2N5551 - Avic Electronics Corp. - Datasheet.Directory

@vic 2N5551

NPN General Purpose Amplifier

FEATURES & USE

★ High Collector Breakdown Voltage; Low Noise;

★ Complementary to 2N5401

★ This device is designed as a general purpose amplifier and switch for

applications requiring high voltages.

TO – 92

1.Emitter 2.Base 3.Collector

Absolute Maximum Ratings Ta = 25`C

Symbol Parameter Ratings Units

VCBO Collector -Bas e Voltage 180 V

VCEO Collector-Em itter Voltage 160 V

VEBO Emitter -Base Voltage 5 V

IC Collector Current 600 mA

TJ Junction Temperature 150 `C

TSTG Storage Temperature -55 - 150 `C

Electrical Characteristics Ta = 25`C

Symbol Parameter Test Condition Min. Typ. Max. Units

BVCBO Collector-Base Breakdown Voltage IC=100μA，IE=0 180 V

BVCEO Collector-Emitter Breakdown Voltage IC=1mA，IB=0 160 V

BVEBO Emitter-Base Breakdown Voltage IE=100μA，IC=0 5 V

ICBO Collector Cut-off Current VCB=120V, IE=0 200 nA

IEBO Emitter Cut-off Current VEB=4V, IC=0 200 nA

HFE DC Current Gain VCE=5V, IC=10mA 80 300

VCE(sat) Collector-Emitter Saturation Voltage IC=50mA, IB=5mA 0.25 V

VBE(sat) Base-Emitter Saturation Voltage IC=50mA, IB=5mA 1.0 V

hFE Classification

Classification A B1 B2 C1 C2 C3

hFE 50-100 100-150 150-200 200-230 230-250 250-300