PACKAGE SCHEMATIC
PHOTO FET OPTOCOUPLERS
3/19/03
Page 1 of 10
© 2003 Fairchild Semiconductor Corporation
H11F1 H11F2 H11F3
DESCRIPTION
The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-
detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free
control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.
FEATURES
As a remote variable resistor
•
≤
100
Ω
to
≥
300 M
Ω
•
≥
99.9% linearity
•
≤
15 pF shunt capacitance
•
≥
100 G
Ω
I/O isolation resistance
As an analog switch
• Extremely low offset voltage
•60 V
pk-pk
signal capability
• No charge injection or latch-up
•t
on
, t
off
≤
15 µS
• UL recognized (File #E90700)
• VDE recognized (File #E94766)
– Ordering option ‘300’ (e.g. H11F1.300)
APPLICATIONS
As a variable resistor –
• Isolated variable attenuator
•Automatic gain control
• Active filter fine tuning/band switching
As an analog switch –
• Isolated sample and hold circuit
• Multiplexed, optically isolated A/D conversion
6
1
6
1
6
1
1
2
6
5
4
OUTPUT
TERM.
OUTPUT
TERM.
ANODE
CATHODE
3
3/19/03
Page 2 of 10
© 2003 Fairchild Semiconductor Corporation
PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Parameter Symbol Device Value Units
TOTAL DEVICE
Storage Temperature T
STG
All -55 to +150 °C
Operating Temperature T
OPR
All -55 to +100 °C
Lead Solder Temperature T
SOL
All 260 for 10 sec °C
EMITTER
Continuous Forward Current I
F
All 60 mA
Reverse Voltage V
R
All 5 V
Forward Current - Peak (10 µs pulse, 1% duty cycle) I
F(pk)
All 1 A
LED Power Dissipation 25°C Ambient P
D
All 100 mW
Derate Linearly From 25°C 1.33 mW/°C
DETECTOR
Detector Power Dissipation @ 25°C P
D
All 300 mW
Derate linearly from 25°C 4.0 mW/°C
Breakdown Voltage (either polarity) BV
4-6
H11F1, H11F2 ±30 V
H11F3 ±15 V
Continuous Detector Current (either polarity) I
4-6
All ±100 mA
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter Test Conditions Symbol Device Min Typ* Max Unit
EMITTER
Input Forward Voltage I
F
= 16 mA V
F
All 1.3 1.75 V
Reverse Leakage Current V
R
= 5 V I
R
All 10 µA
Capacitance V = 0 V, f = 1.0 MHz C
J
All 50 pF
OUTPUT DETECTOR
Breakdown Voltage
Either Polarity I
4-6
= 10µA, I
F
= 0 BV
4-6
H11F1, H11F2 30 V
H11F3 15
Off-State Dark Current V
4-6
= 15 V, I
F
= 0 I
4-6
All 50 nA
V
4-6
= 15 V, I
F
= 0, T
A
= 100°C All 50 µA
Off-State Resistance V
4-6
= 15 V, I
F
= 0 R
4-6
All 300 M
Ω
Capacitance V
4-6
= 15 V, I
F
= 0, f = 1MHz C
4-6
All 15 pF
3/19/03
Page 3 of 10
© 2003 Fairchild Semiconductor Corporation
PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
ISOLATION CHARACTERISTICS
Parameter Test Conditions Symbol Min Typ* Max Units
Input-Output Isolation Voltage f = 60Hz, t = 1 min. V
ISO
5300 Vac (rms)
Isolation Resistance V
I-O
= 500 VDC R
ISO
10
11
Ω
Isolation Capacitance V
I-O
= 0, f = 1.0 MHz C
ISO
2pF
TRANSFER CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
DC Characteristics Test Conditions Symbol Device Min Typ* Max Units
On-State Resistance I
F
= 16 mA, I
4-6
= 100 µA R
4-6
H11F1 200
Ω
H11F2 330
H11F3 470
On-State Resistance I
F
= 16 mA, I
6-4
= 100 µA R
6-4
H11F1 200
Ω
H11F2 330
H11F3 470
Resistance, non-linearity
and assymetry
I
F
= 16mA, I
4-6
= 25 µA RMS,
f = 1kHz All 0.1 %
AC Characteristics Test Conditions Symbol Device Min Typ* Max Units
Tu r n-On Time R
L
= 50
Ω
, I
F
= 16mA, V
4-6
= 5V t
on
All 25 µS
Tu r n-Off Time R
L
= 50
Ω
, I
F
= 16mA, V
4-6
= 5V t
off
All 25 µS
3/19/03
Page 4 of 10
© 2003 Fairchild Semiconductor Corporation
PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
