P0300SAMCRP - Teccor Electronics, Inc.

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

2Data Sheets

This section presents complete electrical specifications for Teccor’s SIDACtor solid state

overvoltage protection devices.

DO-214AA Package Symbolization. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3

DO-214AA

SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-4

MicroCapacitance (MC) SC SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-6

MicroCapacitance (MC) SA SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-8

High Surge Current (D-rated) SIDACtor Device. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-10

Compak Two-chip SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-12

Ethernet/10BaseT/100BaseT Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-14

TO-92

SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-16

MicroCapacitance (MC) SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-18

Modified MS-013 (Six-pin Surface Mount)

Balanced Three-chip SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-20

Multiport SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-22

Multiport Balanced SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-24

Modified TO-220

SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-26

Two-chip SIDACtor Device. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-28

Two-chip MicroCapacitance (MC) SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-30

Balanced Three-chip SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-32

Balanced Three-chip MicroCapacitance (MC) SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . 2-34

LCAS

LCAS Asymmetrical Multiport Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-36

LCAS Asymmetrical Discrete Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-38

SIP Hybrid Overvoltage and Overcurrent Protector

Four-Port Balanced Three-chip Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-40

Four-Port Longitudinal Two-chip Protector. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-42

Four-Port Metallic Line Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-44

SLICs

Fixed Voltage SLIC Protector. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-46

Twin SLIC Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-48

Multiport SLIC Protector. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-50

Battrax

Battrax SLIC Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-52

Battrax Dual Negative SLIC Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-54

Battrax Dual Positive/Negative SLIC Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-56

Battrax Quad Negative SLIC Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-58

CATVs

CATV and HFC SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-60

High Surge Current SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-62

CATV Line Amplifiers/Power Inserters SIDACtor Device. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-64

TeleLink Fuse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-66

Acronyms: CATV Community Antenna TV

HFC Hybrid Fiber Coax

LCAS Line Circuit Access Switch

SIP Single In-line Package

SLIC Subscriber Line Interface Circuit

DO-214AA Package Symbolization

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

DO-214AA Package Symbolization

Note: Date code is located below the symbolized part number.

Part Number Part Number Part Number

Catalog Symbolized Catalog Symbolized Catalog Symbolized

P0080SA P-8A P1100SB P11B P2300SD P23D

P0080SB P-8B P1100SC P11C P2300SC MC P23CM

P0080SC P-8C P1100SD P11D P2500SA P25A

P0080SD P-8D P1100SC MC P11CM P2500SB P25B

P0080SC MC P-8CM P1101CA2 P02A P2500SC P25C

P0300SA P03A P1101SA P01A P2500SD P25D

P0300SB P03B P1101SC P01C P2500SC MC P25CM

P0300SC P03C P1200SA P12A P2600SA P26A

P0300SD P03D P1200SB P12B P2600SB P26B

P0300SC MC P03CM P1200SC P12C P2600SC P26C

P0640SA P06A P1200SD P12D P2600SD P26D

P0640SB P06B P1200SC MC P12CM P2600SC MC P26CM

P0640SC P06C P1300SA P13A P3002CB P30B

P0640SD P06D P1300SB P13B P3002SB P30B

P0640SC MC P06CM P1300SC P13C P3100SA P31A

P0641CA2 P62A P1300SD P13D P3100SB P31B

P0641SA P61A P1300SC MC P13CM P3100SC P31C

P0641SC P61C P1500SA P15A P3100SD P31D

P0720SA P07A P1500SB P15B P3100SC MC P31CM

P0720SB P07B P1500SC P15C P3500SA P35A

P0720SC P07C P1500SD P15D P3500SB P35B

P0720SD P07D P1500SC MC P15CM P3500SC P35C

P0720SC MC P07CM P1800SA P18A P3500SD P35D

P0721CA2 P72A P1800SB P18B P3500SC MC P35CM

P0721SA P71A P1800SC P18C P6002CB P60B

P0721SC P71C P1800SD P18D B1100CA B10A

P0900SA P09A P1800SC MC P18CM B1100CC B10C

P0900SB P09B P2000SA P20A B1160CA B16A

P0900SC P09C P2000SB P20B B1160CC B16C

P0900SD P09D P2000SC P20C B1200CA B12A

P0900SC MC P09CM P2000SD P20D B1200CC B20C

P0901CA2 P92A P2000SC MC P20CM B2050CA B20A

P0901SA P91A P2300SA P23A B2050CC B20C

P0901SC P91C P2300SB P23B

P1100SA P11A P2300SC P23C

SIDACtor Device

+1 972-580-7777 SIDACtor® Data Book and Design Guide

SIDACtor Device

DO-214AA SIDACtor solid state protection devices protect telecommunications equipment

such as modems, line cards, fax machines, and other CPE.

SIDACtor devices are used to enable equipment to meet various regulatory requirements

including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA/EIA-IS-968

(formerly known as FCC Part 68).

* For individual “SA”, “SB”, and “SC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• VDRM is measured at IDRM.

• VS is measured at 100 V/µs.

• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value for “SA” and “SB” product. “SC” capacitance is

approximately 2x the listed value. The off-state capacitance of the P0080SB is equal to the “SC” device.

Electrical Parameters

Part

Number *

VDRM

Volts

IDRM

µAmps

mAmps

Amps

mAmps

P0080S_ 6 25 4 5 800 2.2 50 100

P0300S_ 25 40 4 5 800 2.2 50 110

P0640S_ 58 77 4 5 800 2.2 150 50

P0720S_ 65 88 4 5 800 2.2 150 50

P0900S_ 75 98 4 5 800 2.2 150 50

P1100S_ 90 130 4 5 800 2.2 150 40

P1300S_ 120 160 4 5 800 2.2 150 40

P1500S_ 140 180 4 5 800 2.2 150 40

P1800S_ 170 220 4 5 800 2.2 150 30

P2300S_ 190 260 4 5 800 2.2 150 30

P2600S_ 220 300 4 5 800 2.2 150 30

P3100S_ 275 350 4 5 800 2.2 150 30

P3500S_ 320 400 4 5 800 2.2 150 30

Surge Ratings

Series

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

B 250 250 150 100 80 30 500

C 500 400 200 150 100 50 500

SIDACtor Device

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

DO-214AA TJOperating Junction Temperature Range -40 to +150 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 90 °C/W

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (T

) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

MicroCapacitance (MC) SC SIDACtor Device

+1 972-580-7777 SIDACtor® Data Book and Design Guide

MicroCapacitance (MC) SC SIDACtor Device

The DO-214AA SC MC SIDACtor series is intended for applications sensitive to load

values. Typically, high speed connections require a lower capacitance. CO values for the

MicroCapacitance device are 40% lower than a standard SC part.

This MC SIDACtor series is used to enable equipment to meet various regulatory

requirements including GR 1089, IEC 60950, UL 60950, and TIA/EIA-IS-968 (formerly

known as FCC Part 68). Contact factory regarding ITU K.20, K.21, and K.45.

* For surge ratings, see table below.

** Contact factory for release date.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• VDRM is measured at IDRM.

• VS is measured at 100 V/µs.

• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured at 1 MHz with a 2 V bias.

Electrical Parameters

Part

Number *

VDRM

Volts

IDRM

µAmps

mAmps

Amps

mAmps

P0080SC MC ** 6 25 4 5 800 2.2 50 55

P0300SC MC ** 25 40 4 5 800 2.2 50 35

P0640SC MC 58 77 4 5 800 2.2 150 60

P0720SC MC 65 88 4 5 800 2.2 150 60

P0900SC MC 75 98 4 5 800 2.2 150 60

P1100SC MC 90 130 4 5 800 2.2 150 50

P1300SC MC 120 160 4 5 800 2.2 150 50

P1500SC MC 140 180 4 5 800 2.2 150 50

P1800SC MC 170 220 4 5 800 2.2 150 40

P2300SC MC 190 260 4 5 800 2.2 150 40

P2600SC MC 220 300 4 5 800 2.2 150 40

P3100SC MC 275 350 4 5 800 2.2 150 40

P3500SC MC 320 400 4 5 800 2.2 150 40

Surge Ratings

Series

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

C 500 400 200 150 100 50 500

MicroCapacitance (MC) SC SIDACtor Device

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

DO-214AA TJOperating Junction Temperature Range -40 to +150 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 90 °C/W

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (T

) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

MicroCapacitance (MC) SA SIDACtor Device

+1 972-580-7777 SIDACtor® Data Book and Design Guide

MicroCapacitance (MC) SA SIDACtor Device

The DO-214AA SA MC SIDACtor series is intended for applications sensitive to load

values. Typically, high speed connections require a lower capacitance. CO values for the

MicroCapacitance device are 40% lower than a standard SA part.

