NBB-312-T3 - RF Micro Devices, Inc. (RFMD)

4-25

Product Description

Ordering Information

Typical Applications

Features

Functional Block Diagram

RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT

Si Bi-CMOS SiGe HBT Si CMOS

InGaP/HBT GaN HEMT SiGe Bi-CMOS

Pin 1

Indicator

RF OUT Ground

RF IN

Ground

6 5

NBB-312

CASCADABLE BROADBAND

GaAs MMIC AMPLIFIER DC TO 12GHz

• Narrow and Broadband Commercial and

Military Radio Designs

• Linear and Saturated Amplifiers

• Gain Stage or Driver Amplifiers for

MWRadio/Optical Des igns (PTP/PMP/

LMDS/UNII/VSAT/WLAN/Cellular/DWDM)

The NBB-312 cascadable broadband InGaP/GaAs MMIC

amplifier is a low-cost, high-perf ormance solution for gen-

eral purpose RF and micro wa ve amplifi cat ion ne eds . This

50Ω gain block is based on a reliable HBT proprietary

MMIC design, providing unsurpassed performance for

small-signal applications. Designed with an external bias

resistor, the NBB-312 provides flexibility and stability. The

NBB-310 is packaged in a low-cost, surface-mount

ceramic package, providing ease of assembly for high-

volume tape-and-reel requirements. It is available in

either 1,000 or 3,000 piece-per-reel quantities. Connec-

torized evaluation board designs optimized for high fre-

quency are als o available for characterization purpo ses.

• Reliable, Low-Cost HBT Design

•12.5dB Gain

• High P1dB of +15.8dBm at 6GHz

• Single Power Supply Operation

•50Ω I/O Matched for High Frequenc y

Use

NBB-312 Cascadable Broadband GaAs MMIC Am plifier DC to

12GHz

NBB-312-T1 or -T3Tape & Reel, 1000 or 3000 Pieces (respectively)

NBB-312-E Fully Assembled Evaluation Board

NBB-X-K1 Extended Frequency InGaP Amp Designer’s Tool Kit

Rev A4 050414

Notes:

1. Solder pads are coplanar to within ±0.025 mm.

2. Lid will be centered relative to frontside metallization with a tolerance of ±0.13 mm.

3. Mark to include t wo characters and dot to reference pin 1.

2.39 min

2.59 max

Lid ID

1.70 min

1.91 max

2.94 min

3.28 ma x

Pin 1

Indicator

1.00 min

1.50 max

0.025 min

0.125 max

0.38 nom

Pin 1

Indicator

RF OUT

0.98 min

1.02 ma x

Ground

0.50 nom

All Dimensions in Millimeters 0.37 min

0.63 max

RF IN

Ground

Package Style: MPGA, Bowtie, 3x3, Ceramic

RoHS Compliant & Pb-Free Product

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NBB-312

Rev A4 050414

Absolute Maximum Ratings

Parameter Rating Unit

RF Input Power +20 dBm

Power Dissipation 350 mW

De vice Current 70 mA

Channel Temperature 200 °C

Operating Temperature -45 to +85 °C

Storage Temperature -65 to +150 °C

Exceeding any one or a combination of these limits may cause permanent damage.

Parameter Specification Unit Condition

Min. Typ. Max.

Overall VD=+5V, ICC=50mA, Z0=50Ω, TA=+25°C

Small Signal Power Gain, S21 12.5 12.9 dB f=0.1GHz to 1.0GHz

12.0 12.9 dB f=1.0GHz to 4.0GHz

11.4 11.7 dB f=4.0GHz to 8.0GHz

9.0 9.7 dB f=8.0GHz to 12.0GHz

Gain Flatness, GF +0.6 dB f=0.1GHz to 8.0GHz

Input VSWR 1.2:1 f=0.1GHz to 7.0GHz

1.65:1 f=7.0GHz to 10.0GHz

2.0:1 f=10.0GHz to 12.0G H z

Output VSWR 1.5:1 f=0.1GHz to 12.0GHz

Bandwidth, BW 11.0 GHz BW3 (3dB)

Output Power @

-1dB Compression, P1dB 14.9 dBm f=2.0GHz

15.8 dBm f=6.0GHz

15.0 dBm f=8.0GHz

12.0 dBm f=12.0GHz

Noise Figure, NF 4.9 dB f=3.0GHz

Third Order Intercept, IP3 +24.0 dBm f=2.0GHz

Reverse Isolation, S12 -15.6 dB f=0.1GHz to 12.0GHz

De vice Voltage, VD 4.7 5.0 5.3 V

Gain Temperature Coefficient,

δGT/δT-0.0015 dB/°C

MTTF versus Temperature

@ ICC=50mA

Case Temperature 85 °C

Junction Temperature 123 °C

MTTF >1,000,000 hours

Thermal Resistance

θJC 152 °C/W JTTCASE

–

VDICC

⋅

---------------------------θJC °CWatt⁄()=

Caution! ESD sensitive device.

RF Micro Devices believes the furnished information is correct and accurate

at the time of this printing. RoHS marking based on EUDirective2002/95/EC

(at time of this printing). However, RF Mi cro Devi ces reserves the right to

make changes to its product s without notice. RF Micro Devices does not

assume responsibility for the use of the described product(s).

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NBB-312

Rev A4 050414

Pin Function Description Interface Schematic

1GND

Ground connection. For best performance, keep traces physically short

and connect immediately to ground plane.

2GND

Same as pin 1.

3GND

Same as pin 1.

4RF IN

RF input pin. This pin is NOT internally DC blocked. A DC blocking

capacitor, suitable for the frequency of operation, should be used in

most applications. DC coupling of the input is not allowed, because this

will override the internal feedback loop and cause temperature instabil-

ity.

5GND

Same as pin 1.

