BC549C, BC550C Low Noise Transistors NPN Silicon Features * Pb-Free Packages are Available* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector -Emitter Voltage VCEO 45 Vdc Collector -Base Voltage VCBO 50 Vdc Emitter -Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 100 Vdc Total Device Dissipation @ TA = 25C Derate above = 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TA = 25C Derate above = 25C PD 1.5 12 W mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 2 BASE 3 EMITTER TO-92 CASE 29-11 STYLE 17 1 2 3 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction-to-Ambient Characteristic RqJA 200 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. BC5x yC AYWW G G BC5xyC = Device Code x = 4 or 5 y = 9 or 0 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device BC549C BC549CG BC550C *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 February, 2006 - Rev. 1 1 BC550CG Package Shipping TO-92 5000 Units / Box TO-92 (Pb-Free) 5000 Units / Box TO-92 5000 Units / Box TO-92 (Pb-Free) 5000 Units / Box Publication Order Number: BC550C/D BC549C, BC550C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 45 - - 50 - - 5.0 - - Vdc - - - - 15 5.0 nAdc mAdc - - 15 nAdc 100 420 270 500 - 800 - - - 0.075 0.3 0.25 0.25 0.6 0.6 - 1.1 - - - 0.55 0.52 0.55 0.62 - - 0.7 fT - 250 - MHz Ccbo - 2.5 - pF 450 600 900 - - 0.6 - 2.5 10 OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Collector -Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO Emitter -Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 30 V, IE = 0, TA = +125C) ICBO Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO Vdc Vdc ON CHARACTERISTICS DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE Collector -Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 10 mAdc, IB = see note 1) (IC = 100 mAdc, IB = 5.0 mAdc, see note 2) VCE(sat) Base-Emitter Saturation Voltage (IC = 100 mAdc, IB = 5.0 mAdc) VBE(sat) Base-Emitter On Voltage (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) VBE(on) - Vdc Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current -Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Collector-Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Small-Signal Current Gain (IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) hfe Noise Figure (IC = 200 mAdc, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz) (IC = 200 mAdc, VCE = 5.0 Vdc, RS = 100 kW, f = 1.0 kHz) dB NF1 NF2 1. IB is value for which IC = 11 mA at VCE = 1.0 V. 2. Pulse test = 300 ms - Duty cycle = 2%. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 - BC549C, BC550C 1.0 VCE = 10 V TA = 25C 1.5 0.9 1.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 0.7 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 0 0.1 100 200 Figure 2. Normalized DC Current Gain 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mAdc) 50 100 Figure 3. "Saturation" and "On" Voltages 10 400 300 7.0 100 80 60 C, CAPACITANCE (pF) 200 VCE = 10 V TA = 25C 40 30 TA = 25C Cib 5.0 3.0 Cob 2.0 20 0.5 0.7 1.0 2.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 1.0 0.4 50 0.6 1.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Current-Gain -- Bandwidth Product r b, BASE SPREADING RESISTANCE (OHMS) f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) TA = 25C 0.8 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 Figure 5. Capacitance 170 160 150 VCE = 10 V f = 1.0 kHz TA = 25C 140 130 120 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mAdc) 5.0 Figure 6. Base Spreading Resistance http://onsemi.com 3 10 20 40 BC549C, BC550C PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X-X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- STYLE 17: PIN 1. COLLECTOR 2. BASE 3. 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