This MC SIDACtor series is used to enable equipment to meet various regulatory

requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA/

EIA-IS-968 (formerly known as FCC Part 68).

* For surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• VDRM is measured at IDRM.

• VS is measured at 100 V/µs.

• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured at 1 MHz with a 2 V bias.

Electrical Parameters

Part

Number *

VDRM

Volts

IDRM

µAmps

mAmps

Amps

mAmps

P0080SA MC 6 25 4 5 800 2.2 50 45

P0300SA MC 25 40 4 5 800 2.2 50 25

Surge Ratings

Series

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

MicroCapacitance (MC) SA SIDACtor Device

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

DO-214AA TJOperating Junction Temperature Range -40 to +150 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 90 °C/W

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (T

) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

High Surge Current (D-rated) SIDACtor Device

+1 972-580-7777 SIDACtor® Data Book and Design Guide

High Surge Current (D-rated) SIDACtor Device

DO-214AA SIDACtor solid state protection devices with a D surge rating protect

telecommunications equipment such as modems, line cards, fax machines, and other CPE.

These SIDACtor devices withstand simultaneous surges incurred in GR 1089 lightning

tests. (See "First Level Lightning Surge Test" on page 4-5.) Surge ratings are twice that of a

device with a C surge rating. This allows a discrete surface mount version of Teccor’s

patented “Y” configuration. (US Patent 4,905,119)

SIDACtor devices are used to enable equipment to meet various regulatory requirements

including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA/EIA-IS-968

(formerly known as FCC Part 68).

* For surge ratings, see table below.

** Contact factory for release date.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• VDRM is measured at IDRM.

• VS is measured at 100 V/µs.

• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value.

Electrical Parameters

Part

Number *

VDRM

Volts

IDRM

µAmps

mAmps

Amps

mAmps

P0080SD ** 6 25 4 5 800 2.2 50 200

P0300SD ** 25 40 4 5 800 2.2 50 220

P0640SD ** 58 77 4 5 800 2.2 50 100

P0720SD ** 65 88 4 5 800 2.2 50 100

P0900SD ** 75 98 4 5 800 2.2 50 100

P1100SD 90 130 4 5 800 2.2 50 80

P1300SD 120 160 4 5 800 2.2 50 80

P1500SD 140 180 4 5 800 2.2 50 80

P1800SD 170 220 4 5 800 2.2 50 60

P2300SD 190 260 4 5 800 2.2 50 60

P2600SD 220 300 4 5 800 2.2 50 60

P3100SD 275 350 4 5 800 2.2 50 60

P3500SD 320 400 4 5 800 2.2 50 60

Surge Ratings

Series

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

D 1000 800 400 300 200 50 1000

High Surge Current (D-rated) SIDACtor Device

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

DO-214AA TJOperating Junction Temperature Range -40 to +150 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 90 °C/W

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (T

) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Compak Two-chip SIDACtor Device

+1 972-580-7777 SIDACtor® Data Book and Design Guide

Compak Two-chip SIDACtor Device

The modified DO-214AA SIDACtor device provides low-cost, longitudinal protection.

SIDACtor devices are used to enable equipment to meet various regulatory requirements

including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA/EIA-IS-968

(formerly known as FCC Part 68).

* For surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• VDRM is measured at IDRM.

• VS is measured at 100 V/µs.

• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured between Pins 1-3 at 1 MHz with a 2 V bias.

• UL 60950 creepage requirements must be considered.

Electrical Parameters

Part

Number

VDRM

Volts

VDRM

Volts

Volts VT

Volts

IDRM

µAmps

mAmps

Amps

mAmps

Pins1-2, 2-3 Pins 1-3 Pins 1-3

P3002CA 140 180 280 360 4 5 800 1 120 15

P6002CA 275 350 550 700 4 5 800 1 120 15

Surge Ratings

Series

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

(T)

(R)

(G)

Compak Two-chip SIDACtor Device

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

Modified DO-214AA TJOperating Junction Temperature Range -40 to +150 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 85 °C/W

Pin 3

Pin 1

Pin 2

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (T

) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Ethernet/10BaseT/100BaseT Protector

+1 972-580-7777 SIDACtor® Data Book and Design Guide

Ethernet/10BaseT/100BaseT Protector

The DO-214AA SIDACtor Ethernet protection series is intended for applications sensitive to

load values. Typically, high speed connections require a lower capacitance. CO values are

40% lower than standard devices.

SIDACtor devices are used to enable equipment to meet various regulatory requirements

including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA/EIA-IS-968

(formerly known as FCC Part 68).

* For surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• VDRM is measured at IDRM.

• VS is measured at 100 V/µs.

• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured at 1 MHz with a 2 V bias.

** Contact factory for release date of B-rated devices.

Electrical Parameters

Part

Number *

VDRM

Volts

IDRM

µAmps

mAmps

Amps

mAmps

P0642S_ 58 77 4 5 800 2.2 150 25

P0722S_ 65 88 4 5 800 2.2 150 25

P0902S_ 75 98 4 5 800 2.2 150 25

P1102S_ 90 130 4 5 800 2.2 150 20

P3002S_ 280 360 4 5 800 2.2 150 15

Surge Ratings

Series

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

B** 250 250 150 100 80 30 500

Ethernet/10BaseT/100BaseT Protector

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

DO-214AA TJOperating Junction Temperature Range -40 to +150 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 90 °C/W

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (T

) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

SIDACtor Device

+1 972-580-7777 SIDACtor® Data Book and Design Guide

SIDACtor Device

TO-92 SIDACtor solid state protection devices protect telecommunications equipment such

as modems, line cards, fax machines, and other CPE.

SIDACtor devices are used to enable equipment to meet various regulatory requirements

including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA/EIA-IS-968

(formerly known as FCC Part 68)

* For individual “EA”, “EB”, and “EC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• VDRM is measured at IDRM.

• VS is measured at 100 V/µs.

• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value for “EA” and “EB” product. “EC” capacitance is

approximately 2x the listed value. The off-state capacitance of the P0080EB is equal to the “EC” device.

Electrical Parameters

Part

Number *

VDRM

Volts

IDRM

µAmps

mAmps

Amps

mAmps

P0080E_ 6 25 4 5 800 2.2 50 100

P0300E_ 25 40 4 5 800 2.2 50 110

P0640E_ 58 77 4 5 800 2.2 150 50

P0720E_ 65 88 4 5 800 2.2 150 50

P0900E_ 75 98 4 5 800 2.2 150 50

P1100E_ 90 130 4 5 800 2.2 150 40

P1300E_ 120 160 4 5 800 2.2 150 40

P1500E_ 140 180 4 5 800 2.2 150 40

P1800E_ 170 220 4 5 800 2.2 150 30

P2300E_ 190 260 4 5 800 2.2 150 30

P2600E_ 220 300 4 5 800 2.2 150 30

P3100E_ 275 350 4 5 800 2.2 150 30

P3500E_ 320 400 4 5 800 2.2 150 30

Surge Ratings

Series

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

B 250 250 150 100 80 30 500

C 500 400 200 150 100 50 500

SIDACtor Device

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

TO-92

TJOperating Junction Temperature Range -40 to +150 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 90 °C/W

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (T

) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

MicroCapacitance (MC) SIDACtor Device

+1 972-580-7777 SIDACtor® Data Book and Design Guide

MicroCapacitance (MC) SIDACtor Device

The TO-92 MC SIDACtor series is intended for applications sensitive to load values.

Typically, high speed connections require a lower capacitance. CO values for MC devices

are 40% lower than a standard EC part.

This MC SIDACtor series is used to enable equipment to meet various regulatory

requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA/

EIA-IS-968 (formerly known as FCC Part 68) without the need of series resistors.

* For surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• VDRM is measured at IDRM.

• VS is measured at 100 V/µs.

• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured at 1 MHz with a 2 V bias.

