73102TN (KT)/71598HA (KT)/3097KI/3135KI/D282KI (KOTO) No.1049-1/4
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-h
FE
, AF Amp Applications
Ordering number:ENN1049E
2SA1253/2SC3135
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
( ) : 2SA1253
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
Package Dimensions
unit:mm
2033A
[2SA1253/2SC3135]
Features
· High VEBO.
· Wide ASO and high durability against breakdown.
1 : Emitter
2 : Collector
3 : Base
SANYO : SPA
˚C
˚C
* : The 2SA1253/2SC3135 are classified by 1mA hFE as follows : Continued on next page.
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC 06)–(V
egatloVrettimE-ot-rotcelloCV
OEC 05)–(V
egatloVesaB-ot-rettimEV
OBE 51)–(V
tnerruCrotcelloCI
C002)–(Am
)esluP(tnerruCrotcelloCI
PC 004)–(Am
noitapissiDrotcelloCP
C052Wm
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
knaRRSTU
hEF 002ot001082ot041004ot002065ot082
4.0
0.4
0.5
0.4
0.6
15.0 3.0
1.8
123
2.2
0.4
1.3
1.3
3.0
3.8
0.7
0.7
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC VBC I,V04)–(= E0=1.0)–(Aµ
tnerruCffotuCrettimEI
OBE VBE I,V01)–(= C0=1.0)–(Aµ
niaGtnerruCCDh
EF VEC I,V6)–(= CAm1)–(=*001*065
tcudorPhtdiwdnaB-niaGf
TVEC I,V6)–(= CAm1)–(=001zHM
ecnaticapaCtuptuOesaBnommoCboCV
BC zHM1=f,V6)–(= )8.3( 5.2 Fp
No.1049-2/4
2SA1253/2SC3135
Continued from preceding page.
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
egatloVnoitarutaSrettimE-ot-rotcelloCV
)tas(EC ICI,Am05)–(= BAm5)–(= )2.0–( 51.0 5.0)–(V
egatloVnwodkaerBesaB-ot-rotcelloCV
OBC)RB( ICI,Aµ01)–(= E0=06)–(V
egatloVnwodkaerBrettimE-ot-rotcelloCV
OEC)RB( ICR,Am1)–(= EB =∞05)–(V
egatloVnwodkaerBesaB-ot-rettimEV
OBE)RB( IEI,Aµ01)–(= C0=51)–(V
ITR03091
IC -- VCE
0
--
0.2
--
0.4
--
0.6
--
0.8
--
1.0
0
--
10
--
20
--
30
--
40
--
50
IB=0
--200µA
--150µA
--100µA
--50µA
--250µA
2SA1253
From top
--500µA
--450µA
--400µA
--350µA
--300µA
ITR03093
IC -- VCE
0
--
10
--
20
--
30
--
40
--
50
0
--
4
--
8
--
12
--
16
--
20
IB=0
--70µA
2SA1253
ITR03092
IC -- VCE
0 0.2 0.4 0.6 0.8 1.0
0
10
20
30
40
50
IB=0
200µA
150µA
100µA
50µA
250µA
2SC3135
From top
500µA
450µA
400µA
350µA
300µA
--60µA
--50µA
--40µA
--30µA
--20µA
--10µA
ITR03095
IC -- VBE
0
--
0.4
--
0.8
--
1.2
--
1.6
0
--
20
--
40
--
60
--
80
--
100
2SA1253
VCE=--6V
Pulse
ITR03096
IC -- VBE
0 0.4 0.8 1.2 1.6
0
20
40
60
80
100
2SC3135
VCE=6V
Pulse
ITR03094
IC -- VCE
01020304050
0
4
8
12
16
20
IB=0
70µA
2SC3135
60µA
50µA
40µA
30µA
20µA
10µA
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
Base-to-Emitter Voltage, VBE –V
Collector Current, IC–mA
Base-to-Emitter Voltage, VBE –V
No.1049-3/4
2SA1253/2SC3135
ITR03103
VCE(sat) -- IC
57
--
10 2
--
1.0 23357
--
100 2
7
--
1.0 23 357
--
10 57
--
100
22
--
0.1
7
7
--
1.0
5
3
3
5
3
2
2
10
7
100
5
3
7
1000
5
3
2
2
ITR03099
fT -- IC
2SA1253
VCE=
--
6V
Pulse
7
--
1.0 23 3557
--
10 57
--
100
2
1.0
7
10
5
3
3
2
2
ITR03101
Cob -- VCB
2SA1253
f=
1MHz
2SA1253
IC / IB=
10
ITR03104
VCE(sat) -- IC
5710 2
1.0 23357
100 2
0.1
7
7
1.0
5
3
3
5
3
2
2
2SC3135
IC / IB=
10
71.0 23 3557
10 57
100
2
1.0
7
10
5
3
3
2
2
ITR03102
Cob -- VCB
2SC3135
f=
1MHz
71.0 23 35710 57100
22
10
7
100
5
3
7
1000
5
3
2
2
ITR03100
fT -- IC
2SC3135
VCE=6V
Pulse
1000
100
ITR03097
hFE -- IC
25 25 2 25
--
0.1
--
1.0
--
10
--
100
2
3
5
7
2
3
5
7
2SA1253
VCE=
--
6V
Pulse
1000
100
ITR03098
hFE -- IC
25 25 2 25
0.1 1.0 10 100
2
3
5
7
2
3
5
7
2SC3135
VCE=6V
Pulse
Common Enitter DC Current Gain, hFE
Collector Current, IC–mA
Common Enitter DC Current Gain, hFE
Collector Current, IC–mA
Gain-Bandwidth Product, fT– MHz
Collector Current, IC–mA
Gain-Bandwidth Product, fT– MHz
Collector Current, IC–mA
Common Base Output Capacitance, Cob – pF
Collector-to-Base Voltage, VCB -- V
Common Base Output Capacitance, Cob – pF
Collector-to-Base Voltage, VCB -- V
Collector Current, IC–mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) – V
Collector Current, IC–mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) – V
PS No.1049-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2002. Specifications and information herein are subject to
change without notice.
2SA1253/2SC3135
0 20 40 60 80 100 120 140 160
0
50
100
250
150
200
300
350
PC -- Ta
ITR03106
2SA1253 / 2SC3135
2SA1253 / 2SC3135
ITR03105
A S O
DC operation
10ms
100ms
1.0 10
2
3
5
7
2
3
5
3
5
23 5757 100
7
235
10
7
7
2
100
ICP=400mA
IC=200mA
Collector Dissipation, P
C
–mW
Ambient Temperature, Ta – ˚C
For PNP, minus sign is omitted.
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA