MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMFDPower-Transistor,250V
IPP220N25NFD
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
2
OptiMOSTMFDPower-Transistor,250V
IPP220N25NFD
Rev.2.0,2014-02-06Final Data Sheet
tab
TO-220-3
Drain
Pin 2, tab
Gate
Pin 1
Source
Pin 3
1Description
Features
•N-channel,normallevel
•FastDiode(FD)withreducedQrr
•Optimizedforhardcommutationruggedness
•Verylowon-resistanceRDS(on)
•175°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplication
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter Value Unit
VDS 250 V
RDS(on),max 22 mΩ
ID61 A
Type/OrderingCode Package Marking RelatedLinks
IPP220N25NFD PG-TO220-3 220N25NF -
1) J-STD20 and JESD22
3
OptiMOSTMFDPower-Transistor,250V
IPP220N25NFD
Rev.2.0,2014-02-06Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4
OptiMOSTMFDPower-Transistor,250V
IPP220N25NFD
Rev.2.0,2014-02-06Final Data Sheet
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
at 25 °C
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current ID-
-
-
-
61
44 ATC=25°C
TC=100°C
Pulsed drain current 1) ID,pulse - - 244 A TC=25°C
Avalanche energy, single pulse EAS - - 610 mJ ID=37A,RGS=25Ω
Reversediodepeakdv/dtdv/dt- - 60 kV/µs ID=122A,VDS=125V,
di/dt=1500A/µs,Tj,max=175°C
Gate source voltage VGS -20 - 20 V -
Power dissipation Ptot - - 300 W TC=25°C
Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category;
DIN IEC 68-1: 55/175/56
3Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - 0.3 0.5 K/W -
Thermal resistance, junction - ambient,
minimal footprint RthJA - - 62 K/W -
Thermal resistance, junction - ambient,
6 cm2 cooling area 2) RthJA - - 40 K/W -
1) See figure 3
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
5
OptiMOSTMFDPower-Transistor,250V
IPP220N25NFD
Rev.2.0,2014-02-06Final Data Sheet
4Electricalcharacteristics
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 250 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS,ID=270µA
Zero gate voltage drain current IDSS -
-
0.1
10
1
100 µA VDS=200V,VGS=0V,Tj=25°C
VDS=200V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) - 19 22 mΩVGS=10V,ID=61A
Gate resistance RG- 2.5 3.8 Ω-
Transconductance gfs 60 120 - S |VDS|>2|ID|RDS(on)max,ID=61A
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 5320 7076 pF VGS=0V,VDS=125V,f=1MHz
Output capacitance Coss - 299 398 pF VGS=0V,VDS=125V,f=1MHz
Reverse transfer capacitance Crss - 6 13 pF VGS=0V,VDS=125V,f=1MHz
Turn-on delay time td(on) - 14 - ns VDD=125V,VGS=10V,ID=30.5A,
RG,ext=1.6Ω
Rise time tr- 10 - ns VDD=125V,VGS=10V,ID=30.5A,
RG,ext=1.6Ω
Turn-off delay time td(off) - 26 - ns VDD=125V,VGS=10V,ID=30.5A,
RG,ext=1.6Ω
Fall time tf- 8 - ns VDD=125V,VGS=10V,ID=30.5A,
RG,ext=1.6Ω
Table6Gatechargecharacteristics1)
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 24 - nC VDD=125V,ID=61A,VGS=0to10V
Gate to drain charge Qgd - 7 - nC VDD=125V,ID=61A,VGS=0to10V
Switching charge Qsw - 16 - nC VDD=125V,ID=61A,VGS=0to10V
Gate charge total Qg- 65 86 nC VDD=125V,ID=61A,VGS=0to10V
Gate plateau voltage Vplateau - 4.5 - V VDD=125V,ID=61A,VGS=0to10V
Output charge Qoss - 144 - nC VDD=125V,VGS=0V
1) See ″Gate charge waveforms″ for parameter definition
6
OptiMOSTMFDPower-Transistor,250V
IPP220N25NFD
Rev.2.0,2014-02-06Final Data Sheet
Table7Reversediode