Electrical Parameters

Part

Number *

VDRM

Volts

IDRM

µAmps

mAmps

Amps

mAmps

P0640EC MC 58 77 4 5 800 2.2 150 60

P1500EC MC 140 180 4 5 800 2.2 150 50

P2600EC MC 220 300 4 5 800 2.2 150 40

P3100EC MC 275 350 4 5 800 2.2 150 40

Surge Ratings

Series

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

C 500 400 200 150 100 50 500

MicroCapacitance (MC) SIDACtor Device

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

TO-92

TJOperating Junction Temperature Range -40 to +150 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 90 °C/W

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (T

) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Balanced Three-chip SIDACtor Device

+1 972-580-7777 SIDACtor® Data Book and Design Guide

Balanced Three-chip SIDACtor Device

This balanced protector is a surface mount alternative to the modified TO-220 package.

Based on a six-pin surface mount SOIC package, it uses Teccor’s patented “Y”

(US Patent 4,905,119) configuration. It is available in surge current ratings up to 500 A.

SIDACtor devices are used to enable equipment to meet various regulatory requirements

including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA/EIA-IS-968

(formerly known as FCC Part 68).

* For individual “UA”, “UB”, and “UC” surge ratings, see table below.

** Asymmetrical

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• VDRM is measured at IDRM.

• VS is measured at 100 V/µs.

• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured between Pins 1-3 and 1-4 at 1 MHz with a 2 V bias and is a typical value for “UA” product. “UB”

and “UC” capacitance is approximately 2x higher.

• Device is designed to meet balance requirements of GTS 8700 and GR 974.

Electrical Parameters

Part

Number *

VDRM

Volts

VDRM

Volts

Volts VT

Volts

IDRM

µAmps

mAmps

Amps

mAmps

pFPins 1-3, 1-4 Pins 3-4

P1553U_ 130 180 130 180 8 5 800 2.2 150 40

P1803U_ 150 210 150 210 8 5 800 2.2 150 40

P2103U_ 170 250 170 250 8 5 800 2.2 150 40

P2353U_ 200 270 200 270 8 5 800 2.2 150 40

P2703U_ 230 300 230 300 8 5 800 2.2 150 30

P3203U_ 270 350 270 350 8 5 800 2.2 150 30

P3403U_ 300 400 300 400 8 5 800 2.2 150 30

P5103U_ 420 600 420 600 8 5 800 2.2 150 30

A2106U_ ** 170 250 50 80 8 5 800 2.2 120 40

A5030U_ ** 400 550 270 350 8 5 800 2.2 150 30

Surge Ratings

Series

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

B 250 250 150 100 80 30 500

C 500 400 200 150 100 50 500

Balanced Three-chip SIDACtor Device

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

Modified MS-013 TJOperating Junction Temperature Range -40 to +125 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 60 °C/W

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (T

) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Multiport SIDACtor Device

+1 972-580-7777 SIDACtor® Data Book and Design Guide

Multiport SIDACtor Device

The multiport line protector is an integrated multichip solution for protecting multiple

twisted pair from overvoltage conditions. Based on a six-pin surface mount SOIC

package, it is equivalent to four discrete DO-214AA or two TO-220 packages. Available

in surge current ratings up to 500 A, the multiport line protector is ideal for densely

populated, high-speed line cards that cannot afford PCB inefficiencies or the use of

series power resistors.

SIDACtor devices are used to enable equipment to meet various regulatory

requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and

TIA/EIA-IS-968 (formerly known as FCC Part 68).

* For individual “UA”, “UB”, and “UC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• VDRM is measured at IDRM, and VS is measured at 100 V/µs.

• Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for “UA” product. “UB”

and “UC” capacitance is approximately 2x higher.

Electrical Parameters

Part

Number *

VDRM

Volts

VDRM

Volts

Volts VT

Volts

IDRM

µAmps

mAmps

Amps

mAmps

pFPins 1-2, 3-2, 4-5, 6-5 Pins 1-3, 4-6

P0084U_ 6 25 12 50 4 5 800 2.2 50 100

P0304U_ 25 40 50 80 4 5 800 2.2 50 110

P0644U_ 58 77 116 154 4 5 800 2.2 150 50

P0724U_ 65 88 130 176 4 5 800 2.2 150 50

P0904U_ 75 98 150 196 4 5 800 2.2 150 50

P1104U_ 90 130 180 260 4 5 800 2.2 150 40

P1304U_ 120 160 240 320 4 5 800 2.2 150 40

P1504U_ 140 180 280 360 4 5 800 2.2 150 40

P1804U_ 170 220 340 440 4 5 800 2.2 150 30

P2304U_ 190 260 380 520 4 5 800 2.2 150 30

P2604U_ 220 300 440 600 4 5 800 2.2 150 30

P3104U_ 275 350 550 700 4 5 800 2.2 150 30

P3504U_ 320 400 640 800 4 5 800 2.2 150 30

Surge Ratings

Series

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

B 250 250 150 100 80 30 500

C 500 400 200 150 100 50 500

)

Multiport SIDACtor Device

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

Modified MS-013 TJOperating Junction Temperature Range -40 to +150 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 60 °C/W

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (T

) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Multiport Balanced SIDACtor Device

+1 972-580-7777 SIDACtor® Data Book and Design Guide

Multiport Balanced SIDACtor Device

This multiport balanced protector is a surface mount alternative to the modified TO-220

package. It is based on a six-pin surface mount SOIC package and uses Teccor’s

patented “Y” (US Patent 4,905,119) configuration. It is available in surge current ratings up

to 500 A.

SIDACtor devices are used to enable equipment to meet various regulatory requirements

including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA/EIA-IS-968

(formerly known as FCC Part 68).

* For individual “UA”, “UB”, and “UC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• VDRM is measured at IDRM.

• VS is measured at 100 V/µs.

• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for “UA” product. “UB”

and “UC” capacitance is approximately 10 pF higher.

• Device is designed to meet balance requirements of GTS 8700 and GR 974.

Electrical Parameters — Symmetrical

Part

Number *

VDRM

Volts

VDRM

Volt

Volts VT

Volts

IDRM

µAmps

mAmps

Amps

mAmps

Pins 1-2, 2-3, 1-3 Pins 4-5, 5-6, 4-6 Pins 3-2, 6-5, 1-2, 4-5

P1556U_ 130 180 130 180 8 5 800 2.2 150 50

P1806U_ 150 210 150 210 8 5 800 2.2 150 50

P2106U_ 170 250 170 250 8 5 800 2.2 150 40

P2356U_ 200 270 200 270 8 5 800 2.2 150 40

P2706U_ 230 300 230 300 8 5 800 2.2 150 40

P3206U_ 270 350 270 350 8 5 800 2.2 150 40

P3406U_ 300 400 300 400 8 5 800 2.2 150 40

P5106U_ 420 600 420 600 8 5 800 2.2 150 40

Electrical Parameters — Asymmetrical

Part

Number *

VDRM

Volts

VDRM

Volt

Volts VT

Volts

IDRM

µAmps

mAmps

Amps

mAmps

pFPins 1-2, 2-3 Pins 4-6, 1-3

A2106U_6 170 250 50 80 3.5 5 800 2.2 120 40

A5030U_6 400 550 270 350 3.5 5 800 2.2 150 30

Surge Ratings

Series

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

B 250 250 150 100 80 30 500

C 500 400 200 150 100 50 500

Multiport Balanced SIDACtor Device

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

Modified MS-013 TJOperating Junction Temperature Range -40 to +125 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 60 °C/W

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (T

) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

SIDACtor Device

+1 972-580-7777 SIDACtor® Data Book and Design Guide

SIDACtor Device

The modified TO-220 Type 61 SIDACtor solid state protection device can be used in

telecommunication protection applications that do not reference earth ground.

SIDACtor devices are used to enable equipment to meet various regulatory requirements

including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA/EIA-IS-968

(formerly known as FCC Part 68).

* For surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• VDRM is measured at IDRM.

• VS is measured at 100 V/µs.

• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value.

