LMC10NEG3347-J59 - Bookham Technology, Inc.

Data Sheet

Negative Chirp - High Power

The LMC10NEG product, containing the Bookham Ultra High

Power Strained Layer DFB laser chip and negative chirp InP

MZ modulator, has been specifically designed for use in 10

Gb/s high performance regional metro and long haul DWDM

systems. By co-packaging the laser, locker, modulator and MZ

Bias Control Tap in a package with the same footprint area as

the industry standard 14-pin, the LMC10 series provides

Mach-Zehnder performance at a price similar to lower

performance alternatives. The provision of the MZ bias control

tap offers the option of MZ bias point optimisation for best

transmitted optical waveformover life. The high output power,

integral wavelength locking and high extinction ratio provides

excellent OSNR to allow the device to be employed on

multi-span long haul links.

Features:

•Mean modulated power >+4dBm over life

and temperature

•Negative Chirp (up to 1600ps/nm applications)

• Co-planar differential RF drive ≤2.7 volts

• Suitable for 50GHz ITU applications with +/-20pm λ

accuracy over life

• Low Power Dissipation

• Industry Standard 14-pin footprint area

• Pins on one side to allow increased system density

•Cand L band

• Unrivalled performance vs size

• Qualified to Telcordia GR-468 CORE

• RoHS 5/6 compliant

Applications:

•10Gb/s Long Haul DWDM multi-span dispersion

compensated links

•Regional Metro single spans with no

dispersion compensation

•10Gb/s Overlay for Metro Networks

•2.5Gb/s Long Haul DWDM multi-span

non dispersion compensated links

10Gb/s Compact InP MZ Modulator

with DWDM Laser

LMC10NEG

Data Sheet

Characteristics

Parameter Conditions Min Typ Max Unit

Module and Modulator Parameters

Case temperature [Tcase] External temperature of Tx case [1] -5 75 °C

Modulated output power EOL over temperature 4 7 dBm

Power variation over case temperature [2] -1.3 0.5 dB

AC extinction ratio EOL, 10.709Gb/s [3] 10 11.5 dB

Dispersion penalty over temperature 10.709Gb/s, EOL [4] 2 dB

Data bar arm bias <9mA arm bias current -4 -1.1 V

Data arm bias <9mA arm bias current -2.2 -0.5 V

Modulation drive voltage per arm, pk-pk, 10.709Gb/s [5] 1.8 2.7 V

Optical rise time, fall time 20% - 80% 35 ps

Tolerable link optical reflection [6] -14 dB

Output optical returnloss [7] 20 dB

Optical crossing level (Mode 1) [8] 48 50 52 %

Optical crossing level (Mode 2) [9] 40 60 %

Modulator bandwidth S21, -3dB 10 GHz

Using the LMC10NEG

The LMC10NEG can be used in two ways:

Mode 1.

With dynamic modulator arm DC bias control where the MZ bias control tap is used in a control loop to optimise the optical

crossing point over life. Details of operating in this mode are given in applications note AN0136.

Mode 2.

Fixed modulator arm DC bias where the tap function is not used. Backwards compatible with the LMC10NEH device.

Data Sheet

Characteristics (continued)

