050-7390 Rev B 7-2006
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with Microsemi's
patented metal gate structure.
• Lower Input Capacitance • Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive
• Lower Gate Charge, Qg • TO-247 or Surface Mount D3PAK Package
APT1204R7BFLL
APT1204R7SFLL
1200V 3.5A 4.700ΩΩ
ΩΩ
Ω
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 1.75A)
Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
UNIT
Volts
Ohms
µA
nA
Volts
MIN TYP MAX
1200
4.70
250
1000
±100
35
APT1204R7B_SFLL
1200
3.5
14
±30
±40
135
1.08
-55 to 150
300
3.5
10
425
POWER MOS 7 R FREDFET
TO-247
D
3
PAK
Microsemi Website - http://www.microsemi.com
050-7390 Rev B 7-2006
DYNAMIC CHARACTERISTICS APT1204R7B_SFLL
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID 3.5A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -ID 3.5A, di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -ID 3.5A, di/dt = 100A/µs)
Peak Recovery Current
(IS = -ID 3.5A, di/dt = 100A/µs)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
µC
Amps
MIN TYP MAX
3.5
14
1.3
18
Tj = 25°C 250
Tj = 125°C 515
Tj = 25°C 0.5
Tj = 125°C 1.1
Tj = 25°C 8.3
Tj = 125°C 11.5
Symbol
RθJC
RθJA
MIN TYP MAX
0.90
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 69.39mH, RG = 25Ω, Peak IL = 3.5A
5dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID3.5A di/dt ≤ 700A/µs VR ≤ 1200 TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 600V
ID = 3.5A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 600V
ID = 3.5A @ 25°C
RG = 1.6Ω
INDUCTIVE SWITCHING @ 25°C
VDD = 800V, VGS = 15V
ID = 3.5A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
VDD = 800V, VGS = 15V
ID = 3.5A, RG = 4.3Ω
MIN TYP MAX
715
130
36
31
4
21
7
2
20
24
115
23
135
25
UNIT
pF
nC
ns
µJ
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
PDM
SINGLE PULSE
ZθJC, THERMAL IMPEDANCE (°C/W)
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
0.80
0.60
0.40
0.20
0
0.5
0.1
0.3
0.7
0.9
0.05
050-7390 Rev B 7-2006
Typical Performance Curves APT1204R7 B_SFLL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VGS(TH), THRESHOLD VOLTAGE BVDSS, DRAIN-TO-SOURCE BREAKDOWN RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES)
(NORMALIZED) VOLTAGE (NORMALIZED)
0 5 10 15 20 25 30
012345678 0 1 2 3456
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
10
8
6
4
2
0
3.5
3
2.5
2
1.5
1
0.5
0
2.5
2.0
1.5
1.0
0.5
0.0
8
7
6
5
4
3
2
1
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V
VGS=20V
6V
6.5V
7V
5V
VGS =15,10 & 8V
5.5V
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.386 0.508
0.00336 0.0903
Dissipated Power
(Watts)
T
J
(C) T
C
(C)
Z
EXT
are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
EXT
NORMALIZED TO
VGS = 10V @ 1.75A
ID = 1.75A
VGS = 10V
APT1204R7 B_SFLL
050-7390 Rev B 7-2006
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
IDR, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
1 10 100 1200 0 10 20 30 40 50
0 5 10 15 20 25 30 35 40 45 0.3 0.5 0.7 0.9 1.1 1.3 1.5
14
10
5
1
0.5
16
12
8
4
0
Crss
Ciss
Coss
TJ
=+150°C
TJ
=+25°C
VDS=250V
VDS=100V
VDS=400V
ID = 3.5A
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
10mS
1mS
100µS
3,000
1,000
500
100
50
10
100
50
10
1
ID (A) ID (A)
FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A) RG, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
VDD = 800V
RG = 4.3Ω
TJ = 125°C
L = 100µH
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
Eon and Eoff (µJ) td(on) and td(off) (ns)
SWITCHING ENERGY (µJ) tr and tf (ns)
0123456 0123456
0 1 2 3 4 5 6 0 10 20 30 40 50
VDD = 800V
RG = 4.3Ω
TJ = 125°C
L = 100µH
VDD = 800V
RG = 4.3Ω
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery
VDD = 800V
ID = 3.5A
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery
35
30
25
20
15
10
5
0
180
160
140
120
100
80
60
40
20
0
40
35
30
25
20
15
10
5
0
200
160
120
80
40
0
050-7390 Rev B 7-2006
Typical Performance Curves APT1204R7 B_SFLL
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
TO-247 Package Outline
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
{3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Drain
(Heat Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
D3PAK Package Outline
Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
I
C
D.U.T.
APT60D120B
V
CE
Figure 20, Inductive Switching Test Circuit
V
CC
G
Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions
90%
90%
td(off)
tf
10%
0Drain Current
Drain Voltage
Gate Voltage TJ125°C
10%
90%
Switching Energy
td(on)
tr
10% 5%
Drain Current
Drain Voltage
Gate Voltage
TJ125°C
5%
Switching Energy
APT15DQ120