Electrical Parameters

Part

Number *

VDRM

Volts

IDRM

µAmps

mAmps

Amps

mAmps

P2000AA61 180 220 4 5 800 2.2 150 30

P2200AA61 200 240 4 5 800 2.2 150 30

P2400AA61 220 260 4 5 800 2.2 150 30

P2500AA61 240 290 4 5 800 2.2 150 30

P3000AA61 270 330 4 5 800 2.2 150 30

P3300AA61 300 360 4 5 800 2.2 150 30

Surge Ratings

Series

IPP

0.2x310 µs

Amps

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

5x320 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

A 20 150 150 90 50 75 45 20 500

SIDACtor Device

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

Modified

TO-220

Type 61

TJOperating Junction Temperature Range -40 to +150 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 50 °C/W

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (T

) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Two-chip SIDACtor Device

+1 972-580-7777 SIDACtor® Data Book and Design Guide

Two-chip SIDACtor Device

The two-chip modified TO-220 SIDACtor solid state device protects telecommunication

equipment in applications that reference Tip and Ring to earth ground but do not require

balanced protection.

SIDACtor devices are used to enable equipment to meet various regulatory requirements

including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA/EIA-IS-968

(formerly known as FCC Part 68).

* For individual “AA”, “AB”, and “AC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• VDRM is measured at IDRM.

• VS is measured at 100 V/µs.

• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for “AA” and “AB”

product. “AC” capacitance is approximately 2x the listed value.

Electrical Parameters

Part

Number *

VDRM

Volts

VDRM

Volts

Volts VT

Volts

IDRM

µAmps

mAmps

Amps

mAmps

pFPins 1-2, 3-2 Pins 1-3

P0602A_ 25 40 50 80 4 5 800 2.2 50 110

P1402A_ 58 77 116 154 4 5 800 2.2 150 50

P1602A_ 65 95 130 190 4 5 800 2.2 150 50

P2202A_ 90 130 180 260 4 5 800 2.2 150 40

P2702A_ 120 160 240 320 4 5 800 2.2 150 40

P3002A_ 140 180 280 360 4 5 800 2.2 150 40

P3602A_ 170 220 340 440 4 5 800 2.2 150 40

P4202A_ 190 250 380 500 4 5 800 2.2 150 30

P4802A_ 220 300 440 600 4 5 800 2.2 150 30

P6002A_ 275 350 550 700 4 5 800 2.2 150 30

Surge Ratings

Series

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

B 250 250 150 100 80 30 500

C 500 400 200 150 100 50 500

(T)

(R)

(G)

Two-chip SIDACtor Device

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

Modified

TO-220

TJOperating Junction Temperature Range -40 to +150 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 50 °C/W

PIN 1

PIN 2

PIN 3

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (T

) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Two-chip MicroCapacitance (MC) SIDACtor Device

+1 972-580-7777 SIDACtor® Data Book and Design Guide

Two-chip MicroCapacitance (MC)

SIDACtor Device

The two-chip modified TO-220 MC SIDACtor solid state device protects telecommunication

equipment in applications that reference Tip and Ring to earth ground but do not require

balanced protection.

SIDACtor devices are used to enable equipment to meet various regulatory requirements

including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA/EIA-IS-968

(formerly known as FCC Part 68).

* For surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• VDRM is measured at IDRM.

• VS is measured at 100 V/µs.

• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias.

Electrical Parameters

Part

Number *

VDRM

Volts

VDRM

Volts

Volts VT

Volts

IDRM

µAmps

mAmps

Amps

mAmps

pFPins 1-2, 3-2 Pins 1-3

P0602AC MC 25 40 50 80 4 5 800 2.2 50 60

P1402AC MC 58 77 116 154 4 5 800 2.2 150 60

P1602AC MC 65 95 130 190 4 5 800 2.2 150 60

P2202AC MC 90 130 180 260 4 5 800 2.2 150 50

P2702AC MC 120 160 240 320 4 5 800 2.2 150 50

P3002AC MC 140 180 280 360 4 5 800 2.2 150 50

P3602AC MC 170 220 340 440 4 5 800 2.2 150 40

P4202AC MC 190 250 380 500 4 5 800 2.2 150 40

P4802AC MC 220 300 440 600 4 5 800 2.2 150 40

P6002AC MC 275 350 550 700 4 5 800 2.2 150 40

Surge Ratings

Series

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

C 500 400 200 150 100 50 500

(T)

(R)

(G)

Two-chip MicroCapacitance (MC) SIDACtor Device

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

Modified

TO-220

TJOperating Junction Temperature Range -40 to +150 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 50 °C/W

PIN 1

PIN 2

PIN 3

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (T

) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Balanced Three-chip SIDACtor Device

+1 972-580-7777 SIDACtor® Data Book and Design Guide

Balanced Three-chip SIDACtor Device

The three-chip modified TO-220 SIDACtor balanced solid state device is designed for

telecommunication protection systems that reference Tip and Ring to earth ground.

Applications include any piece of transmission equipment that requires balanced protection.

This device is built using Teccor’s patented “Y” (US Patent 4,905,119) configuration.

The SIDACtor device is used to enable equipment to meet various regulatory requirements

including GR 1089, ITU K.20,K.21 and K.45, IEC 60950, UL 60950, and TIA/EIA-IS-968

(formerly known as FCC Part 68).

* For individual “AA”, “AB”, and “AC” surge ratings, see table below.

** Asymmetrical

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• VDRM is measured at IDRM.

• VS is measured at 100 V/µs.

• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for “AA” product. “AB”

and “AC” capacitance is approximately 2x the listed value.

• Device is designed to meet balance requirements of GTS 8700 and GR 974.

Electrical Parameters

Part

Number *

VDRM

Volts

VDRM

Volts

Volts VT

Volts

IDRM

µAmps

mAmps

Amps

mAmps

pFPins 1-2, 2-3 Pins 1-3

P1553A_ 130 180 130 180 8 5 800 2.2 150 40

P1803A_ 150 210 150 210 8 5 800 2.2 150 40

P2103A_ 170 250 170 250 8 5 800 2.2 150 40

P2353A_ 200 270 200 270 8 5 800 2.2 150 40

P2703A_ 230 300 230 300 8 5 800 2.2 150 30

P3203A_ 270 350 270 350 8 5 800 2.2 150 30

P3403A_ 300 400 300 400 8 5 800 2.2 150 30

P5103A_ 420 600 420 600 8 5 800 2.2 150 30

A2106A_ ** 170 250 50 80 8 5 800 2.2 120 40

A5030A_ ** 400 550 270 350 8 5 800 2.2 150 30

Surge Ratings

Series

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

B 250 250 150 100 80 30 500

C 500 400 200 150 100 50 500

Balanced Three-chip SIDACtor Device

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

Modified

TO-220

TJOperating Junction Temperature Range -40 to +150 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 50 °C/W

PIN 1

PIN 2

PIN 3

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (T

) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Balanced Three-chip MicroCapacitance (MC) SIDACtor Device

+1 972-580-7777 SIDACtor® Data Book and Design Guide

Balanced Three-chip MicroCapacitance (MC)

SIDACtor Device

The balanced three-chip TO-220 MC SIDACtor solid state device protects telecommunica-

tion equipment in high-speed applications that are sensitive to load values and that require

a lower capacitance. CO values for the MC are 40% lower than a standard AC part.

This MC SIDACtor series is used to enable equipment to meet various regulatory

requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and

TIA/EIA-IS-968 (formerly known as FCC Part 68) without the need of series resistors.

* For surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• VDRM is measured at IDRM.

• VS is measured at 100 V/µs.

• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias.

• Device is designed to meet balance requirements of GTS 8700 and GR 974.

Electrical Parameters

Part

Number *

VDRM

Volts

VDRM

Volts

Volts VT

Volts

IDRM

µAmps

mAmps

Amps

mAmps

pFPins 1-2, 2-3 Pins 1-3

P1553AC MC 130 180 130 180 8 5 800 2.2 150 40

P1803AC MC 150 210 150 210 8 5 800 2.2 150 40

P2103AC MC 170 250 170 250 8 5 800 2.2 150 40

P2353AC MC 200 270 200 270 8 5 800 2.2 150 40

P2703AC MC 230 300 230 300 8 5 800 2.2 150 30

P3203AC MC 270 350 270 350 8 5 800 2.2 150 30

P3403AC MC 300 400 300 400 8 5 800 2.2 150 30

P5103AC MC 420 600 420 600 8 5 800 2.2 150 30

Surge Ratings

Series

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

C 500 400 200 150 100 50 500

Balanced Three-chip MicroCapacitance (MC) SIDACtor Device

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

Modified

TO-220

TJOperating Junction Temperature Range -40 to +150 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 50 °C/W

PIN 1

PIN 2

PIN 3

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (T

) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

LCAS Asymmetrical Multiport Device

+1 972-580-7777 SIDACtor® Data Book and Design Guide

LCAS Asymmetrical Multiport Device

This is an integrated multichip solution for protecting multiple twisted pair from

overvoltage conditions. Based on a six-pin surface mount SOIC package, it is

equivalent to four discrete DO-214AA or two TO-220 packages. Available in surge

current ratings up to 500 A, the multiport line protector is ideal for densely populated

line cards that cannot afford PCB inefficiencies or the use of series power resistors.