Parameter Conditions Min Typ Max Unit

Laser Source Parameters

Laser forward current EOL C & L-Band. Wavelength locked 305 mA

Change in laser forward current From SOL to EOL -20 20 mA

Laser threshold current EOL 20 85 mA

Laser forward voltage EOL at locked wavelength 2.3 V

Laser linewidth CW FWHM 5 20 MHz

Side mode suppression ratio [SMSR] At locked wavelength 40 50 dB

Average relative intensity noise [RIN] 200MHz to 8GHz -140 dB/Hz

Parameter Conditions Min Typ Max Unit

TEC and Thermal Parameters

Thermistor resistance For locked wavelength [15] 4500 10100 Ohms

TEC current EOL, T Case = 75°C 1.1 A

TEC voltage EOL, T Case = 75°C 3 V

Module power dissipation EOL, T Case = 75°C 1.5 4 W

Parameter Conditions Min Typ Max Unit

Wavelength Locker Parameters

Etalon photocurrent at

locked wavelength EOL 0.1 2 mA

Reference photocurrent

at locked wavelength EOL 0.1 2 mA

Etalon slope at locked wavelength EOL [10] 0.3 7 uA/pm

Reference slope at locked wavelength EOL 0.1 3 uA/pm

Etalon / reference current ratio

at locking point [11] 0.2 2ratio

Wavelength accuracy over life

and temperature[12] -20 20 pm

Laser drive current tuning coefficient [13] 3 4 7 pm/mA

Note:

AC parameters such as extinction ratio and waveform crossing may be system dependent.

Data Sheet

Parameter Conditions Min Typ Max Unit

Bias Control Tap Parameters

Tap bias voltage [14] -5.1 -5 V

Tap photocurrent 10 mA

Characteristics (continued)

Note: AC parameters such as extinction ratio and waveform

crossing may be system dependent.

S11 Test Mask

Data Sheet

Glossary

BFM Back Facet Monitor diode

CW Continuous wave

EOL End of life

FWHM Full width half maximum

MZ Mach-Zehnder interferometer

SOL Start of life

Tcase Case temperature

Pk-pk Peak to peak

BCT Bias Control Tap

Notes to Characteristic Tables

[1] Refer to Bookham applications document AN0117 for

Tx case temperature measurement definition.

[2] Power variation over case temperature is measured

reference to 30°C case temperature.

[3] Measured reference to a high speed sampling

oscilloscope (unfiltered). EOL figuredoes not include

modulator driver component ageing if applicable.

[4] Measured with 1600ps/nm chromatic dispersion, ITU-T

G652 optical fibre, 10.709Gb/s, 223-1 PRBS NRZ

sequence. The penalty calculation is made at a BER

level of 10-10. RX OSNR > 30dB [35dB target], RBW

of 0.1nm using a Bookham standardreceiver with

differential drive to modulator. The device is driven

directly from a patterngenerator.Receiver decision point

self optimised for amplitude and phase.

[5] Measured at the input to the LMC10NEG. Driver

selection must take into account modulator driver to

transmitter transmission line losses. Refer to Bookham

applications document AN0137.

[6] Optical return loss of plant attached to LMC10NEG

fibre connector.

[7] Optical returnloss looking back into the LMC10NEG

averaged over polarisation, with target value of -27dB.

[8] This is a requirement for the crossing control loop over

life and temperature. The accuracy over life and

temperature will be a function of the control loop circuit

design. Reference application note AN0136.

[9] Assuming 50% crossing level set at start of life. EOL

figure does not include modulator driver component

ageing if applicable.

[10] Slope of the etalon signal can be either positive

or negative.

[11] Maintain the start of life locking ratio over life to hold

wavelength constant.

[12] Assumes wavelength is set to ITU wavelength at start of

life, closed loop wavelength control by maintaining

constant locking ratio.

[13] Wavelength variation with change in laser drive current at

constant temperature.

[14] The MZ bias control tap responsivity is bias voltage

dependent.

[15] The thermistor current should not exceed 100 µA to

prevent self-heating effects. The thermistor resistance

varies with temperature according to the following

Steinhart-Hart equation, where C1= 1.2156x10-3, C2=

2.1925x10-4, C3=1.5241x10-7 for the thermistor type

used. Temperature is required in Kelvin.

Note: AC parameters such as extinction ratio and waveform

crossing may be system dependent.

