MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMFDPower-Transistor,250V IPP220N25NFD DataSheet Rev.2.0 Final PowerManagement&Multimarket OptiMOSTMFDPower-Transistor,250V IPP220N25NFD 1Description TO-220-3 tab Features *N-channel,normallevel *FastDiode(FD)withreducedQrr *Optimizedforhardcommutationruggedness *Verylowon-resistanceRDS(on) *175Coperatingtemperature *Pb-freeleadplating;RoHScompliant *QualifiedaccordingtoJEDEC1)fortargetapplication *Halogen-freeaccordingtoIEC61249-2-21 Drain Pin 2, tab Table1KeyPerformanceParameters Parameter Value Unit VDS 250 V RDS(on),max 22 m ID 61 A Type/OrderingCode Package IPP220N25NFD PG-TO220-3 1) Gate Pin 1 Source Pin 3 Marking 220N25NF RelatedLinks - J-STD20 and JESD22 Final Data Sheet 2 Rev.2.0,2014-02-06 OptiMOSTMFDPower-Transistor,250V IPP220N25NFD TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 3 Rev.2.0,2014-02-06 OptiMOSTMFDPower-Transistor,250V IPP220N25NFD 2Maximumratings atTj=25C,unlessotherwisespecified Table2Maximumratings at 25 C Parameter Symbol Continuous drain current Values Unit Note/TestCondition 61 44 A TC=25C TC=100C - 244 A TC=25C - - 610 mJ ID=37A,RGS=25 dv/dt - - 60 kV/s ID=122A,VDS=125V, di/dt=1500A/s,Tj,max=175C Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 300 W TC=25C Operating and storage temperature Tj,Tstg -55 - 175 C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current 1) ID,pulse - Avalanche energy, single pulse EAS Reversediodepeakdv/dt 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 0.3 0.5 K/W - Thermal resistance, junction - ambient, RthJA minimal footprint - - 62 K/W - Thermal resistance, junction - ambient, RthJA 6 cm2 cooling area 2) - - 40 K/W - 1) See figure 3 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 4 Rev.2.0,2014-02-06 OptiMOSTMFDPower-Transistor,250V IPP220N25NFD 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 4 V VDS=VGS,ID=270A - 0.1 10 1 100 A VDS=200V,VGS=0V,Tj=25C VDS=200V,VGS=0V,Tj=125C IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 19 22 m VGS=10V,ID=61A Gate resistance RG - 2.5 3.8 - Transconductance gfs 60 120 - S |VDS|>2|ID|RDS(on)max,ID=61A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 250 - Gate threshold voltage VGS(th) 2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 5320 7076 pF VGS=0V,VDS=125V,f=1MHz Output capacitance Coss - 299 398 pF VGS=0V,VDS=125V,f=1MHz Reverse transfer capacitance Crss - 6 13 pF VGS=0V,VDS=125V,f=1MHz Turn-on delay time td(on) - 14 - ns VDD=125V,VGS=10V,ID=30.5A, RG,ext=1.6 Rise time tr - 10 - ns VDD=125V,VGS=10V,ID=30.5A, RG,ext=1.6 Turn-off delay time td(off) - 26 - ns VDD=125V,VGS=10V,ID=30.5A, RG,ext=1.6 Fall time tf - 8 - ns VDD=125V,VGS=10V,ID=30.5A, RG,ext=1.6 Unit Note/TestCondition Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 24 - nC VDD=125V,ID=61A,VGS=0to10V Gate to drain charge Qgd - 7 - nC VDD=125V,ID=61A,VGS=0to10V Switching charge Qsw - 16 - nC VDD=125V,ID=61A,VGS=0to10V Gate charge total Qg - 65 86 nC VDD=125V,ID=61A,VGS=0to10V Gate plateau voltage Vplateau - 4.5 - V VDD=125V,ID=61A,VGS=0to10V Output charge Qoss - 144 - nC VDD=125V,VGS=0V 1) See Gate charge waveforms