For a diagram of an LCAS (Line Circuit Access Switch) application, see Figure 3.21.

* For individual “UA”, “UB”, and “UC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• VDRM is measured at IDRM.

• VS is measured at 100 V/µs.

• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for “UA” product. “UB”

and “UC” capacitance is approximately 2x higher.

Electrical Parameters

Part

Number *

VDRM

Volts

VDRM

Volts

Volts VT

Volts

IDRM

µAmps

mAmps

Amps

mAmps

Pins 3-2, 6-5 Pins 1-2, 4-5 Pins 3-2, 6-5, 1-2, 4-5

A1220U_4 100 130 180 220 4 5 800 2.2 120 30

A1225U_4 100 130 230 290 4 5 800 2.2 120 30

Surge Ratings

Series

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

B 250 250 150 100 80 30 500

C 500 400 200 150 100 50 500

)

LCAS Asymmetrical Multiport Device

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

Modified MS-013 TJOperating Junction Temperature Range -40 to +125 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 60 °C/W

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (T

) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

LCAS Asymmetrical Discrete Device

+1 972-580-7777 SIDACtor® Data Book and Design Guide

LCAS Asymmetrical Discrete Device

These DO-214AA SIDACtor devices are intended for LCAS (Line Circuit Access Switch)

applications that require asymmetrical protection in discrete (individual) packages. They

enable the protected equipment to meet various regulatory requirements including

GR 1089, ITU K.20, K.21, K.45, IEG 60950, UL 60950, and TIA/EIA-IS-968.

* For individual “SA”, “SB”, and “SC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• VDRM is measured at IDRM.

• VS is measured at 100 V/µs.

• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for “SA” and “SB”

product. “SC” capacitance is approximately 10 pF higher.

Electrical Parameters

Part

Number *

VDRM

Volts

IDRM

µAmps

mAmps

Amps

mAmps

P1200S_ 100 130 4 5 800 2.2 120 40

P2000S_ 180 220 4 5 800 2.2 120 30

P2500S_ 230 290 4 5 800 2.2 120 30

Surge Ratings

Series

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

B 250 250 150 100 80 30 500

C 500 400 200 150 100 50 500

LCAS Asymmetrical Discrete Device

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

DO-214AA TJOperating Junction Temperature Range -40 to +125 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 60 °C/W

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (T

) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Four-Port Balanced Three-chip Protector

+1 972-580-7777 SIDACtor® Data Book and Design Guide

Four-Port Balanced Three-chip Protector

This hybrid Single In-line Package (SIP) protects four twisted pairs from overcurrent and

overvoltage conditions. Comprised of twelve discrete DO-214AA SIDACtor devices and

eight TeleLink surface mount fuses, it is ideal for densely populated line cards that cannot

afford PCB inefficiencies or the use of series power resistors. Surge current ratings up to

500 A are available.

* For individual “ZA,” “ZB,” and “ZC” surge ratings, see table below.

** Asymmetrical

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• VDRM is measured at IDRM.

• VS is measured at 100 V/µs.

• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured between Pins 4-3 and Pins 2-3 at 1 MHz with a 2 V bias and is a typical value for “ZA” product.

“ZB” and “ZC” capacitance is approximately 10 pF higher.

• Device is designed to meet balance requirements of GTS 8700 and GR 974.

Tip

Gnd

Ring

Tip

Gnd

Ring

Tip

Gnd

Ring

Tip

Gnd

Ring

Z10

Z12

Z11

Electrical Parameters

Part

Number *

VDRM

Volts

VDRM

Volts

IDRM

µAmps

mAmps

Amps

mAmps

Pins 2-3, 4-3, 7-8, 9-8,

12-13, 14-13, 17-18, 19-18

Pins 2-4, 7-9,

12-14, 17-19 Pins 1-3

P1553Z_ 130 180 130 180 8 5 800 2.2 150 40

P1803Z_ 150 210 150 210 8 5 800 2.2 150 40

P2103Z_ 170 250 170 250 8 5 800 2.2 150 40

P2353Z_ 200 270 200 270 8 5 800 2.2 150 40

P2703Z_ 230 300 230 300 8 5 800 2.2 150 30

P3203Z_ 270 350 270 350 8 5 800 2.2 150 30

P3403Z_ 300 400 300 400 8 5 800 2.2 150 30

A2106Z_ ** 170 250 50 80 8 5 800 2.2 120 40

A5030Z_ ** 400 550 270 350 8 5 800 2.2 150 30

Surge Ratings

Series

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

B 250 250 150 100 80 30 500

C 500 400 200 150 100 50 500

Four-Port Balanced Three-chip Protector

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

SIP TJOperating Junction Temperature Range -40 to +150 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 90 °C/W

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Waveform

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (TJ) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Four-Port Longitudinal Two-chip Protector

+1 972-580-7777 SIDACtor® Data Book and Design Guide

Four-Port Longitudinal Two-chip Protector

This hybrid Single In-line Package (SIP) protects four twisted pairs from overcurrent and

overvoltage conditions. Comprised of eight discrete DO-214AA SIDACtor devices and eight

TeleLink surface mount fuses, it is ideal for densely populated line cards that cannot afford

PCB inefficiencies or the use of series power resistors. Surge current ratings up to 500 A

are available.

* For individual “ZA,” “ZB,” and “ZC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• VDRM is measured at IDRM.

• VS is measured at 100 V/µs.

• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured between Pins 4-3 and Pins 2-3 at 1 MHz with a 2 V bias and is a typical value for “ZA” product.

“ZB” and “ZC” capacitance is approximately 2x higher.

• Device is designed to meet balance requirements of GTS 8700 and GR 974.

• Lower capacitance MC versions may be available. Contact factory for further information.

Tip

Gnd

Ring

Tip

Gnd

Ring

Tip

Gnd

Ring

Tip

Gnd

Ring

Electrical Parameters

Part

Number *

VDRM

Volts

VDRM

Volts

IDRM

µAmps

mAmps

Amps

mAmps

Pins 2-3, 4-3, 7-8, 9-8,

12-13, 14-13, 17-18, 19-18

Pins 2-4, 7-9,

12-14, 17-19

Pins

2-3, 3-4

P0602Z_ 25 40 50 80 4 5 800 2.2 50 110

P1402Z_ 58 77 116 154 4 5 800 2.2 150 50

P1602Z_ 65 95 130 190 4 5 800 2.2 150 50

P2202Z_ 90 130 180 260 4 5 800 2.2 150 40

P2702Z_ 120 160 240 320 4 5 800 2.2 150 40

P3002Z_ 140 180 280 360 4 5 800 2.2 150 40

P3602Z_ 160 220 320 440 4 5 800 2.2 150 40

P4202Z_ 190 250 380 500 4 5 800 2.2 150 30

P4802Z_ 220 300 440 600 4 5 800 2.2 150 30

P6002Z_ 275 350 550 700 4 5 800 2.2 150 30

Surge Ratings

Series

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

B 250 250 150 100 80 30 500

C 500 400 200 150 100 50 500

Four-Port Longitudinal Two-chip Protector

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

SIP TJOperating Junction Temperature Range -40 to +150 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 90 °C/W

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Waveform

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (TJ) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Four-Port Metallic Line Protector

+1 972-580-7777 SIDACtor® Data Book and Design Guide

Four-Port Metallic Line Protector

The four-port hybrid Single In-line Package (SIP) line protector protects multiple twisted pair

from overcurrent and overvoltage conditions. Based on a SIP, it is equivalent to four

discrete DO-214AA SIDACtor devices and four surface mount fuses. Available in surge

current ratings up to 500 A, this four-port SIP line protector is ideal for densely populated

line cards that cannot afford PCB inefficiencies or the use of series power resistors.

* For individual “ZA,” “ZB,” and “ZC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• VDRM is measured at IDRM.

• VS is measured at 100 V/µs.

• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value for “ZA” and “ZB” product. “ZC” capacitance is

approximately 2x the listed value.

