© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 1 1Publication Order Number:
BC550C/D
BC549C, BC550C
Low Noise Transistors
NPN Silicon
Features
•Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 45 Vdc
Collector−Base Voltage VCBO 50 Vdc
Emitter−Base Voltage VEBO 5.0 Vdc
Collector Current − Continuous IC100 Vdc
Total Device Dissipation @ TA = 25°C
Derate above = 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TA = 25°C
Derate above = 25°CPD1.5
12 W
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
BC549C TO−92 5000 Units / Box
BC5xyC = Device Code
x = 4 or 5
y = 9 or 0
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
MARKING DIAGRAM
BC550C TO−92 5000 Units / Box
BC549CG TO−92
(Pb−Free) 5000 Units / Box
BC550CG TO−92
(Pb−Free) 5000 Units / Box
(Note: Microdot may be in either location)
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TO−92
CASE 29−11
STYLE 17
123
BC5x
yC
AYWW G
G
COLLECTOR
1
2
BASE
3
EMITTER
BC549C, BC550C
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0) V(BR)CEO 45 − − Vdc
Collector−Base Breakdown Voltage
(IC = 10 mAdc, IE = 0) V(BR)CBO 50 − − Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − − Vdc
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 30 V, IE = 0, TA = +125°C)
ICBO −
−−
−15
5.0 nAdc
mAdc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0) IEBO − − 15 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
hFE 100
420 270
500 −
800
−
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 10 mAdc, IB = see note 1)
(IC = 100 mAdc, IB = 5.0 mAdc, see note 2)
VCE(sat) −
−
−
0.075
0.3
0.25
0.25
0.6
0.6
Vdc
Base−Emitter Saturation Voltage
(IC = 100 mAdc, IB = 5.0 mAdc) VBE(sat) − 1.1 − Vdc
Base−Emitter On Voltage
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
VBE(on) −
−
0.55
0.52
0.55
0.62
−
−
0.7
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT− 250 − MHz
Collector−Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Ccbo − 2.5 − pF
Small−Signal Current Gain
(IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) hfe 450 600 900 −
Noise Figure
(IC = 200 mAdc, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz)
(IC = 200 mAdc, VCE = 5.0 Vdc, RS = 100 kW, f = 1.0 kHz) NF1
NF2−
−0.6
−2.5
10
dB
1. IB is value for which IC = 11 mA at VCE = 1.0 V.
2. Pulse test = 300 ms − Duty cycle = 2%.
RSin
enIDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
BC549C, BC550C
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3
2.0
1.5
1.0
0.2
0.3
0.4
0.6
0.8
2000.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mAdc)
Figure 2. Normalized DC Current Gain
hFE, NORMALIZED DC CURRENT GAIN
VCE = 10 V
TA = 25°C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.20.1 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mAdc)
Figure 3. “Saturation” and “On” Voltages
V, VOLTAGE (VOLTS)
TA = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE(sat) @ IC/IB = 10
400
20
30
40
60
80
100
200
300
0.5 1.00.7 2.0 5.0 7.0 10 20 50
IC, COLLECTOR CURRENT (mAdc)
Figure 4. Current−Gain — Bandwidth Product
fT, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
C, CAPACITANCE (pF)
10
1.0
2.0
3.0
5.0
7.0
0.4 0.6 1.0 2.0 4.0 10 20 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
VCE = 10 V
TA = 25°C
TA = 25°C
Cib
Cob
rb, BASE SPREADING RESISTANCE (OHMS)
170
160
150
140
130
120 100.1 0.2 0.5 1.0 2.0 5.0
IC, COLLECTOR CURRENT (mAdc)
Figure 6. Base Spreading Resistance
VCE = 10 V
f = 1.0 kHz
TA = 25°C
BC549C, BC550C
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4
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 −−− 12.70 −−−
L0.250 −−− 6.35 −−−
N0.080 0.105 2.04 2.66
P−−− 0.100 −−− 2.54
R0.115 −−− 2.93 −−−
V0.135 −−− 3.43 −−−
1
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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BC550/D
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