Document Number: 91116 www.vishay.com
S11-1053-Rev. C, 30-May-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L
Vishay Siliconix
FEATURES
•Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount (IRFBC40S, SiHFBC40S)
•
Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)
•
Available in Tape and Reel (IRFBC40S, SiHFBC40S)
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
•Fast Switching
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK is a surface mount power package capable of
the accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application. The
through-hole version (IRFBC40L, SiHFBC40L) is available
for low-profile applications.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V; starting TJ = 25 °C, L = 27 mH, Rg = 25 , IAS = 6.2 A (see fig. 12).
c. ISD 6.2 A, dI/dt 80 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Uses IRFBC40, SiHFBC40 data and test conditions.
PRODUCT SUMMARY
VDS (V) 600
RDS(on) ()V
GS = 10 V 1.2
Qg (Max.) (nC) 60
Qgs (nC) 8.3
Qgd (nC) 30
Configuration Single
N-Channel MOSFET
G
D
S
D
2
PAK (TO-263)
GD
S
I
2
PAK (TO-262)
GDS
ORDERING INFORMATION
Package D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHFBC40S-GE3 SiHFBC40STRL-GE3a SiHFBC40L-GE3
Lead (Pb)-free IRFBC40SPbF IRFBC40STRLPbFa IRFBC40LPbF
SiHFBC40S-E3 SiHFBC40STL-E3aSiHFBC40L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source VoltageeVDS 600 V
Gate-Source VoltageeVGS ± 20
Continuous Drain Current VGS at 10 V TC = 25 °C ID
6.2
A
TC = 100 °C 3.9
Pulsed Drain Currenta,e IDM 25
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energyb, e EAS 570 mJ
Repetitive Avalanche CurrentaIAR 6.2 A
Repetitive Avalanche EnergyaEAR 13 mJ
Maximum Power Dissipation TC = 25 °C PD
130 W
TA = 25 °C 3.1
Peak Diode Recovery dV/dtc, e dV/dt 3.0 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C
Soldering Recommendations (Peak Temperature) for 10 s 300d
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com Document Number: 91116
2S11-1053-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L
Vishay Siliconix
Note
a. When mounted on 1" square PCB ( FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Uses IRFBC40, SiHFBC40 data and test conditions.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient
(PCB Mounted, steady-state)aRthJA -40
°C/W
Maximum Junction-to-Case RthJC -1.0
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 600 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.70 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V
Gate-Source Leakage IGSS V
GS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 600 V, VGS = 0 V - - 100 μA
VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 500
Drain-Source On-State Resistance RDS(on) V
GS = 10 V ID = 3.7 Ab--1.2
Forward Transconductance gfs VDS = 100 V, ID = 3.7 Ab4.7 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5c
- 1300 -
pFOutput Capacitance Coss - 160 -
Reverse Transfer Capacitance Crss -30-
Total Gate Charge Qg
VGS = 10 V ID = 6.2 A, VDS = 480 V,
see fig. 6 and 13b, c
--60
nC Gate-Source Charge Qgs --8.3
Gate-Drain Charge Qgd --30
Turn-On Delay Time td(on)
VDD = 300 V, ID = 6.2 A,
Rg = 9.1 , RD = 47 ,
see fig. 10b, c
-13-
ns
Rise Time tr -18-
Turn-Off Delay Time td(off) -55-
Fall Time tf -20-
Internal Source Inductance LSBetween lead, and center of die contact - 7.5 - nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISMOSFET symbol
showing the
integral reverse
p - n junction diode
--6.2
A
Pulsed Diode Forward CurrentaISM --25
Body Diode Voltage VSD TJ = 25 °C, IS = 6.2 A, VGS = 0 Vb--1.5V
Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/μsb- 450 940 ns
Body Diode Reverse Recovery Charge Qrr -3.87.9μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
S
D
G
Document Number: 91116 www.vishay.com
S11-1053-Rev. C, 30-May-11 3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
www.vishay.com Document Number: 91116
4S11-1053-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Document Number: 91116 www.vishay.com
S11-1053-Rev. C, 30-May-11 5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
RD
VGS
Rg
D.U.T.
10 V
+
-
VDS
VDD
VDS
90 %
10 %
VGS
td(on) trtd(off) tf
Rg
IAS
0.01 Ω
tp
D.U.T
L
VDS
+
-VDD
10 V
Vary tp to obtain
required IAS
I
AS
V
DS
V
DD
V
DS
t
p
www.vishay.com Document Number: 91116
6S11-1053-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
QGS QGD
QG
V
G
Charge
10 V
D.U.T.
3 mA
VGS
VDS
IGID
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
Document Number: 91116 www.vishay.com
S11-1053-Rev. C, 30-May-11 7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L
Vishay Siliconix
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91116.
P.W. Period
dI/dt
Diode recovery
dV/dt
Ripple ≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
VGS = 10 Va
ISD
Driver gate drive
D.U.T. lSD waveform
D.U.T. VDS waveform
Inductor current
D = P.W.
Period
+
-
+
+
+
-
-
-
Peak Diode Recovery dV/dt Test Circuit
VDD
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
D.U.T. Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
Rg
Note
a. VGS = 5 V for logic level devices
VDD
Document Number: 91364 www.vishay.com
Revision: 15-Sep-08 1
Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
5
4
13
L1
L2
D
BB
E
H
B
A
Detail A
A
A
c
c2
A
2 x e
2 x b2
2 x b
0.010 A B
MM ± 0.004 B
M
Base
metal
Plating b1, b3
(b, b2)
c1
(c)
Section B - B and C - C
Scale: none
Lead tip
4
34
(Datum A)
2CC
BB
5
5
View A - A
E1
D1
E
4
4
B
H
Seating plane
Gauge
plane
0° to 8°
Detail “A”
Rotated 90° CW
scale 8:1
L3 A1
L4
L
MILLIMETERS INCHES MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 -
A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420
b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 -
b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066
c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Document Number: 91367 www.vishay.com
Revision: 27-Oct-08 1
Package Information
Vishay Siliconix
I2PAK (TO-262) (HIGH VOLTAGE)
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost
extremes of the plastic body.
3. Thermal pad contour optional within dimension E, L1, D1, and E1.
4. Dimension b1 and c1 apply to base metal only.
A
E
B
A
A
A
c2
c
A1
Base
metal
Plating b1, b3
(b, b2)
c1
c
Section A - A
Section B - B and C - C
Scale: None
E1
E
Seating
plane
Lead tip
(Datum A)
L1
L2
BB
CC
L
D
2 x e
3 x b2
3 x b
0.010 A B
MM
D1
MILLIMETERS INCHES MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D 8.38 9.65 0.330 0.380
A1 2.03 3.02 0.080 0.119 D1 6.86 - 0.270 -
b 0.51 0.99 0.020 0.039 E 9.65 10.67 0.380 0.420
b1 0.51 0.89 0.020 0.035 E1 6.22 - 0.245 -
b2 1.14 1.78 0.045 0.070 e 2.54 BSC 0.100 BSC
b3 1.14 1.73 0.045 0.068 L 13.46 14.10 0.530 0.555
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.065
c1 0.38 0.58 0.015 0.023 L2 3.56 3.71 0.140 0.146
c2 1.14 1.65 0.045 0.065
ECN: S-82442-Rev. A, 27-Oct-08
DWG: 5977
AN826
Vishay Siliconix
Document Number: 73397
11-Apr-05
www.vishay.com
1
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.635
(16.129)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.420
(10.668)
0.355
(9.017)
0.145
(3.683)
0.135
(3.429)
0.200
(5.080)
0.050
(1.257)
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Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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