Rugged Power MOSFETs IRF720R, IRF721R IRF722R, IRF723R File Number 1991 Avalanche Energy Rated N-Channel Power MOSFETs 2.5A and 3.0A, 350V-400V tps(on) = 1.8N and 2.50 TERMINAL DIAGRAM Features: @ Single pulse avalanche energy rated D SOA is power-dissipation limited i Nanosecond switching speeds @ Linear transfer characteristics High input impedance S 9208-42658 -CHA The IRF720R, IRF721R, |RF722R and IRF723R are ad- N-CHANNEL ENHANCEMENT MODE vanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel en- hancement-mode silicon-gate power field-effect transis- tors designed for applications such as switching regulators, ; switching converters, motor drivers, relay drivers, and driv- SOURCE ers for high-power bipolar switching transistors requiring DRAIN high speed and low gate-drive power. These types can be (FLANGE) * O iS DRAIN operated directly from integrated circuits. ee The IRF-types are supplied in the JEDEC TO-220AB plastic [Fr package. TOP VIEW GATE 92CS-39528 JEDEC TO-220AB TERMINAL DESIGNATION Absolute Maximum Ratings P: ts IRF720R IRF721R IRF722R IRF723R Units Vos Drain - Source Voltage @ 400 350 400 350 Vv Voar Drain - Gate Voltage (Res = 20 KQ) @ 400 350 400 350 Vv lo @ Te = 25C Continuous Drain Current 3.0 3.0 25 2.5 A lp @ Te = 100C Continuous Drain Current 2.0 2.0 1.5 15 A lpm Pulsed Drain Current 12 12 10 410 A Ves Gate - Source. Voltage +20 Vv Pp @ Tc = 25C Max. Power Dissipation 40 (See Fig. 14) Ww Linear Derating Factor 0.32 (See Fig. 14) Ww/C Eas Single Pulse Avalanche Energy Rating @ 190 mj ve Sporting Junction ong os 55 0 150 c Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-137Rugged Power MOSFETs IRF720R, IRF721R IRF722R, IRF723R Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) Par ts Type Min. Typ. | Max. | Units Test Conditions BVoss_ Drain - Source Breakdown Voltage IRF720R = IRF722R 400 _ _ v Vas = OV IRF721R _ IRF723R | 35 _ _ Ip = 250nA Vestn Gate Threshold Voltage ALL 2.0 = 4.0 Vos = Ves, In = 250p A less Gate-Source Leakage Forward ALL _ = 500 nA Ves = 20V less Gate-Source Leakage Reverse ALL _ = -500 nA Ves = -20V loss Zero Gate Voltage Drain Current = _ 250 uA Vos = Max. Rating, Ves = OV ALL [| 1000 | wA | Vos = Max. Rating x 0.8, Vas = OV, To = 125C (bien On-State Drain Current @ IRF720R IRF721R| 29 | - A Vos > lntom X Rostom max. Ves = 10V IRF722R iRF723R| 25 | = A Rosen Static Drain-Source On-State (RF720R| 15 18 Q Resistance ee Vas = 10V, Ip = 1.5A a wme7zan| ~ | 18 | 25 | 2 ts Forward Transconductance ALL 1.0 2.0 = S()_| Vos > lorem x Rostonimax, Ip = 4.5A Cis Input Capacitance ALL - 450 - PF | Vos = OV, Vos = 25V, f= 1.0 MHz Coss Output Capacitance ALL _ 100 pF See Fig. 10 Crs Reverse Transfer Capacitance ALL 20 _ pF& taton Turn-On Delay Time ALL _ 20 40 ns Vopo = 0.5BVoss, lo = 1.5A, Zo = 500 t Rise Time ALL _ 25 50 ns See Fig. 17 tao __ Turn-Off Delay Time ALL 50 100 ns__| (MOSFET switching times are essentially tr Fall Time ALL _ 25 50 ns independent of operating temperature.) Q, Total Gate Charge ALL _ 12 15 nc Ves = 10V, fp = 4.0A, Vos = 0.8V Max. Rating. (Gate-Source Pius Gate-Drain) See Fig. 18 for test circuit. (Gate charge is Qgs Gate-Source Charge ALL 6.0 nc essentially independent of operating RA Tort temperature.) Qea Gate-Drain (Miller) Charge ALL 6.0 _ ac Lo Internal Drain Inductance _ 3.5 nH Measured from the Modified MOSFET contact screw on tab symbol! showing the to center of die. internal device ALL 45 = nH | Measured from the inductances. drain lead, 6mm (0.25 in.) from package to Lo center of die. Ls internal Source inductance ALL _ 75 _ nH Measured from the & Ls source fead, 6mm (0.25 in.) from s package to source secs a2ees bonding pad. Thermal Resistance RiJC Junction-to-Case ALL _ _ 3.12 | C/W RinCS Case-to-Sink ALL 1.0 _ C/W | Mounting surface flat, smooth, and greased. RnJA Junction-to-Ambient ALL _ 80 C/W | Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRF720R;} _ 3.0 A Modified MOSFET symbol {Body Diode) IRF721R . showing the integral o IRF722R A reverse