• Lower capacitance MC versions may be available. Contact factory for further information.

Tip

Ring

Tip

Ring

Tip

Ring

Tip

Ring

Electrical Parameters

Part

Number *

VDRM

Volts

IDRM

µAmps

mAmps

Amps

mAmps

P0080Z_ 6 25 4 5 800 2.2 50 100

P0300Z_ 25 40 4 5 800 2.2 50 110

P0640Z_ 58 77 4 5 800 2.2 150 50

P0720Z_ 65 88 4 5 800 2.2 150 50

P0900Z_ 75 98 4 5 800 2.2 150 50

P1100Z_ 90 130 4 5 800 2.2 150 40

P1300Z_ 120 160 4 5 800 2.2 150 40

P1500Z_ 140 180 4 5 800 2.2 150 40

P1800Z_ 170 220 4 5 800 2.2 150 30

P2300Z_ 190 260 4 5 800 2.2 150 30

P2600Z_ 220 300 4 5 800 2.2 150 30

P3100Z_ 275 350 4 5 800 2.2 150 30

P3500Z_ 320 400 4 5 800 2.2 150 30

Surge Ratings

Series

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

B 250 250 150 100 80 30 500

C 500 400 200 150 100 50 500

Four-Port Metallic Line Protector

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

SIP TJOperating Junction Temperature Range -40 to +150 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 90 °C/W

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Waveform

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (TJ) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Fixed Voltage SLIC Protector

+1 972-580-7777 SIDACtor® Data Book and Design Guide

Fixed Voltage SLIC Protector

These DO-214AA unidirectional protectors are constructed with a SIDACtor device and an

integrated diode. They protect SLICs (Subscriber Line Interface Circuits) from damage

during transient voltage activity and enable line cards to meet various regulatory

requirements including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA/

EIA-IS-968 (formerly known as FCC Part 68).

For specific design criteria, see details in Figure 3.21.

* For individual “SA” and “SC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• VDRM is measured at IDRM.

• VS and VF are measured at 100 V/µs.

• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value for “SA” and “SB” product. “SC” capacitance is

approximately 2x the listed value.

• Parallel capacitive loads may affect electrical parameters.

Electrical Parameters

Part

Number *

VDRM

Volts

IDRM

µAmps

mAmps

Amps

mAmps

P0641S_ 58 77 4 5 5 800 1 120 70

P0721S_ 65 88 4 5 5 800 1 120 70

P0901S_ 75 98 4 5 5 800 1 120 70

P1101S_ 95 130 4 5 5 800 1 120 70

Surge Ratings (Preliminary Data)

Series

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

C 500 400 200 120 100 50 500

(T/R)

(G)

Cathode

Fixed Voltage SLIC Protector

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

DO-214AA TJOperating Junction Temperature Range -40 to +150 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 90 °C/W

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (T

) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Twin SLIC Protector

+1 972-580-7777 SIDACtor® Data Book and Design Guide

Twin SLIC Protector

Subscriber Line Interface Circuits (SLIC) are highly susceptible to transient voltages, such

as lightning and power cross conditions. To minimize this threat, Teccor provides this dual-

chip, fixed-voltage SLIC protector device.

For specific design criteria, see details in Figure 3.23.

* For surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• VDRM is measured at IDRM.

• VS and VF are measured at 100 V/µs.

• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured across pins 1-2 or 2-3 at 1 MHz with a 2 V bias. Capacitance across pins 1-3 is approximately

half.

• Parallel capacitive loads may affect electrical parameters.

• Compliance with GR 1089 or UL 60950 power cross tests may require special design considerations. Contact the factory for further

information.

Electrical Parameters

Part

Number *

VDRM

Volts

VDRM

Volts

Volts VT

Volts

IDRM

µAmps

mAmps

Amps

mAmps

pFPins 1-2, 2-3 Pins 1-3

P0641CA2 58 77 58 77 4 5 5 800 1 120 60

P0721CA2 65 88 65 88 4 5 5 800 1 120 60

P0901CA2 75 98 75 98 4 5 5 800 1 120 60

P1101CA2 95 130 95 130 4 5 5 800 1 120 60

Surge Ratings (Preliminary Data)

Series

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

(T)

(G)

(R)

Twin SLIC Protector

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

Modified DO-214AA TJOperating Junction Temperature Range -40 to +150 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 85 °C/W

Pin 3

Pin 1

Pin 2

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (TJ) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Multiport SLIC Protector

+1 972-580-7777 SIDACtor® Data Book and Design Guide

Multiport SLIC Protector

This multiport line protector is designed as a single-package solution for protecting

multiple twisted pair from overvoltage conditions. Based on a six-pin SOIC package, it

is equivalent to four discrete DO-214AA packages. Available in surge current ratings

up to 500 A for a 2x10 µs event, the multiport line protector is ideal for densely

populated line cards that cannot afford PCB inefficiencies or the use of series power

resistors.

For specific design criteria, see details in Figure 3.24.

* For individual “UA” and “UC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• VDRM is measured at IDRM.

• VS and VF are measured at 100 V/µs.

• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured across pins 1-2, 2-3, 4-5, or 5-6 at 1 MHz with a 2 V bias and is a typical value. Capacitance

across pins 1-3 or 4-6 is approximately half. “UC” capacitance is approximately 2x the listed value for “UA” product.

• Parallel capacitive loads may affect electrical parameters.

Electrical Parameters

Part

Number *

VDRM

Volts

VDRM

Volts

IDRM

µAmps

mAmps

Amps

mAmps

Pins

1-2, 2-3,

4-5, 5-6

Pins

1-3, 4-6

P0641U_ 58 77 58 77 4 5 5 800 1 120 70

P0721U_ 65 88 65 88 4 5 5 800 1 120 70

P0901U_ 75 98 75 98 4 5 5 800 1 120 70

P1101U_ 95 130 95 130 4 5 5 800 1 120 70

Surge Ratings

Series

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

C 500 400 200 120 100 50 500

)

Multiport SLIC Protector

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

Modified MS-013 TJOperating Junction Temperature Range -40 to +150 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 60 °C/W

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (TJ) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Battrax SLIC Protector

+1 972-580-7777 SIDACtor® Data Book and Design Guide

Battrax SLIC Protector

This solid state protection device can be referenced to either a positive or negative voltage

source. The B1xx0C_ is for a -VREF and the B2050C_ is for a +VREF

. Designed using an

SCR and a gate diode, the B1xx0C_ Battrax begins to conduct at |-VREF| + |-1.2 V| while the

B2050C_ Battrax begins to conduct at |+VREF|+|1.2V|.

For a diagram of a Battrax application, see Figure 3.29.

* For individual “CA” and “CC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• IPP ratings assume VREF = ±48 V.

• VDRM is measured at IDRM.

• VS is measured at 100 V/µs.

• Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value. “CC” product is approximately 2x the listed value.

• Positive Battrax information is preliminary data.

• VREF maximum value for the negative Battrax is -200 V.

• VREF maximum value for the positive Battrax is 110 V.

Pin 3

(-VREF)

Pin 1

(Line)

Pin 2

(Ground)

Gate

+Battrax

B2050C_

Pin 3

(+VREF)

Pin 2

(Ground)

Pin 1

(Line)

-Battrax

B1xx0C_

Electrical Parameters

Part

Number *

VDRM

Volts

IDRM

µAmps

IGT

mAmps

Amps

mAmps

B1100C_ |-VREF| + |-1.2 V| |-VREF| + |-10 V| 4 5 100 1 100 50

B1160C_ |-VREF| + |-1.2 V| |-VREF| + |-10 V| 4 5 100 1 160 50

B1200C_ |-VREF| + |-1.2 V| |-VREF| + |-10 V| 4 5 100 1 200 50

B2050C_ |+VREF| + |1.2 V| |+VREF| + |10 V| 4 5 50 1 5 50

Surge Ratings

Series

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

A 150 150 90 60 50 40 500

C 500 400 200 150 100 50 500

Battrax SLIC Protector

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

Modified DO-214AA TJOperating Junction Temperature Range -40 to +150 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 85 °C/W

Pin 3

REF

)

Pin 1

(Line) Pin 2

(Ground)

DRM

-V

-I

DRM

-V

-I

V-I Characteristics for Negative Battrax

DRM

-V

-I

V-I Characteristics for Positive Battrax

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (TJ) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Battrax Dual Negative SLIC Protector

+1 972-580-7777 SIDACtor® Data Book and Design Guide

Battrax Dual Negative SLIC Protector

This solid state Battrax protection device is referenced to a negative voltage source. Its

dual-chip package also includes internal diodes for transient protection from positive

surge events.

