NJG1107HB3 LOW NOISE AMPLIFIER GaAs MMIC QGENERAL DESCRIPTION NJG1107HB3 is a Low Noise Amplifier GaAs MMIC designed for GPS This amplifier provides low noise figure, high gain and high IP3 operated by single low positive power supply. This amplifier includes internal self-bias circuit and input DC blocking capacitor. This amplifier can be tuned to wide frequency point (1.5GHz~2.4GHz). An ultra small and ultra thin package of USB8-B3 is adopted. QFEATURES OLow voltage operation OLow current consumption OHigh small signal gain OLow noise figure OHigh Input IP3 OUltra small & ultra thin package QPACKAGE OUTLINE NJG1107HB3 +2.7V typ. 2.5mA typ. 17dB typ. @f=1.575GHz 1.1dB typ. @f=1.575GHz -4.0dBm typ. @f=1.575+1.5751GHz USB8-B3 (Package size: 1.5x1.5x0.75mm) QPIN CONFIGURATION HB3 Type (Top View) 4 5 3 6 2 A MP Pin Connection 1.RFOUT 2.N/C 3.EXTCAP 4.N/C 5.N/C 6.GND 7. RFIN 8. N/C 1 7 8 Orientation Mark Note: Specifications and description listed in this catalog are subject to change without prior notice. Ver.2006-07-31 -1- NJG1107HB3 QABSOLUTE MAXIMUM RATINGS (Ta=+25C, Zs=Zl=50ohm) PARAMETER SYMBOL CONDITIONS RATINGS UNIT 6.0 V Drain Voltage VDD Input Power Pin VDD=2.7V +15 dBm Power Dissipation PD At on PCB board 135 mW Operating Temp. Topr -40~+85 C Storage Temp. Tstg -55~+150 C QELECTRICAL CHARACTERISTICS (VDD=2.7V, f=1.575GHz, Ta=+25C, Zs=Zl=50ohm, TEST CIRCUIT) PARAMETER MIN TYP MAX UNIT freq1 1.57 1.575 1.58 GHz Drain Voltage VDD 2.5 2.7 5.5 V Operating Current IDD - 2.5 3.2 mA Small Signal Gain Gain 15.0 17.0 - dB NF - 1.1 1.3 dB Pin at 1dB Gain Compression point P-1dB -20.0 -16.0 - dBm Input 3rd Order Intercept Point IIP3 -6.0 -4.0 - dBm - 1.6 2.0 1.6 2.0 Operating Frequency Noise Figure SYMBOL RF Input Port VSWR VSWRi RF Output Port VSWR VSWRo -2- CONDITIONS RF OFF f=1.575+1.5751GHz RFin=-35dBm NJG1107HB3 QPIN CONFIGURATION Pin 1 Function Rfout 2,4,5,8 N/C 3 EXTCAP 6 GND 7 Rfin Description RF output and voltage supply pin. External matching circuits and a bypass capacitor is required. L3 is a RF choke inductor and C1 is a DC blocking capacitor. These elements are used as output matching circuit. C2 is a bypass capacitor. Neutral terminal. Should be connected to the ground. An external bypass capacitor is required. Ground pin. To keep good RF grounding performance, please use multiple via holes to connect with ground plane and this pin. RF input pin. A DC blocking capacitor is not required. An external matching circuit is required. -3- NJG1107HB3 QTYPICAL CHARACTERISTICS k factor vs. frequency NF vs. frequency (V 5 o DD (V =2.7V, Ta=25 C) 20 o DD =2.7V, Ta=25 C) 4 15 k factor NF (dB) 3 2 10 NF 5 1 0 1400 0 1450 1500 1550 1600 1650 1700 0 5 10 frequency (MHz) Pout vs. Pin (V 10 20 Pout, IM3 vs. Pin o DD 15 frequency (GHz) =2.7V, f=1575M Hz, Ta=25 C) (V 20 o DD =2.7V, f1=1575M Hz, f2=f1+100kHz, Ta=25 C) 5 0 Pout Pout, IM3 (dBm ) Pout (dBm ) 0 -5 Pout -10 -15 -20 -40 -60 -20 IM3 -80 -25 P-1dB(IN)=-14.8dBm IIP3=-2.8dBm -30 -100 -40 -35 -30 -25 -20 -15 -10 -5 0 -40 -35 -30 Pin (dBm) -15 -10 P-1dB(IN) vs. V DD o o -5 0 DD (f=1575M Hz, Ta=25 C) (f=1575M Hz, Ta=25 C) -6 6 -8 17 5 16 4 15 3 14 2 P-1dB(IN) (dBm) Gain 7 NF (dB) 19 Gain (dB) -20 Pin (dBm ) Gain, NF vs. V 18 -25 -10 -12 -14 -16 NF 13 12 2.5 3 3.5 4 V -4- DD 4.5 (V) 5 5.5 1 -18 0 -20 2.5 3 3.5 4 V DD 4.5 (V) 5 5.5 NJG1107HB3 QTYPICAL CHARACTERISTICS Gain, NF vs. Tem perature (V (V 3.5 -12 17 3 -13 16 2.5 Gain 18 2 15 NF 14 1.5 13 1 12 0.5 11 -50 0 P-1dB(IN) (dBm ) -11 NF (dB) 4 19 Gain (dB) DD P-1dB(IN) vs. Tem perature =2.7V, f=1575M Hz) -15 -16 -17 -18 -19 -50 0 o I DD vs. Tem perature (V =2.7V, f1=1575M Hz, f2=f1+100kHz, Pin=-35dBm) 5 3 DD =2.7V, RF=O FF) 2 OIP3 0 12 -1 IIP3 11 -2 10 -3 9 -4 DD 13 I 1 (mA) 4 14 IIP3 (dBm ) O IP3 (dBm ) 15 DD 100 Tem perature ( C) OIP3, IIP3 vs. Tem perature (V 50 o Tem perature ( C) 16 =2.7V, f=1575M Hz) -14 0 100 50 DD 3 2 1 8 -50 0 50 o Tem perature ( C) -5 100 0 -50 0 50 100 o Tem perature ( C) -5- NJG1107HB3 QTYPICAL CHARACTERISTICS S11,S22 VSWR S11, S22(~20GHz) -6- S21,S12 Zin, Zout S21, S12(~20GHz) NJG1107HB3 QTEST CIRCUIT N/C 4 5 3 N/C 6 2 GND N/C L4 22nH L2 12nH RF Input 7 C1 10pF RF Output 1 RFIN L1 27nH C3 1000pF EXTCAP N/C 8 RFOUT L3 12nH C2 1000pF VDD=2.7V QRECOMMENDED PCB DESIGN (Top View) Parts ID Comment L1, L3, L4 TDK (MLK1005) L2 TDK (MLG1005) C1~C3 MURATA (GRP15) C3 RF Input L2 L1 C1 L4 L3 C2 VDD RF Output PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH =0.4mm (Z0=50ohm) PCB SIZE=14.0mmX14.0mm -7- NJG1107HB3 QPACKAGE OUTLINE (USB8-B3) TERMINAL TREAT PCB Molding material UNIT WEIGHT 0.30.1 0.750.05 0.0380.01 4 . 0 0.1 8 1 6 2 5 3 0.3 0.20.1 R0 . 07 5 4 0.55 5 . 0 0.20.05 1.50.05 0.5 7 :Au :FR5 :Epoxy resin :mm :4mg 1.50.05 Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. -8- [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: NJR: NJG1107HB3-TE1 NJG1107HB3-TE2