P-N junction rectifier. IRF723R | ~ | 25 Isma Pulse Source Current IRF720R | _ _ 12 A 5 (Body Diode) IRF721R IRF722R secs s203e iRnF723R| ~ | | 12 | A Vso Diode Forward Voltage IRF720R = 9RO _ = (RF721R _ _- 1.6 v Te = 25C, Is = 3.0A, Vos = OV IRF722R _ _ _ iIRF723R | _ 1.5 Vv Te = 25C, Is = 2.5A, Vas = OV te Reverse Recovery Time ALL 450 _ ns Ty = 150C, if = 3.0A, die/dt = 100A/zs Qar Reverse Recovered Charge ALL _ 3.1 _ uC Ts = 150C, ie = 3.0A, die/dt = 100A/us ton Forward Turn-on Time ALL intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + Lo. Ts = 25C to 150C. @ Pulse Test: Pulse width < 300us, Duty Cycle < 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal impedance Curve (Fig. 5). @ Voo = 50V, starting Ty = 25C, L = 31 MH, Res = 500), Ipeak = 3.3A. See figures 15, 16. 6-138Rugged Power MOSFETs IRF720R, IRF721R IRF722R, IRF723R 0 ps PULSE boy 1 Vos >!o(on) * Ros(on) max. 2 g : 2 2 i . S z z = = 3 2 z z < < S 3 s Ss 0 100 200 300 a 1 2 3 5 6 Vos. ORAIN-TO-SQUACE VOLTAGE (VOLTS} Vgs. GATE.TO SOURCE VOLTAGE (VOLTSt Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics OPERATION tN THIS AREA IS LIMITED 8Y Roston) a 5 = = 2 z = 2 z z 5 = = = = = = 3 3 = z = =< a 4 2 2 Tes Ty= 180C MAK Rene * 3.12C/W duu IRF720R, 2R 0 4 12 16 20 10 2 5 0 20 50 100 200 = 800 Vas, DRAIN-TO-SQURCE VOLTAGE IVOLTSI Vg. ORAIN-TO-SOUACE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area a s - 2 ny 2 7 1 DUTY FACTOR, B= z THERMAL IMPEDANCE) 2. PER UNIT BASE = Rinyc = 3.12 DEG. CW 2 2 g SINGLE PULSE 2 5 8 3. Tym - Te = Pom Zenit) Zengclt/Renge, NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT} 0.0) oS 2 5 wt 2 5 ys 2 5 we? 2 5 ot 2 5 10 2 5 0 414, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 Maximum Effective Transient Thermal impedance, Junction-to-Case Vs. Pulse Duration 6-139Rugged Power MOSFETs IRF720R, IRF721R IRF722R, IRF723R 6-140 80 us PULSE f ( Vos > 'oton) * Rasion) 45, THANSCONDU CTANCE (SIEMENS) Q t 2 3 4 5 Ig. DRAWN CURRENT (AMPERES Fig. 6 Typical Transconductance Vs. Drain Current BV pss. DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED} C, CAPACITANCE (pF) -40 0 40 80 120 Ty, JUNCTION TEMPERATURE (C) Fig. 8 Breakdown Voltage Vs. Temperature 1900 Ves-a | - t= 1 MHz s00 tin + Gq Cyd, Cop SHORTED Criss * Cog . Cys Cy Com = Cts * Coe Cod 800 = Cag* Coa 7400 200 Qo 1 20 38 40 Vos. DRAIN-TO-SQURCE VOLTAGE (VOLTS) 50 Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage lor. REVERSE DRAIN CURRENT (AMPERES) y= 25C Q 1 2 3 4 Vgp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 7 Typical Source-Drain Diode Forward Voltage 22 o ~ ry Rosjon). ORAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) e & 02 -40 Qo 40 80 120 Ty, JUNCTION TEMPERATURE (C) Fig. 9 Normalized On-Resistance Vs. Temperature = BOV. Vpg = 200V Vos = Vgg. GATE TO-SOURCE VOLTAGE {VOLTS} ips 4a FOR TEST CIRCUIT SEE FIGUAE 18 a 4 a Pd 16 20 Gy, TOTAL GATE CHARGE (nC) Fig. 11 Typical Gate Charge Vs. Gate-to-Source VoltageRugged Power MOSFETs Rosion) MEASURED WITH CURRENT PULSE OF 2.0 us DURATION. INITIAL Ty = 25C. (HEATING EFFECT OF 2.0 us PULSE I$ MINIMAL) w Ves=) A N Roston). QRAIN-TO-SOURCE ON RESISTANCE {QHMS} ry a 2 4 6 8 10 Ip. ORAIN CURRENT (AMPERES; Fig. 12 Typical On-Resistance Vs. Drain Current 40 Pp, POWER DISSIPATION (WATTS) ~ o 20 4c 6a IRF720R, IRF721R IRF722R, IRF723R ip, ORAIN CURRENT (AMPERES) 28 50 75 100 126 150 Tc, CASE TEMPERATURE (C) Fig. 13 Maximum Drain Current Vs. Case Temperature 80 100 120 140 Tc, CASE TEMPERATURE (C) Fig. 14 Power Vs. Temperature Derating Curve Vos L VARY tp TO OBTAIN ouT REQUIRED PEAK I. Res Veg t10V Fe tL 0.012 92CS- 42659 Fig. 15 Unclamped Energy Test Circuit ADJUST Ry. TO OBTAIN SPECIFIED tp PULSE GENERATOR OUT. r TO SCOPE 0.012 HIGH FREQUENCY SHUNT Fig. 17 Switching Time Test Circuit + Yoo 92CS- 42660 Fig. 16 Unclamped Energy Waveforms Vos CURRENT {ISOLATED REGULATOR SUPPLY) SAME TYPE = aut lev o2ut sey BATTERY | [ 15 mA 0 - VO -VYos CURRENT = CURRENT SHUNT SHUNT Fig. 18 Gate Charge Test Circuit 6-141