APT2x31_30DQ60J
DYNAMIC CHARACTERISTICS
053-4203 Rev E 7-2008
New Diode Data Sheet By Darel Bidwell
ZθJC, THERMAL IMPEDANCE (°C/W)
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
Peak T
J
= P
DM
x Z
θJC + TC
Duty Factor D = t1/t2
t2
t1
P
DM
Note:
MIN TYP MAX
- 21
- 25
- 35
- 3
- 160
- 480
- 6
- 85
- 920
- 20
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
trr
trr
Qrr
IRRM
trr
Qrr
IRRM
trr
Qrr
IRRM
Test Conditions
IF = 30A, diF/dt = -200A/µs
VR = 400V, TC = 25°C
IF = 30A, diF/dt = -200A/µs
VR = 400V, TC = 125°C
IF = 30A, diF/dt = -1000A/µs
VR = 400V, TC = 125°C
IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
Package Weight
Maximum Mounting Torque
Symbol
RθJC
VIsolation
WT
Torque
MIN TYP MAX
1.21
2500
1.03
29.2
10
1.1
UNIT
°C/W
Volts
oz
g
lb•in
N•m
D = 0.9
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.320 0.515 0.375
0.00278 0.0421 0.242
Dissipated Power
(Watts)
TJ (°C) TC (°C)
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
ZEXT