3
1
2
0.8
0.6
0.4
-25-50 0 25 50 75 100
TA - AMBIENT TEMPERATURE - °C
Figure 5. Resistance vs. Temperature
r(on) - NORMALIZED RESISTANCE
2
1
8
6
4
40
20
10
100
80
60
2
8
6
4
40
20
10
100
80
60
100 1000 10K 100K
r(on) RESISTANCE - Ω
Figure 6. Region of Linear Resistance
V4-6 - MAXIMUM RMS SIGNAL VOLTAGE - mV
I4-6 - MAXIMUM RMS SIGNAL CURRENT - µA
1K
MAXIMUM
RMS
VOLTAGE
MAXIMUM
RMS
CURRENT
10000
1000
100
10
1
0204060
TA - AMBIENT TEMPERATURE (°C)
Figure 4. Off-state Current vs. Ambient Temperature
I46 - NORMALIZED DARK CURRENT
80 100
NORMALIZED TO:
V46 = 15V
IF = 0mA
TA = 25°C
800
600
400
200
0
-200
-400
-600
-800
-0.2 -0.1 0.0
IF = 2mA IF = 2mA
IF = 6mA
IF = 6mA
IF = 10mA
IF = 10mA
IF = 14mA
IF = 14mA
IF = 18mA
IF = 18mA
0.1 0.2
V46 - OUTPUT VOLTAGE (V)
I46 - OUTPUT CURRENT (µA)
Figure 2. Output Characteristics
10
110100
IF - INPUT CURRENT - mA
r(on) - Normalized Resistance
Figure 1. Resistance vs. Input Current
1
0.1
Normalized to:
IF = 16 mA
I46 = 5 µA RMS
Figure 3. LED Forward Voltage vs. Forward Current
2.0
1.8
1.6
1.4
1.2
1.0
0.1 101 100
IF - LED FORWARD CURRENT - mA
VF - FORWARD VOLTAGE (V)
0.8
TA = -55°C
TA = 25°C
TA = 100°C
NORMALIZED TO
IF = 16mA
I4-6 = 25µA RMS
TA = 25˚C
Observed
Range
Median
Device
3/19/03
Page 5 of 10
© 2003 Fairchild Semiconductor Corporation
PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
5
3
2
1
150100 150 200 250 300 350
V
4-6
- D.C. BIAS VOLTAGE - mA
∆r(on) - CHANGE IN RESISTANCE – %
Figure 7. Resistive non-linearity vs. D.C. Bias
4
0
I
4-6
= 10 µA RMS
r(on) = 200 Ω
3/19/03
Page 6 of 10
© 2003 Fairchild Semiconductor Corporation
PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
TYPICAL APPLICATIONS
AS A VARIABLE RESISTOR AS AN ANALOG SIGNAL SWITCH
ISOLATED VARIABLE ATTENUATORS
Distortion free attenuation of low level A.C. signals is accom-
plished by varying the IRED current, I
F
Note the wide dynamic
range and absence of coupling capacitors; D.C. level shifting or
parasitic feedback to the controlling function.
ISOLATED SAMPLE AND HOLD CIRCUIT
Accuracy and range are improved over conventional FET
switches because the H11F has no charge injection from the
control signal. The H11F also provides switching of either
polarity input signal up to 30V magnitude.
AUTOMATIC GAIN CONTROL
This simple circuit provides over 70db of stable gain control for
an AGC signal range of from 0 to 30mA. This basic circuit can
be used to provide programmable fade and attack for electronic
music.
MULTIPLEXED, OPTICALLY-ISOLATED A/D CONVERSION
The optical isolation, linearity and low offset voltage of the
H11F allows the remote multiplexing of low level analog signals
from such transducers as thermocouplers, Hall effect devices,
strain gauges, etc. to a single A/D converter.
ACTIVE FILTER FINE TUNING/BAND SWITCHING
The linearity of resistance and the low offset voltage of the
H11F allows the remote tuning or band-switching of active
filters without switching glitches or distortion. This schematic
illustrates the concept, with current to the H11F1 IRED’s
controlling the filter’s transfer characteristic.
TEST EQUIPMENT - KELVIN CONTACT POLARITY
In many test equipment designs the auto polarity function uses
reed relay contacts to switch the Kelvin Contact polarity. These
reeds are normally one of the highest maintenance cost items
due to sticking contacts and mechanical problems. The totally
solid-State H11F eliminates these troubles while providing
faster switching.
