1 1 10
0
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
IC - Collector Current (Amps)
hFE v IC
h
FE
- Normalised Gain
300
200
100
hFE - Typical Gain
100
VCE=1V
1000.0010.01 0.1 110
1.0
0.5
2.0
1.5
1000.001
VCE=1V
IC/IB=10
IC/IB=50
VCE=5V
IC/IB=50
100
IC/IB=10
Safe Operating Area
Single Pulse Test Tamb=25 °C
IC - Collector Current (A)
0.1
1
1
0.1 10 100
VCE - Collector Voltage (V)
10
DC
10ms
1ms
100µs
100ms
1s
0.01
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FZT853
ELECTRICAL CHARACTERISTICS Tamb = 25°C (atunless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage V(BR)CBO 200 300 V IC=100µA
Collector-Emitter
Breakdown Voltage V(BR)CER 200 300 V IC=1µA, RB ≤1kΩ
Collector-Emitter
Breakdown Voltage V(BR)CEO 100 120 V IC=10mA*
Emitter-Base Breakdown
Voltage V(BR)EBO 68 VIE=100µA
Collector Cut-Off Current ICBO 10
1nA
µAVCB=150V, Tamb
=25°C
VCB=150V
Tamb
=100 °C
Collector Cut-Off Current ICER
R ≤1kΩ10
1nA
µAVCB=150V, Tamb
=25°C
VCB=150V
Tamb
=100 °C
Emitter Cut-Off Current IEBO 10 nA VEB=6V
Collector-Emitter
Saturation Voltage VCE(sat) 14
100 50
150
340
mV
mV
mV
IC=0.1A, IB=5mA*
IC=2A, IB=100mA*
IC=5A, IB=500mA*
Base-Emitter
Saturation Voltage VBE(sat) 1250 mV IC=5A, IB=500mA*
Base-Emitter
Turn-On Voltage VBE(on) 1100 mV IC=5A, VCE=2V*
Static Forward
Current Transfer
Ratio
hFE 100
100
50
20
200
200
100
30
300 IC=10mA, VCE=2V
IC=2A, VCE=2V*
IC=4A, VCE=2V*
IC=10A, VCE
=2V*
Transition
Frequency fT130 MHz IC=100mA, VCE
=10V
f=50MHz
Output Capacitance Cobo 35 pF VCB=10V, f=1MHz
Switching Times ton
toff
50
1650 ns
ns IC=1A, VCC=10V
IB1=IB2=100mA,
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT853
0.01 0.1 1 10
0.4
0
0.8
TYPICAL CHARACTERISTICS
VCE(sat) v IC
IC - Collector Current (Amps)
V
CE(sat)
- (Volts)
IC - Collector Current (Amps)
VBE(sat) v IC
0.01 0.1 110
1.0
0.5
2.0
1.5
IC - Collector Current (Amps)
VBE(on) v IC
V
BE
- (Volts)
V
BE(sat)
- (Volts)
0.6
0.2
0.01 0.1 1 10
0
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
IC - Collector Current (Amps)
hFE v IC
h
FE
- Normalised Gain
300
200
100
hFE - Typical Gain
100
VCE=1V
1000.0010.01 0.1 110
1.0
0.5
2.0
1.5
1000.001
VCE=1V
IC/IB=10
IC/IB=50
VCE=5V
IC/IB=50
100
IC/IB=10
Safe Operating Area
Single Pulse Test Tamb=25 °C
IC - Collector Current (A)
0.1
1
1
0.1 10 100
VCE - Collector Voltage (V)
10
DC
10ms
1ms
100µs
100ms
1s
0.01
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