STP33N10
STP33N10FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
■TYPICAL RDS(on) = 0.045 Ω
■AVALANCHE RUGGED TECHNOLOGY
■100% AVALANCHE TESTED
■REPETITIVE AVALANCHE DATA AT 100oC
■LOW GATE CHARGE
■HIGH CURRENT CAPABILITY
■175oC OPERATING TEMPERATURE
■APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
■HIGH CURRENT, HIGH SPEED SWITCHING
■SOLENOID AND RELAY DRIVERS
■REGULATORS
■DC-DC & DC-AC CONVERTERS
■MOTOR CONTROL, AUDIO AMPLIFIERS
■AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
TYPE VDSS RDS(on) ID
STP33N10
STP33N10FI 100 V
100 V <0.06Ω
<0.06Ω33 A
18 A
123
TO-220 ISOWATT220
July 1993
123
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP33N10 STP33N10FI
VDS Drain-source Voltage (VGS =0) 100 V
V
DGR Drain- gate Voltage (RGS =20kΩ)100V
V
GS Gate-source Voltage ±20 V
IDDrain Current (continuous) at Tc=25o
C3318A
I
D
Drain Current (continuous) at Tc=100o
C23 12A
I
DM(•) Drain Current (pulsed) 132 132 A
Ptot Total Dissipation at Tc=25o
C 150 45 W
Derating Factor 1 0.3 W/oC
VISO Insulation Withstand Voltage (DC) 2000 V
Tstg Storage Temperature -65 to 175 oC
TjMax. Operating Junction Temperature 175 oC
(•) Pulsewidth limited by safe operating area
1/10
THERMAL DATA
TO-220 ISOWATT220
Rthj-case Thermal Resistance Junction-case Max 1 3.33 oC/W
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tjmax, δ <1%) 33 A
EAS Single Pulse Avalanche Energy
(starting Tj=25o
C, ID=I
AR,V
DD =25V) 240 mJ
EAR Repetitive Avalanche Energy
(pulse width limited by Tjmax, δ <1%) 60 mJ
IAR Avalanche Current, Repetitive or Not-Repetitive
(Tc= 100 oC, pulse width limited by Tjmax, δ <1%) 23 A
ELECTRICAL CHARACTERISTICS (Tcase =25o
C unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID=250µAV
GS = 0 100 V
IDSS Zero Gate Voltage
Drain Current (VGS =0) V
DS =MaxRating
V
DS = Max Rating x 0.8 Tc=125o
C250
1000 µA
µA
IGSS Gate-body Leakage
Current (VDS =0) V
GS =± 20 V ±100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS =V
GS ID=250µA22.94V
R
DS(on) Static Drain-source On
Resistance VGS =10V I
D=17A
V
GS =10V I
D=17A T
c= 100oC0.045 0.06
0.12 Ω
Ω
ID(on) On State Drain Current VDS >I
D(on) xR
DS(on)max
VGS =10V 33 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗)Forward
Transconductance VDS >I
D(on) xR
DS(on)max ID=17A 10 18 S
C
iss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25V f=1MHz V
GS = 0 1600
460
140
2100
600
200
pF
pF
pF
STP33N10/FI
2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
trTurn-on Time
Rise Time VDD =50V I
D=5A
R
G=50 Ω VGS =10V
(see test circuit, figure 3)
55
110 80
160 ns
ns
(di/dt)on Turn-on Current Slope VDD =80V I
D=33A
R
G=50 Ω VGS =10V
(see test circuit, figure 5)
300 A/µs
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =80V I
D=33A V
GS =10V 55
11
26
80 nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD =80V I
D=33A
R
G=50 Ω VGS =10V
(see test circuit, figure 5)
110
85
200
160
120
290
ns
ns
ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM(•)Source-drain Current
Source-drain Current
(pulsed)
33
132 A
A
VSD (∗) Forward On Voltage ISD =33A V
GS =0 1.6 V
t
rr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 33 A di/dt = 100 A/µs
VDD =50V T
j= 150 oC
(see test circuit, figure 5)
140
0.7
10
ns
µC
A
(∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse widthlimited by safe operating area
Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220
STP33N10/FI
3/10
Thermal Impedeance For TO-220
Derating Curve For TO-220
Output Characteristics
Thermal Impedance For ISOWATT220
Derating Curve For ISOWATT220
Transfer Characteristics
STP33N10/FI
4/10
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs
Temperature
STP33N10/FI
5/10
Turn-on Current Slope Turn-off Drain-source Voltage Slope
Cross-over Time Switching Safe Operating Area
Source-drain Diode Forward CharacteristicsAccidental Overload Area
STP33N10/FI
6/10
Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For
Resistive Load Fig. 4: Gate Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Reverse Recovery Time
Fig. 1: Unclamped Inductive Load Test Circuits
STP33N10/FI
7/10
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP33N10/FI
8/10
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.4 0.7 0.015 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
L2
A
B
D
E
H
G
L6
Ø
F
L3
G1
123
F2
F1
L7
L4
ISOWATT220 MECHANICAL DATA
P011G
STP33N10/FI
9/10
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor forany infringement of patents orother rights of third partieswhich may results from its use. No
license is granted by implication or otherwiseunder anypatent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedfor use as criticalcomponents inlife supportdevices or systems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia -Malta - Morocco- The Netherlands -
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STP33N10/FI
10/10
