NTMFS4C032N
www.onsemi.com
2
3. This is the absolute maximum rating. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 15 Apk, EAS = 11 mJ.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain) RqJC 5.8
°C/W
Junction−to−Ambient – Steady State (Note 4) RqJA 50.8
Junction−to−Ambient – Steady State (Note 5) RqJA 166.6
Junction−to−Ambient – (t ≤ 10 s) (Note 4) RqJA 23.5
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA30 V
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSSt VGS = 0 V, ID(aval) = 6.1 A,
Tcase = 25°C, ttransient = 100 ns
34 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
14.9 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 24 V
TJ = 25°C 1.0
mA
TJ = 125°C 10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.3 2.1 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ4.8 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 30 A 6.11 7.35
mW
VGS = 4.5 V ID = 12 A 9.29 11.15
Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 40 S
Gate Resistance RGTA = 25°C 0.3 1.0 2.0 W
CHARGES AND CAPACITANCES
Input Capacitance CISS
VGS = 0 V, f = 1 MHz, VDS = 15 V
770
pF
Output Capacitance COSS 443
Reverse Transfer Capacitance CRSS 127
Capacitance Ratio CRSS/CISS VGS = 0 V, VDS = 15 V, f = 1 MHz 0.165
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 15 V; ID = 30 A
7.8
nC
Threshold Gate Charge QG(TH) 1.4
Gate−to−Source Charge QGS 2.9
Gate−to−Drain Charge QGD 3.7
Gate Plateau Voltage VGP 3.6 V
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 15.2 nC
SWITCHING CHARACTERISTICS (Note 7)
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.