Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol Ty
p
Max
70 90
100 125
RθJL 63 80
°C-55 to 150
A
4.7
1.4 W
0.9
A
Maximum UnitsParameter
Maximum Junction-to-Ambient ASteady-State
Power Dissipation
TA=25°C PD
Junction and Storage Temperature Range
TA=70°C
°C/W
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V±12Gate-Source Voltage
Drain-Source Voltage 30
ID
5.7
Maximum Junction-to-Lead CSteady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient At ≤ 10s RθJA
°C/W
Pulsed Drain Current B25
TA=70°C
Continuous Drain
Current AF
TA=25°C
AO3400A
N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = 30V
ID =11A (VGS = 10V)
RDS(ON) < 14.5mΩ (VGS = 10V)
RDS(ON) < 18mΩ (VGS = 4.5V)
Features
VDS (V) = 30V
ID = 5.7A (VGS = 10V)
RDS(ON) < 26.5mΩ (VGS = 10V)
RDS(ON) < 32mΩ (VGS = 4.5V)
RDS(ON) < 48mΩ (VGS = 2.5V)
Rg,Ciss,Coss,Crss Tested
General Description
The AO3400A uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO3400A is
Pb-free (meets ROHS & Sony 259 specifications).
G
D
S
S
GD
TO-236
(SOT-23)
Top View
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO3400A
Symbol Min Typ Max Units
BVDSS 30 V
VDS=30V, VGS=0V 1
TJ=125°C 5
IGSS 100 nA
VGS(th) Gate Threshold Voltage 0.7 1 1.5 V
ID(ON) 25 A
22 26.5
TJ=125°C 31 38
25.4 32
34 48
gFS 26 S
VSD 0.72 1.0 V
IS2.0 A
Ciss 900 1100 pF
Coss 88 pF
Crss 65 pF
Rg0.95 1.5 Ω
Qg10 13 nC
Qgs 1.8 nC
Qgd 3.75 nC
tD(on) 3.2 ns
tr3.5 ns
tD(off) 21.5 ns
tf2.7 ns
trr 16.8 20 ns
Qrr 8nC
8.5
0.0
40 A
#DIV/0!
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
VGS=4.5V, ID=5A
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=5.7A, dI/dt=100A/us
Drain-Source Breakdown Voltage
On state drain current
ID=250uA, VGS=0V
VGS=4.5V, VDS=5V
VGS=10V, ID=5.7A
Reverse Transfer Capacitance
IF=5.7A, dI/dt=100A/us
VDS=VGS ID=250µA
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
IDSS Zero Gate Voltage Drain Current uA
VDS=0V, VGS= ±12VGate-Body leakage current
mΩ
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage IS=1A,VGS=0V
VDS=5V, ID=5.7A
VGS=2.5V, ID=3A
Turn-On Rise Time
Total Gate Charge
VGS=4.5V, VDS=15V, ID=5.7A
Gate Drain Charge
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Gate Source Charge
Gate resistance VGS=0V, VDS=0V, f=1MHz
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=2.6Ω,
RGEN=3Ω
Turn-Off Fall Time
Turn-On DelayTime
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C.
C. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F: The current rating is based on the t ≤ 10s thermal resistance rating.
Rev0: Apr. 2007
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO3400A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1uA
5
100 nA
0.7 1 1.5
25
VGS=10V, ID=8.5A 20 24
30.0 36.0
VGS=4.5V, ID=8.5A 23 29.0
VGS=2.5V, ID=5A 34.5 45
VDS=5V, ID=11A 26
0.72 1
Maximum Body-Diode Continuous Current 4.5
900 1100
88
65
0.95 1.5
QgVGS=10V, VDS=15V, ID=8.5A 10
1.8
3.75
VGS=10V, VDS=15V, RL=1.8
Ω
, RGEN=3
Ω
3.2
3.5
21.5
2.7
IF=8.5A, dI/dt=100A/
µ
s16.8
IF=8.5A, dI/dt=100A/
µ
s8
8.5
0.0
40 A
#DIV/0!
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN
G
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
5
10
15
20
25
30
35
40
012345
VDS (Volts)
Figure 1: On-Region Characteristics
ID (A)
VGS=2V
2.5V
3V
4.5V10V
0
4
8
12
16
20
0 0.5 1 1.5 2 2.5 3
VGS(Volts)
Figure 2: Transfer Characteristics
ID(A)
15
20
25
30
35
40
45
50
55
60
0 5 10 15 20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
IS (A)
25°C
125°C
0.6
0.9
1.2
1.5
1.8
-50 -25 0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
VGS=10V
ID=5.7A
ID=5A
VGS=4.5V
10
20
30
40
50
60
0246810
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°C
VDS=5V
V
GS
=2.5V
V
GS
=10V
ID=5.7A
25°C
125°C
V
GS
=4.5V
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO3400A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1uA
5
100 nA
0.7 1 1.5
25
VGS=10V, ID=8.5A 20 24
30 36
VGS=4.5V, ID=8.5A 23 29
VGS=2.5V, ID=5A 34.5 45
VDS=5V, ID=11A 26
0.72 1
Maximum Body-Diode Continuous Current 4.5
900 1100
88
65
0.95 1.5
QgVGS=10V, VDS=15V, ID=8.5A 10
1.8
3.75
VGS=10V, VDS=15V, RL=1.8
Ω
, RGEN=3
Ω
3.2
3.5
21.5
2.7
IF=8.5A, dI/dt=100A/
µ
s16.8
IF=8.5A, dI/dt=100A/
µ
s8
8.5
0.0
40 A
#DIV/0!
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
1
2
3
4
5
024681012
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS (Volts)
0
300
600
900
1200
1500
0 5 10 15 20 25 30
VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
0
10
20
30
40
0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power ( W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normalized Transient
Thermal Resistance
Coss
Crss
0.01
0.10
1.00
10.00
100.00
0.01 0.1 1 10 100
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
µ
s
1ms
1
DC
RDS(ON)
limi
ted
TJ(Max)=150°C
TA=25°C
10ms
1
00
m
s
VDS=15V
ID=5.7A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
T
on
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
100
µ
s
Alpha & Omega Semiconductor, Ltd. www.aosmd.com