MAXIMUM RATINGS: (TC=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 1.0 A
Continuous Base Current IB 1.0 A
Power Dissipation PD 25 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance JC 7.0 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=80V 100 μA
ICEV V
CE=80V, VEB=1.5V 100 μA
ICEV V
CE=80V, VEB=1.5V, TC=150°C 1.0 mA
ICEO V
CE=40V 500 μA
IEBO V
EB=5.0V 1.0 mA
BVCEO I
C=100μA 80 V
VCE(SAT) I
C=1.0A, IB=100mA 0.6 V
VBE(SAT) I
C=1.0A, IB=100mA 1.3 V
VBE(ON) V
CE1.0V, IC=1.0A 1.3 V
hFE V
CE=1.0V, IC=50mA 40
hFE V
CE=1.0V, IC=500mA 20 100
hFE V
CE=1.0V, IC=1.0A 10
hfe V
CE=10V, IC=250mA, f=1.0kHz 25
fT V
CE=10V, IC=250mA, f=1.0MHz 3.0 MHz
Cob V
CB=10V, IE=0, f=100kHz 100 pF
2N4912
SILICON
NPN POWER TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4912 is a silicon
NPN power transistor manufactured by the epitaxial
base process, mounted in a hermetically sealed metal
case, designed for general purpose amplifier and
switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
R1 (2-September 2014)
www.centralsemi.com
2N4912
SILICON
NPN POWER TRANSISTOR
TO-66 CASE - MECHANICAL OUTLINE
MARKING:
FULL PART NUMBER
www.centralsemi.com
R1 (2-September 2014)
For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER,
which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms
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(001)
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when ordering (example: 2N2222A PBFREE).
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