Data Sheet

Absolute Maximum Ratings

Condition Min Typ Max Unit

Storage case temperature -40 85 C

Laser Current 600 mA

Laser Voltage -2 V

MZ arm voltage (DC) [1] -12 0 V

MZ modulator arm bias currents (DC) [2] 12 mA

BFM bias -15 0 V

MZ bias control tap voltage -6 0 V

MZ bias control tap current 10 mA

TEC voltage [5] -3 3 V

TEC current [5] -1.8 1.8 A

Output optical power [continuous operation] 13 dBm

Lead soldering temperature [3] 260 °C

Fiber bend radius [4] 30 mm

Notes:

[1] With laser off. Do not forward bias the MZ arms or the bias control tap.

[2] Do not exceed the MZ and bias control tap maximum currents.

[3] Maximum soldering time of 10 seconds, Tx case and fiber must not be subjected to extremes of temperature.

[4] Minimum fiber bend radius of 30mm, fiber may be damaged if exceeded.

[5] Thermistor operating range must not be exceeded.

ESD Rating

This product is ESD compliant to Class 2 as defined by Telcordia TA-TSY-000870.

ESD precautions must be used when handling this device and arerequired in both

production and R&D environments.

Data Sheet

Schematic Diagram

Pin Out Table

Pin # Function Pin # Function

1 Data bias 9 Case ground

2 Data bar bias 10 TEC -

3Connect to ground 11 TEC +

4 MZ bias control tap 12 Laser anode

5Case ground 13 Thermistor

6Data bar 14 Etalon BFM anode

7 Case ground 15 BFM common cathode

8 Data 16 Reference BFM anode

Data Sheet

Pin Definitions

Pin 1 MZ data DC Bias input and Pin 2 MZ data-bar DC

Bias input

DC bias voltages for data and data-bar MZ arms. These pins

must be connected to a low noise negative DC voltage,

typically around -2V (WRT case). These voltages are defined

for each Tx in the deliverable data. A precision voltage source

must be used, which is capable of sourcing up to 10mA to

each pin. Refer to Bookham applications note AN0130 for

circuit implementation and filtering suggestions.

Pin 3

Connect to ground.

Pin 4 Bias Control Tap

The MZ bias control tap pin must be biased to -5V.

The supply should be regulated if the device is used

in mode 1 as the monitor diode responsivity is voltage

dependent.

Pins 5, 7 and 9 Ground

Package ground connections.

Pin 6 MZ Data-bar modulation input and Pin 8 MZ Data

modulation input

Operation is typically using differential electrical drive voltages

applied to both the Data and Data-bar MZ Modulator inputs.

Typical amplitude is 2.0V peak-to-peak. AC RF coupling must

be used.

Pin 10 TEC (-) and Pin 11 TEC (+)

The LMC10 contains a Peltier heatpump. Applying a negative

voltage on Pin 10 with respect to Pin 11 will cause the

internal optics to be cooled relative to the case temperature.

Reversing the applied voltage will cause the internal

structures to be heated. The heatpump must be used in

afeedback controlled circuit in conjunction with the

internal thermistor.

Pin 12 Laser Anode

The laser is operated with a forward bias current, the laser

cathode being connected internally to case ground.

Pin 13 Thermistor

The thermistor is used in the TEC control loop for keeping the

internal temperature at a constant value. It has a nominal

resistance of 10k Ohms at a temperature of 25ºC and is not

polarity sensitive, although one side of the thermistor is

connected to package ground. Operating current should be

limited to less than 100µA to prevent self heating errors.

The exact thermistor value is supplied with each Tx as

part of the deliverable test data to ensure the correct

operating wavelength.

Pin 14 Back Facet Monitor Diode Anode (Etalon)

The signal from this diode carries the spectral response of the

wavelength filter.

Pin 15 Back Facet Monitor Diode Common Cathode

Common connection for monitor diode cathodes.

Pin 16 Back Facet Monitor Diode Anode (Reference)

The signal from this diode is the reference signal and

indicates the power of the rear facet of the laser. The signals

from the reference and etalon monitor diodes are used in a

control loop to maintain the wavelength of the laser at the

defined lock point.

