PDP SPMTM
©2006 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
March 2007
FVP18030IM3LSG1 Rev. A
FVP18030IM3LSG1 Sustain
FVP18030IM3LSG1
Sustain
Features
• Use of high speed 300V IGBTs with parallel FRDs
• Single-grounded power supply by means of built-in HVIC
• Sufficient current driving capability for IGBTs due to adding a
buffer
• Isolation rating of 1500Vrms/min.
• Low leakge current due to using an insulated metal sub-
strates
Applications
• Sustain Part of a PDP(Plasma display panel)
General Description
It is an advanced samart power module(SPMTM) that Fairchild
has newly developed and designed to provide very compact
and optimized performance for the sustaining circuit of PDP
driving system. It contains HVICs, buffers and low-loss high
speed IGBTs that are needed to compose the sustaining cir-
cuits. Under voltage lock-out protection function enhances the
system reliabilty. The high speed built-in HVIC provides opto-
coupler-less single power supply IGBT gate driving capability
that further reduce the overall system size of PDP and the buffer
provides high current driving capability of IGBTs.
Package Outlines
Figure 1.
2www.fairchildsemi.com
FVP18030IM3LSG1 Rev. A
FVP18030IM3LSG1 Sustain
Pin Configurations
Figure 2.
Top View
3www.fairchildsemi.com
FVP18030IM3LSG1 Rev. A
FVP18030IM3LSG1 Sustain
Pin Descriptions
Pin Number Pin Name Pin Descriptions
1 COML Low-side Signal Ground
2 VINL Low-side Signal Input
3 VCCL Low-side Supply Voltage for HVIC
4 VBL Low-side Floating Supply Voltage for Buffer IC and IGBT Driving
5 GL Low-side Gate
6 VSL Low-side Floating Ground for Buffer IC and IGBT Driving
7 IGND IMS Ground
8 COMH High-side Signal Ground
9 VINH High-side Signal Input
10 VCCH High-side Supply Voltage for HVICg
11 VBH High-side Floating Supply Voltage for Buffer IC and IGBT Driving
12 GH High-side Gate
13 VSH High-side Floating Ground for Buffer IC and IGBT Driving
14 CH High-side IGBT Collector
15 EH High-side IGBT Emitter
16 AH High-side Diode Anode
17 CL Low-side IGBT Collector
18 AL Low-side Diode Anode
19 EL Low-side IGBT Emitter
4www.fairchildsemi.com
FVP18030IM3LSG1 Rev. A
FVP18030IM3LSG1 Sustain
Internal Equivalent Circuit and Input/Output Pins (Bottom View)
Figure 3.
HVIC
VB
OUT
VS
COM
IN
VCC
(6) VSL
(18) AL
(17) CL
(10)VCCH
Buffer IC
OUT
COMCOM
IN
VCC
(19) EL
(5) VBL
(3) VCCL
(12) GH
(15) EH
(16) AH
HVIC
(8) COMH
(14) CH
(13) VSH
(1) COML
Buffer IC
OUT
COM
COM
IN
VCC
(2) VINL
(9) VINH
(4) GL
VB
OUT
VS
COM
IN
VCC
(11) VBH
(7) IGND
5www.fairchildsemi.com
FVP18030IM3LSG1 Rev. A
FVP18030IM3LSG1 Sustain
Absolute Maximum Ratings (TC = 25°C, Unless Otherwise Specified)
Notes :
1. Pulse Width = 100µsec, Duty = 0.1; half sine wave
*Icp limited by MAX Tj
Thermal Resistance
Symbol Parameter Conditions Rating Units
VCC Control Supply Voltage Applied between VCCL-COML, VCCH - COMH 20 V
VBS Control Bias Voltage Applied between VBL - VSL, VBH - VSH 20 V
VIN Input Signal Voltage Applied between VINL-COML,VINH - COMH -0.3~17 V
Symbol Parameter Conditions Rating Units
VCE Collector to Emitter Voltage Between CL to EL, Between CH to EH
VGH-EH=VGL-EL=0V , ICH=ICL=250µA300 V
VRRM Peak Repetitive Reverse Voltage Between CH to AH, Between CL to AL
IAH=IAL=250µA300 V
VIN Input Signal Voltage VINL, VINH -0.3 to
Vcc+0.3 V
ICCollector Current Continuous Between CL to EL, Between CH to EH 180 A
IF(AV) Average Rectified Forward Current Between CH to AH, Between CL to AL 10 A
ICP Pulsed Collector Current Between CL to EL, Between CH to EH (Note1) 450 A
IFP Pulsed Diode Current Between CH to AH, Between CL to AL (Note1) 100 A
Symbol Parameter Conditions Rating Units
Pd
IGBT Dissipation Tc=25°C per IGBT 167 W
Tc=100°C per IGBT 67 W
FRD Dissipation Tc=25°C per diode 34 W
Tc=100°C per diode 14 W
Tj Operating Junction Temperture -20 ~ 150 °C
TCModule Case Operation Temperature -20 ~ 125 °C
TSTG Storage Temperature -40 ~ 125 °C
VISO Isolation Voltage 60Hz, Sinusoidal, AC 1 minute, Connection
Pins to IMS substrate 1500 Vrms
Symbol Parameter Conditions Min. Max. Units
Rth(j-c) Junction to Case Thermal
Resistance Between CH to EH, Between CL to EL per IGBT - 0.75 °C/W
Between CH to AH, Between CL to AL per Diode - 3.70 °C/W
6www.fairchildsemi.com
FVP18030IM3LSG1 Rev. A
FVP18030IM3LSG1 Sustain
Electrical Characteristics (Tc = 25°C, Unless Otherwise Specified)
Notes :
2. tON and tOFF include the propagation delay time of internal drive IC. For the detailed information, please see Figure 4.