500K
VIN VOUT VIN VOUT
500K
50Ω
IF
H11F1
IF
H11F1
LOW FREQUENCY HIGH FREQUENCY
DYNAMIC RANGE ≈ 70db
FOR 0 ≤ IF ≤ 30mA
@10KHz DYNAMIC RANGE ≈ 50db
FOR 0 ≤ IF ≤ 30mA
@1MHz
VIN VOUT
IF
VIN
VOUT
IF
t
H11F1
C
+
-
VIN VOUT
IF
H11F1
AGC
SIGNAL
500K
+
-
V1
CALL V1
V2
Vn
H11F1
MSB MSB
CALL
Vn
DATA
INPUT
H11F1
LSB
LSB
H74A1
H74A1
A/D
CONVERTER
PROCESS
CONTROL
LOGIC
SYSTEM
DATA
ACQUISITION
IF1 ADJUSTS f1, IF2 ADJUSTS f2
IF1
A2 A3
A1
H11F1
IF2
H11F1 IF
AC
H11F1
IF
H11F1
IF
ITEST
BD
H11F1 IFH11F1
DEVICE
UNDER
TEST
PARAMETER
SENSING
BOARD
IF TO
A & B FOR
POLARITY 1
C & D FOR
POLARITY 2
3/19/03
Page 7 of 10
© 2003 Fairchild Semiconductor Corporation
PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
NOTE
All dimensions are in inches (millimeters)
Package Dimensions (Through Hole) Package Dimensions (Surface Mount)
Package Dimensions (0.4” Lead Spacing) Recommended Pad Layout for
Surface Mount Leadform
0.100 (2.54)
TYP
0.020 (0.51)
MIN
0.350 (8.89)
0.330 (8.38)
0.270 (6.86)
0.240 (6.10)
PIN 1
ID.
0.022 (0.56)
0.016 (0.41)
0.070 (1.78)
0.045 (1.14)
0.200 (5.08)
0.135 (3.43)
0.300 (7.62)
TYP
0° to 15°
0.154 (3.90)
0.100 (2.54)
SEATING PLANE
0.016 (0.40)
0.008 (0.20)
Lead Coplanarity : 0.004 (0.10) MAX
0.270 (6.86)
0.240 (6.10)
0.350 (8.89)
0.330 (8.38)
0.300 (7.62)
TYP
0.405 (10.30)
MAX
0.315 (8.00)
MIN
0.016 (0.40) MIN
2
5
PIN 1
ID.
0.016 (0.41)
0.008 (0.20)
0.100 (2.54)
TYP
0.022 (0.56)
0.016 (0.41)
0.070 (1.78)
0.045 (1.14)
0.200 (5.08)
0.165 (4.18)
4
3
0.020 (0.51)
MIN
1
6
SEATING PLANE
0.016 (0.40)
0.008 (0.20)
0.070 (1.78)
0.045 (1.14)
0.350 (8.89)
0.330 (8.38)
0.154 (3.90)
0.100 (2.54)
0.200 (5.08)
0.135 (3.43)
0.004 (0.10)
MIN
0.270 (6.86)
0.240 (6.10)
0.400 (10.16)
TYP
0° to 15°
0.022 (0.56)
0.016 (0.41)
0.100 (2.54) TYP
0.070
(
1.78
)
0.060
(
1.52
)
0.030
(
0.76
)
0.100
(
2.54
)
0.295
(
7.49
)
0.415
(
10.54
)
3/19/03
Page 8 of 10
© 2003 Fairchild Semiconductor Corporation
PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
ORDERING INFORMATION
MARKING INFORMATION
Option Order Entry Identifier Description
S.S Surface Mount Lead Bend
SD .SD Surface Mount; Tape and Reel
W.W 0.4" Lead Spacing
300 .300 VDE 0884
300W .300W VDE 0884, 0.4" Lead Spacing
3S .3S VDE 0884, Surface Mount
3SD .3SD VDE 0884, Surface Mount, Tape and Reel
H11F1
V XX YY K
1
2
6
43 5
Definitions
1Fairchild logo
2Device number
3VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4Two digit year code, e.g., ‘03’
5Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
3/19/03
Page 9 of 10
© 2003 Fairchild Semiconductor Corporation
PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
NOTE
All dimensions are in inches (millimeters)
Tape and reel quantity is 1,000 units per reel
Reflow Profile (Black Package, No Suffix)
Carrier Tape Specifications
4.0 ± 0.1
Ø1.55 ± 0.05
User Direction of Feed
4.0 ± 0.1
1.75 ± 0.10
7.5 ± 0.1
16.0 ± 0.3
12.0 ± 0.1
0.30 ± 0.05
13.2 ± 0.2
4.85 ± 0.20
0.1 MAX 10.30 ± 0.20
9.55 ± 0.20
Ø1.6 ± 0.1
• Peak reflow temperature: 225° C (package surface temperature)
• Time of temperature higher than 183° C for 60–150 seconds
• One time soldering reflow is recommended
215°C, 10–30 s
225 C peak
Time (Minute)
0
300
250
200
150
100
50
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5
Temperature (°C)
Time above 183° C, 60–150 sec
Ramp up = 3 C/sec
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
3/19/03
Page 10 of 10
© 2003 Fairchild Semiconductor Corporation
PHOTO FET OPTOCOUPLERS
H11F1 H11F2 H11F3