Operating the LMC10NEG

Control Schemes for the LMC10NEG

Arm DC Bias Voltage Control

Adynamic control scheme can be implemented to maintain

the bias points on the left and right arms of the MZ modulator

at the quadrature point. This will maintain the output pulse

train with a 50% eye crossing level. The control circuit needs

to track any over life change in the bias points, thereby

maintaining the 50% eye crossing condition.

Benefits of Using Control Schemes

The product can be used without the control scheme as

discussed above. But there are benefits of implementing

the control loop:

Maintaining the optical eye crossing to 50% through the life of

the product will minimise the variation in extinction ratio and

reduce variations in link dispersion penalty.

Summary

For more demanding applications at higher link lengths or

tighter link budgets the LMC10NEG may be used with a

dynamic control scheme which will provide MZ armbias point

control for 50% optical eye crossing.

Use of the BCT in a control loop can offer improved optical

eye shape stability compared to open loop performance.

Data Sheet

Wavelength Locker for the LMC10NEG

The wavelength locker for the LMC10NEG includes two photodiodes: the Reference photodiode provides a photocurrent

proportional to the laser chip facet power, and the Etalon photodiode provides a photocurrent related to wavelength (frequency).

In order to lock the LMC10NEG wavelength, a control circuit should be used which maintains the laser submount temperature

constant over life and then controls the wavelength by varying the laser forward current to keep the ratio of the etalon and

reference photodiode currents (Locking Ratio) constant. This may be achieved by keeping the discrimination value (LR x Iref)–Iet)

at zero, whereLR is the target Locking Ratio.

Refer to applications document AN0142 for further information on wavelength locking.

Lockpoint

Data Sheet

Package Outline Drawing

Data Sheet

Typical 10Gb/s Eye Diagram

Test Conditions: 10.709Gb/s 223-1PRBS NRZ data.

Typical Over Fibre Performance (SMF-28)

Test Conditions: 10.709Gb/s 223-1PRBS NRZ data, BER10-12.

Performance over fibre

Dispersion (ps/nm)

Penalty (dB)

Data Sheet

LMC10 Mounting Guidelines

The device must be attached to a heat-sink capable of

dissipating a minimum of 4W without exceeding the

maximum case temperature. The surface of the heat-sink

must be smooth (< 0.8 micron Ra) and flat (<24.8 microns

over the area and not convex in form). Attachment screws,

thermal interface compounds or interface pads may be used

but must not exert stress upon the device. Refer to Bookham

applications note AN0117.

Note on Maximum Ratings and Handling Precautions

Applications Support

The following application notes areavailable to supportcustomers using the LMC10NEG:

It is the nature of this device that unprotected semi-conductor

junctions are connected directly to external package pins.

Protection of these junctions would have an adverse effect

on the performance of the device or the flexibility in its

application and use. The user is requested to observe the

‘Absolute Minimum and Maximum Ratings’ in order to

prevent damage or destruction of the device. In particular

forward biasing the modulator, attenuator or power monitor

junctions will lead to catastrophic damage if the current or

voltage limits are exceeded. These junctions are also sensitive

to ESD and electrical transients. The laser is similarly sensitive

to reverse bias, ESD and electrical transients. These can lead

to catastrophic device damage. The user is requested to

ensure that operation of any control or bias circuits do not

introduce electrical transients or adverse bias conditions

during switch-on, switch-off or calibration and set-up

routines. Appropriate ESD precautions are required in both

production and R&D environments.

Component Mounting Recommendations For the Bookham AN0117

LMC10 InP MZ Transmitter Module

LMC10NEG Dynamic MZ Modulator DC Bias Control Recommendations for AN0136

high Performance Power & Eye Mask Stability

Recommended RF drivers for the LMC10 Integrated AN0137

Optical Transmitter Product Portfolio

LMC10 Implementing Dynamic Wavelength Locker Loops AN0142

For DWDM Optical Systems

Characterisation of the LMC10 InP MZ in a 2.5Gb/s

Optical Systems Environment AN0138

Compact LMC10 InP MZ Evaluation BoardUser Document AN0130

Optical component evaluation platforms are available for all Bookham Technology optical products.