Figure 4. Switching Time Definition
Symbol Parameter Conditions Min. Typ. Max. Units
IQCC Quiescent VCC Supply
Current VCC = 15V
VINL, VINH = 0V VCCL-COML,
VCCH-COMH - - 100 µA
IQBS Quiescent VBS Supply
Current VBS = 15V
VINL, VINH= 0V VBL- VSL, VBH- VSH - - 500 µA
UVBSD Supply Circuit Under
Voltage Protection Detection Level 10.1 11.3 12.5 V
UVBSR Reset Level 10.5 11.7 12.9 V
VIN(ON) ON Threshold Voltage Applied between VINL-COML, ,VINH - COMH 3.0 - V
VIN(OFF) OFF Threshold Voltage - - 0.8 V
Symbol Parameter Condition Min. Typ. Max. Units
VCE(SAT) IGBT Collector-Emitter
Saturation Voltage VCC = VBS = 15V
VIN = 5V IC = 40A, TJ = 25°C - - 1.4 V
IC = 180A, TJ = 25°C - 1.9 - V
VFDiode Forward Voltage VIN = 0V IC =10A, TJ = 25°C - - 1.4 V
tdON
Switching Times
VCE=200V, VCC= VBS=15V
Ic = 20A
VIN = 0V ↔ 5V , Inductive Load
Tc = 25°C
(Note2)
- 230 - ns
tr-54-ns
tdOFF - 260 - ns
tF- 108 - ns
ICES Collector-Emitter
Leakage Current VCE = 300V - - 250 µA
IRDiode Anode-Cathode
Leakage Current Between EH to CH
Between EL to CL VAnode-Cathode=300V 250 µA
IC
VCE
VCE
IC
VIN VIN
10% of Ic
td(on) tr
10% of IC
90% of IC
td(off) tf
90% of IC
7www.fairchildsemi.com
FVP18030IM3LSG1 Rev. A
FVP18030IM3LSG1 Sustain
Typical Performance Characteristics
Figure 5. Typical Output Characteristics Figure 6. Typical Output Characteristics
Figure 7. Typical Forward Voltage Drop Figure 8. Typical Forward Voltage Drop
0246
0
50
100
150
200
250
300
12V
TC = 25oC
20V
15V
10V
VGE = 8V
Collector Current, IC [A]
C ollec to r-Emitter Vo ltag e , VCE [V] 0246
0
50
100
150
200
250
300
12V
TC = 125oC
20V
15V
10V
VGE = 8V
Collector Current, IC [A]
Co llec tor-E mitter V o ltag e , V CE [V ]
0.20.40.60.81.01.21.41.61.82.0
0.1
1
10
100
TC = 75oC
TC = 125oC
FORWARD CURRENT, IF [A]
FORW ARD VOLTA GE. VF [V]
TC = 25oC
Between CH to EH
Between CL to AL
0.1 1 10 100 1000
0.01
0.1
1
10
100
Collector Current, Ic [A]
Collecto r-E mitter V o l tag e, V CE [V ]
Single N onr ep etitive
Pulse Tc=25oC
Curves m ust be derated
linearly with increase
in temperature
100µs
50µs
1ms
Ic MAX (Pulsed)
8www.fairchildsemi.com
FVP18030IM3LSG1 Rev. A
FVP18030IM3LSG1 Sustain
Mechanical Characteristics and Ratings
Figure 9. Flatness Measurement Position
Parameter Conditions Limits Units
Min. Typ. Max.
Mounting Torque Mounting Screw: - M3 Recommended 0.62N•m 0.51 0.62 0.72 N•m
Device Flatness Note Figure 5 0 - +100 µm
Weight - 13.4 - g
(+)
(+)
9www.fairchildsemi.com
FVP18030IM3LSG1 Rev. A
FVP18030IM3LSG1 Sustain
Detailed Package Outline Drawings
Figure 10.
10 www.fairchildsemi.com
FVP18030IM3LSG1 Rev. A
FVP18030IM3LSG1 Sustain
tm
Rev. I24
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be
an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT D ESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx®
Across the board. Around the world.™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
CTL™
Current Transfer Logic™
DOME™
E2CMOS™
EcoSPARK®
EnSigna™
FACT Quiet Series™
FACT®
FAST®
FASTr™
FPS™
FRFET®
GlobalOptoisolator™
GTO™
HiSeC™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
MICROCOUPLER™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR®
PACMAN™
POP™
Power220®
Power247®
PowerEdge™
PowerSaver™
PowerTrench®
Programmable Active Droop™
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
ScalarPump™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
The Power Franchise®
™
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyWire™
TruTranslation™
µSerDes™
UHC®
UniFET™
VCX™
Wire™
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary First Production This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete Not In Production This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
tm
