SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS FZT851 FZT853 ISSUE 2 - OCTOBER 1995 FEATURES * * * * C Extremely low equivalent on-resistance; RCE(sat) 44m at 5A 6 Amps continuous current, up to 20 Amps peak current Very low saturation voltages Excellent hFE characteristics specified up to 10 Amps E C B PARTMARKING DETAILS COMPLEMENTARY TYPES - DEVICE TYPE IN FULL FZT851 FZT951 FZT853 FZT953 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FZT851 FZT853 UNIT Collector-Base Voltage V CBO 150 200 V Collector-Emitter Voltage V CEO 60 100 V Emitter-Base Voltage V EBO 6 6 V Peak Pulse Current I CM 20 10 A Continuous Collector Current IC 6 A Power Dissipation at T amb=25C P tot 3 W Operating and Storage Temperature Range T j:T stg -55 to +150 C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum 3 - 260 FZT853 FZT853 ELECTRICAL CHARACTERISTICS T amb = 25C (atunless otherwise stated) SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V (BR)CBO 200 Collector-Emitter Breakdown Voltage V (BR)CER Collector-Emitter Breakdown Voltage V (BR)CEO Emitter-Base Breakdown Voltage V (BR)EBO UNIT CONDITIONS. 300 V I C=100A 200 300 V I C =1A, RB 1k 100 120 V I C=10mA* TYPICAL CHARACTERISTICS 1.6 I CBO Collector Cut-Off Current I CER R 1k Emitter Cut-Off Current I EBO Collector-Emitter Saturation Voltage V CE(sat) Base-Emitter Saturation Voltage I E=100A 10 1 nA A V CB=150V, T amb=25C V CB=150V T amb=100 C 10 1 nA A V CB=150V, T amb=25C V CB=150V T amb=100 C 10 nA V EB=6V 50 150 340 mV mV mV I C=0.1A, I B=5mA* I C=2A, I B=100mA* I C=5A, I B=500mA* V BE(sat) 1250 mV I C=5A, I B=500mA* Base-Emitter Turn-On Voltage V BE(on) 1100 mV I C =5A, V CE=2V* Static Forward Current Transfer Ratio h FE 14 100 100 100 50 20 200 200 100 30 I C=10mA, V CE=2V I C=2A, V CE=2V* I C=4A, V CE=2V* I C=10A, V CE=2V* 300 Transition Frequency fT 130 MHz I C=100mA, V CE=10V f=50MHz Output Capacitance C obo 35 pF V CB=10V, f=1MHz Switching Times t on t off 50 1650 ns ns I C=1A, V CC=10V I B1=I B2=100mA, *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device hFE - Normalised Gain V 0.4 IC/IB=10 IC/IB=50 0.2 0 0.1 1 10 1.2 1.0 200 0.8 0.6 VCE=5V VCE=1V 100 0.4 0.2 100 0.01 IC - Collector Current (Amps) 0.1 1 100 10 IC - Collector Current (Amps) VCE(sat) v IC hFE v IC VCE=1V 2.0 2.0 1.5 IC/IB=10 IC/IB=50 1.0 0.5 1.5 1.0 0.5 0.01 0.001 0.1 1 10 100 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC Single Pulse Test Tamb=25 C 10 1 DC 1s 100ms 10ms 1ms 100s 0.1 0.01 0.1 1 10 100 VCE - Collector Voltage (V) Safe Operating Area 3 - 263 300 1.4 0 0.01 VBE - (Volts) 8 0.6 IC - Collector Current (A) 6 VCE(sat) - (Volts) 0.8 VBE(sat) - (Volts) Collector Cut-Off Current MAX. hFE - Typical Gain PARAMETER 3 - 264 100 FZT853 FZT853 ELECTRICAL CHARACTERISTICS T amb = 25C (atunless otherwise stated) SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V (BR)CBO 200 Collector-Emitter Breakdown Voltage V (BR)CER Collector-Emitter Breakdown Voltage V (BR)CEO Emitter-Base Breakdown Voltage V (BR)EBO UNIT CONDITIONS. 300 V I C=100A 200 300 V I C =1A, RB 1k 100 120 V I C=10mA* TYPICAL CHARACTERISTICS 1.6 I CBO Collector Cut-Off Current I CER R 1k Emitter Cut-Off Current I EBO Collector-Emitter Saturation Voltage V CE(sat) Base-Emitter Saturation Voltage I E=100A 10 1 nA A V CB=150V, T amb=25C V CB=150V T amb=100 C 10 1 nA A V CB=150V, T amb=25C V CB=150V T amb=100 C 10 nA V EB=6V 50 150 340 mV mV mV I C=0.1A, I B=5mA* I C=2A, I B=100mA* I C=5A, I B=500mA* V BE(sat) 1250 mV I C=5A, I B=500mA* Base-Emitter Turn-On Voltage V BE(on) 1100 mV I C =5A, V CE=2V* Static Forward Current Transfer Ratio h FE 14 100 100 100 50 20 200 200 100 30 I C=10mA, V CE=2V I C=2A, V CE=2V* I C=4A, V CE=2V* I C=10A, V CE=2V* 300 Transition Frequency fT 130 MHz I C=100mA, V CE=10V f=50MHz Output Capacitance C obo 35 pF V CB=10V, f=1MHz Switching Times t on t off 50 1650 ns ns I C=1A, V CC=10V I B1=I B2=100mA, *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device hFE - Normalised Gain V 0.4 IC/IB=10 IC/IB=50 0.2 0 0.1 1 10 1.2 1.0 200 0.8 0.6 VCE=5V VCE=1V 100 0.4 0.2 100 0.01 IC - Collector Current (Amps) 0.1 1 100 10 IC - Collector Current (Amps) VCE(sat) v IC hFE v IC VCE=1V 2.0 2.0 1.5 IC/IB=10 IC/IB=50 1.0 0.5 1.5 1.0 0.5 0.01 0.001 0.1 1 10 100 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC Single Pulse Test Tamb=25 C 10 1 DC 1s 100ms 10ms 1ms 100s 0.1 0.01 0.1 1 10 100 VCE - Collector Voltage (V) Safe Operating Area 3 - 263 300 1.4 0 0.01 VBE - (Volts) 8 0.6 IC - Collector Current (A) 6 VCE(sat) - (Volts) 0.8 VBE(sat) - (Volts) Collector Cut-Off Current MAX. hFE - Typical Gain PARAMETER 3 - 264 100