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NJG1107HB3
Ver.2006-07-31
LOW NOISE AMPLIFIER GaAs MMIC
QGENERAL DESCRIPTION QPACKAGE OUTLINE
NJG1107HB3 is a Low Noise Amplifier GaAs MMIC
designed for GPS This amplifier provides low noise figure,
high gain and high IP3 operated by single low p ositive power
supply.
This amplifier includes internal self-bias circuit and input
DC blocking capacitor.
This amplifier can be tuned to wide frequency point
(1.5GHz~2.4GHz).
An ultra small and ultra thin package of USB8-B3 is
adopted.
QFEATURES
OLow voltage operation +2.7V typ.
OLow current consumption 2.5mA typ.
OHigh small signal gain 17dB typ. @f=1.575GHz
OLow noise figure 1.1dB typ. @f=1.575GHz
OHigh Input IP3 -4.0dBm typ. @f=1.575+1.5751GHz
OUltra small & ultra thin package USB8-B3 (Package size: 1.5x1.5x0.75mm)
QPIN CONFIGURATION
Note: Specifications and description listed in this catalog are subject to change without prior notice.
NJG1107HB3
HB3 Type
(Top View)
Pin Connection
1.RFOUT
2.N/C
3.EXTCAP
4.N/C
5.N/C
6.GND
7. RFIN
8. N/C
Orientation Mark
A
MP
1
2
3
7
6
54
8
NJG1107HB3
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QABSOLUTE MAXIMUM RATINGS (Ta=+25°C, Zs=Zl=50ohm)
PARAMETER SYMBOL CONDITIONS RATINGS UNIT
Drain Voltage VDD 6.0 V
Input Power Pin VDD=2.7V +15 dBm
Power Dissipation PD At on PCB board 135 mW
Operating Temp. Topr -40~+85 °C
Storage Temp. Tstg -55~+150 °C
QELECTRICAL CHARACTERISTICS
(VDD=2.7V, f=1.575GHz, Ta=+25°C, Zs=Zl=50ohm, TEST CIRCUIT)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT
Operating Frequency freq1 1.57 1.575 1.58 GHz
Drain Voltage VDD 2.5 2.7 5.5 V
Operating Current IDD RF OFF - 2.5 3.2 mA
Small Signal Gain Gain 15.0 17.0 - dB
Noise Figure NF - 1.1 1.3 dB
Pin at 1dB Gain
Compression point P-1dB -20.0 -16.0 - dBm
Input 3rd Order
Intercept Point IIP3 f=1.575+1.5751GHz
RFin=-35dBm -6.0 -4.0 - dBm
RF Input Port VSWR VSWRi - 1.6 2.0
RF Output Port VSWR VSWRo 1.6 2.0
NJG1107HB3
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QPIN CONFIGURATION
Pin Function Description
1 Rfout RF output and voltage supply pin. External matching circuits and a bypass
capacitor is required. L3 is a RF choke inductor a nd C1 is a DC blocking capacitor.
These elements are used as output matching circuit. C2 is a bypass capacitor.
2,4,5,8 N/C Neutral terminal. Should be connected to the ground.
3 EXTCAP An external bypass capacitor is required.
6 GND Ground pin. To keep good RF grounding performance, please use multiple via
holes to connect with ground plane and this pin.
7 Rfin RF input pin. A DC blocking capacitor is not required. An external matching circuit
is required.