For a diagram of a Battrax application, see Figure 3.27.

* For individual “UA” and “UC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• IPP ratings assume a VREF = -48 V.

• VDRM is measured at IDRM.

• VS is measured at 100 V/µs.

• Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value. “UC” product is approximately 2x the listed value.

• VREF maximum value for the B1101, B1161, and/or B1201 is -200 V.

** Call factory for release date.

Electrical Parameters

Part

Number *

VDRM

Volts

IDRM

µAmps

IGT

mAmps

Amps

mAmps

B1101U_ |-VREF| + |-1.2V| |-VREF| + |-10V| 4 5 5 100 1 100 50

B1161U_ |-VREF| + |-1.2V| |-VREF| + |-10V| 4 5 5 100 1 160 50

B1201U_ |-VREF| + |-1.2V| |-VREF| + |-10V| 4 5 5 100 1 200 50

Surge Ratings

Series

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

C** 500 400 200 120 100 50 500

1 32

(T) (-V

REF

) (R)

(G)

Battrax Dual Negative SLIC Protector

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

Modified MS-013 TJOperating Junction Temperature Range -40 to +125 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 60 °C/W

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (TJ) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Battrax Dual Positive/Negative SLIC Protector

+1 972-580-7777 SIDACtor® Data Book and Design Guide

Battrax Dual Positive/Negative SLIC Protector

This Battrax device protects Subscriber Line Interface Circuits (SLIC) that use both a

positive and negative Ring voltage. It limits transient voltages with rise times of 100 V/

µs to VREF ±10 V.

Teccor’s six-pin Battrax devices are constructed using four SCRs and four gate diodes.

The SCRs conduct when a voltage that is more negative than -VREF (and/or more

positive than +VREF) is applied to the cathode (Pins 1 and 3) of the SCR. During

conduction, the SCRs appear as a low-resistive path which forces all transients to be

shorted to ground.

For a diagram of a Battrax application, see Figure 3.30.

* For individual “UA” and “UC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• IPP ratings assume a VREF = ±48 V.

• VDRM is measured at IDRM.

• VS is measured at 100 V/µs.

• Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value. “UC” product is approximately 2x the listed value.

• Positive Battrax information is preliminary data.

• VREF maximum value for the negative Battrax is -200 V.

• VREF maximum value for the positive Battrax is 110 V.

** Call factory for release date.

Electrical Parameters

Part

Number *

VDRM

Volts

IDRM

µAmps

IGT

mAmps

Amps

mAmps

B3104U_ |-VREF| + |±1.2V| |-VREF| + |±10V| 4 5 100 1 100 50

B3164U_ |-VREF| + |±1.2V| |-VREF| + |±10V| 4 5 100 1 160 50

B3204U_ |-VREF| + |±1.2V| |-VREF| + |±10V| 4 5 100 1 200 50

Surge Ratings

Series

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

C** 500 400 200 120 100 50 500

(T) (-V

REF

)(R)

Ground

2, 5

(+V

REF

)

Battrax Dual Positive/Negative SLIC Protector

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

Modified MS-013 TJOperating Junction Temperature Range -40 to +125 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 60 °C/W

DRM

-V

-I

DRM

-V

-I

Positive Battrax

Characteristics

Negative Battrax

Characteristics

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (T

) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

Battrax Quad Negative SLIC Protector

+1 972-580-7777 SIDACtor® Data Book and Design Guide

Battrax Quad Negative SLIC Protector

This Battrax device is an integrated overvoltage protection solution for SLIC-based

(Subscriber Line Interface Circuit) line cards. This six-pin device is constructed using

four SCRs and four gate diodes.

The device is referenced to VBAT and conducts when a voltage that is more negative

than -VREF is applied to the cathode (pins 1, 3, 4, or 6) of the SCR. During conduction,

all negative transients are shorted to Ground. All positive transients are passed to

Ground by steering diodes.

For specific diagrams showing these Battrax applications, see Figure 3.28.

* For individual “UA” and “UC” surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• IPP ratings assume a VREF = ±48 V.

• VDRM is measured at IDRM.

• VS is measured at 100 V/µs.

• Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value. “UC” product is approximately 2x the listed value.

• VREF maximum value for the negative Battrax is -200 V.

Electrical Parameters

Part

Number *

VDRM

Volts

IDRM

µAmps

IGT

mAmps

Amps

mAmps

B1101U_4 |-VREF| + |-1.2V| |-VREF| + |-10V| 4 5 100 1 100 50

B1161U_4 |-VREF| + |-1.2V| |-VREF| + |-10V| 4 5 100 1 160 50

B1201U_4 |-VREF| + |-1.2V| |-VREF| + |-10V| 4 5 100 1 200 50

Surge Ratings

Series

IPP

2x10 µs

Amps

IPP

8x20 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

A 150 150 90 50 45 20 500

C 500 400 200 120 100 50 500

(T) (-V

REF

)(R)

Ground

2, 5

(+V

REF

)

Battrax Quad Negative SLIC Protector

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

Modified MS-013 TJOperating Junction Temperature Range -40 to +125 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 60 °C/W

DRM

-V

-I

DRM

-V

-I

Positive Battrax

Characteristics

Negative Battrax

Characteristics

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (TJ) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

CATV and HFC SIDACtor Device

+1 972-580-7777 SIDACtor® Data Book and Design Guide

CATV and HFC SIDACtor Device

This SIDACtor device is a 1000 A solid state protection device offered in a TO-220 package.

It protects equipment located in the severe surge environment of Community Antenna TV

(CATV) applications.

Used in Hybrid Fiber Coax (HFC) applications, this device replaces the gas tube

traditionally used for station protection, because a SIDACtor device has a much tighter

voltage tolerance.

* For surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• VDRM is measured at IDRM.

• VS is measured at 100 V/µs.

• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value.

Electrical Parameters

Part

Number *

VDRM

Volts

IDRM

µAmps

mAmps

Amps

mAmps

Pins 1-3

P1400AD 120 160 3 5 800 2.2 50 200

P1800AD 170 220 5.5 5 800 2.2 50 150

Surge Ratings

Series

IPP

8x20 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

D 1000 250 120 500

CATV and HFC SIDACtor Device

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Thermal Considerations

Package Symbol Parameter Value Unit

Modified

TO-220

TJOperating Junction Temperature Range -40 to +150 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 60 °C/W

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (TJ) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

High Surge Current SIDACtor Device

+1 972-580-7777 SIDACtor® Data Book and Design Guide

High Surge Current SIDACtor Device

This SIDACtor device is a 1000 A solid state protection device offered in a TO-220 package.

It protects equipment located in the severe surge environment of Community Antenna TV

(CATV) applications.

This device can replace the gas tubes traditionally used for station protection because

SIDACtor devices have much tighter voltage tolerances.

* For surge ratings, see table below.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• VDRM is measured at IDRM.

• VS is measured at 100 V/µs.

• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value.

Electrical Parameters

Part

Number *

VDRM

Volts

IDRM

µAmps

mAmps

Amps

mAmps

Pins 1-3

P6002AD 550 700 5.5 5 800 2.2 50 60

(T)

(R)

(G)

Electrical Parameters

Part

Number *

VDRM

Volts

IDRM

µAmps

mAmps

Amps

mAmps

Pins 1-3

P3100AD 280 360 5.5 5 800 2.2 120 115

Surge Ratings

Series

IPP

8x20 µs

Amps

IPP

10x1000 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

D 1000 250 120 1000

High Surge Current SIDACtor Device

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Note: P6002AD is shown. P3100AD has no center lead.

Thermal Considerations

Package Symbol Parameter Value Unit

Modified

TO-220

TJOperating Junction Temperature Range -40 to +150 °C

TSStorage Temperature Range -65 to +150 °C

RqJA Thermal Resistance: Junction to Ambient 60 °C/W

PIN 1

PIN 2

PIN 3

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (TJ) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

CATV Line Amplifiers/Power Inserters SIDACtor Device

+1 972-580-7777 SIDACtor® Data Book and Design Guide

CATV Line Amplifiers/Power Inserters

SIDACtor Device

This SIDACtor device is a 5000 A solid state protection device offered in a non-isolated

TO-218 package. It protects equipment located in the severe surge environment of CATV

(Community Antenna TV) applications.