6GND

Same as pin 1.

7GND

Same as pin 1.

8RF OUT

RF output and bias pin. Biasing is accomplished with an external series

resistor and choke inductor to VCC. The resistor is selected to set the

DC current into this pin to a desired level. The resistor value is deter-

mined by the following equation:

Care should also be taken in the resistor selection to ensure that the

current into the part never exceeds maximum datasheet operating cur-

rent over the planned operating temperature. This means that a resistor

between the supply and this pin is always required, even if a supply

near 8.0V is available, to provide DC feedback to prevent thermal run-

away. Alternatively, a constant current supply circuit may be imple-

mented. Because DC is present on this pin, a DC blocking capacitor,

suitable for the frequency of operation, should be used in most applica-

tions. The supply side of the bias network should also be well

bypassed.

9GND

Same as pin 1.

VCC VDEVICE

–()

ICC

-------------------------------------------

RF OUT

RF IN

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NBB-312

Rev A4 050414

Typical Bias Configuration

Application notes related to biasing circuit, device footprint, and ther mal considerations are available on request.

Application Notes

Bonding Temperature (Wedge or Ball)

It is recommended that the he ater bl ock temperature be set to 16 0°C±10°C.

Recommended Bias Resistor Values

Supply Voltage, VCC (V) 8 10 12 15 20

Bias Resistor, RCC (Ω) 60 100 140 200 300

C block

4 8

1,2,3

5,6,7,9

C block

In Out

L choke

(optional)

RCC

VCC

VD = 5 V

VDEVICE

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NBB-312

Rev A4 050414

Extended Frequency InGaP Amplifier Designer’s Tool Kit

NBB-X-K1

This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers.

Each tool kit contains the following.

• 5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers

• 5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers

• 2 Broadband Evaluation Boards and High Frequency SMA Connectors

• Broadband Bias In structions and Specification Summary Index for ease of operation

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NBB-312

Rev A4 050414

Tape and Reel Dimensions

All Dimensions in Millimeters

330 mm (13") REEL Micro-X, MPGA

SYMBOL SIZE (mm)ITEMS SIZE (inches)

FLANGE B

330 +0.25/-4.0

18.4 MAX

12.4 +2.0

Diameter

Thickness

Space Between Flange

13.0 +0.079/-0.158

0.724 MAX

0.488 +0.08

HUB

102.0 REF

13.0 +0.5/-0.2

1.5 MIN

Outer Diameter

Spindle Hole Diameter

Key Slit Width D20.2 MINKey Slit Diameter

4.0 REF

0.512 +0.020 /-0.008

0.059 MIN

0.795 MIN

PIN 1

User Direction of Feed

Ao = 3.6 MM

Bo = 3.6 MM

Ko = 1.7 MM

NOTES:

1. 10 sprocket hole pitch cumulative tolerance ±0.2.

2. Camber not to exceed 1 mm in 100 mm.

3. Material: PS+C

4. Ao an d Bo measure d on a plane 0.3 mm abov e the botto m of the poc ket.

5. Ko measured from a plane on the inside bottom of the pocket to the surface of the carrier.

6. Poc ket pos i tion relat i ve to sp rocket ho l e measured as true position of pocket , not poc ket hole.

All di mensions in mm

SECTI ON A-A

R0.3 MAX.

0.30 ± 0.05

5.50 ± 0.05

See Note 6 12.00

± 0.30

1.75

AR0.5 TY P

1.5 MIN.

Ao 8.0

2.00 ± 0.05

See Note 6

4.0

See Note 1 +0.1

-0.0

1.5

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NBB-312

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P1dB versus Frequency at 25°C

0.0

5.0

10.0

15.0

20.0

1.0 3.0 5.0 7.0 9.0 11.0 13.0 15.0

Fr eq uency (GHz)

P1dB (dBm)

POUT/Gain versus PIN at 6 GHz

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

16.0

18.0

20.0

-14.0 -9.0 -4.0 1.0 6.0

PIN (dBm)

POUT (dBm), Gain (dB)

Pout ( d Bm )

Gain (dB)

POUT/Gain versus PIN at 14 GHz

-6.0

-4.0

-2.0

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

-15.0 -10.0 -5.0 0.0 5.0 10.0

PIN (dBm)

POUT (dBm), Gain (dB)

Pout (dBm)

Gain (dB)

Third Order Intercept versus Frequency at 25°C

0.0

5.0

10.0

15.0

20.0

25.0

30.0

1.0 3.0 5.0 7.0 9.0 11.0 13.0 15.0

Fr equency (GHz)

Output IP3 (dBm)

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NBB-312

Rev A4 050414

Note: The s-parameter gain results shown below include device perfor mance as well as evaluation board and connector

loss variations. The insertion losses of the evaluation board and connectors are as follows:

1GHz to 4GHz=-0.06dB

5GHz to 9GHz=-0.22dB

10GHz to 14GHz=-0.50dB

15GHz to 20GHz=-1.08dB

S11 versus Frequency at +25°C

-40.0

-35.0

-30.0

-25.0

-20.0

-15.0

-10.0

-5.0

0.0

0.0 5.0 10.0 15.0

Fre quency (GHz)

S11 (dB)

S12 versus Frequency at +25°C

-20.0

-15.0

-10.0

-5.0

0.0

0.0 5.0 10.0 15.0

Fr equency (GHz)

S12 (dB)

S21 versus Frequency at +25°C

0.0

5.0

10.0

15.0

0.0 5.0 10.0 15.0

Fr equency (GHz)

S21 (dB)

S22 versus Frequency at +25°C

-40.0

-35.0

-30.0

-25.0

-20.0

-15.0

-10.0

-5.0

0.0

0.0 5.0 10.0 15.0

Fr equency (GHz)

S22 (dB)