NJG1107HB3
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QTYPICAL CHARACTERISTICS
0
1
2
3
4
5
1400 1450 1500 1550 1600 1650 1700
NF vs. freq uency
NF (dB)
fre qu e n cy (MH z )
NF
(VDD=2.7V, Ta=25oC)
-30
-25
-20
-15
-10
-5
0
5
10
-40 -35 -30 -25 -20 -15 -10 -5 0
Pout vs. Pin
Pout (dBm)
Pin (dBm )
Pout
P-1dB(IN)=-14.8dBm
(VDD=2.7V, f=1575MHz , Ta=25oC)
-100
-80
-60
-40
-20
0
20
-40-35-30-25-20-15-10 -5 0
Pou t, IM 3 vs. Pin
Pout, IM 3 (dBm)
Pin (dBm )
Pout
IM3
IIP3=-2.8dBm
(VDD= 2.7V, f1=1575M H z, f2=f1+100kHz, Ta=25oC)
0
5
10
15
20
0 5 10 15 20
k factor vs. freque ncy
k factor
frequen cy (GHz)
(VDD= 2 .7V, T a = 25 oC)
12
13
14
15
16
17
18
19
0
1
2
3
4
5
6
7
2.5 3 3.5 4 4.5 5 5.5
Ga in , N F vs . V DD
G a in ( d B )
NF (dB)
VDD (V)
(f=1575M H z, Ta=25oC)
Gain
NF
-20
-18
-16
-14
-12
-10
-8
-6
2.5 3 3.5 4 4.5 5 5.5
P-1dB(IN) vs. VDD
P-1dB(IN) (dBm)
VDD (V )
(f=1575MH z, Ta= 25oC)
NJG1107HB3
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QTYPICAL CHARACTERISTICS
11
12
13
14
15
16
17
18
19
0
0.5
1
1.5
2
2.5
3
3.5
4
-50 0 50 100
Ga in , NF v s . T e mp e r a tu re
Gain (dB)
NF (dB)
Tem p eratu re (oC)
(VDD= 2.7V , f=1 57 5MH z)
Gain
NF
-19
-18
-17
-16
-15
-14
-13
-12
-11
-50 0 50 100
P-1dB (IN) vs. Tem perature
P -1d B(IN ) (d B m)
Tem perature (oC)
(VDD= 2.7V, f=15 75M H z)
8
9
10
11
12
13
14
15
16
-5
-4
-3
-2
-1
0
1
2
3
-50 0 50 100
OIP 3 , IIP 3 v s. T e mp e ra tu re
OIP3 (dBm)
IIP3 (d B m)
Tem p eratu re (oC)
(VDD= 2.7V, f1=1575MH z, f2=f1+100kHz, Pin=-35dBm )
OIP3
IIP3
0
1
2
3
4
5
-50 0 50 100
IDD vs. T em perature
IDD (m A )
Tem perature (oC)
(VDD=2.7V, RF=OFF)
NJG1107HB3
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QTYPICAL CHARACTERISTICS
S11
,
S22 S21
,
S12
VSWR Zin
,
Zout
S11
,
S22
(
~20GHz
)
S21
,
S12
(
~20GHz
)
NJG1107HB3
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QTEST CIRCUIT
QRECOMMENDED PCB DESIGN
Parts ID Comment
L1, L3, L4 TDK (MLK1005)
L2 TDK (MLG1005)
C1~C3 MURATA (GRP15)
8
6
5
2
17
3
4
L1
27nH
L2
12nH
L3
12nH
L4
22nH C1
10pF
C2
1000pF
C3
1000pF
RF Input RF Output
RFOUT
N/C
RFIN
GND
EXTCAPN/C
N/C
N/C
VDD=2.7V
PCB (FR-4):
t=0.2mm
MICROSTRIP LINE WIDTH
=0.4mm (Z0=50ohm)
PCB SIZE=14.0mmX14.0mm
(Top View)
L4
C1
C2
C3
L3
L1
L2
RF
Input RF
Output
VDD
NJG1107HB3
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QPACKAGE OUTLINE (USB8-B3)
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this
p
roduct,
p
lease obe
y
the relatin
g
law of
y
ou
r
countr
y
.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle
with care to avoid these dama
g
es.
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
1.5±0.05
0.5
0.2±0.10.3
0.3±0.1
1
2
3
7
6
5
4
0.55
1.5±0.05
R0.075
0.1
0.2±0.05
0.75±0.05
0.038±0.01
8
0
.
5
0
.
4
TERMINAL TREAT :Au
PCB :FR5
Molding material :Epoxy resin
UNIT :mm
WEIGHT :4mg