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode continous forward current IS- - 61 A TC=25°C
Diode pulse current 1) IS,pulse - - 244 A TC=25°C
Diode hard commutation current 2) IS,hard - - 122 A -
Diode forward voltage VSD - 1 1.2 V VGS=0V,IF=61A,Tj=25°C
Reverse recovery time trr - 128 257 ns VR=100V,IF=42.7A,diF/dt=100A/µs
Reverse recovery charge Qrr - 623 - nC VR=100V,IF=42.7A,diF/dt=100A/µs
1) Diode pulse current is defined by thermal and/or package limits
2) Maximum allowed hard-commutated current through diode at di/dt=1500 A/µs
7
OptiMOSTMFDPower-Transistor,250V
IPP220N25NFD
Rev.2.0,2014-02-06Final Data Sheet
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 50 100 150 200
0
40
80
120
160
200
240
280
320
Ptot=f(TC)
Diagram2:Draincurrent
TC[°C]
ID[A]
0 50 100 150 200
0
10
20
30
40
50
60
70
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
10-1 100101102103
10-1
100
101
102
103
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-5 10-4 10-3 10-2 10-1 100
10-2
10-1
100
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tp);parameter:D=tp/T
8
OptiMOSTMFDPower-Transistor,250V
IPP220N25NFD
Rev.2.0,2014-02-06Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
012345
0
25
50
75
100
125
150
10 V
7 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.drain-sourceonresistance
ID[A]
RDS(on)[mW]
0 20 40 60 80 100 120 140
0
5
10
15
20
25
30
4.5 V
5 V
7 V
10 V
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
VGS[V]
ID[A]
02468
0
20
40
60
80
100
120
175 °C
25 °C
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Diagram8:Typ.forwardtransconductance
ID[A]
gfs[S]
0 25 50 75 100 125
0
20
40
60
80
100
120
140
160
180
gfs=f(ID);Tj=25°C
9
OptiMOSTMFDPower-Transistor,250V
IPP220N25NFD
Rev.2.0,2014-02-06Final Data Sheet
Diagram9:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[mW]
-60 -20 20 60 100 140 180
0
10
20
30
40
50
60
70
98%
typ
RDS(on)=f(Tj);ID=61A;VGS=10V
Diagram10:Typ.gatethresholdvoltage
Tj[°C]
VGS(th)[V]
-60 -20 20 60 100 140 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
2700 µA
270 µA
VGS(th)=f(Tj);VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
VDS[V]
C[pF]
0 40 80 120 160
100
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram12:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.5 1.0 1.5 2.0
100
101
102
103
25 °C
175 °C
25°C, 98%
175°C, 98%
IF=f(VSD);parameter:Tj
10
OptiMOSTMFDPower-Transistor,250V
IPP220N25NFD
Rev.2.0,2014-02-06Final Data Sheet
Diagram13:Avalanchecharacteristics
tAV[µs]
IAS[A]
100101102103
100
101
102
25 °C
100 °C
125 °C
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
Diagram14:Typ.gatecharge
Qgate[nC]
VGS[V]
0 20 40 60 80
0
2
4
6
8
10
200 V
125 V
50 V
VGS=f(Qgate);ID=61Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-60 -20 20 60 100 140 180
220
230
240
250
260
270
280
290
VBR(DSS)=f(Tj);ID=1mA
Gate charge waveforms
11
OptiMOSTMFDPower-Transistor,250V
IPP220N25NFD
Rev.2.0,2014-02-06Final Data Sheet
6PackageOutlines
Figure1OutlinePG-TO220-3,dimensionsinmm/inches
12
OptiMOSTMFDPower-Transistor,250V
IPP220N25NFD
Rev.2.0,2014-02-06Final Data Sheet
RevisionHistory
IPP220N25NFD
Revision:2014-02-06,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2014-02-06 Release of final version
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