APT1204R7BFLL APT1204R7SFLL 1200V 3.5A 4.700 POWER MOS 7 R FREDFET D3PAK (R) Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with Microsemi's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg VDSS D * Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol TO-247 G S All Ratings: TC = 25C unless otherwise specified. Parameter APT1204R7B_SFLL UNIT 1200 Volts Drain-Source Voltage ID Continuous Drain Current @ TC = 25C IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 135 Watts Linear Derating Factor 1.08 W/C PD TJ,TSTG 1 Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy 1 Amps 14 TL EAS 3.5 -55 to 150 C 300 Amps 3.5 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 10 4 mJ 425 STATIC ELECTRICAL CHARACTERISTICS RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 1200 Drain-Source On-State Resistance 2 (VGS = 10V, ID = 1.75A) TYP MAX UNIT Volts 4.70 Ohms Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 1mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com A 7-2006 BVDSS Characteristic / Test Conditions 050-7390 Rev B Symbol APT1204R7B_SFLL DYNAMIC CHARACTERISTICS Symbol C iss Characteristic Test Conditions Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V C rss Reverse Transfer Capacitance f = 1 MHz Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr 3 RESISTIVE SWITCHING VGS = 15V VDD = 600V ID = 3.5A @ 25C Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25C 6 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ns 115 VDD = 800V, VGS = 15V 23 ID = 3.5A, RG = 5 INDUCTIVE SWITCHING @ 125C 6 nC 24 RG = 1.6 Eon UNIT pF 36 31 4 21 7 2 20 VDD = 600V Fall Time MAX 715 130 ID = 3.5A @ 25C Turn-off Delay Time tf TYP VGS = 10V Rise Time td(off) MIN J 135 VDD = 800V, VGS = 15V ID = 3.5A, RG = 4.3 25 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions Symbol MIN TYP MAX UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) 14 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID 3.5A) 1.3 Volts dv/ Peak Diode Recovery 18 V/ns dt dv/ dt 3.5 5 t rr Reverse Recovery Time (IS = -ID 3.5A, di/dt = 100A/s) Tj = 25C 250 Tj = 125C 515 Q rr Reverse Recovery Charge (IS = -ID 3.5A, di/dt = 100A/s) Tj = 25C 0.5 Tj = 125C 1.1 IRRM Peak Recovery Current (IS = -ID 3.5A, di/dt = 100A/s) Tj = 25C 8.3 Tj = 125C 11.5 Amps ns C Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.90 RJC Junction to Case RJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.9 0.7 0.60 0.5 Note: 0.40 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-7390 Rev B 7-2006 1.0 0.3 SINGLE PULSE 0.20 0.1 0 t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0.05 10-5 10-4 C/W 4 Starting Tj = +25C, L = 69.39mH, RG = 25, Peak IL = 3.5A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID3.5A di/dt 700A/s VR 1200 TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.80 UNIT 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 0.386 0.508 Dissipated Power (Watts) 0.0903 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. ID, DRAIN CURRENT (AMPERES) TC ( C) ZEXT TJ ( C) 0.00336 8 6 TJ = -55C TJ = +125C 4 TJ = +25C 2 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 3 2.5 2 1.5 1 0.5 25 4 6V 3 2 5.5V 1 5V 1.40 V NORMALIZED TO = 10V @ 1.75A GS 1.30 1.20 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80 0 1 2 3 4 5 6 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT D V 1.05 1.00 0.95 0.90 0.85 -50 1.2 = 1.75A GS = 10V 2.0 1.5 1.0 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 1.1 1.0 0.9 0.8 7-2006 I 1.10 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 0.0 6.5V 1.15 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 3.5 0 5 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7390 Rev B 0 7V 6 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE VGS =15,10 & 8V 7 0 FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 10 APT1204R7 B_SFLL 8 14 OPERATION HERE LIMITED BY RDS (ON) 100S 1,000 5 1mS 1 TC =+25C TJ =+150C SINGLE PULSE 0.5 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 10 10mS I = 3.5A D 12 VDS=100V VDS=250V 8 VDS=400V 4 0 0 5 10 15 20 25 30 35 40 45 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 500 Coss 100 50 Crss 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 16 Ciss 10 1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) APT1204R7 B_SFLL 3,000 100 50 10 TJ =+150C TJ =+25C 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 35 40 30 35 td(off) V DD 20 = 800V G T = 125C J L = 100H 15 10 0 1 3 4 5 6 ID (A) FIGURE 14, DELAY TIMES vs CURRENT 15 tr 3 4 5 6 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 0 1 2 Eon Eon SWITCHING ENERGY (J) Eon and Eoff (J) 20 200 140 7-2006 25 0 2 160 050-7390 Rev B tf J L = 100H 5 180 120 100 V DD R 80 G = 800V = 4.3 T = 125C J 60 L = 100H E ON includes 40 diode reverse recovery 20 0 = 800V = 4.3 10 td(on) 5 0 G T = 125C = 4.3 R DD R 30 25 tr and tf (ns) td(on) and td(off) (ns) V 160 V 120 D 1 2 3 4 5 6 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT = 800V = 3.5A T = 125C J L = 100H EON includes 80 diode reverse recovery 40 Eoff Eoff 0 DD I 0 0 10 20 30 40 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE Typical Performance Curves APT1204R7 B_SFLL Gate Voltage 10% 90% TJ125C Gate Voltage tf Drain Current tr 90% 10% 5% TJ125C td(off) td(on) Drain Voltage 90% 5% 10% Drain Voltage Drain Current 0 Switching Energy Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT15DQ120 APT60D120B IC V CC V CE G D.U.T. Figure 20, Inductive Switching Test Circuit 3 TO-247 Package Outline 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) Revised 4/18/95 Drain 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) 13.41 (.528) 13.51 (.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.21 (.087) 2.59 (.102) 19.81 (.780) 20.32 (.800) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} Gate Drain Source Source Drain Gate Dimensions in Millimeters (Inches) Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Drain) and Leads are Plated 050-7390 Rev B 0.46 (.018) 0.56 (.022) {3 Plcs} 7-2006 3.50 (.138) 3.81 (.150)