Contact your regional sales representative for further information.

Data Sheet

Deliverable Data

The following deliverable data is provided as a paper copy with each device and can also

be made available as a text file from a customer specific site on a Bookham server with

password protection.

Note:

[1] Positive sign indicates etalon photocurrent increasing with wavelength at lock point.

Refer to Bookham applications document AN0142 for locker slope definitions.

AC specified parameters may be derived from DC measurement data.

Parameter Units

Thermistor operating resistance Ohms

Laser bias current mA

Wavelength operating nm

MZ bias data Volts

MZ bias data-bar Volts

Locking reference current mA

Locking etalon current mA

Locking current ratio -

Locker slope sign [1] +or -

Laser threshold mA

MZ drive voltage amplitude Volts

Wavelength target (ITU-T) nm

Thermistor temperature °C

Laser tuning current coefficient pm/mA

BFM etalon locker slope µA/pm

BFM reference locker slope µA/pm

Mean modulated optical power dBm

AC extinction ratio dB

Target eye crossing %

Data Sheet

Important Notice

Performance figures, data and any illustrative material

provided in this data sheet are typical and must be

specifically confirmed in writing by Bookham before

they become applicable to any particular order or

contract. In accordance with the Bookham policy of

continuous improvement specifications may change

without notice. The publication of information in this

data sheet does not imply freedom from patent or other

protective rights of Bookham or others. Further details

are available from any Bookham sales representative.

Contact Information

BH12846 Rev 1.0 January 2007.

North America

Bookham Worldwide

Headquarters

2584 Junction Ave.

San Jose

CA 95134

USA

•Tel: +1 408 919 1500

•Fax: +1 408 919 6083

www.bookham.com

sales@bookham.com

Europe

Paignton Office

Brixham Road

Paignton

Devon

TQ4 7BE

United Kingdom

•Tel: +44 (0) 1803 66 2000

•Fax: +44 (0) 1803 66 2801

Asia

Shenzhen Office

2Phoenix Road

Futian Free Trade Zone

Shenzhen 518038

China

• Tel: +86 755 33305888

•Fax: +86 755 33305805

+86 755 33305807

Ordering Information:

LMC10NEG

(Wavelength) – (Connector)

**** J28 = SC/PC

J57 = LC

J59 = MU

**** = last four digits of wavelength value

e.g. for λp=1533.47nm, ****=3347

WDM wavelength range: C-Band 1528-1565 nm

L-Band 1570-1606 nm

Standardfibre length 1000 +/- 100 mm [blue jacket]

Other connector types are available on request

To order the LMC10 on an evaluation board, please use the prefix

EV in front on the product code e.g. EVLMC10NEG****-J28

Bookham reserve the right to change without notice.

MAX POWER < 500mW

WAVE LENGTH 1480 - 1620nm

CLASS IIIb LASER PRODUCT

This product complies with

21CFR 1040.10

REFERENCE IEC 60825-1 Edition 1.2

INVISIBLE LASER RADIATION

DO NOT VIEW DIRECTLY

WITH OPTICAL INSTRUMENTS

CLASS 1M LASER PRODUCT

Caution - use of controls or adjustments or

performance of procedures other than

those specified herein may result in

hazardous radiation exposure.

RoHS Compliance

Bookham is fully committed to environment

protection and sustainable development and has

set in place a comprehensive program for

removing polluting and hazardous substances from

all of its products. The relevant evidence of RoHS

compliance is held as part of our controlled

documentation for each of our compliant products.

RoHS compliance parts are available to order,

please refer to the ordering information section for

further details.

ISO14001:1996

EMS 504193

TL9000 Rev 3.0 (ISO9001:2000)

FM15040