Transistors
1
Publication date: January 2003 SJC00061BED
2SB0873 (2SB873)
Silicon PNP epitaxial planar type
For low-frequency power amplification
For DC-DC converter
For stroboscope
■Features
•Low collector-emitter saturation voltage VCE(sat)
•Large collector current IC
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −30 V
Collector-emitter voltage (Base open) VCEO −20 V
Emitter-base voltage (Collector open) VEBO −7V
Collector current IC−5A
Peak collector current ICP −10 A
Collector power dissipation PC1W
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
Note) The part number in the parenthesis shows conventional part number.
1: Emitter
2: Collector
3: Base
EIAJ: SC-51
TO-92L-A1 Package
5.9
±0.2
0.7
±0.1
4.9
±0.2
8.6
±0.2
0.7
+0.3
–0.2
13.5
±0.5
2.54
±0.15
(3.2)
(1.27)(1.27)
0.45
+0.2
–0.1
0.45
+0.2
–0.1
132
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0 −20 V
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7V
Collector-base cutoff current (Emitter open)
ICBO VCB = −10 V, IE = 0 −100 nA
Emitter-base cutoff current (Collector open)
IEBO VEB = −5 V, IC = 0 −100 nA
Forward current transfer ratio *1, 2 hFE VCE = −2 V, IC = −2 A 90 625
Collector-emitter saturation voltage *1VCE(sat) IC = −3 A, IB = − 0.1 A −1V
Transition frequency fTVCB = −6 V, IE = 50 mA, f = 200 MHz 120 MHz
Collector output capacitance Cob VCB = −20 V, IE = 0, f = 1 MHz 85 pF
(Common-emitter reverse transfer)
Rank P Q R
hFE 90 to 135 120 to 205 180 to 625
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
2SB0873
2SJC00061BED
VCE(sat) IChFE ICfT IE
PC TaIC VCE IC VBE
Cob VCB Safe operation area
0 16040 12080 14020 10060
0
1.2
1.0
0.8
0.6
0.4
0.2
Collector power dissipation P
C
(W)
Ambient temperature T
a
(°C)
0−12−10−8−2−6−4
0
−6
−5
−4
−3
−2
−1
Ta = 25°C
−35 mA −30 mA
−25 mA
−20 mA
−15 mA
−10 mA
−5 mA
−1 mA
IB = −40 mA
Collector current IC (A)
Collector-emitter voltage VCE (V)
0−2.0−1.6− 0.4 −1.2− 0.8
0
−12
−10
−8
−6
−4
−2
V
CE
= −2 V
T
a
= 75°C−25°C
25°C
Base-emitter voltage V
BE
(V)
Collector current I
C
(A)
− 0.01
− 0.1 −1−10
− 0.01
− 0.1
−1
−10
−100 I
C
/ I
B
= 30
T
a
= 75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(A)
− 0.01
− 0.1 −1−10
0
600
500
400
300
200
100
V
CE
= −2 V
T
a
= 75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(A)
1 10 100
0
240
200
160
120
80
40
VCB = −6 V
Ta = 25°C
Transition frequency fT (MHz)
Emitter current IE (mA)
−1−10 −100
Collector output capacitance
(Common base, input open circuited) Cob (pF)
0
200
160
120
80
40
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector-base voltage VCB (V)
− 0.1 −1−10 −100
− 0.01
− 0.1
−1
−10
−100 Single pulse
Ta = 25°C
t = 10 ms
t = 1 s
ICP
IC
Collector current IC (A)
Collector-emitter voltage VCE (V)
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
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2002 JUL
