TSM190N08
75V N-Channel Power MOSFET
Document Number:
DS_P0000033 1
Version: B15
TO
-
220
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(mΩ) I
D
(A)
75 4.2 @ V
GS
=10V 190
Features
● Advanced Trench Technology
● Low R
DS(ON)
4.2mΩ (Max.)
● Low gate charge typical @ 160nC (Typ.)
● Low Crss typical @ 300pF (Typ.)
Block Diagram
N-Channel MOSFET
Ordering Information
Part No. Package
Packing
TSM190N08CZ C0G TO-220 50pcs / Tube
Note: “G” denote for Halogen Free Product.
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
75 V
Gate-Source Voltage V
GS
±20 V
Continuous Drain Current
T
C
=25°C
I
D
190
A
T
C
=70°C 150
T
A
=25°C 17
T
A
=70°C 14
Drain Current-Pulsed Note 1 I
DM
600 A
Avalanche Current, L=0.3mH I
AS
, I
AR
113 A
Avalanche Energy, L=0.3mH E
AS
, E
AR
1900 mJ
Maximum Power Dissipation
T
C
=25°C
P
D
250
W
T
C
=70°C 160
T
A
=25°C 2
T
A
=70°C 1.3
Storage Temperature Range T
STG
-55 to +150 °C
Operating Junction Temperature Range T
J
-55 to +150 °C
* Limited by maximum junction temperature
Thermal Performance
Parameter Symbol Limit Unit
Thermal Resistance - Junction to Case RӨ
JC
0.5 °C/W
Thermal Resistance - Junction to Ambient RӨ
JA
62.5 °C/W
Notes: Surface mounted on FR4 board t ≤ 10sec
Definition
:
1. Gate
2. Drain
3. Source
TSM190N08
75V N-Channel Power MOSFET
Document Number:
DS_P0000033 2
Version: B15
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter Conditions Symbol
Min Typ Max
Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250uA BV
DSS
75 -- -- V
Drain-Source On-State Resistance V
GS
= 10V, I
D
= 90A R
DS(ON)
-- 3.4 4.2 mΩ
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250uA V
GS(TH)
2 3 4 V
Zero Gate Voltage Drain Current V
DS
= 75V, V
GS
= 0V I
DSS
-- -- 1 uA
Gate Body Leakage V
GS
= ±25V, V
DS
= 0V I
GSS
-- -- ±100
nA
Dynamic
Total Gate Charge V
DS
= 30V, I
D
= 90A,
V
GS
= 10V
Q
g
-- 160 --
nC
Gate-Source Charge Q
gs
-- 35 --
Gate-Drain Charge Q
gd
-- 40 --
Input Capacitance V
DS
= 30V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 8600 --
pF
Output Capacitance C
oss
-- 780 --
Reverse Transfer Capacitance C
rss
-- 300 --
Switching
Turn-On Delay Time V
GS
= 10V, V
DS
= 30V,
R
G
= 3.3Ω
t
d(on)
-- 25 --
nS
Turn-On Rise Time t
r
-- 40 --
Turn-Off Delay Time t
d(off)
-- 85 --
Turn-Off Fall Time t
f
-- 45 --
Drain-Source Diode Characteristics and Maximum Rating
Drain-Source Diode Forward
Voltage V
GS
=0V, I
S
=90A V
SD
- 0.8 1.3 V
Reverse Recovery Time I
S
= 90A, T
J
=25
o
C
dI/dt = 100A/us
t
fr
70 nS
Reverse Recovery Charge Q
fr
115 nC
Notes:
1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
2. R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins. R
ӨJC
is guaranteed by design while R
ӨCA
is determined by the user's board design. R
ӨJA
shown below for single device operation on FR-4 in still air
TSM190N08
75V N-Channel Power MOSFET
Document Number:
DS_P0000033 3
Version: B15
TO-220 Mechanical Drawing
TO-220 DIMENSION
DIM
MILLIMETERS INCHES
MIN MAX MIN MAX
A 10.000 10.500 0.394 0.413
B 3.740 3.910 0.147 0.154
C 2.440 2.940 0.096 0.116
D - 6.350 - 0.250
E 0.381 1.106 0.015 0.040
F 2.345 2.715 0.092 0.058
G 4.690 5.430 0.092 0.107
H 12.700 14.732 0.500 0.581
J 14.224 16.510 0.560 0.650
K 3.556 4.826 0.140 0.190
L 0.508 1.397 0.020 0.055
M 27.700 29.620 1.060 1.230
N 2.032 2.921 0.080 0.115
O 0.255 0.610 0.010 0.024
P 5.842 6.858 0.230 0.270
TSM190N08
75V N-Channel Power MOSFET
Document Number:
DS_P0000033 4
Version: B15
Notice
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