In CATV line amplifiers and power inserters, this device can replace the gas tubes

traditionally used for station protection because SIDACtor devices have much tighter

voltage tolerances.

* For surge ratings, see table below.

** IT is a free air rating; heat sink IT rating is 25 A.

General Notes:

• All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range.

• IPP is a repetitive surge rating and is guaranteed for the life of the product.

• Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

• VDRM is measured at IDRM.

• VS is measured at 100 V/µs.

• Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request.

• Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value.

Electrical Parameters

Part

Number *

VDRM

Volts

IDRM

µAmps

mAmps

Amps **

mAmps

P1900ME 140 220 4 5 800 2.2/25 50 750

P2300ME 180 260 4 5 800 2.2/25 50 750

Surge Ratings

Series

IPP

8x20 µs

Amps

ITSM

60 Hz

Amps

di/dt

Amps/µs

E 5000 400 500

CATV Line Amplifiers/Power Inserters SIDACtor Device

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

* RqJC rating assumes the use of a heat sink and on state mode for extended time at 25 A, with average power dissipation of 29.125 W.

Thermal Considerations

Package Symbol Parameter Value Unit

TO-218

TJOperating Junction Temperature Range -40 to +150 °C

TSStorage Temperature Range -65 to +150 °C

TCMaximum Case Temperature 100 °C

RqJC * Thermal Resistance: Junction to Case 1.7 °C/W

RqJA Thermal Resistance: Junction to Ambient 56 °C/W

123

(No

Connection)

DRM

-V

-I

DRM

-V

-I

V-I Characteristics

100

Peak

Value

Half Value

t – Time (µs)

– Peak Pulse Current – %I

= rise time to peak value

= decay time to half value

Waveform = t

x t

tr x td Pulse Wave-form

-8

-40 -20 0 20 40 60 80 100 120 140 160

-6

-4

Junction Temperature (TJ) – ˚C

Percent of V

Change – %

25 ˚C

Normalized VS Change versus Junction Temperature

0.4

-40 -20 0 20 40 60 80 100 120 140 160

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Case Temperature (T

) – ˚C

Ratio of

= 25 ˚C)

25 ˚C

Normalized DC Holding Current versus Case Temperature

TeleLink Fuse

+1 972-580-7777 SIDACtor® Data Book and Design Guide

TeleLink Fuse

The TeleLink Surface Mount (SM) surge resistant fuse offers circuit protection without

requiring a series resistor. When used in conjunction with the SIDACtor Transient Voltage

Suppressor (TVS), the TeleLink SM fuse and the SIDACtor TVS provide a complete

regulatory-compliant solution for standards such as GR 1089, TIA/EIA-IS-968, UL 60950,

and ITU K.20 and K.21 (formerly known as FCC Part 68). No series resistor is required for

the F1250T and F1251T to comply with these standards.

Contact factory for enhanced K.20 and K.21 details.

* Interrupt test characterized at 50° to 70° phase angle. Phase angles approximating 90° may result in damage to the body of the fuse.

Notes:

• The TeleLink SM fuse is designed to carry 100% of its rated current for four hours and 250% of its rated current for one second

minimum and 120 seconds maximum. Typical time is four to 10 seconds. For optimal performance, an operating current of 80% or

less is recommended.

• I2t is a non-repetitive RMS surge current rating for a period of 16.7 ms.

Notes:

• Typical inductance @ 4 µH up to 500 MHz.

• Resistance changes 0.5% for every °C.

• Resistance is measured at 10% rated current.

Surge Ratings

TeleLink SM Fuse

IPP

2x10 µs

Amps

IPP

10x160 µs

Amps

IPP

10x560 µs

Amps

IPP

10x1000 µs

Amps

F0500T not rated 75 45 35

F1250T 500 160 115 100

F1251T 500 160 115 100

Interrupting Values

TeleLink SM

Fuse

Voltage

Rating

Current

Rating

I2t Measured

at DC Rated

Voltage

Interrupting Rating

Voltage, Current MIN TYP MAX

F0500T 250 V 500 mA 1.3 A2s 600 V, 40 A 1 s 2 s 60 s

F1250T 250 V 1.25 A 22.2 A2s 600 V, 60 A * 1 s 2 s 60 s

F1251T 250 V 2 A 30 A2s 600 V, 60 A * 1 s 2 s 60 s

Resistance Ratings

TeleLink SM Fuse

Typical Voltage Drop

@ Rated Current

DC Cold Resistance

MIN MAX

F0500T 0.471 V 0.420 W0.640 W

F1250T 0.205 V 0.107 W0.150 W

F1251T 0.110 V 0.050 W0.100 W

TeleLink Fuse

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Qualification Data

The F1250T and F1251T meet the following test conditions per GR 1089 without additional series resistance.

However, in-circuit test verification is required. Note that considerable heating may occur during Test 4 of the

Second Level AC Power Fault Test.

* Test 5 simulates a high impedance induction fault. For specific information, please contact Teccor Electronics.

Notes:

• Power fault tests equal or exceed the requirements of UL 60950 3rd edition.

• Test 4 is intended to produce a maximum heating effect. Temperature readings can exceed 150 °C.

• Test 2 may be dependent on the closing angle of the voltage source. Fuse is characterized at 50° to 70°. Closing angles

approximating 90° may result in damage to the body of the fuse.

• Use caution when routing internal traces adjacent to the F1250T and F1251T.

First Level Lightning Surge Test

Test

Surge Voltage

Volts

Wave-form

µs

Surge Current

Amps

Repetitions Each

Polarity

1 ±600 10x1000 100 25

2 ±1000 10x360 100 25

3 ±1000 10x1000 100 25

4 ±2500 2x10 500 10

5 ±1000 10x360 25 5

Second Level Lightning Surge Test

Test

Surge Voltage

Volts

Wave-form

µs

Surge Current

Amps

Repetitions Each

Polarity

1 ±5000 2x10 500 1

First Level AC Power Fault Test

Test

Applied Voltage, 60 Hz

VRMS

Short Circuit Current

Amps Duration

1500.3315 min

2 100 0.17 15 min

3 200, 400, 600 1 at 600 V 60 applications, 1 s each

4 1000 1 60 applications, 1 s each

5 * * 60 applications, 5 s each

6 600 0.5 30 s each

7 600 2.2 2 s each

8 600 3 1 s each

9 1000 5 0.5 s each

Second Level AC Power Fault Test for Non-Customer Premises Equipment

Test

Applied Voltage, 60 Hz

VRMS

Short Circuit Current

Amps Duration

1 120, 277 30 30 min

2 600 60 5 s

36007 5 s

4 100-600 2.2 at 600 V 30 min

TeleLink Fuse

+1 972-580-7777 SIDACtor® Data Book and Design Guide

Time Current Curve

Time in seconds

Current in Amperes

.01

.02

.03

.04

.05

.06

.07

.08

.09

100

200

300

400

500

600

700

800

1000

F0500T

F1250T F1251T

80 90

100

TeleLink Fuse

SIDACtor® Data Book and Design Guide +1 972-580-7777

Data Sheets

Temperature Derating Curve

Operating temperature is -55 °C to +125 °C with proper correction factor applied.

Chart of Correction Factor

* Higher currents and PCB layout designs can affect this parameter.

Notes:

• Readings are measured at rated current after temperature stabilizes

• The F1250T meets the requirements of UL 248-14. However, board layout, board trace widths, and ambient

temperature values can cause higher than expected rises in temperature. During UL testing, the typical

recorded heat rise for the F1250T at 2.2 A was 120 °C.

Maximum Temperature Rise

TeleLink Fuse Temperature Reading

F0500T £75 °C (167 °F) *

F1250T £75 °C (167 °F) *

F1251T £75 °C (167 °F) *

-55 -60 -40 -20 0 20 40 60 80 100 125

100

110

Ambient ˚C

Percent of Rating

Effect on

Current Rating

120

130

140

150

Package Symbolization

Marking F0500T F1250T F1251T

Manufactured in

USA

Manufactured in

Tai wan

FU F U

FT F T

JU J U

JT J T

NU N U

NT N T

TeleLink Fuse

+1 972-580-7777 SIDACtor® Data Book and Design Guide