for parameter definition Final Data Sheet 5 Rev.2.0,2014-02-06 OptiMOSTMFDPower-Transistor,250V IPP220N25NFD Table7Reversediode Parameter Symbol Values Unit Note/TestCondition 61 A TC=25C - 244 A TC=25C - - 122 A - VSD - 1 1.2 V VGS=0V,IF=61A,Tj=25C Reverse recovery time trr - 128 257 ns VR=100V,IF=42.7A,diF/dt=100A/s Reverse recovery charge Qrr - 623 - nC VR=100V,IF=42.7A,diF/dt=100A/s Min. Typ. Max. IS - - IS,pulse - IS,hard Diode forward voltage Diode continous forward current Diode pulse current 1) Diode hard commutation current 1) 2) 2) Diode pulse current is defined by thermal and/or package limits Maximum allowed hard-commutated current through diode at di/dt=1500 A/s Final Data Sheet 6 Rev.2.0,2014-02-06 OptiMOSTMFDPower-Transistor,250V IPP220N25NFD 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 320 70 280 60 240 50 40 ID[A] Ptot[W] 200 160 30 120 20 80 10 40 0 0 50 100 150 0 200 0 50 100 TC[C] 150 200 TC[C] Ptot=f(TC) ID=f(TC);VGS10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 100 10 1 s 10 s 102 100 s ZthJC[K/W] 0.5 ID[A] 1 ms 1 10 10 ms 10-1 0.2 0.1 DC 0.05 0 10 0.02 0.01 single pulse 10-1 10-1 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 7 Rev.2.0,2014-02-06 OptiMOSTMFDPower-Transistor,250V IPP220N25NFD Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 150 30 10 V 125 4.5 V 25 7V 5V 5V 75 50 10 V 15 10 4.5 V 25 0 7V 20 RDS(on)[mW] ID[A] 100 5 0 1 2 3 4 0 5 0 20 40 60 VDS[V] 80 100 120 140 ID[A] ID=f(VDS);Tj=25C;parameter:VGS RDS(on)=f(ID);Tj=25C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 180 120 160 140 100 120 gfs[S] ID[A] 80 60 100 80 60 40 40 175 C 20 20 25 C 0 0 2 4 6 8 0 0 VGS[V] 50 75 100 125 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 25 gfs=f(ID);Tj=25C 8 Rev.2.0,2014-02-06 OptiMOSTMFDPower-Transistor,250V IPP220N25NFD Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 70 4.0 60 3.5 2700 A 3.0 50 VGS(th)[V] RDS(on)[mW] 2.5 40 98% 30 270 A 2.0 1.5 typ 20 1.0 10 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[C] 60 100 140 180 Tj[C] RDS(on)=f(Tj);ID=61A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 Ciss 25 C 175 C 25C, 98% 175C, 98% 103 Coss IF[A] C[pF] 102 102 101 Crss 101 100 0 40 80 120 160 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 9 Rev.2.0,2014-02-06 OptiMOSTMFDPower-Transistor,250V IPP220N25NFD Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 102 10 8 200 V 25 C VGS[V] IAS[A] 125 C 101 125 V 6 100 C 50 V 4 2 100 100 101 102 103 0 0 tAV[s] 20 40 60 80 Qgate[nC] IAS=f(tAV);RGS=25;parameter:Tj(start) VGS=f(Qgate);ID=61Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 290 280 VBR(DSS)[V] 270 260 250 240 230 220 -60 -20 20 60 100 140 180 Tj[C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 10 Rev.2.0,2014-02-06 OptiMOSTMFDPower-Transistor,250V IPP220N25NFD 6PackageOutlines Figure1OutlinePG-TO220-3,dimensionsinmm/inches Final Data Sheet 11 Rev.2.0,2014-02-06 OptiMOSTMFDPower-Transistor,250V IPP220N25NFD RevisionHistory IPP220N25NFD Revision:2014-02-06,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-02-06 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 12 Rev.2.0,2014-02-06